NVTFS070N10MCLTAG onsemi
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.38 EUR |
| 3000+ | 0.35 EUR |
| 4500+ | 0.33 EUR |
| 7500+ | 0.31 EUR |
| 10500+ | 0.3 EUR |
| 15000+ | 0.29 EUR |
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Technische Details NVTFS070N10MCLTAG onsemi
Description: PTNG 100V LL U8FL, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 3V @ 15µA, Power Dissipation (Max): 2.9W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVTFS070N10MCLTAG nach Preis ab 0.45 EUR bis 1.46 EUR
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NVTFS070N10MCLTAG | onsemi |
Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Power Dissipation (Max): 2.9W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 37281 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFS070N10MCLTAG |
|
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 2.9W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 2.9W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 37281 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 20+ | 0.91 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.45 EUR |