auf Bestellung 450 Stücke:
Lieferzeit 294-308 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 21.09 EUR |
| 10+ | 18.1 EUR |
| 30+ | 16.41 EUR |
| 90+ | 15.05 EUR |
| 270+ | 14.17 EUR |
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Technische Details NGTB75N65FL2WG onsemi
Description: IGBT TRENCH FS 650V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 110ns/270ns, Switching Energy: 1.5mJ (on), 1mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 310 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 595 W.
Weitere Produktangebote NGTB75N65FL2WG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NGTB75N65FL2WG | Hersteller : ON Semiconductor |
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auf Bestellung 379 Stücke: Lieferzeit 21-28 Tag (e) |
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NGTB75N65FL2WG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB75N65FL2WG | Hersteller : onsemi |
Description: IGBT TRENCH FS 650V 100A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 110ns/270ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 310 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 595 W |
Produkt ist nicht verfügbar |