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NVMFS6H818NLT1G ONSEMI nvmfs6h818nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NLWFT1G ONSEMI nvmfs6h818nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NT1G ONSEMI nvmfs6h818n-d.pdf NVMFS6H818N-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MOC207M MOC207M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE082FD3D3A745&compId=MOC207M.pdf?ci_sign=d4d1a34fc9e53c87814dc20cb8134175f7593bdc description Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 642 Stücke:
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75+0.96 EUR
122+0.59 EUR
149+0.48 EUR
157+0.46 EUR
250+0.44 EUR
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MOC207R2M MOC207R2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAE3FCD636F9E27&compId=MOC207R2M.pdf?ci_sign=3c26afd90934c9e1d538881daabfa4648e92a72f Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
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106+0.68 EUR
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MOC205M MOC205M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
auf Bestellung 1252 Stücke:
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152+0.47 EUR
172+0.42 EUR
236+0.3 EUR
250+0.29 EUR
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MOC8106M MOC8106M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051520C7&compId=MOC8106M.pdf?ci_sign=0060baf7afefb0d4daba64b3e83be0bab8a42573 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
auf Bestellung 463 Stücke:
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197+0.36 EUR
219+0.33 EUR
234+0.31 EUR
247+0.29 EUR
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MOC206R2M MOC206R2M ONSEMI ONSM-S-A0003167371-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
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158+0.45 EUR
202+0.35 EUR
213+0.34 EUR
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MOC8204M MOC8204M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051660C7&compId=MOC8204M.pdf?ci_sign=529dc3e6e4b2537127f1f75f83737672837b523f Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
auf Bestellung 706 Stücke:
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83+0.87 EUR
92+0.78 EUR
100+0.72 EUR
101+0.71 EUR
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MOC211M MOC211M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
auf Bestellung 314 Stücke:
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138+0.52 EUR
152+0.47 EUR
172+0.42 EUR
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MOC217M MOC217M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
auf Bestellung 1461 Stücke:
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139+0.51 EUR
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174+0.41 EUR
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MJD340RLG ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
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SZMMSZ5246BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MMSZ5246ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Produkt ist nicht verfügbar
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SZMMSZ5246ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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FDN359AN FDN359AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE903C94EADA259&compId=FDN359AN.pdf?ci_sign=a80057f0f9f224c8fd968e6e92eb392f70c0472f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
auf Bestellung 455 Stücke:
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107+0.67 EUR
138+0.52 EUR
182+0.39 EUR
298+0.24 EUR
315+0.23 EUR
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FDN359BN ONSEMI fdn359bn-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS2D1N04HLTWG ONSEMI nttfs2d1n04hl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ5247BT1G MMSZ5247BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 5611 Stücke:
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655+0.11 EUR
1021+0.07 EUR
1573+0.045 EUR
1916+0.037 EUR
2451+0.029 EUR
2539+0.028 EUR
2632+0.027 EUR
3000+0.026 EUR
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MMSZ5244BT1G MMSZ5244BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 600 Stücke:
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MMSZ5222BT1G MMSZ5222BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2026 Stücke:
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500+0.14 EUR
685+0.1 EUR
782+0.092 EUR
937+0.076 EUR
1078+0.066 EUR
1707+0.042 EUR
1737+0.041 EUR
1806+0.04 EUR
1880+0.038 EUR
Mindestbestellmenge: 500
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MMSZ5260BT1G MMSZ5260BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 226 Stücke:
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226+0.31 EUR
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MMSZ5229BT1G MMSZ5229BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 4374 Stücke:
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587+0.12 EUR
878+0.082 EUR
1078+0.066 EUR
1507+0.047 EUR
1786+0.04 EUR
2243+0.032 EUR
2404+0.03 EUR
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MMSZ5233BT1G MMSZ5233BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2120 Stücke:
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455+0.16 EUR
758+0.094 EUR
1279+0.056 EUR
1793+0.04 EUR
2120+0.034 EUR
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MMSZ5255BT1G MMSZ5255BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3295 Stücke:
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609+0.12 EUR
794+0.09 EUR
935+0.077 EUR
1812+0.039 EUR
2137+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
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NDP6060 ONSEMI ndp6060-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
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NDP6060L NDP6060L ONSEMI pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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2SK932-24-TB-E 2SK932-24-TB-E ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2950 Stücke:
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76+0.94 EUR
143+0.5 EUR
159+0.45 EUR
199+0.36 EUR
211+0.34 EUR
Mindestbestellmenge: 76
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2SK932-23-TB-E 2SK932-23-TB-E ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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FDMS86183 ONSEMI fdms86183-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NC7ST08P5X-L22057 NC7ST08P5X-L22057 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA49A50010EB840D3&compId=NC7ST08-DTE.PDF?ci_sign=804b41575889a36dac36458ebc20e4234ad76da7 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Mounting: SMD
Operating temperature: -48...85°C
Kind of package: reel; tape
Number of channels: single; 1
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Case: SC88A
Kind of gate: AND
Type of integrated circuit: digital
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680+0.11 EUR
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FSA2380BQX ONSEMI fsa2380-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
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FDMB3800N ONSEMI FDMB3800N-D.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
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ES1A ES1A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
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385+0.19 EUR
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FGY75T120SQDN FGY75T120SQDN ONSEMI fgy75t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
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6+12.44 EUR
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FDP047N08 ONSEMI fdp047n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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BSP50 BSP50 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA820C91918BA469&compId=BSP50.pdf?ci_sign=207a1c75875f070f48edd1c6f3447b167cf5623c description Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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NTB7D3N15MC ONSEMI ntb7d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
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MC33178DR2G MC33178DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C297B7BE4469&compId=MC33178DG.PDF?ci_sign=b020d8e9238dc35a9d15e62d87119eb40d09758d Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 2
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
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228+0.31 EUR
285+0.25 EUR
302+0.24 EUR
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MC33179DR2G MC33179DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C935B535A469&compId=MC33179DG.PDF?ci_sign=3dad0277dcff65bfb0cbd2b58db980cbfa260939 Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 4
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
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107+0.67 EUR
119+0.6 EUR
136+0.53 EUR
176+0.41 EUR
186+0.38 EUR
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NRVUB1660CTT4G ONSEMI murb1660ct-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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NCP1654BD65R2G NCP1654BD65R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 9...20V DC
Topology: boost
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NCP1654BD200R2G NCP1654BD200R2G ONSEMI ncp1654-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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MMSD4448 MMSD4448 ONSEMI mmsd4448-d.pdf FAIRS23667-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
auf Bestellung 3862 Stücke:
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417+0.17 EUR
511+0.14 EUR
589+0.12 EUR
973+0.074 EUR
975+0.073 EUR
1073+0.067 EUR
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NCV4294CSN50T1G ONSEMI ncv4294c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
Produkt ist nicht verfügbar
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FDL100N50F FDL100N50F ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF2A0648539E28&compId=FDL100N50F.pdf?ci_sign=e15a30c5b9381050fdc1b844e6f4baecd1f27c0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Gate-source voltage: ±30V
Drain current: 100A
Power dissipation: 2.5kW
Drain-source voltage: 500V
Gate charge: 238nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: UniFET™
Polarisation: unipolar
Case: TO264
On-state resistance: 55mΩ
auf Bestellung 23 Stücke:
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5+17.79 EUR
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MUN5311DW1T1G MUN5311DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CEB9FFC67B3820&compId=MUN5311DW1.pdf?ci_sign=b0c4ff9aeb7d6fa95723d1ddb3b02cb0a1502fc4 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 948 Stücke:
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556+0.13 EUR
657+0.11 EUR
772+0.093 EUR
946+0.076 EUR
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MUN5314DW1T1G MUN5314DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA933508858971CC&compId=MUN5314DW1T1G-DTE.PDF?ci_sign=c41d848364ce740443b0daab9cbbd3ede6b963ef Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.187W
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
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1327+0.054 EUR
2243+0.032 EUR
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MUN5313DW1T1G MUN5313DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AC7B804D1DE749&compId=MUN5313DW1.PDF?ci_sign=0b8a4a92463068a3954d0aad42f4818c611faefc Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
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250+0.29 EUR
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648+0.11 EUR
733+0.098 EUR
1725+0.041 EUR
1825+0.039 EUR
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SMUN5311DW1T1G SMUN5311DW1T1G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
auf Bestellung 2493 Stücke:
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451+0.16 EUR
613+0.12 EUR
661+0.11 EUR
697+0.1 EUR
820+0.087 EUR
1244+0.057 EUR
1316+0.054 EUR
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SMUN5314DW1T1G SMUN5314DW1T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 370 Stücke:
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239+0.3 EUR
329+0.22 EUR
370+0.2 EUR
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MUN5312DW1T1G MUN5312DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CEC64E52A0D820&compId=MUN5312DW1.pdf?ci_sign=bee6b8bd3f3380284cbea030dda802f25eaea960 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
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MUN5315DW1T1G ONSEMI dtc114tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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MUN5316DW1T1G MUN5316DW1T1G ONSEMI dtc143tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Produkt ist nicht verfügbar
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SMUN5311DW1T2G SMUN5311DW1T2G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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SMUN5311DW1T3G SMUN5311DW1T3G ONSEMI dtc114ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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SMUN5313DW1T1G SMUN5313DW1T1G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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SMUN5313DW1T3G SMUN5313DW1T3G ONSEMI dtc144ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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SMUN5315DW1T1G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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NSVMUN5312DW1T2G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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NVMFS6H818NLT1G nvmfs6h818nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NT1G nvmfs6h818n-d.pdf NVMFS6H818N-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MOC207M description pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE082FD3D3A745&compId=MOC207M.pdf?ci_sign=d4d1a34fc9e53c87814dc20cb8134175f7593bdc
MOC207M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
122+0.59 EUR
149+0.48 EUR
157+0.46 EUR
250+0.44 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
MOC207R2M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAE3FCD636F9E27&compId=MOC207R2M.pdf?ci_sign=3c26afd90934c9e1d538881daabfa4648e92a72f
MOC207R2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
106+0.68 EUR
122+0.59 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
MOC205M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2
MOC205M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
152+0.47 EUR
172+0.42 EUR
236+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
MOC8106M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051520C7&compId=MOC8106M.pdf?ci_sign=0060baf7afefb0d4daba64b3e83be0bab8a42573
MOC8106M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
197+0.36 EUR
219+0.33 EUR
234+0.31 EUR
247+0.29 EUR
Mindestbestellmenge: 105
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MOC206R2M ONSM-S-A0003167371-1.pdf?t.download=true&u=5oefqw
MOC206R2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
auf Bestellung 2368 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
158+0.45 EUR
202+0.35 EUR
213+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 120
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MOC8204M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051660C7&compId=MOC8204M.pdf?ci_sign=529dc3e6e4b2537127f1f75f83737672837b523f
MOC8204M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
83+0.87 EUR
92+0.78 EUR
100+0.72 EUR
101+0.71 EUR
Mindestbestellmenge: 57
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MOC211M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2
MOC211M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
138+0.52 EUR
152+0.47 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
MOC217M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2
MOC217M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
139+0.51 EUR
161+0.45 EUR
174+0.41 EUR
Mindestbestellmenge: 79
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MJD340RLG mjd340-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ5246BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5246ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ5246ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
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FDN359AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE903C94EADA259&compId=FDN359AN.pdf?ci_sign=a80057f0f9f224c8fd968e6e92eb392f70c0472f
FDN359AN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
138+0.52 EUR
182+0.39 EUR
298+0.24 EUR
315+0.23 EUR
Mindestbestellmenge: 107
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FDN359BN fdn359bn-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS2D1N04HLTWG nttfs2d1n04hl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5247BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5247BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 5611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
655+0.11 EUR
1021+0.07 EUR
1573+0.045 EUR
1916+0.037 EUR
2451+0.029 EUR
2539+0.028 EUR
2632+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 655
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MMSZ5244BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5244BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
Mindestbestellmenge: 582
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MMSZ5222BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5222BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
685+0.1 EUR
782+0.092 EUR
937+0.076 EUR
1078+0.066 EUR
1707+0.042 EUR
1737+0.041 EUR
1806+0.04 EUR
1880+0.038 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5260BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5260BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
226+0.31 EUR
Mindestbestellmenge: 226
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MMSZ5229BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5229BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
587+0.12 EUR
878+0.082 EUR
1078+0.066 EUR
1507+0.047 EUR
1786+0.04 EUR
2243+0.032 EUR
2404+0.03 EUR
Mindestbestellmenge: 587
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5233BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5233BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
758+0.094 EUR
1279+0.056 EUR
1793+0.04 EUR
2120+0.034 EUR
Mindestbestellmenge: 455
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MMSZ5255BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5255BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
609+0.12 EUR
794+0.09 EUR
935+0.077 EUR
1812+0.039 EUR
2137+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
Mindestbestellmenge: 609
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NDP6060 ndp6060-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Produkt ist nicht verfügbar
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NDP6060L pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74
NDP6060L
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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2SK932-24-TB-E pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f
2SK932-24-TB-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
143+0.5 EUR
159+0.45 EUR
199+0.36 EUR
211+0.34 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
2SK932-23-TB-E pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f
2SK932-23-TB-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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FDMS86183 fdms86183-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NC7ST08P5X-L22057 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA49A50010EB840D3&compId=NC7ST08-DTE.PDF?ci_sign=804b41575889a36dac36458ebc20e4234ad76da7
NC7ST08P5X-L22057
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Mounting: SMD
Operating temperature: -48...85°C
Kind of package: reel; tape
Number of channels: single; 1
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Case: SC88A
Kind of gate: AND
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.25 EUR
470+0.15 EUR
560+0.13 EUR
680+0.11 EUR
720+0.1 EUR
3000+0.097 EUR
Mindestbestellmenge: 290
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FSA2380BQX fsa2380-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
Produkt ist nicht verfügbar
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FDMB3800N FDMB3800N-D.PDF
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ES1A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9
ES1A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
auf Bestellung 3122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
350+0.2 EUR
385+0.19 EUR
463+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 186
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FGY75T120SQDN fgy75t120sqdn-d.pdf
FGY75T120SQDN
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.49 EUR
6+12.44 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FDP047N08 fdp047n08-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP50 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA820C91918BA469&compId=BSP50.pdf?ci_sign=207a1c75875f070f48edd1c6f3447b167cf5623c
BSP50
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTB7D3N15MC ntb7d3n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33178DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C297B7BE4469&compId=MC33178DG.PDF?ci_sign=b020d8e9238dc35a9d15e62d87119eb40d09758d
MC33178DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 2
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
auf Bestellung 1398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
201+0.36 EUR
228+0.31 EUR
285+0.25 EUR
302+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
MC33179DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C935B535A469&compId=MC33179DG.PDF?ci_sign=3dad0277dcff65bfb0cbd2b58db980cbfa260939
MC33179DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 4
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
auf Bestellung 2625 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
107+0.67 EUR
119+0.6 EUR
136+0.53 EUR
176+0.41 EUR
186+0.38 EUR
Mindestbestellmenge: 90
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NRVUB1660CTT4G murb1660ct-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCP1654BD65R2G ncp1654-d.pdf
NCP1654BD65R2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 9...20V DC
Topology: boost
Produkt ist nicht verfügbar
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NCP1654BD200R2G ncp1654-d.pdf
NCP1654BD200R2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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MMSD4448 mmsd4448-d.pdf FAIRS23667-1.pdf?t.download=true&u=5oefqw
MMSD4448
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.4W
auf Bestellung 3862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
511+0.14 EUR
589+0.12 EUR
973+0.074 EUR
975+0.073 EUR
1073+0.067 EUR
Mindestbestellmenge: 417
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NCV4294CSN50T1G ncv4294c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.03A; TSOP5; SMD
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 30mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDL100N50F pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF2A0648539E28&compId=FDL100N50F.pdf?ci_sign=e15a30c5b9381050fdc1b844e6f4baecd1f27c0b
FDL100N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Mounting: THT
Gate-source voltage: ±30V
Drain current: 100A
Power dissipation: 2.5kW
Drain-source voltage: 500V
Gate charge: 238nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Technology: UniFET™
Polarisation: unipolar
Case: TO264
On-state resistance: 55mΩ
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.32 EUR
5+17.79 EUR
10+17.6 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MUN5311DW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998CEB9FFC67B3820&compId=MUN5311DW1.pdf?ci_sign=b0c4ff9aeb7d6fa95723d1ddb3b02cb0a1502fc4
MUN5311DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
451+0.16 EUR
556+0.13 EUR
657+0.11 EUR
772+0.093 EUR
946+0.076 EUR
Mindestbestellmenge: 334
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MUN5314DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA933508858971CC&compId=MUN5314DW1T1G-DTE.PDF?ci_sign=c41d848364ce740443b0daab9cbbd3ede6b963ef
MUN5314DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.187W
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
625+0.11 EUR
1005+0.071 EUR
1327+0.054 EUR
2243+0.032 EUR
2370+0.03 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MUN5313DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE799AC7B804D1DE749&compId=MUN5313DW1.PDF?ci_sign=0b8a4a92463068a3954d0aad42f4818c611faefc
MUN5313DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
481+0.15 EUR
648+0.11 EUR
733+0.098 EUR
1725+0.041 EUR
1825+0.039 EUR
Mindestbestellmenge: 250
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SMUN5311DW1T1G dtc114ep-d.pdf
SMUN5311DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
auf Bestellung 2493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
451+0.16 EUR
613+0.12 EUR
661+0.11 EUR
697+0.1 EUR
820+0.087 EUR
1244+0.057 EUR
1316+0.054 EUR
Mindestbestellmenge: 295
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SMUN5314DW1T1G dtc114yp-d.pdf
SMUN5314DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
329+0.22 EUR
370+0.2 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
MUN5312DW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED998CEC64E52A0D820&compId=MUN5312DW1.pdf?ci_sign=bee6b8bd3f3380284cbea030dda802f25eaea960
MUN5312DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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MUN5315DW1T1G dtc114tp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
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MUN5316DW1T1G dtc143tp-d.pdf
MUN5316DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Produkt ist nicht verfügbar
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SMUN5311DW1T2G dtc114ep-d.pdf
SMUN5311DW1T2G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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SMUN5311DW1T3G dtc114ep-d.pdf
SMUN5311DW1T3G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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SMUN5313DW1T1G dtc144ep-d.pdf
SMUN5313DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5313DW1T3G dtc144ep-d.pdf
SMUN5313DW1T3G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5315DW1T1G dtc114yp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5312DW1T2G dtc124ep-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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