| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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HCPL2631SD | ONSEMI |
 Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 2.5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 5kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AC139MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: TSSOP14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 1819 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 4203 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZ1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSV1045V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.39V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 1SMB5945BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1SMA5945BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SZ1SMB5945BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZ1SMA5945BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVJ6904DSB6T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA Type of transistor: N-JFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.7W Case: CPH6 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Semiconductor structure: common source Gate current: 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS2001SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Mounting: SMT Case: SOT23-5 Slew rate: 1.6V/μs Operating temperature: -40...105°C Input offset voltage: 7.5mV Voltage supply range: 0.9...7V DC Kind of package: reel; tape Input bias current: 10pA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS2001SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Mounting: SMT Case: SOT23-5 Slew rate: 1.6V/μs Operating temperature: -40...105°C Input offset voltage: 7.5mV Voltage supply range: 0.9...7V DC Kind of package: reel; tape Input bias current: 10pA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS2001SQ2T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Mounting: SMT Case: SC70-5 Slew rate: 1.6V/μs Operating temperature: -40...105°C Input offset voltage: 7.5mV Voltage supply range: 0.9...7V DC Kind of package: reel; tape Input bias current: 10pA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: SO14 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| LM2595DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MURD620CTT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Semiconductor structure: common cathode; double Case: DPAK Kind of package: reel; tape Reverse recovery time: 35ns |
auf Bestellung 1775 Stücke: Lieferzeit 14-21 Tag (e) |
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| MURD550PFT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 520V; 5A; 95ns; DPAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 520V Load current: 5A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Reverse recovery time: 95ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS5C638NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5 Case: DFN5 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40.7nC On-state resistance: 3mΩ Power dissipation: 50W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS5C638NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5 Case: DFNW5 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40.7nC On-state resistance: 3mΩ Power dissipation: 50W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMYS3D3N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56 Case: LFPAK56 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40.7nC On-state resistance: 3mΩ Power dissipation: 32W Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 133A Pulsed drain current: 811A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDD9409-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MJB44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33067DWR2G | ONSEMI |
Category: Unclassified Description: MC33067DWR2G |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.5A Case: DFN10 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: SOIC8 Interface: SPI Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Clock frequency: 20MHz Memory organisation: 16kx8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: TDFN8 Interface: SPI Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Clock frequency: 20MHz Memory organisation: 16kx8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: SOIC8 Interface: SPI Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Clock frequency: 20MHz Memory organisation: 16kx8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25128YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: TSSOP8 Interface: SPI Access time: 140ns Operating voltage: 1.8...5.5V Memory: 128kb EEPROM Clock frequency: 20MHz Memory organisation: 16kx8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV25128VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: SOIC8 Interface: SPI Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Clock frequency: 10MHz Memory organisation: 16kx8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAV25128YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: TSSOP8 Interface: SPI Access time: 40ns Operating voltage: 2.5...5.5V Memory: 128kb EEPROM Clock frequency: 10MHz Memory organisation: 16kx8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FMB2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMYS016N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV47821PAAJR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷20V; 0.2A; SMD Kind of package: reel; tape Mounting: SMD Case: TSSOP14 Type of integrated circuit: voltage regulator Output current: 0.2A Number of channels: 1 Output voltage: 3.3...20V Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Pulsed drain current: 916A Drain current: 162A Gate charge: 178nC On-state resistance: 2.4mΩ Power dissipation: 246W Gate-source voltage: ±20V Case: D2PAK Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDME1024NZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Gate charge: 4.2nC On-state resistance: 0.16Ω Power dissipation: 1.4W Gate-source voltage: ±8V Case: MicroFET Kind of channel: enhancement Mounting: SMD Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTMFS4C024NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 174A Drain current: 21.7A Gate charge: 14nC On-state resistance: 2.8mΩ Power dissipation: 2.57W Gate-source voltage: ±20V Case: DFN5 Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GRUMMUN2216LT1G | ONSEMI |
Category: Unclassified Description: GRUMMUN2216LT1G |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSI45020JZT1G | ONSEMI |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FES10D | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10A; reel,tape; TO277; 40ns Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Reverse recovery time: 40ns Load current: 10A Max. off-state voltage: 200V Case: TO277 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FES10J | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; reel,tape; TO277 Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Load current: 10A Max. off-state voltage: 0.6kV Case: TO277 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FES10G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10A; reel,tape; TO277; 40ns Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: THT Reverse recovery time: 40ns Load current: 10A Max. off-state voltage: 0.4kV Case: TO277 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FOD2741B | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Type of optocoupler: optocoupler Kind of output: transistor Number of channels: 1 CTR@If: 100-200%@10mA Case: DIP8 Insulation voltage: 5kV Mounting: THT |
auf Bestellung 608 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD2741BS | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBR120VLSFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJE5731G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 350V; 1A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 1A Power dissipation: 40W Case: TO220AB Current gain: 30...150 Mounting: THT Kind of package: tube Frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MJE5731AG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 375V; 1A; 40W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 375V Collector current: 1A Power dissipation: 40W Case: TO220AB Current gain: 30...150 Mounting: THT Kind of package: tube Frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Mounting: THT Manufacturer series: MOC3063M |
auf Bestellung 706 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH600N65L4Q2F2SG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC Application: for UPS; Inverter Topology: NTC thermistor; three-level inverter; single-phase Mechanical mounting: screw Gate-emitter voltage: ±20V Max. off-state voltage: 650V Collector current: 600A Technology: SiC Semiconductor structure: diode/transistor Case: PIM41 Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
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1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 2316 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZ1SMA5930BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZ1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
FDD8647L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Power dissipation: 43W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Power dissipation: 54W Case: DPAK Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2046 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86567-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 227W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FDD86369 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HCPL2631SD |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC139MTCX |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 119+ | 0.6 EUR |
| 140+ | 0.51 EUR |
| 202+ | 0.35 EUR |
| 213+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| 1SMB5932BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4203 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 230+ | 0.31 EUR |
| 266+ | 0.27 EUR |
| 417+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| SZ1SMB5932BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV1045V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5945BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMA5945BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMB5945BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMA5945BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVJ6904DSB6T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS2001SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 1.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7.5mV
Voltage supply range: 0.9...7V DC
Kind of package: reel; tape
Input bias current: 10pA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 1.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7.5mV
Voltage supply range: 0.9...7V DC
Kind of package: reel; tape
Input bias current: 10pA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS2001SN1T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 1.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7.5mV
Voltage supply range: 0.9...7V DC
Kind of package: reel; tape
Input bias current: 10pA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 1.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7.5mV
Voltage supply range: 0.9...7V DC
Kind of package: reel; tape
Input bias current: 10pA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS2001SQ2T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Case: SC70-5
Slew rate: 1.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7.5mV
Voltage supply range: 0.9...7V DC
Kind of package: reel; tape
Input bias current: 10pA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Mounting: SMT
Case: SC70-5
Slew rate: 1.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7.5mV
Voltage supply range: 0.9...7V DC
Kind of package: reel; tape
Input bias current: 10pA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS20034DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO14
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO14
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2595DSADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MURD620CTT4G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 123+ | 0.58 EUR |
| 134+ | 0.53 EUR |
| 186+ | 0.39 EUR |
| 197+ | 0.36 EUR |
| 1000+ | 0.35 EUR |
| MURD550PFT4G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 520V; 5A; 95ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 520V
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 95ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 520V; 5A; 95ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 520V
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 95ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C638NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C638NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS3D3N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56
Case: LFPAK56
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56
Case: LFPAK56
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD9409-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJB44H11G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJB44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJW44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJB44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33067DWR2G |
|
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.81 EUR |
| NCV8535MN500R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.5A
Case: DFN10
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25128VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25128VP2I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TDFN8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TDFN8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25128XI-T2 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25128YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV25128VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV25128YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FMB2222A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS016N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS016N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS016N10MCLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV47821PAAJR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷20V; 0.2A; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3...20V
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷20V; 0.2A; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3...20V
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB024N08BL7 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDME1024NZT |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C024NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GRUMMUN2216LT1G |
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.026 EUR |
| NSI45020JZT1G |
|
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.4 EUR |
| FES10D |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 200V
Case: TO277
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 200V
Case: TO277
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES10J |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; TO277
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. off-state voltage: 0.6kV
Case: TO277
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; TO277
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. off-state voltage: 0.6kV
Case: TO277
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES10G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 0.4kV
Case: TO277
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 0.4kV
Case: TO277
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD2741B |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
auf Bestellung 608 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| 132+ | 0.54 EUR |
| 139+ | 0.51 EUR |
| 500+ | 0.5 EUR |
| FOD2741BS |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1.17 EUR |
| MBR120VLSFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.31 EUR |
| MJE5731G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
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| MJE5731AG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 375V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 375V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 375V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 375V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
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| MOC3063M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC3063M
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC3063M
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 93+ | 0.78 EUR |
| 120+ | 0.6 EUR |
| 126+ | 0.57 EUR |
| 500+ | 0.56 EUR |
| NXH600N65L4Q2F2SG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Application: for UPS; Inverter
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Collector current: 600A
Technology: SiC
Semiconductor structure: diode/transistor
Case: PIM41
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Application: for UPS; Inverter
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Collector current: 600A
Technology: SiC
Semiconductor structure: diode/transistor
Case: PIM41
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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| 1SMB5930BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2316 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 209+ | 0.34 EUR |
| 341+ | 0.21 EUR |
| 428+ | 0.17 EUR |
| 562+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| SZ1SMA5930BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMB5930BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD8647L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.1 EUR |
| FDD86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2046 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.86 EUR |
| 45+ | 1.62 EUR |
| 48+ | 1.5 EUR |
| 60+ | 1.2 EUR |
| 64+ | 1.13 EUR |
| 100+ | 1.1 EUR |
| 500+ | 1.09 EUR |
| FDD86567-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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Stück im Wert von UAH
| FDD86369 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH