NVTFS027N10MCLTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 26A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.62 EUR |
| 3000+ | 0.57 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFS027N10MCLTAG onsemi
Description: MOSFET N-CH 100V 26A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Power Dissipation (Max): 3.1W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS027N10MCLTAG nach Preis ab 0.58 EUR bis 2.45 EUR
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NVTFS027N10MCLTAG | ON Semiconductor |
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NVTFS027N10MCLTAG | onsemi |
Description: MOSFET N-CH 100V 26A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 40285 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVTFS027N10MCLTAG |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.38 EUR |
| 3000+ | 1.36 EUR |
| NVTFS027N10MCLTAG |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.38 EUR |
| 3000+ | 1.32 EUR |
| NVTFS027N10MCLTAG |
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Hersteller: onsemi
MOSFETs PTNG 100V LL U8FL
MOSFETs PTNG 100V LL U8FL
auf Bestellung 17841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.4 EUR |
| 10+ | 1.13 EUR |
| 100+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.61 EUR |
| 1500+ | 0.58 EUR |
| NVTFS027N10MCLTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 26A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 26A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 40285 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 14+ | 1.54 EUR |
| 50+ | 1.14 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |