FDMD8260LET60 onsemi / Fairchild
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details FDMD8260LET60 onsemi / Fairchild
Description: MOSFET 2N-CH 60V 15A 12POWER, Packaging: Bulk, Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 15A, Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 12-Power3.3x5, Part Status: Active.
Weitere Produktangebote FDMD8260LET60 nach Preis ab 5.18 EUR bis 5.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FDMD8260LET60 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET 2N-CH 60V 15A 12POWERPackaging: Bulk Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
auf Bestellung 3036 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMD8260LET60 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 304A Power dissipation: 44W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDMD8260LET60 | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 304A Power dissipation: 44W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |