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NVTFS027N10MCLTAG

NVTFS027N10MCLTAG onsemi

nvtfs027n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.54 EUR
3000+0.5 EUR
4500+0.48 EUR
7500+0.45 EUR
10500+0.44 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVTFS027N10MCLTAG onsemi

Description: PTNG 100V LL U8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Power Dissipation (Max): 3.1W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVTFS027N10MCLTAG nach Preis ab 0.47 EUR bis 1.97 EUR

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NVTFS027N10MCLTAG NVTFS027N10MCLTAG Hersteller : onsemi nvtfs027n10mcl-d.pdf MOSFETs PTNG 100V LL U8FL
auf Bestellung 4047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.66 EUR
10+1.16 EUR
100+0.79 EUR
500+0.65 EUR
1000+0.53 EUR
1500+0.51 EUR
3000+0.47 EUR
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NVTFS027N10MCLTAG NVTFS027N10MCLTAG Hersteller : onsemi nvtfs027n10mcl-d.pdf Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.82 EUR
500+0.63 EUR
Mindestbestellmenge: 9
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NVTFS027N10MCLTAG Hersteller : ON Semiconductor nvtfs027n10mcl-d.pdf Power MOSFET, Single N-Channel
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NVTFS027N10MCLTAG Hersteller : ONSEMI nvtfs027n10mcl-d.pdf NVTFS027N10MCLTAG SMD N channel transistors
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