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Verfügbarkeit |
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FDMC86324 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Technology: PowerTrench® Case: PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 18nC On-state resistance: 40mΩ Drain current: 20A Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDMS86320 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: Power56 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41nC On-state resistance: 19mΩ Drain current: 44A Gate-source voltage: ±20V Power dissipation: 69W Pulsed drain current: 160A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS86322 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: Power56 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 55nC On-state resistance: 14mΩ Drain current: 60A Gate-source voltage: ±20V Power dissipation: 104W Pulsed drain current: 200A Drain-source voltage: 80V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDP20N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 3.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV2901DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA Type of integrated circuit: comparator Case: SO14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA Input offset voltage: 7mV Operating voltage: 3...36V Number of comparators: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV2901DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA Type of integrated circuit: comparator Case: TSSOP14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA Input offset voltage: 7mV Operating voltage: 3...36V Number of comparators: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ5246BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Manufacturer series: MMSZ52xxB Mounting: SMD Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 16V |
auf Bestellung 3328 Stücke: Lieferzeit 14-21 Tag (e) |
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NLVVHCT50ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14 Technology: CMOS; TTL Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Number of channels: 6 Supply voltage: 2...5.5V DC Application: automotive industry Kind of integrated circuit: buffer; non-inverting Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74VHCT50ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT Case: TSSOP14 Mounting: SMD Manufacturer series: VHCT Operating temperature: -40...125°C Number of channels: 6 Supply voltage: 2...5.5V DC Kind of integrated circuit: buffer; non-inverting Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP160AFCT500T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; WLCSP4; SMD Case: WLCSP4 Mounting: SMD Manufacturer series: NCP160 Operating temperature: -40...125°C Voltage drop: 0.105V Output current: 0.25A Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP160BFCT500T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; WLCSP4; SMD Case: WLCSP4 Mounting: SMD Manufacturer series: NCP160 Operating temperature: -40...125°C Voltage drop: 0.105V Output current: 0.25A Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP161BFCT500T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 450mA; WLCSP4; SMD Case: WLCSP4 Mounting: SMD Manufacturer series: NCP161 Operating temperature: -40...125°C Voltage drop: 0.19V Output current: 0.45A Number of channels: 1 Input voltage: 1.9...5.5V Tolerance: ±2% Output voltage: 5V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCV78L05ABDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.7V Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Input voltage: 7...20V Application: automotive industry Manufacturer series: MC78L00A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MOC3022SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MOC3022SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDA38N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 22A Pulsed drain current: 150A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FCPF220N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 23A Pulsed drain current: 57A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMFS6H836NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Pulsed drain current: 432A Power dissipation: 44W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMFS6H836NWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Pulsed drain current: 432A Power dissipation: 44W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FQD8P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FGH40N60SMDF | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 119nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| LM385BZ-1.2RAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SMUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: PNP x2 Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5213DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Current gain: 140 Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 825 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC86324 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Case: PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86320 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Pulsed drain current: 160A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 44A; Idm: 160A; 69W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Pulsed drain current: 160A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86322 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 14mΩ
Drain current: 60A
Gate-source voltage: ±20V
Power dissipation: 104W
Pulsed drain current: 200A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 14mΩ
Drain current: 60A
Gate-source voltage: ±20V
Power dissipation: 104W
Pulsed drain current: 200A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP20N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS2572 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.07 EUR |
| 49+ | 1.47 EUR |
| 54+ | 1.33 EUR |
| 57+ | 1.26 EUR |
| 100+ | 1.22 EUR |
| NCV2901DR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Input offset voltage: 7mV
Operating voltage: 3...36V
Number of comparators: 4
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Input offset voltage: 7mV
Operating voltage: 3...36V
Number of comparators: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV2901DTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Input offset voltage: 7mV
Operating voltage: 3...36V
Number of comparators: 4
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Input offset voltage: 7mV
Operating voltage: 3...36V
Number of comparators: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5246BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ52xxB
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 16V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ52xxB
Mounting: SMD
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 16V
auf Bestellung 3328 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 676+ | 0.11 EUR |
| 750+ | 0.095 EUR |
| 1029+ | 0.069 EUR |
| 1241+ | 0.058 EUR |
| 1894+ | 0.038 EUR |
| 2174+ | 0.033 EUR |
| 2253+ | 0.032 EUR |
| 2305+ | 0.031 EUR |
| NLVVHCT50ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14
Technology: CMOS; TTL
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 6
Supply voltage: 2...5.5V DC
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14
Technology: CMOS; TTL
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 6
Supply voltage: 2...5.5V DC
Application: automotive industry
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHCT50ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Case: TSSOP14
Mounting: SMD
Manufacturer series: VHCT
Operating temperature: -40...125°C
Number of channels: 6
Supply voltage: 2...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; TSSOP14; VHCT
Case: TSSOP14
Mounting: SMD
Manufacturer series: VHCT
Operating temperature: -40...125°C
Number of channels: 6
Supply voltage: 2...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP160AFCT500T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| NCP160BFCT500T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP160
Operating temperature: -40...125°C
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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Im Einkaufswagen
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| NCP161BFCT500T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 450mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Voltage drop: 0.19V
Output current: 0.45A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 450mA; WLCSP4; SMD
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP161
Operating temperature: -40...125°C
Voltage drop: 0.19V
Output current: 0.45A
Number of channels: 1
Input voltage: 1.9...5.5V
Tolerance: ±2%
Output voltage: 5V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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Im Einkaufswagen
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| NCV78L05ABDR2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Application: automotive industry
Manufacturer series: MC78L00A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 7...20V
Application: automotive industry
Manufacturer series: MC78L00A
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| MOC3022SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MOC3022SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDA38N30 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FCPF220N80 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 23A
Pulsed drain current: 57A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 23A
Pulsed drain current: 57A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H836NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H836NWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Pulsed drain current: 432A
Power dissipation: 44W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD8P10TM-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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Im Einkaufswagen
Stück im Wert von UAH
| FGH40N60SMDF |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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Im Einkaufswagen
Stück im Wert von UAH
| LM385BZ-1.2RAG |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
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Im Einkaufswagen
Stück im Wert von UAH
| SMUN5113DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 313+ | 0.23 EUR |
| 491+ | 0.15 EUR |
| 627+ | 0.11 EUR |
| 957+ | 0.075 EUR |
| 1238+ | 0.058 EUR |
| 1309+ | 0.055 EUR |
| MUN5213DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 825 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 385+ | 0.19 EUR |
| 650+ | 0.11 EUR |
| 817+ | 0.088 EUR |
| 825+ | 0.087 EUR |