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NVTFS4C13NTAG ONSEMI nvtfs4c13n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C13NTWG ONSEMI nvtfs4c13n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C13NWFTAG ONSEMI nvtfs4c13n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C13NWFTWG ONSEMI nvtfs4c13n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C25NTAG ONSEMI NVTFS4C25N-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C25NWFTAG ONSEMI NVTFS4C25N-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5116PLTWG ONSEMI nvtfs5116pl-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5116PLWFTAG ONSEMI nvtfs5116pl-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5116PLWFTWG ONSEMI nvtfs5116pl-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS5C410NT1G ONSEMI ntmfs5c410n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NAFT1G ONSEMI nvmfs5c410n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NLAFT1G ONSEMI nvmfs5c410nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NWFAFT1G ONSEMI nvmfs5c410n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NLWFAFT1G ONSEMI nvmfs5c410nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+3.46 EUR
Mindestbestellmenge: 1500
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2SC3646S-TD-E 2SC3646S-TD-E ONSEMI 2sa1416jp-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
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FDMS86255 ONSEMI fdms86255-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Gate charge: 45nC
On-state resistance: 12.4mΩ
Gate-source voltage: ±20V
Drain current: 62A
Power dissipation: 113W
Drain-source voltage: 150V
Pulsed drain current: 271A
Polarisation: unipolar
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FDMS86255ET150 ONSEMI fdms86255et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power56
Gate charge: 63nC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Drain current: 44A
Power dissipation: 136W
Drain-source voltage: 150V
Pulsed drain current: 276A
Polarisation: unipolar
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EGP20G ONSEMI egp20k-d.pdf FAIRS45036-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 0.4kV
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EGP20K ONSEMI egp20k-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.8kV
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EGP20A ONSEMI FAIRS45036-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 50V
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EGP20B ONSEMI egp20k-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 100V
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EGP20C ONSEMI FAIRS45036-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 150V
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EGP20D ONSEMI egp20k-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
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EGP20F ONSEMI FAIRS45036-1.pdf?t.download=true&u=5oefqw egp20k-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 300V
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EGP20J ONSEMI egp20k-d.pdf FAIRS45036-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.6kV
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S3M S3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Power dissipation: 2.6W
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
170+0.42 EUR
230+0.31 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 120
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NTMFS010N10GTWG ONSEMI ntmfs010n10g-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTTFS010N10MCLTAG ONSEMI nttfs010n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS010N10MCLTAG ONSEMI NVTFS010N10MCL-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57.8A
Pulsed drain current: 232A
Power dissipation: 38.9W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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SZBZX84C10LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C10ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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NCP4355CDR2G NCP4355CDR2G ONSEMI ncp4355-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 3.5÷40VDC
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Operating voltage: 3.5...40V DC
Type of integrated circuit: PMIC
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NCP435FCT2G ONSEMI ncp435-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4
Case: WLCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Control voltage: 0...3.6V DC
On-state resistance: 0.12Ω
Number of channels: 1
Supply voltage: 1...3.6V DC
Output current: 2A
Type of integrated circuit: power switch
Active logical level: high
Kind of integrated circuit: high-side
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NSS40200LT1G ONSEMI nss40200l-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 40V
Current gain: 250
Kind of package: reel; tape
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
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1N5360BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NJL0281DG ONSEMI njl0281d-d.pdf Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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NCP11187A065PG ONSEMI ncp11184-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
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NCP11187A100PG ONSEMI ncp11184-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
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FFSP3065A FFSP3065A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.6mA
Max. forward voltage: 2.4V
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
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FFSP3065B ONSEMI ffsp3065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 30A
Produkt ist nicht verfügbar
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NSVBCP56-10T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC74VHCT138ADTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2B60D3&compId=MC74VHCT138A-D.pdf?ci_sign=3abfdf0569c893dab664b8bd62ba19e1777908c4 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHCT
Number of inputs: 6
Supply voltage: 3...5.5V DC
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MGSF1N03LT1G MGSF1N03LT1G ONSEMI mgsf1n03lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 2920 Stücke:
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439+0.16 EUR
511+0.14 EUR
544+0.13 EUR
758+0.094 EUR
807+0.089 EUR
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6N137M 6N137M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED39EBACC9E606C29E4&compId=6N137.pdf?ci_sign=3f2adbed7e697dc552a45162076791d11ab83709 Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
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4N27M 4N27M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 10%@10mA
CTR@If: 10%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
auf Bestellung 699 Stücke:
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286+0.25 EUR
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74LCX16240MTDX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E626A0672D20D3&compId=74LCX16240-D.pdf?ci_sign=f884a71bfc1539c1008a8a3bca420f939800124a Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,buffer,inverting,line driver; Ch: 16
Manufacturer series: LCX
Kind of package: reel; tape
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of channels: 16
Kind of integrated circuit: 3-state; 16bit; buffer; inverting; line driver
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCX
Technology: CMOS
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MC10H350FNG MC10H350FNG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5DA0DFBE9820&compId=MC10H350FNG.pdf?ci_sign=7d527cd3bbf3860190128116aa22f882b5e2e3e0 Category: Level translators
Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 4
Mounting: SMD
Case: PLCC20
Operating temperature: 0...75°C
Kind of package: tube
Number of inputs: 8
Number of outputs: 4
Manufacturer series: 10H
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FDG6304P FDG6304P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEBE8A9C78DE28&compId=FDG6304P.pdf?ci_sign=ee98354042b808fb4f3e420220baaaae53e983eb Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Drain-source voltage: -25V
Drain current: -0.41A
Gate charge: 1.5nC
Power dissipation: 0.3W
On-state resistance: 1.9Ω
Gate-source voltage: ±8V
Polarisation: unipolar
auf Bestellung 1230 Stücke:
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69+1.04 EUR
110+0.65 EUR
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262+0.27 EUR
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4N35M 4N35M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 350 Stücke:
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185+0.39 EUR
215+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 100
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FDP8D5N10C ONSEMI fdp8d5n10c-d.pdf feb0f5f069362bdf54b8d82f5095f582.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 304A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 304A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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FDB110N15A ONSEMI ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 61nC
On-state resistance: 11mΩ
Power dissipation: 234W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 150V
Pulsed drain current: 369A
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NCP2809BDMR2G ONSEMI ncp2809-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 135mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: Micro10
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: AB
Output power: 135mW
Supply voltage: 2.2...5.5V DC
Impedance: 16Ω
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NCP2811ADTBR2G NCP2811ADTBR2G ONSEMI ncp2811-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Kind of package: reel; tape
Amplifier class: AB
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
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NCP2811BFCCT1G ONSEMI ncp2811-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: flip chip12
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Kind of package: reel; tape
Amplifier class: AB
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
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NSPU5132MUTBG ONSEMI nspu5132-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 13.5V
Breakdown voltage: 15.5V
Produkt ist nicht verfügbar
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FDP4D5N10C ONSEMI fdp4d5n10c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 150W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: tube
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NCP81234MNTXG ONSEMI ncp81234-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 180...1320kHz
Topology: buck
Type of integrated circuit: PMIC
Case: QFN28
Number of channels: 2
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Produkt ist nicht verfügbar
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MM3Z30VST1G MM3Z30VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 30V
auf Bestellung 5790 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
685+0.1 EUR
1450+0.049 EUR
1634+0.044 EUR
1731+0.041 EUR
Mindestbestellmenge: 455
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MM3Z16VST1G MM3Z16VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 16V
auf Bestellung 1871 Stücke:
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1316+0.054 EUR
1737+0.041 EUR
1871+0.039 EUR
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NVTFS4C13NTAG nvtfs4c13n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C13NTWG nvtfs4c13n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C13NWFTAG nvtfs4c13n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C13NWFTWG nvtfs4c13n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 152A; 13W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 152A
Power dissipation: 13W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 15.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C25NTAG NVTFS4C25N-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C25NWFTAG NVTFS4C25N-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22.1A; Idm: 90A; 8.6W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22.1A
Pulsed drain current: 90A
Power dissipation: 8.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 10.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5116PLTWG nvtfs5116pl-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5116PLWFTAG nvtfs5116pl-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS5116PLWFTWG nvtfs5116pl-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Pulsed drain current: -126A
Power dissipation: 10W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS5C410NT1G ntmfs5c410n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NAFT1G nvmfs5c410n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NLAFT1G nvmfs5c410nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS5C410NWFAFT1G nvmfs5c410n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 920µΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C410NLWFAFT1G nvmfs5c410nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+3.46 EUR
Mindestbestellmenge: 1500
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2SC3646S-TD-E 2sa1416jp-d.pdf
2SC3646S-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Produkt ist nicht verfügbar
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FDMS86255 fdms86255-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: PQFN8
Gate charge: 45nC
On-state resistance: 12.4mΩ
Gate-source voltage: ±20V
Drain current: 62A
Power dissipation: 113W
Drain-source voltage: 150V
Pulsed drain current: 271A
Polarisation: unipolar
Produkt ist nicht verfügbar
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FDMS86255ET150 fdms86255et150-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power56
Gate charge: 63nC
On-state resistance: 25mΩ
Gate-source voltage: ±20V
Drain current: 44A
Power dissipation: 136W
Drain-source voltage: 150V
Pulsed drain current: 276A
Polarisation: unipolar
Produkt ist nicht verfügbar
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EGP20G egp20k-d.pdf FAIRS45036-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 0.4kV
Produkt ist nicht verfügbar
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EGP20K egp20k-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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EGP20A FAIRS45036-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 50V
Produkt ist nicht verfügbar
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EGP20B egp20k-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
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EGP20C FAIRS45036-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 150V
Produkt ist nicht verfügbar
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EGP20D egp20k-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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EGP20F FAIRS45036-1.pdf?t.download=true&u=5oefqw egp20k-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2A; reel,tape; DO15; 50ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 50ns
Load current: 2A
Max. off-state voltage: 300V
Produkt ist nicht verfügbar
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EGP20J egp20k-d.pdf FAIRS45036-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns
Case: DO15
Mounting: THT
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 75ns
Load current: 2A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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S3M pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe
S3M
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 60pF
Power dissipation: 2.6W
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
170+0.42 EUR
230+0.31 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS010N10GTWG ntmfs010n10g-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS010N10MCLTAG nttfs010n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFWS010N10MCLTAG NVTFS010N10MCL-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57.8A; Idm: 232A; 38.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57.8A
Pulsed drain current: 232A
Power dissipation: 38.9W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SZBZX84C10LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C10ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP4355CDR2G ncp4355-d.pdf
NCP4355CDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 3.5÷40VDC
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Number of channels: 1
Operating voltage: 3.5...40V DC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP435FCT2G ncp435-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP4
Case: WLCSP4
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Control voltage: 0...3.6V DC
On-state resistance: 0.12Ω
Number of channels: 1
Supply voltage: 1...3.6V DC
Output current: 2A
Type of integrated circuit: power switch
Active logical level: high
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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NSS40200LT1G nss40200l-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 0.71W; SOT23,TO236AB
Mounting: SMD
Power dissipation: 0.71W
Collector current: 2A
Collector-emitter voltage: 40V
Current gain: 250
Kind of package: reel; tape
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Produkt ist nicht verfügbar
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1N5360BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5360BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NJL0281DG njl0281d-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
Produkt ist nicht verfügbar
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NCP11187A065PG ncp11184-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
Produkt ist nicht verfügbar
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NCP11187A100PG ncp11184-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
Produkt ist nicht verfügbar
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FFSP3065A pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380
FFSP3065A
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.6mA
Max. forward voltage: 2.4V
Max. forward impulse current: 150A
Max. off-state voltage: 650V
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Produkt ist nicht verfügbar
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FFSP3065B ffsp3065b-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. off-state voltage: 650V
Load current: 30A
Produkt ist nicht verfügbar
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NSVBCP56-10T3G bcp56t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MC74VHCT138ADTRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2B60D3&compId=MC74VHCT138A-D.pdf?ci_sign=3abfdf0569c893dab664b8bd62ba19e1777908c4
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHCT
Number of inputs: 6
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
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MGSF1N03LT1G mgsf1n03lt1-d.pdf
MGSF1N03LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
439+0.16 EUR
511+0.14 EUR
544+0.13 EUR
758+0.094 EUR
807+0.089 EUR
Mindestbestellmenge: 334
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6N137M pVersion=0046&contRep=ZT&docId=005056AB752F1ED39EBACC9E606C29E4&compId=6N137.pdf?ci_sign=3f2adbed7e697dc552a45162076791d11ab83709
6N137M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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4N27M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a
4N27M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 10%@10mA
CTR@If: 10%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
158+0.45 EUR
214+0.33 EUR
286+0.25 EUR
302+0.24 EUR
Mindestbestellmenge: 100
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74LCX16240MTDX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E626A0672D20D3&compId=74LCX16240-D.pdf?ci_sign=f884a71bfc1539c1008a8a3bca420f939800124a
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,buffer,inverting,line driver; Ch: 16
Manufacturer series: LCX
Kind of package: reel; tape
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Number of channels: 16
Kind of integrated circuit: 3-state; 16bit; buffer; inverting; line driver
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCX
Technology: CMOS
Produkt ist nicht verfügbar
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MC10H350FNG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5DA0DFBE9820&compId=MC10H350FNG.pdf?ci_sign=7d527cd3bbf3860190128116aa22f882b5e2e3e0
MC10H350FNG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; SMD; PLCC20; 0÷75°C; tube; IN: 8; OUT: 4; 10H
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 4
Mounting: SMD
Case: PLCC20
Operating temperature: 0...75°C
Kind of package: tube
Number of inputs: 8
Number of outputs: 4
Manufacturer series: 10H
Produkt ist nicht verfügbar
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FDG6304P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEBE8A9C78DE28&compId=FDG6304P.pdf?ci_sign=ee98354042b808fb4f3e420220baaaae53e983eb
FDG6304P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Drain-source voltage: -25V
Drain current: -0.41A
Gate charge: 1.5nC
Power dissipation: 0.3W
On-state resistance: 1.9Ω
Gate-source voltage: ±8V
Polarisation: unipolar
auf Bestellung 1230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
110+0.65 EUR
248+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 69
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4N35M pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283
4N35M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
134+0.53 EUR
161+0.44 EUR
185+0.39 EUR
215+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 100
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FDP8D5N10C fdp8d5n10c-d.pdf feb0f5f069362bdf54b8d82f5095f582.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 304A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 304A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB110N15A ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 61nC
On-state resistance: 11mΩ
Power dissipation: 234W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 150V
Pulsed drain current: 369A
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NCP2809BDMR2G ncp2809-d.pdf
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 135mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: Micro10
Integrated circuit features: headphone driver; stereo
Kind of package: reel; tape
Amplifier class: AB
Output power: 135mW
Supply voltage: 2.2...5.5V DC
Impedance: 16Ω
Produkt ist nicht verfügbar
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NCP2811ADTBR2G ncp2811-d.pdf
NCP2811ADTBR2G
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Kind of package: reel; tape
Amplifier class: AB
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Produkt ist nicht verfügbar
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NCP2811BFCCT1G ncp2811-d.pdf
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: flip chip12
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Kind of package: reel; tape
Amplifier class: AB
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Produkt ist nicht verfügbar
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NSPU5132MUTBG nspu5132-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 13.5V
Breakdown voltage: 15.5V
Produkt ist nicht verfügbar
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FDP4D5N10C fdp4d5n10c-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 150W
Drain current: 128A
Pulsed drain current: 512A
Kind of package: tube
Produkt ist nicht verfügbar
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NCP81234MNTXG ncp81234-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 180...1320kHz
Topology: buck
Type of integrated circuit: PMIC
Case: QFN28
Number of channels: 2
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Produkt ist nicht verfügbar
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MM3Z30VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z30VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 30V
auf Bestellung 5790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
685+0.1 EUR
1450+0.049 EUR
1634+0.044 EUR
1731+0.041 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z16VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z16VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 16V
auf Bestellung 1871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
1316+0.054 EUR
1737+0.041 EUR
1871+0.039 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
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