Technische Details NDP6060L ON Semiconductor
Description: MOSFET N-CH 60V 48A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote NDP6060L nach Preis ab 2.58 EUR bis 7.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NDP6060L | ON Semiconductor |
 Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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NDP6060L | onsemi / Fairchild |
MOSFETs N-Ch LL FET Enhancement Mode |
auf Bestellung 2973 Stücke: Lieferzeit 10-14 Tag (e) |
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NDP6060L | ON Semiconductor |
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3950 Stücke: Lieferzeit 14-21 Tag (e) |
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NDP6060L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 60nC |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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NDP6060L | onsemi |
MOSFETs N-Ch LL FET Enhancement Mode |
auf Bestellung 4438 Stücke: Lieferzeit 10-14 Tag (e) |
|
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NDP6060L | onsemi |
Description: MOSFET N-CH 60V 48A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1259 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NDP6060L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 350+ | 4.11 EUR |
| NDP6060L |
|
Hersteller: onsemi / Fairchild
MOSFETs N-Ch LL FET Enhancement Mode
MOSFETs N-Ch LL FET Enhancement Mode
auf Bestellung 2973 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.65 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.84 EUR |
| NDP6060L |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 4.74 EUR |
| 250+ | 3.9 EUR |
| 500+ | 3.39 EUR |
| 1000+ | 3.01 EUR |
| 2500+ | 2.74 EUR |
| NDP6060L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 60nC
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.91 EUR |
| 29+ | 2.94 EUR |
| NDP6060L |
|
Hersteller: onsemi
MOSFETs N-Ch LL FET Enhancement Mode
MOSFETs N-Ch LL FET Enhancement Mode
auf Bestellung 4438 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.31 EUR |
| 10+ | 3.72 EUR |
| 100+ | 3.37 EUR |
| 500+ | 2.84 EUR |
| NDP6060L |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 48A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 48A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.35 EUR |
| 50+ | 3.74 EUR |
| 100+ | 3.39 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.58 EUR |