FQA13N80-F109 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 39+ | 4.65 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
39 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FQA13N80-F109 ON Semiconductor
Description: MOSFET N-CH 800V 12.6A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V.
Weitere Produktangebote FQA13N80-F109 nach Preis ab 4.71 EUR bis 27.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FQA13N80-F109 | ON Semiconductor |
 Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 310 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
FQA13N80_F109 | ON-Semiconductor |
FQA13N80 Fairchild N-MOSFET 800V 12.6A 300W FQA13N80_F109 TFQA13n80 |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
|
|
FQA13N80_F109 | ON-Semiconductor |
FQA13N80 Fairchild N-MOSFET 800V 12.6A 300W FQA13N80_F109 TFQA13n80 |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
 |
FQA13N80-F109 | onsemi |
MOSFETs TO-3P N-CH 600V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
FQA13N80-F109 | onsemi |
Description: MOSFET N-CH 800V 12.6A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
FQA13N80-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 50.4A Power dissipation: 300W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
FQA13N80-F109 | ON Semiconductor |
Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| FQA13N80_F109 | FAIRCHILD | MOSFET N-CH 800V 12.6A TO-3P |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
|
| FQA13N80-F109 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 310 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 7.03 EUR |
| 34+ | 5.15 EUR |
| 120+ | 4.71 EUR |
| FQA13N80_F109 |
|
Hersteller: ON-Semiconductor
FQA13N80 Fairchild N-MOSFET 800V 12.6A 300W FQA13N80_F109 TFQA13n80
FQA13N80 Fairchild N-MOSFET 800V 12.6A 300W FQA13N80_F109 TFQA13n80
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 10.91 EUR |
| FQA13N80_F109 |
|
Hersteller: ON-Semiconductor
FQA13N80 Fairchild N-MOSFET 800V 12.6A 300W FQA13N80_F109 TFQA13n80
FQA13N80 Fairchild N-MOSFET 800V 12.6A 300W FQA13N80_F109 TFQA13n80
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 10.91 EUR |
| FQA13N80-F109 |
|
Hersteller: onsemi
MOSFETs TO-3P N-CH 600V
MOSFETs TO-3P N-CH 600V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.44 EUR |
| 10+ | 6.53 EUR |
| FQA13N80-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 800V 12.6A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 6.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.61 EUR |
| 30+ | 7.22 EUR |
| FQA13N80-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 50.4A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 50.4A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
| FQA13N80-F109 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 800V 12.6A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
| FQA13N80_F109 |
Hersteller: FAIRCHILD
MOSFET N-CH 800V 12.6A TO-3P
MOSFET N-CH 800V 12.6A TO-3P
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.39 EUR |