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SNSS30201MR6T1G

SNSS30201MR6T1G onsemi

NSS30201MR6T1G-D.PDF Hersteller: onsemi
Description: TRANS NPN 30V 2A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SNSS30201MR6T1G onsemi

Description: TRANS NPN 30V 2A 6-TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: 6-TSOP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 535 mW.

Weitere Produktangebote SNSS30201MR6T1G nach Preis ab 0.13 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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SNSS30201MR6T1G Hersteller : onsemi NSS30201MR6T1G-D.PDF Bipolar Transistors - BJT SSP LOW VCES 30V NPN XTR
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.17 EUR
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SNSS30201MR6T1G SNSS30201MR6T1G Hersteller : onsemi NSS30201MR6T1G-D.PDF Description: TRANS NPN 30V 2A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SNSS30201MR6T1G Hersteller : ONSEMI NSS30201MR6T1G-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 2A
Power dissipation: 1.75W
Case: TSOP6
Current gain: 300...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH