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Technische Details FFSP3065A onsemi
Description: DIODE SIL CARB 650V 30A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1705pF @ 1V, 100kHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote FFSP3065A nach Preis ab 6.11 EUR bis 14.75 EUR
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FFSP3065A | onsemi / Fairchild |
 SiC Schottky Diodes 650V SiC SBD 30A |
auf Bestellung 142 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP3065A | onsemi |
Description: DIODE SIL CARB 650V 30A TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1705pF @ 1V, 100kHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 840 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FFSP3065A |
|
Hersteller: onsemi / Fairchild
SiC Schottky Diodes 650V SiC SBD 30A
SiC Schottky Diodes 650V SiC SBD 30A
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 13.69 EUR |
| 10+ | 10.19 EUR |
| 100+ | 8.48 EUR |
| 500+ | 7.55 EUR |
| 1000+ | 7.08 EUR |
| FFSP3065A |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 30A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1705pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1705pF @ 1V, 100kHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.75 EUR |
| 10+ | 10.1 EUR |
| 100+ | 7.47 EUR |
| 800+ | 6.11 EUR |