
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.5 EUR |
10+ | 1.87 EUR |
100+ | 1.29 EUR |
500+ | 1.02 EUR |
1500+ | 0.88 EUR |
3000+ | 0.82 EUR |
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Technische Details NVTFS5C673NLTAG onsemi
Description: MOSFET N-CH 60V 13A/50A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V, Power Dissipation (Max): 3.1W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS5C673NLTAG nach Preis ab 1.2 EUR bis 2.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVTFS5C673NLTAG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 463 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS5C673NLTAG | Hersteller : ON Semiconductor |
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auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5C673NLTAG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVTFS5C673NLTAG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTFS5C673NLTAG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFS5C673NLTAG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |