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NSBA115TDP6T5G ONSEMI dta115td-d.pdf ONSMS25174-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 100kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBA123TDP6T5G ONSEMI DTA123TD-D.PDF dta123td-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC114EDP6T5G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC114TDP6T5G ONSEMI dtc114td-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC123JDP6T5G ONSEMI dtc123jd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC143ZDP6T5G ONSEMI dtc143zd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC144EDP6T5G ONSEMI dtc144ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC144WDP6T5G ONSEMI dtc144wd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NST847BPDP6T5G ONSEMI nst847bpdp6-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.42W
Case: SOT963
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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NSBC114YPDP6T5G ONSEMI dtc114yp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC115TPDP6T5G ONSEMI dtc115tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC123JPDP6T5G ONSEMI dtc123jp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC123TPDP6T5G ONSEMI dtc123tp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC124EPDP6T5G ONSEMI dtc124ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 22kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC143EPDP6T5G ONSEMI DTC143EP-D.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 15...30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NC7SZ00P5X NC7SZ00P5X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE309C75D36745&compId=NC7SZ00.pdf?ci_sign=cfd0c3d846b5af87949dd9dceb51b2ab0321d3ef Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
834+0.086 EUR
1153+0.062 EUR
1330+0.054 EUR
1786+0.04 EUR
1887+0.038 EUR
Mindestbestellmenge: 500
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ESD5Z2.5T1G ESD5Z2.5T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 6µA
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Peak pulse power dissipation: 120W
Version: ESD
auf Bestellung 1430 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
544+0.13 EUR
782+0.092 EUR
1430+0.05 EUR
Mindestbestellmenge: 455
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ESD5Z6.0T1G ESD5Z6.0T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996 description Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 10nA
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 181W
Version: ESD
auf Bestellung 3280 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
770+0.093 EUR
1147+0.062 EUR
1363+0.052 EUR
1690+0.042 EUR
1961+0.036 EUR
2440+0.029 EUR
2578+0.028 EUR
3000+0.027 EUR
Mindestbestellmenge: 500
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ESD5Z7.0T1G ESD5Z7.0T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 10nA
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.2kW
Version: ESD
auf Bestellung 1483 Stücke:
Lieferzeit 14-21 Tag (e)
584+0.12 EUR
820+0.087 EUR
1000+0.072 EUR
1163+0.061 EUR
1370+0.052 EUR
1483+0.049 EUR
Mindestbestellmenge: 584
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MMBT5088LT1G MMBT5088LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C12D3F357DC0CE&compId=MMBT5088L_MMBT5089L.PDF?ci_sign=a6e8d97f788a8156f13573a4886db6c597d44311 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Type of transistor: NPN
Collector current: 50mA
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 50MHz
Case: SOT23; TO236AB
Polarisation: bipolar
Kind of package: reel; tape
auf Bestellung 2611 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
676+0.11 EUR
1019+0.07 EUR
1341+0.053 EUR
2137+0.033 EUR
2263+0.032 EUR
Mindestbestellmenge: 358
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LC709205FXE-01TBG ONSEMI lc709205f-d.pdf Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Produkt ist nicht verfügbar
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VALSZMMSZ5240BT1G ONSEMI Category: Unclassified
Description: VALSZMMSZ5240BT1G
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.044 EUR
Mindestbestellmenge: 3000
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1N5252B 1N5252B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Kind of package: bulk
auf Bestellung 4959 Stücke:
Lieferzeit 14-21 Tag (e)
533+0.13 EUR
926+0.077 EUR
1202+0.059 EUR
1786+0.04 EUR
2591+0.028 EUR
2874+0.025 EUR
2942+0.024 EUR
3165+0.023 EUR
Mindestbestellmenge: 533
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1N5252BTR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4935G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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1N4935RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92 Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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STZD3155CT1G ONSEMI Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.087 EUR
Mindestbestellmenge: 4000
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FDD1600N10ALZ ONSEMI fdd1600n10alz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 13.6A; 14.9W; DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.78nC
On-state resistance: 0.16Ω
Drain current: 6.8A
Pulsed drain current: 13.6A
Power dissipation: 14.9W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of package: reel; tape
Case: DPAK
Produkt ist nicht verfügbar
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NC7SZ126P5X NC7SZ126P5X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEB0DAF67249E28&compId=NC7SZ126.pdf?ci_sign=86e95585bfcc1284d5655be8904f863fa6b7a1db Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 20µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NC7SZ126P5X-F22057 ONSEMI nc7sz126-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 2µA
Number of outputs: 1
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.099 EUR
Mindestbestellmenge: 3000
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NUF6401MNT1G ONSEMI nuf6401-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NUF6400MNTBG ONSEMI nuf6400mn-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SNUF6401MNT1G ONSEMI nuf6401-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA92 MMBTA92 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDP150N10 ONSEMI fdp150n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 57A
Power dissipation: 110W
Drain-source voltage: 100V
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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FDP150N10A-F102 ONSEMI FDP150N10A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 50A
Power dissipation: 91W
Drain-source voltage: 100V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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NTMTSC1D6N10MCTXG ONSEMI ntmtsc1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 267A; Idm: 900A; 145W; Power88
Kind of channel: enhancement
Mounting: SMD
Case: Power88
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 900A
Drain-source voltage: 100V
Drain current: 267A
Gate-source voltage: ±20V
Gate charge: 106nC
On-state resistance: 1.7mΩ
Power dissipation: 145W
Produkt ist nicht verfügbar
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NCV4263-2CD250R2G ONSEMI ncv4263-2c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SO14; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.2A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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NCP1342AMDCDAD1R2G ONSEMI ncp1342-d.pdf Category: Unclassified
Description: NCP1342AMDCDAD1R2G
auf Bestellung 2500 Stücke:
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2500+0.93 EUR
Mindestbestellmenge: 2500
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TIP50G ONSEMI tip47-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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NCP1342AMAACD1R2G ONSEMI ncp1342-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO9; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO9
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Topology: flyback
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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MC7812BD2TG MC7812BD2TG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE9CC6D414260C7&compId=MC78xx.pdf?ci_sign=5c967ea61e70b06d60938bce0de2bd299bbedecb Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: tube
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Mounting: SMD
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
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MC7812BD2TR4G MC7812BD2TR4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE9CC6D414260C7&compId=MC78xx.pdf?ci_sign=5c967ea61e70b06d60938bce0de2bd299bbedecb Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Mounting: SMD
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
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NCV7812BD2TR4G ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Number of channels: 1
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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FDP75N08A FDP75N08A ONSEMI fdp75n08a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 300A; 137W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 47A
Pulsed drain current: 300A
Power dissipation: 137W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSD3070 ONSEMI mmsd3070-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.2A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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CPH6341-TL-W CPH6341-TL-W ONSEMI cph6341-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Gate charge: 10nC
Version: ESD
auf Bestellung 264 Stücke:
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100+0.72 EUR
114+0.63 EUR
125+0.58 EUR
204+0.35 EUR
215+0.33 EUR
Mindestbestellmenge: 100
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NSR0170HT1G ONSEMI nsr0170-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC33172VDR2G ONSEMI mc33171-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: dual
Produkt ist nicht verfügbar
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MM3Z30VC MM3Z30VC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
auf Bestellung 1990 Stücke:
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264+0.27 EUR
358+0.2 EUR
428+0.17 EUR
667+0.11 EUR
794+0.09 EUR
1021+0.07 EUR
1087+0.066 EUR
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MM3Z6V8ST1G MM3Z6V8ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
528+0.14 EUR
910+0.079 EUR
1382+0.052 EUR
1651+0.043 EUR
2393+0.03 EUR
3049+0.023 EUR
3226+0.022 EUR
3334+0.021 EUR
Mindestbestellmenge: 528
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MBT3906DW1T1G MBT3906DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=E1C051B73AFBB2F1A6F5005056AB5A8F&compId=mbt3906.pdf?ci_sign=26e32666265289c5b995f5de9786af893ee7a106 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 2403 Stücke:
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541+0.13 EUR
758+0.094 EUR
1229+0.058 EUR
1684+0.042 EUR
2403+0.03 EUR
Mindestbestellmenge: 541
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SMBT3906DW1T1G ONSEMI mbt3906dw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MLI2V7002KT1G ONSEMI Category: Unclassified
Description: MLI2V7002KT1G
auf Bestellung 1020000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.04 EUR
Mindestbestellmenge: 3000
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VES2V7002KT1G ONSEMI Category: Unclassified
Description: VES2V7002KT1G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.047 EUR
Mindestbestellmenge: 3000
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FNB41060
+1
 		FNB41060 ONSEMI fnb41060-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 32W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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MURA205T3G ONSEMI mura205t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMSZ5221BT1G MMSZ5221BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1085 Stücke:
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500+0.14 EUR
782+0.092 EUR
1085+0.066 EUR
Mindestbestellmenge: 500
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BZX84C2V4LT1G BZX84C2V4LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50µA
auf Bestellung 5441 Stücke:
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528+0.14 EUR
794+0.09 EUR
1180+0.061 EUR
1421+0.05 EUR
2174+0.033 EUR
2924+0.024 EUR
3087+0.023 EUR
3226+0.022 EUR
Mindestbestellmenge: 528
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MMSZ4681T1G MMSZ4681T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 2µA
auf Bestellung 3960 Stücke:
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770+0.093 EUR
1158+0.062 EUR
1374+0.052 EUR
1873+0.038 EUR
1977+0.036 EUR
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NSBA115TDP6T5G dta115td-d.pdf ONSMS25174-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 100kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBA123TDP6T5G DTA123TD-D.PDF dta123td-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC114EDP6T5G dtc114ed-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC114TDP6T5G dtc114td-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC123JDP6T5G dtc123jd-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC143ZDP6T5G dtc143zd-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC144EDP6T5G dtc144ed-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSBC144WDP6T5G dtc144wd-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NST847BPDP6T5G nst847bpdp6-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.42W
Case: SOT963
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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NSBC114YPDP6T5G dtc114yp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC115TPDP6T5G dtc115tp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC123JPDP6T5G dtc123jp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC123TPDP6T5G dtc123tp-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC124EPDP6T5G dtc124ep-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 22kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
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NSBC143EPDP6T5G DTC143EP-D.PDF
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 15...30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT; complementary pair
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ00P5X pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE309C75D36745&compId=NC7SZ00.pdf?ci_sign=cfd0c3d846b5af87949dd9dceb51b2ab0321d3ef
NC7SZ00P5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
834+0.086 EUR
1153+0.062 EUR
1330+0.054 EUR
1786+0.04 EUR
1887+0.038 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z2.5T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996
ESD5Z2.5T1G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 6µA
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Peak pulse power dissipation: 120W
Version: ESD
auf Bestellung 1430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
544+0.13 EUR
782+0.092 EUR
1430+0.05 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z6.0T1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996
ESD5Z6.0T1G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 10nA
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 181W
Version: ESD
auf Bestellung 3280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
770+0.093 EUR
1147+0.062 EUR
1363+0.052 EUR
1690+0.042 EUR
1961+0.036 EUR
2440+0.029 EUR
2578+0.028 EUR
3000+0.027 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
ESD5Z7.0T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBD663D08A94FA8&compId=ESD5Zx-DTE.PDF?ci_sign=23882e3e778ffb5942c26931708f517d0e170996
ESD5Z7.0T1G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 200W; 7.5V; 8.8A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 10nA
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Max. forward impulse current: 8.8A
Peak pulse power dissipation: 0.2kW
Version: ESD
auf Bestellung 1483 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
584+0.12 EUR
820+0.087 EUR
1000+0.072 EUR
1163+0.061 EUR
1370+0.052 EUR
1483+0.049 EUR
Mindestbestellmenge: 584
Im Einkaufswagen  Stück im Wert von  UAH
MMBT5088LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C12D3F357DC0CE&compId=MMBT5088L_MMBT5089L.PDF?ci_sign=a6e8d97f788a8156f13573a4886db6c597d44311
MMBT5088LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Mounting: SMD
Type of transistor: NPN
Collector current: 50mA
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 50MHz
Case: SOT23; TO236AB
Polarisation: bipolar
Kind of package: reel; tape
auf Bestellung 2611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
676+0.11 EUR
1019+0.07 EUR
1341+0.053 EUR
2137+0.033 EUR
2263+0.032 EUR
Mindestbestellmenge: 358
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LC709205FXE-01TBG lc709205f-d.pdf
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; 1 x Li-Ion / Li-Po
Kind of integrated circuit: battery charging controller
Mounting: SMD
Interface: I2C
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP12
Operating temperature: -40...85°C
Supply voltage: 2.5...5V DC
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VALSZMMSZ5240BT1G
Hersteller: ONSEMI
Category: Unclassified
Description: VALSZMMSZ5240BT1G
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.044 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1N5252B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
1N5252B
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; bulk; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Kind of package: bulk
auf Bestellung 4959 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
533+0.13 EUR
926+0.077 EUR
1202+0.059 EUR
1786+0.04 EUR
2591+0.028 EUR
2874+0.025 EUR
2942+0.024 EUR
3165+0.023 EUR
Mindestbestellmenge: 533
Im Einkaufswagen  Stück im Wert von  UAH
1N5252BTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; reel,tape; CASE017AG; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: 1N52xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4935G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4935RLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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STZD3155CT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.087 EUR
Mindestbestellmenge: 4000
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FDD1600N10ALZ fdd1600n10alz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 13.6A; 14.9W; DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.78nC
On-state resistance: 0.16Ω
Drain current: 6.8A
Pulsed drain current: 13.6A
Power dissipation: 14.9W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of package: reel; tape
Case: DPAK
Produkt ist nicht verfügbar
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NC7SZ126P5X pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BDEB0DAF67249E28&compId=NC7SZ126.pdf?ci_sign=86e95585bfcc1284d5655be8904f863fa6b7a1db
NC7SZ126P5X
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC70-5
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 20µA
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NC7SZ126P5X-F22057 nc7sz126-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 2µA
Number of outputs: 1
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.099 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NUF6401MNT1G nuf6401-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NUF6400MNTBG nuf6400mn-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SNUF6401MNT1G nuf6401-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN12
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA92 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4
MMBTA92
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDP150N10 fdp150n10-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 57A
Power dissipation: 110W
Drain-source voltage: 100V
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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FDP150N10A-F102 FDP150N10A.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 50A
Power dissipation: 91W
Drain-source voltage: 100V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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NTMTSC1D6N10MCTXG ntmtsc1d6n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 267A; Idm: 900A; 145W; Power88
Kind of channel: enhancement
Mounting: SMD
Case: Power88
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 900A
Drain-source voltage: 100V
Drain current: 267A
Gate-source voltage: ±20V
Gate charge: 106nC
On-state resistance: 1.7mΩ
Power dissipation: 145W
Produkt ist nicht verfügbar
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NCV4263-2CD250R2G ncv4263-2c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SO14; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.2A
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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NCP1342AMDCDAD1R2G ncp1342-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: NCP1342AMDCDAD1R2G
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.93 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TIP50G tip47-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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NCP1342AMAACD1R2G ncp1342-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO9; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO9
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Topology: flyback
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC7812BD2TG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE9CC6D414260C7&compId=MC78xx.pdf?ci_sign=5c967ea61e70b06d60938bce0de2bd299bbedecb
MC7812BD2TG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: tube
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Mounting: SMD
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC7812BD2TR4G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE9CC6D414260C7&compId=MC78xx.pdf?ci_sign=5c967ea61e70b06d60938bce0de2bd299bbedecb
MC7812BD2TR4G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Mounting: SMD
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
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NCV7812BD2TR4G mc7800-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Number of channels: 1
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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FDP75N08A fdp75n08a-d.pdf
FDP75N08A
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 300A; 137W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 47A
Pulsed drain current: 300A
Power dissipation: 137W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSD3070 mmsd3070-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123; reel,tape
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.2A
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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CPH6341-TL-W cph6341-d.pdf
CPH6341-TL-W
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 1.6W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Gate charge: 10nC
Version: ESD
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
114+0.63 EUR
125+0.58 EUR
204+0.35 EUR
215+0.33 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
NSR0170HT1G nsr0170-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33172VDR2G mc33171-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Number of channels: dual
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z30VC pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f
MM3Z30VC
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
358+0.2 EUR
428+0.17 EUR
667+0.11 EUR
794+0.09 EUR
1021+0.07 EUR
1087+0.066 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z6V8ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z6V8ST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
528+0.14 EUR
910+0.079 EUR
1382+0.052 EUR
1651+0.043 EUR
2393+0.03 EUR
3049+0.023 EUR
3226+0.022 EUR
3334+0.021 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
MBT3906DW1T1G pVersion=0046&contRep=ZT&docId=E1C051B73AFBB2F1A6F5005056AB5A8F&compId=mbt3906.pdf?ci_sign=26e32666265289c5b995f5de9786af893ee7a106
MBT3906DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 2403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
541+0.13 EUR
758+0.094 EUR
1229+0.058 EUR
1684+0.042 EUR
2403+0.03 EUR
Mindestbestellmenge: 541
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SMBT3906DW1T1G mbt3906dw1t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MLI2V7002KT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MLI2V7002KT1G
auf Bestellung 1020000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
VES2V7002KT1G
Hersteller: ONSEMI
Category: Unclassified
Description: VES2V7002KT1G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.047 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FNB41060 fnb41060-d.pdf
FNB41060
+1
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 32W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURA205T3G mura205t3-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5221BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5221BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1085 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
782+0.092 EUR
1085+0.066 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C2V4LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C2V4LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOT23; single diode; 50uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50µA
auf Bestellung 5441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
528+0.14 EUR
794+0.09 EUR
1180+0.061 EUR
1421+0.05 EUR
2174+0.033 EUR
2924+0.024 EUR
3087+0.023 EUR
3226+0.022 EUR
Mindestbestellmenge: 528
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4681T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4681T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxT1G
Leakage current: 2µA
auf Bestellung 3960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
770+0.093 EUR
1158+0.062 EUR
1374+0.052 EUR
1873+0.038 EUR
1977+0.036 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
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