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NTB190N65S3HF

NTB190N65S3HF onsemi


ntb190n65s3hf-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
auf Bestellung 35200 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+3.26 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTB190N65S3HF onsemi

Description: MOSFET N-CH 650V 20A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 162W (Tc), Vgs(th) (Max) @ Id: 5V @ 430µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V.

Weitere Produktangebote NTB190N65S3HF nach Preis ab 3.78 EUR bis 9.22 EUR

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NTB190N65S3HF NTB190N65S3HF Hersteller : onsemi ntb190n65s3hf-d.pdf Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
auf Bestellung 36026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.12 EUR
10+6.08 EUR
100+4.37 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTB190N65S3HF NTB190N65S3HF Hersteller : onsemi ntb190n65s3hf-d.pdf MOSFETs SUPERFET3 650V FRFET 190M
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.22 EUR
10+6.16 EUR
100+4.33 EUR
500+3.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NTB190N65S3HF Hersteller : ON Semiconductor ntb190n65s3hf-d.pdf
auf Bestellung 639 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH