| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.82 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NRVTSM245ET1G onsemi
Description: DIODE SCHOTTKY 45V 2A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 2A, Supplier Device Package: Powermite, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A, Current - Reverse Leakage @ Vr: 75 µA @ 45 V, Qualification: AEC-Q101.
Weitere Produktangebote NRVTSM245ET1G nach Preis ab 0.33 EUR bis 1.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NRVTSM245ET1G | onsemi |
 Description: DIODE SCHOTTKY 45V 2A POWERMITEPackaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 75 µA @ 45 V Qualification: AEC-Q101 |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| NRVTSM245ET1G | ON Semiconductor |
|
auf Bestellung 2599 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NRVTSM245ET1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 2A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 45 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.26 EUR |
| 28+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| NRVTSM245ET1G |
|
Hersteller: ON Semiconductor
auf Bestellung 2599 Stücke:
Lieferzeit 21-28 Tag (e)