| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NVTFS5C466NLWFTAG | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 51A; Idm: 214A; 19W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 51A Pulsed drain current: 214A Power dissipation: 19W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS5C673NLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS6H850NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 68A Pulsed drain current: 300A Power dissipation: 53W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS003N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS005N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 297A; 16W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 297A Power dissipation: 16W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS007N08HLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 71A Pulsed drain current: 347A Power dissipation: 40W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 32.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS008N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 10nC On-state resistance: 8.5mΩ Power dissipation: 12W Drain current: 48A Drain-source voltage: 40V Pulsed drain current: 193A Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS010N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57.8A Pulsed drain current: 232A Power dissipation: 38.9W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS012P03P8ZTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.7A Pulsed drain current: -47A Power dissipation: 2.4W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS016N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Pulsed drain current: 160A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS027N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 119A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS052P04M8LTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -13.2A; Idm: -46A; 11.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -13.2A Pulsed drain current: -46A Power dissipation: 11.5W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS070N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 47A; 12W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 47A Power dissipation: 12W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C02NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28.3A; Idm: 500A; 1.6W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 28.3A Pulsed drain current: 500A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C08NTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 253A; 31W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 55A Pulsed drain current: 253A Power dissipation: 31W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Gate charge: 18.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C13NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 152A Power dissipation: 13W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C13NTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 152A Power dissipation: 13W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C13NWFTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 152A Power dissipation: 13W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C13NWFTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 152A Power dissipation: 13W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.4mΩ Mounting: SMD Gate charge: 15.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C25NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22.1A Pulsed drain current: 90A Power dissipation: 8.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 10.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS4C25NWFTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22.1A Pulsed drain current: 90A Power dissipation: 8.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 10.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS5116PLTWG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -14A Pulsed drain current: -126A Power dissipation: 10W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS5116PLWFTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -14A Pulsed drain current: -126A Power dissipation: 10W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS5116PLWFTWG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -14A Pulsed drain current: -126A Power dissipation: 10W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTMFS5C410NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 920µΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS5C410NAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 920µΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS5C410NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS5C410NWFAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 920µΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS5C410NLWFAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 1A Power dissipation: 0.5W Collector-emitter voltage: 100V Current gain: 140...280 Frequency: 120MHz Case: SOT89 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FDMS86255 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: PQFN8 Gate charge: 45nC On-state resistance: 12.4mΩ Gate-source voltage: ±20V Drain current: 62A Power dissipation: 113W Drain-source voltage: 150V Pulsed drain current: 271A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMS86255ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: Power56 Gate charge: 63nC On-state resistance: 25mΩ Gate-source voltage: ±20V Drain current: 44A Power dissipation: 136W Drain-source voltage: 150V Pulsed drain current: 276A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; reel,tape; DO15; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 0.4kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20K | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 75ns Load current: 2A Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20A | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 2A; reel,tape; DO15; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20B | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 2A; reel,tape; DO15; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20C | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 2A; reel,tape; DO15; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 150V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20D | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO15; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20F | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 2A; reel,tape; DO15; 50ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 50ns Load current: 2A Max. off-state voltage: 300V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| EGP20J | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns Case: DO15 Mounting: THT Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 75ns Load current: 2A Max. off-state voltage: 0.6kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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S3M | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Capacitance: 60pF Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.6W |
auf Bestellung 2620 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMFS010N10GTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 1247A Power dissipation: 75W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 58.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTTFS010N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 250A Power dissipation: 52W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFWS010N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57.8A Pulsed drain current: 232A Power dissipation: 38.9W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SZBZX84C10ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCP4355CDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; 3.5÷40VDC Case: SO8 Mounting: SMD Operating temperature: 0...125°C Number of channels: 1 Operating voltage: 3.5...40V DC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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| NCP435FCT2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4 Case: WLCSP4 Kind of output: P-Channel Kind of package: reel; tape Mounting: SMD Control voltage: 0...3.6V DC On-state resistance: 0.12Ω Number of channels: 1 Supply voltage: 1...3.6V DC Output current: 2A Type of integrated circuit: power switch Active logical level: high Kind of integrated circuit: high-side |
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| NSS40200LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB Mounting: SMD Power dissipation: 0.71W Collector current: 2A Collector-emitter voltage: 40V Current gain: 250 Kind of package: reel; tape Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB |
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| 1N5360BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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| 1N5360BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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| NJL0281DG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5 Type of transistor: NPN + diode Polarisation: bipolar Power dissipation: 180W Case: TO264-5 Mounting: THT Kind of package: tube Collector current: 15A Collector-emitter voltage: 260V Frequency: 30MHz Current gain: 75...150 Pulsed collector current: 25A |
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| NCP11187A065PG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC Case: DIP7 Topology: flyback Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C On-state resistance: 0.87Ω Number of channels: 1 Operating voltage: 7.8...26V DC Kind of integrated circuit: AC/DC switcher; PWM controller Frequency: 62...68kHz |
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| NCP11187A100PG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC Case: DIP7 Topology: flyback Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C On-state resistance: 0.87Ω Number of channels: 1 Operating voltage: 7.8...26V DC Kind of integrated circuit: AC/DC switcher; PWM controller Frequency: 95...105kHz |
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 |
FFSP3065A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 0.6mA Max. forward voltage: 2.4V Max. forward impulse current: 150A Max. off-state voltage: 650V Load current: 30A Power dissipation: 40W Max. load current: 75A |
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| FFSP3065B | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. off-state voltage: 650V Load current: 30A |
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| NSVBCP56-10T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| MC74VHCT138ADTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder Number of channels: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Family: VHCT Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: VHCT Number of inputs: 6 Supply voltage: 3...5.5V DC |
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 |
MGSF1N03LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.1A Power dissipation: 0.69W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6nC |
auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
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| NVTFS5C466NLWFTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 51A; Idm: 214A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 214A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 51A; Idm: 214A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 51A
Pulsed drain current: 214A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NVTFS5C673NLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NVTFS6H850NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 68A
Pulsed drain current: 300A
Power dissipation: 53W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 68A; Idm: 300A; 53W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 68A
Pulsed drain current: 300A
Power dissipation: 53W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NVTFS003N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTFS005N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 297A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 297A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 297A; 16W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 297A
Power dissipation: 16W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTFS007N08HLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 71A; Idm: 347A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 71A
Pulsed drain current: 347A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS008N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 193A; 12W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 10nC
On-state resistance: 8.5mΩ
Power dissipation: 12W
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 193A
Polarisation: unipolar
Kind of channel: enhancement
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Stück im Wert von UAH
| NVTFS010N10MCLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57.8A
Pulsed drain current: 232A
Power dissipation: 38.9W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57.8A
Pulsed drain current: 232A
Power dissipation: 38.9W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTFS012P03P8ZTAG |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.7A
Pulsed drain current: -47A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.7A
Pulsed drain current: -47A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTFS016N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Pulsed drain current: 160A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Pulsed drain current: 160A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS027N10MCLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS052P04M8LTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -13.2A; Idm: -46A; 11.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -13.2A
Pulsed drain current: -46A
Power dissipation: 11.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -13.2A; Idm: -46A; 11.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -13.2A
Pulsed drain current: -46A
Power dissipation: 11.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS070N10MCLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 47A; 12W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 47A
Power dissipation: 12W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 47A; 12W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 47A
Power dissipation: 12W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTFS4C02NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28.3A; Idm: 500A; 1.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28.3A
Pulsed drain current: 500A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28.3A; Idm: 500A; 1.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28.3A
Pulsed drain current: 500A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVTFS4C08NTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 253A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 253A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 18.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 253A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 253A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 18.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS4C13NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS4C13NTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS4C13NWFTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS4C13NWFTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS4C25NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS4C25NWFTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS5116PLTWG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS5116PLWFTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS5116PLWFTWG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C410NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C410NAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C410NLAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C410NWFAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C410NLWFAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 3.46 EUR |
| 2SC3646S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDMS86255 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Gate charge: 45nC
On-state resistance: 12.4mΩ
Gate-source voltage: ±20V
Drain current: 62A
Power dissipation: 113W
Drain-source voltage: 150V
Pulsed drain current: 271A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Gate charge: 45nC
On-state resistance: 12.4mΩ
Gate-source voltage: ±20V
Drain current: 62A
Power dissipation: 113W
Drain-source voltage: 150V
Pulsed drain current: 271A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86255ET150 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power56
Gate charge: 63nC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Drain current: 44A
Power dissipation: 136W
Drain-source voltage: 150V
Pulsed drain current: 276A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power56
Gate charge: 63nC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Drain current: 44A
Power dissipation: 136W
Drain-source voltage: 150V
Pulsed drain current: 276A
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20K |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.8kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 50V
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20B |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 100V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20C |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 150V
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20D |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20F |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 300V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGP20J |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S3M |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 170+ | 0.42 EUR |
| 230+ | 0.31 EUR |
| 332+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| NTMFS010N10GTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTTFS010N10MCLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS010N10MCLTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57.8A
Pulsed drain current: 232A
Power dissipation: 38.9W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57.8A
Pulsed drain current: 232A
Power dissipation: 38.9W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SZBZX84C10LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C10ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| NCP4355CDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 3.5÷40VDC
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Operating voltage: 3.5...40V DC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 3.5÷40VDC
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Operating voltage: 3.5...40V DC
Type of integrated circuit: PMIC
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| NCP435FCT2G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4
Case: WLCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Control voltage: 0...3.6V DC
On-state resistance: 0.12Ω
Number of channels: 1
Supply voltage: 1...3.6V DC
Output current: 2A
Type of integrated circuit: power switch
Active logical level: high
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4
Case: WLCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Control voltage: 0...3.6V DC
On-state resistance: 0.12Ω
Number of channels: 1
Supply voltage: 1...3.6V DC
Output current: 2A
Type of integrated circuit: power switch
Active logical level: high
Kind of integrated circuit: high-side
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| NSS40200LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 40V
Current gain: 250
Kind of package: reel; tape
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 40V
Current gain: 250
Kind of package: reel; tape
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
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| 1N5360BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5360BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| NJL0281DG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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| NCP11187A065PG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
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| NCP11187A100PG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
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| FFSP3065A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.6mA
Max. forward voltage: 2.4V
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.6mA
Max. forward voltage: 2.4V
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
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| FFSP3065B |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 30A
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| NSVBCP56-10T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MC74VHCT138ADTRG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHCT
Number of inputs: 6
Supply voltage: 3...5.5V DC
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHCT
Number of inputs: 6
Supply voltage: 3...5.5V DC
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| MGSF1N03LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 439+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| 758+ | 0.094 EUR |
| 807+ | 0.089 EUR |
| 6N137M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
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