| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NTTFS5C453NLTWG | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTFS5C453NLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3.1mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVTFS5C453NLWFTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3.1mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTH4L013N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 254nC Power dissipation: 340W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 505A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTH4L014N120M3P | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 322nC Power dissipation: 343W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 407A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTC114YM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...140 Mounting: SMD Base resistor: 10kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 8000pcs. Kind of transistor: BRT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTC114YET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.2W Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MARMC14093BDR2G | ONSEMI |
Category: Unclassified Description: MARMC14093BDR2G |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCS20072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Case: SO8 Integrated circuit features: rail-to-rail output Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 4mV Slew rate: 2.8V/μs Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Bandwidth: 3MHz Number of channels: 2 |
auf Bestellung 1162 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV20072DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; TSSOP8; 2.7÷36VDC; reel,tape Type of integrated circuit: operational amplifier Mounting: SMT Case: TSSOP8 Number of channels: dual Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV20072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; SO8; 2.7÷36VDC; reel,tape Type of integrated circuit: operational amplifier Mounting: SMT Case: SO8 Number of channels: dual Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS20072DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Micro8; 2.7÷36VDC; reel,tape Type of integrated circuit: operational amplifier Case: Micro8 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Slew rate: 2.4V/μs Voltage supply range: 2.7...36V DC Bandwidth: 3MHz Number of channels: dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS20072DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; TSSOP8; 2.7÷36VDC; reel,tape Type of integrated circuit: operational amplifier Case: TSSOP8 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Slew rate: 2.4V/μs Voltage supply range: 2.7...36V DC Bandwidth: 3MHz Number of channels: dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV20072DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Micro8; 2.7÷36VDC; reel,tape Type of integrated circuit: operational amplifier Mounting: SMT Case: Micro8 Number of channels: dual Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTD14N03RT4G | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 2.5A Pulsed drain current: 28A Power dissipation: 20.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTMD4N03R2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 12A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMD4N03R2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 12A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NDS355AN | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 5nC |
auf Bestellung 1307 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTTFD022N10C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 349A; 26W; WQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 24A Pulsed drain current: 349A Power dissipation: 26W Case: WQFN12 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP5663DSADJR4G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7.7V; 3A; SMD Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Case: D2PAK-5 Type of integrated circuit: voltage regulator Mounting: SMD Manufacturer series: NCP5663 Operating temperature: -40...85°C Output current: 3A Output voltage: 0.9...7.7V Number of channels: 1 Voltage drop: 1.25V Tolerance: ±2% Input voltage: 2...9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74ACT573DWG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Family: ACT Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74ACT573DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: ACT Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8184DR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8 Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry Kind of package: reel; tape Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Output voltage: -3...45V Output current: 70mA Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8184DTRKG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry Kind of package: reel; tape Case: DPAK4 Mounting: SMD Type of integrated circuit: voltage regulator Output voltage: -3...45V Output current: 70mA Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8184PDR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8 Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry Kind of package: reel; tape Case: SO8 Mounting: SMD Type of integrated circuit: voltage regulator Output voltage: -3...45V Output current: 70mA Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDS8876 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 91A; 2.5W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 36nC On-state resistance: 14.1mΩ Power dissipation: 2.5W Drain current: 12.5A Gate-source voltage: ±20V Drain-source voltage: 30V Pulsed drain current: 91A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCV887601D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: PMIC Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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RURG3060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2 Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO247-2 Kind of package: tube Load current: 30A Application: automotive industry Max. off-state voltage: 0.6kV |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| RHRG3060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Case: TO247-2 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FODM217CR2V | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCD83591MNTXG | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; motor controller; QFN28; 5÷60VDC Type of integrated circuit: driver Case: QFN28 Mounting: SMD Operating temperature: -40...150°C Supply voltage: 5...60V DC Kind of integrated circuit: motor controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP81141MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; QFN28; buck; 4÷6.5VDC Type of integrated circuit: PMIC Case: QFN28 Mounting: SMD Operating temperature: -40...100°C Operating voltage: 4...6.5V DC Output current: 850µA Number of channels: 1 Frequency: 250...1200kHz Topology: buck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 69A Power dissipation: 59W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 0.16Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13.7A Pulsed drain current: 78A Power dissipation: 68W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.365Ω Mounting: SMD Gate charge: 33.8nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 13.7A Pulsed drain current: 78A Power dissipation: 68W Case: D2PAK-7 Gate-source voltage: -5...15V On-state resistance: 0.365Ω Mounting: SMD Gate charge: 33.8nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 69A Power dissipation: 59W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 337mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12.3A Pulsed drain current: 69A Power dissipation: 55.5W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 224mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12.3A Pulsed drain current: 69A Power dissipation: 55.5W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 377mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Gate charge: 99nC Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Collector-emitter voltage: 650V |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV952DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3.5MHz; TSSOP8; 2.7÷26VDC; reel,tape Type of integrated circuit: operational amplifier Case: TSSOP8 Number of channels: dual Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 30nA Input bias current: 0.1µA Input offset voltage: 6mV Slew rate: 1V/μs Voltage supply range: 2.7...26V DC Bandwidth: 3.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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HUF75639P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| VALSZBZX84C5V1LT1G | ONSEMI |
Category: Unclassified Description: VALSZBZX84C5V1LT1G |
auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HCT138M | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Technology: TTL Manufacturer series: HCT Kind of package: tube |
Produkt ist nicht verfügbar |
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MC74HCT138ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Mounting: SMD Case: SOIC16 Family: HCT Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 6 Technology: CMOS; TTL Manufacturer series: HCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74HCT138ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Mounting: SMD Case: TSSOP16 Family: HCT Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 2...6V DC Number of inputs: 6 Technology: CMOS; TTL Manufacturer series: HCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MM74HCT138MX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Mounting: SMD Case: SO16 Operating temperature: -40...85°C Quiescent current: 160µA Supply voltage: 4.5...5.5V DC Technology: CMOS Manufacturer series: HCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NSM6056MT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6 Mounting: SMD Type of transistor: NPN + diode Kind of package: reel; tape Case: SC74-6 Power dissipation: 0.38W Collector current: 0.6A Collector-emitter voltage: 40V Current gain: 300...100 Frequency: 250MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDD2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Technology: PowerTrench® Polarisation: unipolar Gate charge: 3.4nC On-state resistance: 146mΩ Drain current: 4A Gate-source voltage: ±20V Power dissipation: 135W Drain-source voltage: 150V Kind of channel: enhancement Type of transistor: N-MOSFET |
auf Bestellung 2292 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1606ADR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BSHNTR4502PT1G | ONSEMI |
Category: Unclassified Description: BSHNTR4502PT1G |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3051SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Output voltage: 600V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Output voltage: 600V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Conform to the norm: VDE Output voltage: 600V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Conform to the norm: VDE Output voltage: 600V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3051VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Conform to the norm: VDE Output voltage: 600V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3081TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3081M Conform to the norm: VDE Output voltage: 800V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3081SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3081M Output voltage: 800V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3081SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3081M Output voltage: 800V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3081SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3081M Conform to the norm: VDE Output voltage: 800V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOC3081SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3081M Conform to the norm: VDE Output voltage: 800V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS5C453NLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS5C453NLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS5C453NLWFTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L013N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L014N120M3P |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114YM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC114YET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MARMC14093BDR2G |
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.19 EUR |
| NCS20072DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: SO8
Integrated circuit features: rail-to-rail output
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4mV
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Bandwidth: 3MHz
Number of channels: 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: SO8
Integrated circuit features: rail-to-rail output
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4mV
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Bandwidth: 3MHz
Number of channels: 2
auf Bestellung 1162 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 93+ | 0.78 EUR |
| 112+ | 0.64 EUR |
| 148+ | 0.48 EUR |
| 157+ | 0.46 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.44 EUR |
| NCV20072DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSSOP8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSSOP8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV20072DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; SO8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; SO8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20072DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: Micro8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Slew rate: 2.4V/μs
Voltage supply range: 2.7...36V DC
Bandwidth: 3MHz
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: Micro8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Slew rate: 2.4V/μs
Voltage supply range: 2.7...36V DC
Bandwidth: 3MHz
Number of channels: dual
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20072DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: TSSOP8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Slew rate: 2.4V/μs
Voltage supply range: 2.7...36V DC
Bandwidth: 3MHz
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; TSSOP8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: TSSOP8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Slew rate: 2.4V/μs
Voltage supply range: 2.7...36V DC
Bandwidth: 3MHz
Number of channels: dual
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV20072DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: Micro8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 2.7÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: Micro8
Number of channels: dual
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD14N03RT4G | |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMD4N03R2G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMD4N03R2G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; Idm: 12A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDS355AN |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
auf Bestellung 1307 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 117+ | 0.61 EUR |
| 129+ | 0.56 EUR |
| 169+ | 0.42 EUR |
| 261+ | 0.27 EUR |
| 277+ | 0.26 EUR |
| NTTFD022N10C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 349A; 26W; WQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 349A
Power dissipation: 26W
Case: WQFN12
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 349A; 26W; WQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 349A
Power dissipation: 26W
Case: WQFN12
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP5663DSADJR4G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7.7V; 3A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: D2PAK-5
Type of integrated circuit: voltage regulator
Mounting: SMD
Manufacturer series: NCP5663
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.9...7.7V
Number of channels: 1
Voltage drop: 1.25V
Tolerance: ±2%
Input voltage: 2...9V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.9÷7.7V; 3A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Case: D2PAK-5
Type of integrated circuit: voltage regulator
Mounting: SMD
Manufacturer series: NCP5663
Operating temperature: -40...85°C
Output current: 3A
Output voltage: 0.9...7.7V
Number of channels: 1
Voltage drop: 1.25V
Tolerance: ±2%
Input voltage: 2...9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT573DWG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: ACT
Manufacturer series: ACT
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT573DWR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8184DR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8184DTRKG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: DPAK4
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SMD
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: DPAK4
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8184PDR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; -3÷45V; 0.07A; SO8
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Type of integrated circuit: voltage regulator
Output voltage: -3...45V
Output current: 70mA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS8876 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 91A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 14.1mΩ
Power dissipation: 2.5W
Drain current: 12.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 91A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 91A; 2.5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 14.1mΩ
Power dissipation: 2.5W
Drain current: 12.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Pulsed drain current: 91A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV887601D1R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: PMIC
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: PMIC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RURG3060-F085 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
Load current: 30A
Application: automotive industry
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-2
Kind of package: tube
Load current: 30A
Application: automotive industry
Max. off-state voltage: 0.6kV
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| RHRG3060-F085 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM217CR2V |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| NCD83591MNTXG |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; motor controller; QFN28; 5÷60VDC
Type of integrated circuit: driver
Case: QFN28
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 5...60V DC
Kind of integrated circuit: motor controller
Category: Motor and PWM drivers
Description: IC: driver; motor controller; QFN28; 5÷60VDC
Type of integrated circuit: driver
Case: QFN28
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 5...60V DC
Kind of integrated circuit: motor controller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP81141MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN28; buck; 4÷6.5VDC
Type of integrated circuit: PMIC
Case: QFN28
Mounting: SMD
Operating temperature: -40...100°C
Operating voltage: 4...6.5V DC
Output current: 850µA
Number of channels: 1
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN28; buck; 4÷6.5VDC
Type of integrated circuit: PMIC
Case: QFN28
Mounting: SMD
Operating temperature: -40...100°C
Operating voltage: 4...6.5V DC
Output current: 850µA
Number of channels: 1
Frequency: 250...1200kHz
Topology: buck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 69A
Power dissipation: 59W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 69A
Power dissipation: 59W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG160N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13.7A
Pulsed drain current: 78A
Power dissipation: 68W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.365Ω
Mounting: SMD
Gate charge: 33.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13.7A
Pulsed drain current: 78A
Power dissipation: 68W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.365Ω
Mounting: SMD
Gate charge: 33.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG160N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13.7A
Pulsed drain current: 78A
Power dissipation: 68W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 0.365Ω
Mounting: SMD
Gate charge: 33.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 13.7A
Pulsed drain current: 78A
Power dissipation: 68W
Case: D2PAK-7
Gate-source voltage: -5...15V
On-state resistance: 0.365Ω
Mounting: SMD
Gate charge: 33.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 69A
Power dissipation: 59W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 337mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 69A
Power dissipation: 59W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 337mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12.3A
Pulsed drain current: 69A
Power dissipation: 55.5W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 224mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12.3A
Pulsed drain current: 69A
Power dissipation: 55.5W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 224mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVH4L160N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12.3A
Pulsed drain current: 69A
Power dissipation: 55.5W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 377mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12.3A
Pulsed drain current: 69A
Power dissipation: 55.5W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 377mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH50T65SQD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Collector-emitter voltage: 650V
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.22 EUR |
| 16+ | 4.7 EUR |
| 20+ | 3.6 EUR |
| 22+ | 3.4 EUR |
| NCV952DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3.5MHz; TSSOP8; 2.7÷26VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: TSSOP8
Number of channels: dual
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 30nA
Input bias current: 0.1µA
Input offset voltage: 6mV
Slew rate: 1V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 3.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3.5MHz; TSSOP8; 2.7÷26VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: TSSOP8
Number of channels: dual
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 30nA
Input bias current: 0.1µA
Input offset voltage: 6mV
Slew rate: 1V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 3.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75639P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.47 EUR |
| 35+ | 2.04 EUR |
| 37+ | 1.96 EUR |
| VALSZBZX84C5V1LT1G |
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.023 EUR |
| MM74HCT138M |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Manufacturer series: HCT
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Technology: TTL
Manufacturer series: HCT
Kind of package: tube
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| MC74HCT138ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Technology: CMOS; TTL
Manufacturer series: HCT
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: SOIC16
Family: HCT
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Technology: CMOS; TTL
Manufacturer series: HCT
Kind of package: reel; tape
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| MC74HCT138ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Technology: CMOS; TTL
Manufacturer series: HCT
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Number of inputs: 6
Technology: CMOS; TTL
Manufacturer series: HCT
Kind of package: reel; tape
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| MM74HCT138MX |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Quiescent current: 160µA
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Quiescent current: 160µA
Supply voltage: 4.5...5.5V DC
Technology: CMOS
Manufacturer series: HCT
Kind of package: reel; tape
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| NSM6056MT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6
Mounting: SMD
Type of transistor: NPN + diode
Kind of package: reel; tape
Case: SC74-6
Power dissipation: 0.38W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 300...100
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6
Mounting: SMD
Type of transistor: NPN + diode
Kind of package: reel; tape
Case: SC74-6
Power dissipation: 0.38W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 300...100
Frequency: 250MHz
Polarisation: bipolar
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| FDD2572 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 3.4nC
On-state resistance: 146mΩ
Drain current: 4A
Gate-source voltage: ±20V
Power dissipation: 135W
Drain-source voltage: 150V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 3.4nC
On-state resistance: 146mΩ
Drain current: 4A
Gate-source voltage: ±20V
Power dissipation: 135W
Drain-source voltage: 150V
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 2292 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 35+ | 2.07 EUR |
| 44+ | 1.63 EUR |
| 47+ | 1.54 EUR |
| 100+ | 1.49 EUR |
| NCP1606ADR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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| BSHNTR4502PT1G |
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.07 EUR |
| MOC3051SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
Produkt ist nicht verfügbar
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| MOC3051SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MOC3051SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MOC3051TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
Produkt ist nicht verfügbar
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| MOC3051VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
Produkt ist nicht verfügbar
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| MOC3081TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Conform to the norm: VDE
Output voltage: 800V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Conform to the norm: VDE
Output voltage: 800V
Kind of package: tube
Produkt ist nicht verfügbar
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| MOC3081SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Output voltage: 800V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Output voltage: 800V
Kind of package: tube
Produkt ist nicht verfügbar
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| MOC3081SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Output voltage: 800V
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Output voltage: 800V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| MOC3081SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Conform to the norm: VDE
Output voltage: 800V
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Conform to the norm: VDE
Output voltage: 800V
Kind of package: reel; tape
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| MOC3081SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Conform to the norm: VDE
Output voltage: 800V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3081M
Conform to the norm: VDE
Output voltage: 800V
Kind of package: tube
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