Technische Details FDMD8260LET60 onsemi / Fairchild
Description: MOSFET 2N-CH 60V 15A 12POWER, Part Status: Active, Supplier Device Package: 12-Power3.3x5, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 15A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 12-PowerWDFN, Packaging: Bulk.
Weitere Produktangebote FDMD8260LET60 nach Preis ab 5.18 EUR bis 5.18 EUR
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| FDMD8260LET60 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET 2N-CH 60V 15A 12POWERPart Status: Active Supplier Device Package: 12-Power3.3x5 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V Current - Continuous Drain (Id) @ 25°C: 15A Drain to Source Voltage (Vdss): 60V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Packaging: Bulk |
auf Bestellung 3036 Stücke: Lieferzeit 10-14 Tag (e) |
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