FDPC8012S onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.74 EUR |
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Technische Details FDPC8012S onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, 900mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 13A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V, Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: Powerclip-33, Part Status: Active.
Weitere Produktangebote FDPC8012S nach Preis ab 2.91 EUR bis 5.67 EUR
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FDPC8012S | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 7951 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8012S | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
auf Bestellung 7951 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8012S | Hersteller : onsemi / Fairchild |
MOSFET 25V Asymmetric Dual N-Channel Pwr Trench |
auf Bestellung 9017 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC8012S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A/26A 8-Pin Power Clip 33 EP T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPC8012S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A/26A 8-Pin Power Clip 33 EP T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPC8012S | Hersteller : ONSEMI |
Description: ONSEMI - FDPC8012S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 65700 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPC8012S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A/26A 8-Pin Power Clip 33 EP T/R |
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FDPC8012S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 25V 13A/26A 8-Pin Power Clip 33 EP T/R |
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FDPC8012S | Hersteller : onsemi |
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 900mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A, 26A Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Active |
Produkt ist nicht verfügbar |