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FCP190N65S3

FCP190N65S3 onsemi

fcp190n65s3-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
auf Bestellung 212950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
164+2.97 EUR
Mindestbestellmenge: 164
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Technische Details FCP190N65S3 onsemi

Description: MOSFET N-CH 650V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V.

Weitere Produktangebote FCP190N65S3 nach Preis ab 4.24 EUR bis 8.35 EUR

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FCP190N65S3 FCP190N65S3 Hersteller : onsemi / Fairchild FCP190N65S3_D-2312016.pdf MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
auf Bestellung 103 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.35 EUR
10+ 7.02 EUR
100+ 5.69 EUR
250+ 5.54 EUR
500+ 5.02 EUR
800+ 4.26 EUR
2400+ 4.24 EUR
Mindestbestellmenge: 7
FCP190N65S3 Hersteller : ON Semiconductor fcp190n65s3-d.pdf
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
FCP190N65S3 FCP190N65S3 Hersteller : ON Semiconductor fcp190n65s3-d.pdf Trans MOSFET N-CH 650V 17A 3-Pin(3+Tab) TO-220 Tube
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FCP190N65S3 FCP190N65S3 Hersteller : onsemi fcp190n65s3-d.pdf Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Produkt ist nicht verfügbar