FDMD8260LET60 onsemi / Fairchild

Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: 12-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 15A, Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 12-Power3.3x5, Part Status: Active.