| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ULQ2003ADR2G | ONSEMI |
 Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Output voltage: 50V Application: for inductive load Output current: 0.5A Input voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FNB43060T2 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAB-C26 Output current: 30A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 59W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NC7SP126L6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SIP6; TinyLogic Manufacturer series: TinyLogic Operating temperature: -40...85°C Type of integrated circuit: digital Case: SIP6 Family: NC Kind of package: reel; tape Mounting: SMD Supply voltage: 0.9...3.6V DC Number of channels: 1 Number of inputs: 2 Kind of integrated circuit: 3-state; buffer Kind of output: 3-state Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MUR1100EG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns Mounting: THT Type of diode: rectifying Case: DO41 Reverse recovery time: 100ns Semiconductor structure: single diode Load current: 1A Kind of package: bulk Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| SZ1SMA5917BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 4.7V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDB075N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 522A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDB075N15A-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NRVS3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
LL4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD80 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| SS39 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 90V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
auf Bestellung 2808 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| MOC3021TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3021SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3021VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV33202DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape Type of integrated circuit: operational amplifier Case: Micro8 Mounting: SMT Number of channels: dual Operating temperature: -40...105°C Kind of package: reel; tape Input offset current: 100nA Input bias current: 0.25µA Input offset voltage: 11mV Voltage supply range: ± 1.8...12V DC Slew rate: 1V/μs Bandwidth: 2.2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MC79M08BDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -8V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
auf Bestellung 474 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC79M08CDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -8V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MC79M12CDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -12V Output current: 0.5A Case: DPAK Mounting: SMD Operating temperature: 0...125°C Number of channels: 1 Voltage drop: 1.1V Kind of package: reel; tape Tolerance: ±4% Manufacturer series: MC79M00 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC14070BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 150ns Family: HEF4000B |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
MC14070BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 150ns Family: HEF4000B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC14017BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Technology: CMOS Kind of integrated circuit: decade counter Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FQD16N25CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 10.1A Power dissipation: 160W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 53.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FQPF16N25C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.8A Pulsed drain current: 62.4A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 53.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NVTYS010N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33 Mounting: SMD Case: LFPAK33 On-state resistance: 9.8mΩ Gate-source voltage: ±20V Power dissipation: 23W Drain-source voltage: 60V Pulsed drain current: 217A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 13nC Drain current: 51A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGY100T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 433W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 284nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGY120T65SPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Gate charge: 162nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 378A Power dissipation: 441W Collector-emitter voltage: 650V Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AFGY120T65SPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Gate charge: 125nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Power dissipation: 357W Collector-emitter voltage: 650V Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8342R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 5kV Case: SOIC6 Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 29.9V Manufacturer series: FOD8342 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8342TR2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 5kV Case: SOIC6 Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 29.9V Manufacturer series: FOD8342 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8342 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: SOP5 Slew rate: 50kV/μs Max. off-state voltage: 5V Manufacturer series: FOD8342 Turn-on time: 38ns Turn-off time: 24ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD8342TR2V | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Insulation voltage: 5kV Case: SOIC6 Slew rate: 50kV/μs Max. off-state voltage: 5V Output voltage: 29.9V Manufacturer series: FOD8342 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 +1 |
FDMA1023PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Gate charge: 12nC On-state resistance: 0.195Ω Power dissipation: 1.5W Gate-source voltage: ±8V Kind of channel: enhancement Case: MicroFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 1N5927BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1N5919BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 5µA |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| MAGNCV8402ASTT1G | ONSEMI |
Category: Unclassified Description: MAGNCV8402ASTT1G |
auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
 |
ESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9.6A Leakage current: 10nA Version: ESD Peak pulse power dissipation: 240W |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| SZESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ESD5Z12T5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.24kW; 14.1V; 9.6A; unidirectional; SOD523; -55÷150°C Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Application: general purpose Peak pulse power dissipation: 0.24kW Version: ESD Operating temperature: -55...150°C Capacitance: 55pF Leakage current: 10nA Number of channels: 1 Max. forward impulse current: 9.6A |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| MARSZESD5Z12T1G | ONSEMI |
Category: Unclassified Description: MARSZESD5Z12T1G |
auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
| LM201AVDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA Mounting: SMT Operating temperature: -40...105°C Case: SO8 Type of integrated circuit: operational amplifier Kind of package: reel; tape Number of channels: single Input offset current: 10nA Input bias current: 75nA Input offset voltage: 2mV Slew rate: 10V/μs Voltage supply range: ± 5...20V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MMSD301T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Case: SOD123 Capacitance: 1.5pF Load current: 0.2A Power dissipation: 0.225W Max. forward voltage: 0.6V Max. off-state voltage: 30V |
auf Bestellung 1870 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| NVMTS0D4N04CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Gate charge: 163nC On-state resistance: 0.4mΩ Power dissipation: 122W Gate-source voltage: ±20V Drain current: 553.8A Drain-source voltage: 40V Pulsed drain current: 900A Case: DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMTS0D4N04CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W Gate charge: 163nC On-state resistance: 0.4mΩ Power dissipation: 122W Gate-source voltage: ±20V Drain current: 553.8A Drain-source voltage: 40V Pulsed drain current: 900A Case: Power88 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMTS0D4N04CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88 Gate charge: 251nC On-state resistance: 450µΩ Power dissipation: 122W Gate-source voltage: ±20V Drain current: 558A Drain-source voltage: 40V Pulsed drain current: 900A Case: Power88 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMYS2D4N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56 Gate charge: 32nC On-state resistance: 2.3mΩ Power dissipation: 27W Gate-source voltage: ±20V Drain current: 138A Drain-source voltage: 40V Pulsed drain current: 829A Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMYS2D4N04CTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56 Gate charge: 32nC On-state resistance: 2.3mΩ Power dissipation: 27W Gate-source voltage: ±20V Drain current: 138A Drain-source voltage: 40V Pulsed drain current: 829A Case: LFPAK56 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFS004N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8 Gate charge: 18nC On-state resistance: 4.9mΩ Power dissipation: 18W Gate-source voltage: ±20V Drain current: 77A Drain-source voltage: 40V Pulsed drain current: 338A Case: WDFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTYS004N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33 Gate charge: 25nC On-state resistance: 4.3mΩ Power dissipation: 27W Gate-source voltage: ±20V Drain current: 84A Drain-source voltage: 40V Pulsed drain current: 371A Case: LFPAK33 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFWS0D4N04XMT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 509A; Idm: 900A; 197W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 509A Pulsed drain current: 900A Power dissipation: 197W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 420µΩ Mounting: SMD Gate charge: 132nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMTS0D4N04CTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
 |
MJE182G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 12.5W Case: TO225 Current gain: 50...250 Mounting: THT Frequency: 50MHz Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NC7SP14P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C Mounting: SMD Case: SC70-5 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 0.9µA Number of channels: single; 1 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NC7WP14P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C Mounting: SMD Case: SC70-6 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 0.9µA Number of channels: dual; 2 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTTFS5D9N08HTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 535A; 100W; WDFN8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Case: WDFN8 Gate charge: 31nC On-state resistance: 5.9mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 84A Power dissipation: 100W Kind of channel: enhancement Pulsed drain current: 535A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MC14504BDTG | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16 Mounting: SMD Kind of integrated circuit: level shifter Type of integrated circuit: digital Technology: CMOS Case: TSSOP16 Number of channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC14538BDR2G | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Operating temperature: -40...85°C Mounting: SMD Supply voltage: 3...18V DC Kind of integrated circuit: monostable; multivibrator; resettable Type of integrated circuit: digital Case: SO16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSR30CM3T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape Case: SOT723 Load current: 0.2A Max. forward voltage: 0.8V Mounting: SMD Max. off-state voltage: 30V Type of diode: Schottky switching Kind of package: reel; tape Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MJE5852G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Polarisation: bipolar Mounting: THT Type of transistor: PNP Case: TO220AB Power dissipation: 80W Collector current: 8A Current gain: 15 Collector-emitter voltage: 400V Kind of package: tube |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| MOC3083SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3083VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ULQ2003ADR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 50V
Application: for inductive load
Output current: 0.5A
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Output voltage: 50V
Application: for inductive load
Output current: 0.5A
Input voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FNB43060T2 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SP126L6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SIP6; TinyLogic
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Type of integrated circuit: digital
Case: SIP6
Family: NC
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Number of channels: 1
Number of inputs: 2
Kind of integrated circuit: 3-state; buffer
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SIP6; TinyLogic
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Type of integrated circuit: digital
Case: SIP6
Family: NC
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Number of channels: 1
Number of inputs: 2
Kind of integrated circuit: 3-state; buffer
Kind of output: 3-state
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1100EG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Reverse recovery time: 100ns
Semiconductor structure: single diode
Load current: 1A
Kind of package: bulk
Max. off-state voltage: 1kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Reverse recovery time: 100ns
Semiconductor structure: single diode
Load current: 1A
Kind of package: bulk
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMA5917BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB075N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB075N15A-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S3MB |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVS3MB |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LL4148 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 583+ | 0.12 EUR |
| 736+ | 0.097 EUR |
| 820+ | 0.087 EUR |
| 1220+ | 0.059 EUR |
| 1484+ | 0.048 EUR |
| 2416+ | 0.03 EUR |
| 2680+ | 0.027 EUR |
| SS39 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 2808 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 84+ | 0.85 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 128+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.51 EUR |
| MOC3021TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3021SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3021VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV33202DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: Micro8
Mounting: SMT
Number of channels: dual
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: Micro8
Mounting: SMT
Number of channels: dual
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC79M08BDTRKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 155+ | 0.46 EUR |
| 171+ | 0.42 EUR |
| 228+ | 0.31 EUR |
| 241+ | 0.3 EUR |
| MC79M08CDTRKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC79M12CDTRKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.1V
Kind of package: reel; tape
Tolerance: ±4%
Manufacturer series: MC79M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Voltage drop: 1.1V
Kind of package: reel; tape
Tolerance: ±4%
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14070BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 116+ | 0.61 EUR |
| MC14070BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14017BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD16N25CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF16N25C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.8A
Pulsed drain current: 62.4A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS010N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY100T120SWD |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 100A; 433W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 433W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY120T65SPD-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 162nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Power dissipation: 441W
Collector-emitter voltage: 650V
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 162nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Power dissipation: 441W
Collector-emitter voltage: 650V
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGY120T65SPD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 125nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Power dissipation: 357W
Collector-emitter voltage: 650V
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 125nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Power dissipation: 357W
Collector-emitter voltage: 650V
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8342R2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8342TR2 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8342 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP5; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP5
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8342
Turn-on time: 38ns
Turn-off time: 24ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8342TR2V |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOIC6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOIC6
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 29.9V
Manufacturer series: FOD8342
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMA1023PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5927BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5919BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 5µA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| MAGNCV8402ASTT1G |
auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.36 EUR |
| ESD5Z12T1G | |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Leakage current: 10nA
Version: ESD
Peak pulse power dissipation: 240W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Leakage current: 10nA
Version: ESD
Peak pulse power dissipation: 240W
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| SZESD5Z12T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD5Z12T5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.24kW; 14.1V; 9.6A; unidirectional; SOD523; -55÷150°C
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Application: general purpose
Peak pulse power dissipation: 0.24kW
Version: ESD
Operating temperature: -55...150°C
Capacitance: 55pF
Leakage current: 10nA
Number of channels: 1
Max. forward impulse current: 9.6A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.24kW; 14.1V; 9.6A; unidirectional; SOD523; -55÷150°C
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Application: general purpose
Peak pulse power dissipation: 0.24kW
Version: ESD
Operating temperature: -55...150°C
Capacitance: 55pF
Leakage current: 10nA
Number of channels: 1
Max. forward impulse current: 9.6A
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.027 EUR |
| MARSZESD5Z12T1G |
auf Bestellung 93000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.038 EUR |
| LM201AVDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSD301T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Capacitance: 1.5pF
Load current: 0.2A
Power dissipation: 0.225W
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape; 225mW
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Capacitance: 1.5pF
Load current: 0.2A
Power dissipation: 0.225W
Max. forward voltage: 0.6V
Max. off-state voltage: 30V
auf Bestellung 1870 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 472+ | 0.15 EUR |
| 693+ | 0.1 EUR |
| 819+ | 0.087 EUR |
| 1137+ | 0.063 EUR |
| 1185+ | 0.06 EUR |
| 1202+ | 0.059 EUR |
| 1247+ | 0.057 EUR |
| NVMTS0D4N04CLTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: DFNW8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS0D4N04CLTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W
Gate charge: 163nC
On-state resistance: 0.4mΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 553.8A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMTS0D4N04CTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88
Gate charge: 251nC
On-state resistance: 450µΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 558A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 558A; Idm: 900A; 122W; Power88
Gate charge: 251nC
On-state resistance: 450µΩ
Power dissipation: 122W
Gate-source voltage: ±20V
Drain current: 558A
Drain-source voltage: 40V
Pulsed drain current: 900A
Case: Power88
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMYS2D4N04CTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS2D4N04CTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 138A; Idm: 829A; 27W; LFPAK56
Gate charge: 32nC
On-state resistance: 2.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 138A
Drain-source voltage: 40V
Pulsed drain current: 829A
Case: LFPAK56
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS004N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Gate charge: 18nC
On-state resistance: 4.9mΩ
Power dissipation: 18W
Gate-source voltage: ±20V
Drain current: 77A
Drain-source voltage: 40V
Pulsed drain current: 338A
Case: WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Gate charge: 18nC
On-state resistance: 4.9mΩ
Power dissipation: 18W
Gate-source voltage: ±20V
Drain current: 77A
Drain-source voltage: 40V
Pulsed drain current: 338A
Case: WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTYS004N04CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Gate charge: 25nC
On-state resistance: 4.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 84A
Drain-source voltage: 40V
Pulsed drain current: 371A
Case: LFPAK33
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 84A; Idm: 371A; 27W; LFPAK33
Gate charge: 25nC
On-state resistance: 4.3mΩ
Power dissipation: 27W
Gate-source voltage: ±20V
Drain current: 84A
Drain-source voltage: 40V
Pulsed drain current: 371A
Case: LFPAK33
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS0D4N04XMT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 509A; Idm: 900A; 197W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 509A
Pulsed drain current: 900A
Power dissipation: 197W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 509A; Idm: 900A; 197W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 509A
Pulsed drain current: 900A
Power dissipation: 197W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 420µΩ
Mounting: SMD
Gate charge: 132nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTS0D4N04CTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 10.05 EUR |
| MJE182G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SP14P5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7WP14P6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS5D9N08HTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 535A; 100W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Case: WDFN8
Gate charge: 31nC
On-state resistance: 5.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Power dissipation: 100W
Kind of channel: enhancement
Pulsed drain current: 535A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 535A; 100W; WDFN8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Case: WDFN8
Gate charge: 31nC
On-state resistance: 5.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Power dissipation: 100W
Kind of channel: enhancement
Pulsed drain current: 535A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14504BDTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Mounting: SMD
Kind of integrated circuit: level shifter
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP16
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Mounting: SMD
Kind of integrated circuit: level shifter
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP16
Number of channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14538BDR2G |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 3...18V DC
Kind of integrated circuit: monostable; multivibrator; resettable
Type of integrated circuit: digital
Case: SO16
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 3...18V DC
Kind of integrated circuit: monostable; multivibrator; resettable
Type of integrated circuit: digital
Case: SO16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSR30CM3T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Case: SOT723
Load current: 0.2A
Max. forward voltage: 0.8V
Mounting: SMD
Max. off-state voltage: 30V
Type of diode: Schottky switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT723; SMD; 30V; 0.2A; reel,tape
Case: SOT723
Load current: 0.2A
Max. forward voltage: 0.8V
Mounting: SMD
Max. off-state voltage: 30V
Type of diode: Schottky switching
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE5852G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Power dissipation: 80W
Collector current: 8A
Current gain: 15
Collector-emitter voltage: 400V
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Power dissipation: 80W
Collector current: 8A
Current gain: 15
Collector-emitter voltage: 400V
Kind of package: tube
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.83 EUR |
| 24+ | 3.09 EUR |
| 25+ | 2.92 EUR |
| MOC3083SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3083VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH