KSB1151YSTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
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Technische Details KSB1151YSTU Fairchild Semiconductor
Description: TRANS PNP 60V 5A TO-126-3, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Tube, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 5 A, Part Status: Active, Supplier Device Package: TO-126-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V.
Weitere Produktangebote KSB1151YSTU nach Preis ab 0.81 EUR bis 1.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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KSB1151YSTU | onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Sil |
auf Bestellung 2476 Stücke: Lieferzeit 10-14 Tag (e) |
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KSB1151YSTU | onsemi |
Description: TRANS PNP 60V 5A TO-126-3 Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Tube Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-126-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| KSB1151YSTU |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Epitaxial Sil
Bipolar Transistors - BJT PNP Epitaxial Sil
auf Bestellung 2476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.25 EUR |
| 10+ | 1.24 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.9 EUR |
| 1920+ | 0.82 EUR |
| 5760+ | 0.81 EUR |
| KSB1151YSTU |
|
Hersteller: onsemi
Description: TRANS PNP 60V 5A TO-126-3
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
Description: TRANS PNP 60V 5A TO-126-3
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)