Foto | Bezeichnung | Hersteller | Beschreibung |
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MM3Z24VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 24V |
auf Bestellung 5659 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z27VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 27V |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z13VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 12V |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z22VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 22V |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMM3Z12VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.3W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 12V Application: automotive industry |
auf Bestellung 820 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z33VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode Power dissipation: 0.5W Case: SOD323 Mounting: SMD Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Semiconductor structure: single diode Type of diode: Zener Tolerance: ±2% Zener voltage: 33V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MURA110T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 30ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.875V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 1359 Stücke: Lieferzeit 14-21 Tag (e) |
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MSA1162GT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NSVMSA1162GT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59 Current gain: 120...240 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
QRE1113GR | ONSEMI |
![]() Description: QRE1113GR |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS30201MR6T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 2A Power dissipation: 1.75W Case: TSOP6 Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SNSS30201MR6T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 2A Power dissipation: 1.75W Case: TSOP6 Current gain: 300...900 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LL4148 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD80 Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 9987 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC373DWG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74AC373DTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74AC373DWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTSM245ET1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. off-state voltage: 45V Max. forward impulse current: 50A Application: automotive industry Semiconductor structure: single diode Case: POWERMITE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTSM245ET3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. off-state voltage: 45V Max. forward impulse current: 50A Application: automotive industry Semiconductor structure: single diode Case: POWERMITE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTA123JET1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 80...140 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTA123EET1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75; SOT416 Collector current: 0.1A Power dissipation: 0.3W Current gain: 8...15 Quantity in set/package: 3000pcs. Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DTA123EM3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.6W Current gain: 8...15 Quantity in set/package: 8000pcs. Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Kind of package: reel; tape Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NXH040F120MNF1PG | ONSEMI |
![]() Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NXH040F120MNF1PTG | ONSEMI |
![]() Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NXH040P120MNF1PG | ONSEMI |
![]() Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N5358BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Kind of package: bulk Case: CASE017AA Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 0.5µA Power dissipation: 5W Tolerance: ±5% Zener voltage: 22V Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
1N5358BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA Kind of package: reel; tape Case: CASE017AA Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 0.5µA Power dissipation: 5W Tolerance: ±5% Zener voltage: 22V Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FFSM0665A | ONSEMI |
![]() Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape Case: PQFN8x8 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Load current: 8A Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DF02S | ONSEMI |
![]() Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 2133 Stücke: Lieferzeit 14-21 Tag (e) |
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74ACT00MTCX | ONSEMI |
![]() ![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC74ACT00DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Technology: TTL Mounting: SMD Case: SOIC14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: ACT Manufacturer series: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74ACT00DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
CAT4004AHU2-GT3 | ONSEMI |
![]() Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM Case: uDFN8 Mounting: SMD Integrated circuit features: PWM Operating temperature: -40...85°C Output current: 40mA Supply voltage: 2.4...5.5V DC Number of channels: 4 Interface: 1-wire Kind of integrated circuit: LED driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDB3652 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 61A Power dissipation: 150W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCX158DTG | ONSEMI |
![]() Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; TSSOP16; LCX Case: TSSOP16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Supply voltage: 1.5...3.6V DC Kind of integrated circuit: inverting; multiplexer Family: LCX Technology: CMOS Integrated circuit features: tolerates a voltage of 5V on the inputs Type of integrated circuit: digital Kind of package: tube Operating temperature: -40...85°C |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCX158DR2G | ONSEMI |
![]() Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; SOIC16; LCX Case: SOIC16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Supply voltage: 1.5...3.6V DC Kind of integrated circuit: inverting; multiplexer Family: LCX Technology: CMOS Integrated circuit features: tolerates a voltage of 5V on the inputs Type of integrated circuit: digital Kind of package: reel; tape Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC74LCX158DTR2G | ONSEMI |
![]() Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; TSSOP16; LCX Case: TSSOP16 Mounting: SMD Number of channels: 4 Manufacturer series: LCX Supply voltage: 1.5...3.6V DC Kind of integrated circuit: inverting; multiplexer Family: LCX Technology: CMOS Integrated circuit features: tolerates a voltage of 5V on the inputs Type of integrated circuit: digital Kind of package: reel; tape Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BD678G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: TO225 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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HCPL0600 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Case: SO8 Turn-off time: 50ns Turn-on time: 50ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FPF1003A | ONSEMI |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6 Kind of package: reel; tape Kind of integrated circuit: high-side Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD Case: WLCSP6 On-state resistance: 42mΩ Number of channels: 1 Supply voltage: 1.2...5.5V DC Output current: 2A |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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NTA4153NT1G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD Mounting: SMD Case: SC75 Kind of package: reel; tape Version: ESD Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 0.915A Gate charge: 1.82nC Power dissipation: 0.3W On-state resistance: 0.95Ω Gate-source voltage: ±6V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 3303 Stücke: Lieferzeit 14-21 Tag (e) |
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DAN222T1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Type of diode: rectifying Mounting: SMD Case: SC75 Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Capacitance: 3.5pF Reverse recovery time: 4ns Load current: 0.1A Power dissipation: 0.15W Max. forward impulse current: 2A Max. load current: 0.3A Max. forward voltage: 1.2V Max. off-state voltage: 80V Semiconductor structure: common cathode; double |
auf Bestellung 2964 Stücke: Lieferzeit 14-21 Tag (e) |
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DAP222T1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Type of diode: rectifying Mounting: SMD Case: SC75 Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Capacitance: 3.5pF Reverse recovery time: 4ns Load current: 0.1A Power dissipation: 0.15W Max. forward impulse current: 2A Max. load current: 0.3A Max. forward voltage: 1.2V Max. off-state voltage: 80V Semiconductor structure: common anode; double |
auf Bestellung 5470 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVDAP222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC75; reel,tape Type of diode: switching Mounting: SMD Case: SC75 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal Load current: 0.1A Max. off-state voltage: 80V Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP1380CDR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; 9÷28VDC Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1380DDR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; 9÷28VDC Type of integrated circuit: PMIC Output current: -800...500mA Mounting: SMD Case: SO8 Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDB2710 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 101nC On-state resistance: 36.3mΩ Gate-source voltage: ±30V Drain current: 50A Drain-source voltage: 250V Power dissipation: 260W Kind of package: reel; tape |
auf Bestellung 789 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD13AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 115W Case: DPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2610 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD10AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 1762 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD16AN08A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 50A; 135W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 50A Power dissipation: 135W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2005 Stücke: Lieferzeit 14-21 Tag (e) |
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NTB190N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 50A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCP190N65F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVB190N65S3F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 60A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCH190N65F-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCP190N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCP190N65S3R0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTPF190N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 50A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTHL190N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Pulsed drain current: 50A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMT190N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 45A Power dissipation: 129W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMT190N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 50A Power dissipation: 162W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTPF190N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 45A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
MM3Z24VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 24V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 24V
auf Bestellung 5659 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
535+ | 0.13 EUR |
736+ | 0.097 EUR |
926+ | 0.077 EUR |
1450+ | 0.049 EUR |
2315+ | 0.031 EUR |
3185+ | 0.022 EUR |
3356+ | 0.021 EUR |
MM3Z27VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 27V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 27V
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
758+ | 0.094 EUR |
893+ | 0.08 EUR |
1158+ | 0.062 EUR |
1701+ | 0.042 EUR |
2488+ | 0.029 EUR |
2763+ | 0.026 EUR |
2841+ | 0.025 EUR |
MM3Z13VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
603+ | 0.12 EUR |
676+ | 0.11 EUR |
866+ | 0.083 EUR |
1382+ | 0.052 EUR |
1462+ | 0.049 EUR |
MM3Z22VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 22V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 22V
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
270+ | 0.27 EUR |
SZMM3Z12VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.3W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.3W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
Application: automotive industry
auf Bestellung 820 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
313+ | 0.23 EUR |
365+ | 0.2 EUR |
527+ | 0.14 EUR |
610+ | 0.12 EUR |
642+ | 0.11 EUR |
705+ | 0.1 EUR |
MM3Z33VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 33V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 33V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MURA110T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 1359 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
185+ | 0.39 EUR |
235+ | 0.3 EUR |
358+ | 0.2 EUR |
376+ | 0.19 EUR |
1000+ | 0.18 EUR |
MSA1162GT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVMSA1162GT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 120...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.2W; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59
Current gain: 120...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
QRE1113GR |
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auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.44 EUR |
NSS30201MR6T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SNSS30201MR6T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LL4148 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 9987 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
584+ | 0.12 EUR |
893+ | 0.08 EUR |
1042+ | 0.069 EUR |
1389+ | 0.051 EUR |
1598+ | 0.045 EUR |
2315+ | 0.031 EUR |
4033+ | 0.018 EUR |
4274+ | 0.017 EUR |
MC74AC373DWG |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: AC
Manufacturer series: AC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC373DTR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC373DWR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTSM245ET1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: POWERMITE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: POWERMITE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVTSM245ET3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: POWERMITE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: POWERMITE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA123JET1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 80...140
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTA123EET1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75; SOT416
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 8...15
Quantity in set/package: 3000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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DTA123EM3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 8...15
Quantity in set/package: 8000pcs.
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of package: reel; tape
Polarisation: bipolar
Produkt ist nicht verfügbar
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NXH040F120MNF1PG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH040P120MNF1PG |
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Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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1N5358BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 22V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 22V
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5358BRLG | ![]() |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 22V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 22V
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FFSM0665A |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 8A
Max. off-state voltage: 650V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 8A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DF02S |
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Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2133 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
128+ | 0.56 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
1000+ | 0.32 EUR |
1500+ | 0.31 EUR |
74ACT00MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Produkt ist nicht verfügbar
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MC74ACT00DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74ACT00DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Produkt ist nicht verfügbar
Im Einkaufswagen
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CAT4004AHU2-GT3 |
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Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Case: uDFN8
Mounting: SMD
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Case: uDFN8
Mounting: SMD
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Kind of integrated circuit: LED driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDB3652 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.25 EUR |
28+ | 2.59 EUR |
41+ | 1.74 EUR |
44+ | 1.66 EUR |
MC74LCX158DTG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; TSSOP16; LCX
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: inverting; multiplexer
Family: LCX
Technology: CMOS
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Kind of package: tube
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; TSSOP16; LCX
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: inverting; multiplexer
Family: LCX
Technology: CMOS
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Kind of package: tube
Operating temperature: -40...85°C
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
78+ | 0.92 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
MC74LCX158DR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; SOIC16; LCX
Case: SOIC16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: inverting; multiplexer
Family: LCX
Technology: CMOS
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; SOIC16; LCX
Case: SOIC16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: inverting; multiplexer
Family: LCX
Technology: CMOS
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LCX158DTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; TSSOP16; LCX
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: inverting; multiplexer
Family: LCX
Technology: CMOS
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; CMOS; SMD; TSSOP16; LCX
Case: TSSOP16
Mounting: SMD
Number of channels: 4
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: inverting; multiplexer
Family: LCX
Technology: CMOS
Integrated circuit features: tolerates a voltage of 5V on the inputs
Type of integrated circuit: digital
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD678G |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HCPL0600 |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Turn-off time: 50ns
Turn-on time: 50ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Turn-off time: 50ns
Turn-on time: 50ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
FPF1003A |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6
Kind of package: reel; tape
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Case: WLCSP6
On-state resistance: 42mΩ
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Output current: 2A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6
Kind of package: reel; tape
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Case: WLCSP6
On-state resistance: 42mΩ
Number of channels: 1
Supply voltage: 1.2...5.5V DC
Output current: 2A
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
228+ | 0.31 EUR |
239+ | 0.3 EUR |
250+ | 0.29 EUR |
NTA4153NT1G | ![]() |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Version: ESD
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 0.915A
Gate charge: 1.82nC
Power dissipation: 0.3W
On-state resistance: 0.95Ω
Gate-source voltage: ±6V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Version: ESD
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 0.915A
Gate charge: 1.82nC
Power dissipation: 0.3W
On-state resistance: 0.95Ω
Gate-source voltage: ±6V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3303 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
264+ | 0.27 EUR |
358+ | 0.2 EUR |
432+ | 0.17 EUR |
715+ | 0.1 EUR |
876+ | 0.082 EUR |
1238+ | 0.058 EUR |
DAN222T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
auf Bestellung 2964 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
579+ | 0.12 EUR |
807+ | 0.089 EUR |
1263+ | 0.057 EUR |
1731+ | 0.041 EUR |
2146+ | 0.033 EUR |
2273+ | 0.031 EUR |
DAP222T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Semiconductor structure: common anode; double
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Semiconductor structure: common anode; double
auf Bestellung 5470 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
574+ | 0.12 EUR |
910+ | 0.079 EUR |
1064+ | 0.067 EUR |
1498+ | 0.048 EUR |
1985+ | 0.036 EUR |
2203+ | 0.032 EUR |
2326+ | 0.031 EUR |
3000+ | 0.03 EUR |
NSVDAP222T1G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC75; reel,tape
Type of diode: switching
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Load current: 0.1A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC75; reel,tape
Type of diode: switching
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Load current: 0.1A
Max. off-state voltage: 80V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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NCP1380CDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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NCP1380DDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDB2710 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 101nC
On-state resistance: 36.3mΩ
Gate-source voltage: ±30V
Drain current: 50A
Drain-source voltage: 250V
Power dissipation: 260W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 101nC
On-state resistance: 36.3mΩ
Gate-source voltage: ±30V
Drain current: 50A
Drain-source voltage: 250V
Power dissipation: 260W
Kind of package: reel; tape
auf Bestellung 789 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.56 EUR |
18+ | 4.02 EUR |
19+ | 3.79 EUR |
100+ | 3.68 EUR |
FDD13AN06A0 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
38+ | 1.89 EUR |
48+ | 1.5 EUR |
51+ | 1.42 EUR |
100+ | 1.36 EUR |
FDD10AN06A0 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 1762 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
FDD16AN08A0 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2005 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.42 EUR |
36+ | 2.02 EUR |
40+ | 1.82 EUR |
53+ | 1.37 EUR |
55+ | 1.3 EUR |
250+ | 1.26 EUR |
NTB190N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCP190N65F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVB190N65S3F |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCH190N65F-F155 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCP190N65S3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCP190N65S3R0 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTPF190N65S3HF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTHL190N65S3HF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMT190N65S3H |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMT190N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTPF190N65S3H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH