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SZ1SMA5925BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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FQA40N25 FQA40N25 ONSEMI fqa40n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 160A
Mounting: THT
Case: TO3PN
auf Bestellung 38 Stücke:
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15+4.93 EUR
21+3.53 EUR
22+3.35 EUR
Mindestbestellmenge: 15
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MJD350T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CDDEC5F654143&compId=MJD340G.pdf?ci_sign=12472b6532ea9144316d04054ab6c4b191e42f7f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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NZL6V8AXV3T1G ONSEMI nzl5v6axv3t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Kind of package: reel; tape
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NZQA6V8AXV5T1G ONSEMI nzqa5v6axv5-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Kind of package: reel; tape
Peak pulse power dissipation: 20W
Max. forward impulse current: 1.6A
Number of channels: 4
Version: ESD
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FGH50N3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA4DD31AB4C0CE&compId=FGH50N3.PDF?ci_sign=1b08b89d55287b0337fe8ab3f2231b8c18eadf1b Category: THT IGBT transistors
Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 300V
Collector current: 75A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 228nC
Kind of package: tube
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CPH6341-TL-W CPH6341-TL-W ONSEMI cph6341-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 10nC
Pulsed drain current: -20A
auf Bestellung 270 Stücke:
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84+0.86 EUR
99+0.73 EUR
204+0.35 EUR
215+0.33 EUR
Mindestbestellmenge: 84
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SZMM3Z3V0T1G SZMM3Z3V0T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 1500 Stücke:
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179+0.40 EUR
290+0.25 EUR
467+0.15 EUR
566+0.13 EUR
969+0.07 EUR
1025+0.07 EUR
Mindestbestellmenge: 179
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N24RF64DWPT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779660D5&compId=N24RF64-D.pdf?ci_sign=ef42442f3e5bcd8f97473c7ccf8fde5521ee39de Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: SOIC8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
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N24RF64EDTPT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A7797A0D5&compId=N24RF64-D.pdf?ci_sign=cf625b6825d72ff851a42235a9d372140a84706f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: TSSOP8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
Produkt ist nicht verfügbar
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NSVBAT54HT1G ONSEMI bat54ht1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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NCP785AH150T1G NCP785AH150T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Operating temperature: -40...85°C
Tolerance: ±5%
Output voltage: 1.5V
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
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MM3Z4V7T1G MM3Z4V7T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 2741 Stücke:
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556+0.13 EUR
782+0.09 EUR
1142+0.06 EUR
1337+0.05 EUR
2741+0.03 EUR
Mindestbestellmenge: 556
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MM3Z4V7ST1G MM3Z4V7ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 8994 Stücke:
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554+0.13 EUR
758+0.09 EUR
1489+0.05 EUR
1695+0.04 EUR
1846+0.04 EUR
2907+0.03 EUR
3087+0.02 EUR
Mindestbestellmenge: 554
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MM5Z4V7T1G MM5Z4V7T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
auf Bestellung 2080 Stücke:
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455+0.16 EUR
633+0.11 EUR
944+0.08 EUR
1122+0.06 EUR
1902+0.04 EUR
2017+0.04 EUR
Mindestbestellmenge: 455
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FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Power dissipation: 14.5W
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Mounting: SMD
Operating temperature: -40...150°C
Case: SPM5H-023
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ONSEMI ntmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FSA4157AP6X ONSEMI fsa4157-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 1µA
Kind of output: SPDT
Kind of package: reel; tape
Technology: TTL
Mounting: SMD
Operating temperature: -40...85°C
Case: SC70-6
Supply voltage: 2.7...5.5V DC
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NLHV4157NDFT2G NLHV4157NDFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF4460D3&compId=NLHV4157N-D.pdf?ci_sign=1fdf53ec6f267b4ba03b7970744a22f99f32ddd8 Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -12÷-4VDC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: SPDT; switch
Mounting: SMD
Operating temperature: -55...125°C
Case: SC88
Number of inputs: 2
Supply voltage: -12...-4V DC
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FDN327N FDN327N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF875E74E87E28&compId=FDN327N.pdf?ci_sign=647dba67650dcc6217d7c8ab71a22b7dc59b804a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Mounting: SMD
Drain current: 2A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SuperSOT-3
Drain-source voltage: 20V
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
167+0.43 EUR
201+0.36 EUR
304+0.24 EUR
363+0.20 EUR
382+0.19 EUR
Mindestbestellmenge: 122
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FDN5632N-F085 FDN5632N-F085 ONSEMI fdn5632n-f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3
Mounting: SMD
Drain current: 1.7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SuperSOT-3
Drain-source voltage: 60V
auf Bestellung 1268 Stücke:
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67+1.07 EUR
103+0.70 EUR
175+0.41 EUR
185+0.39 EUR
500+0.37 EUR
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MC33071DR2G MC33071DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: 1
Slew rate: 13V/μs
Input offset current: 300nA
Input bias current: 0.7µA
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Input offset voltage: 7mV
auf Bestellung 2354 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.80 EUR
101+0.71 EUR
140+0.51 EUR
148+0.48 EUR
1000+0.47 EUR
Mindestbestellmenge: 90
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FAN7842MX FAN7842MX ONSEMI fan7842-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Operating temperature: -40...125°C
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 200V
Mounting: SMD
Case: SOP8
Supply voltage: 10...20V DC
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FDN340P FDN340P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BDB12564E13440C4&compId=FDN340P.pdf?ci_sign=837bebb062c1067f868956117920b37c4697bddb Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -10A
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
auf Bestellung 4640 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
179+0.40 EUR
234+0.31 EUR
407+0.18 EUR
428+0.17 EUR
3000+0.16 EUR
Mindestbestellmenge: 132
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MMBZ5242BLT1G MMBZ5242BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 1µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
auf Bestellung 423 Stücke:
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423+0.17 EUR
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NC7WZ125L8X-L22185 ONSEMI Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.24 EUR
Mindestbestellmenge: 5000
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TIP30CG TIP30CG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
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77+0.93 EUR
84+0.86 EUR
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FDMS86550 ONSEMI fdms86550-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Mounting: SMD
Case: Power56
Drain-source voltage: 60V
Drain current: 148A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 154nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1021A
Produkt ist nicht verfügbar
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GBPC3508 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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74LVX541MTC 74LVX541MTC ONSEMI 74LVX541-D.pdf Category: Level translators
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; 2÷3.6VDC
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: tube
Case: TSSOP20
Manufacturer series: LVX
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Mounting: SMD
Produkt ist nicht verfügbar
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NB4L16MMNG NB4L16MMNG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D866AEA5820&compId=NB4L16MMNG.pdf?ci_sign=4a85cbbe4b0b7efbdded3bdada92317e2e59b429 Category: Level translators
Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD
Supply voltage: 3.8V DC
Frequency: 5GHz
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Case: QFN16
Kind of integrated circuit: buffer; transceiver; translator
Operating temperature: -40...85°C
Mounting: SMD
Produkt ist nicht verfügbar
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NB3L553DG NB3L553DG ONSEMI nb3l553-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Supply voltage: 6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Case: SO8
Kind of integrated circuit: fanout buffer
Operating temperature: -40...85°C
Mounting: SMD
Produkt ist nicht verfügbar
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NTMFS4D2N10MDT1G ONSEMI ntmfs4d2n10md-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 113A; Idm: 763A; 132W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 113A
Pulsed drain current: 763A
Power dissipation: 132W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SZ1SMA5925BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 10V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Drain-source voltage: 250V
Drain current: 25A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Kind of package: tube
Gate charge: 110nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 160A
Mounting: THT
Case: TO3PN
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
21+3.53 EUR
22+3.35 EUR
Mindestbestellmenge: 15
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MJD350T4G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9CDDEC5F654143&compId=MJD340G.pdf?ci_sign=12472b6532ea9144316d04054ab6c4b191e42f7f
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 15W
Case: DPAK
Current gain: 30...240
Mounting: SMD
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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NZL6V8AXV3T1G nzl5v6axv3t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NZQA6V8AXV5T1G nzqa5v6axv5-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Kind of package: reel; tape
Peak pulse power dissipation: 20W
Max. forward impulse current: 1.6A
Number of channels: 4
Version: ESD
Produkt ist nicht verfügbar
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FGH50N3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA4DD31AB4C0CE&compId=FGH50N3.PDF?ci_sign=1b08b89d55287b0337fe8ab3f2231b8c18eadf1b
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 300V
Collector current: 75A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Produkt ist nicht verfügbar
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CPH6341-TL-W cph6341-d.pdf
CPH6341-TL-W
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 10nC
Pulsed drain current: -20A
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
99+0.73 EUR
204+0.35 EUR
215+0.33 EUR
Mindestbestellmenge: 84
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SZMM3Z3V0T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z3V0T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
290+0.25 EUR
467+0.15 EUR
566+0.13 EUR
969+0.07 EUR
1025+0.07 EUR
Mindestbestellmenge: 179
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N24RF64DWPT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A779660D5&compId=N24RF64-D.pdf?ci_sign=ef42442f3e5bcd8f97473c7ccf8fde5521ee39de
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: SOIC8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
Produkt ist nicht verfügbar
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N24RF64EDTPT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A7797A0D5&compId=N24RF64-D.pdf?ci_sign=cf625b6825d72ff851a42235a9d372140a84706f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C,RF; 8kx8bit/2kx32bit; 1.8÷5.5V
Mounting: SMD
Operating temperature: -40...105°C
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 64kb EEPROM
Case: TSSOP8
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C; RF
Kind of memory: EEPROM
Memory organisation: 8kx8bit/2kx32bit
Access time: 400ns
Produkt ist nicht verfügbar
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NSVBAT54HT1G bat54ht1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCP785AH150T1G ncp785a-d.pdf
NCP785AH150T1G
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; linear
Operating temperature: -40...85°C
Tolerance: ±5%
Output voltage: 1.5V
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
Produkt ist nicht verfügbar
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MM3Z4V7T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z4V7T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 2741 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
782+0.09 EUR
1142+0.06 EUR
1337+0.05 EUR
2741+0.03 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z4V7ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z4V7ST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 8994 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
554+0.13 EUR
758+0.09 EUR
1489+0.05 EUR
1695+0.04 EUR
1846+0.04 EUR
2907+0.03 EUR
3087+0.02 EUR
Mindestbestellmenge: 554
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MM5Z4V7T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc
MM5Z4V7T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
633+0.11 EUR
944+0.08 EUR
1122+0.06 EUR
1902+0.04 EUR
2017+0.04 EUR
Mindestbestellmenge: 455
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FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Power dissipation: 14.5W
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Mounting: SMD
Operating temperature: -40...150°C
Case: SPM5H-023
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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NTMJS1D4N06CLTWG ntmjs1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FSA4157AP6X fsa4157-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; SC70-6; 2.7÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 1µA
Kind of output: SPDT
Kind of package: reel; tape
Technology: TTL
Mounting: SMD
Operating temperature: -40...85°C
Case: SC70-6
Supply voltage: 2.7...5.5V DC
Produkt ist nicht verfügbar
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NLHV4157NDFT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63576AF4460D3&compId=NLHV4157N-D.pdf?ci_sign=1fdf53ec6f267b4ba03b7970744a22f99f32ddd8
NLHV4157NDFT2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -12÷-4VDC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: SPDT; switch
Mounting: SMD
Operating temperature: -55...125°C
Case: SC88
Number of inputs: 2
Supply voltage: -12...-4V DC
Produkt ist nicht verfügbar
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FDN327N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF875E74E87E28&compId=FDN327N.pdf?ci_sign=647dba67650dcc6217d7c8ab71a22b7dc59b804a
FDN327N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Mounting: SMD
Drain current: 2A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 6.3nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SuperSOT-3
Drain-source voltage: 20V
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
167+0.43 EUR
201+0.36 EUR
304+0.24 EUR
363+0.20 EUR
382+0.19 EUR
Mindestbestellmenge: 122
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FDN5632N-F085 fdn5632n-f085-d.pdf
FDN5632N-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 1.1W; SuperSOT-3
Mounting: SMD
Drain current: 1.7A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SuperSOT-3
Drain-source voltage: 60V
auf Bestellung 1268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
103+0.70 EUR
175+0.41 EUR
185+0.39 EUR
500+0.37 EUR
Mindestbestellmenge: 67
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MC33071DR2G mc34071-d.pdf
MC33071DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Case: SO8
Operating temperature: -40...85°C
Mounting: SMT
Kind of package: reel; tape
Number of channels: 1
Slew rate: 13V/μs
Input offset current: 300nA
Input bias current: 0.7µA
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Input offset voltage: 7mV
auf Bestellung 2354 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.80 EUR
101+0.71 EUR
140+0.51 EUR
148+0.48 EUR
1000+0.47 EUR
Mindestbestellmenge: 90
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FAN7842MX fan7842-d.pdf
FAN7842MX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Operating temperature: -40...125°C
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 200V
Mounting: SMD
Case: SOP8
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar
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FDN340P pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BDB12564E13440C4&compId=FDN340P.pdf?ci_sign=837bebb062c1067f868956117920b37c4697bddb
FDN340P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -10A
Mounting: SMD
Case: SuperSOT-3
Drain-source voltage: -20V
Drain current: -2A
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
auf Bestellung 4640 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
179+0.40 EUR
234+0.31 EUR
407+0.18 EUR
428+0.17 EUR
3000+0.16 EUR
Mindestbestellmenge: 132
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MMBZ5242BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5242BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; 1uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 12V
Leakage current: 1µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
423+0.17 EUR
Mindestbestellmenge: 423
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NC7WZ125L8X-L22185
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.24 EUR
Mindestbestellmenge: 5000
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TIP30CG pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9
TIP30CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
84+0.86 EUR
Mindestbestellmenge: 77
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FDMS86550 fdms86550-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Mounting: SMD
Case: Power56
Drain-source voltage: 60V
Drain current: 148A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 154nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1021A
Produkt ist nicht verfügbar
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GBPC3508 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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74LVX541MTC 74LVX541-D.pdf
74LVX541MTC
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; 2÷3.6VDC
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: tube
Case: TSSOP20
Manufacturer series: LVX
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Mounting: SMD
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NB4L16MMNG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D866AEA5820&compId=NB4L16MMNG.pdf?ci_sign=4a85cbbe4b0b7efbdded3bdada92317e2e59b429
NB4L16MMNG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD
Supply voltage: 3.8V DC
Frequency: 5GHz
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Case: QFN16
Kind of integrated circuit: buffer; transceiver; translator
Operating temperature: -40...85°C
Mounting: SMD
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NB3L553DG nb3l553-d.pdf
NB3L553DG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Supply voltage: 6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: tube
Case: SO8
Kind of integrated circuit: fanout buffer
Operating temperature: -40...85°C
Mounting: SMD
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NTMFS4D2N10MDT1G ntmfs4d2n10md-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 113A; Idm: 763A; 132W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 113A
Pulsed drain current: 763A
Power dissipation: 132W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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