Foto | Bezeichnung | Hersteller | Beschreibung |
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NCV8705MWADJTCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 0.8...5.15V Output current: 0.5A Case: DFN8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
HUF76639S3ST | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 180W Case: TO263AB Gate-source voltage: ±16V On-state resistance: 26mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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M74VHC1G132DFT1G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Number of channels: single; 1 Delay time: 3.6ns Family: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MJW21196G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3 Polarisation: bipolar Kind of package: tube Mounting: THT Type of transistor: NPN Collector current: 16A Power dissipation: 200W Collector-emitter voltage: 250V Case: TO247-3 |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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M74VHC1GT66DTT1G | ONSEMI |
![]() Description: IC: analog switch; Ch: 1; TSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO Type of integrated circuit: analog switch Case: TSOP5 Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: VHC Quiescent current: 40µA Number of channels: 1 Supply voltage: 2...5.5V DC Kind of output: SPST-NO Technology: TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NSVBC858AWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N4149TR | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.5A Semiconductor structure: single diode Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
auf Bestellung 7515 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC5338D | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB Mounting: THT Case: TO220AB Kind of package: bulk Collector current: 5A Pulsed collector current: 10A Current gain: 15...25 Power dissipation: 75W Collector-emitter voltage: 450V Frequency: 11MHz Polarisation: bipolar Features of semiconductor devices: integrated anti-parallel diode Type of transistor: NPN |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMD82100 | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12 Kind of channel: enhancement Case: PQFN12 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Gate charge: 17nC On-state resistance: 35mΩ Power dissipation: 2.1W Gate-source voltage: ±20V Drain current: 25A Pulsed drain current: 80A Drain-source voltage: 100V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMD82100L | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 80A; 38W; PQFN12 Kind of channel: enhancement Case: PQFN12 Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Gate charge: 24nC On-state resistance: 36mΩ Power dissipation: 38W Gate-source voltage: ±20V Drain current: 24A Pulsed drain current: 80A Drain-source voltage: 100V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDT1600N10ALZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223 Case: SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar On-state resistance: 0.16Ω Drain current: 3.5A Power dissipation: 10.42W Gate-source voltage: ±20V Drain-source voltage: 100V |
auf Bestellung 2577 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS025P04M8LT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -34.6A; Idm: -204A; 22.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -34.6A Pulsed drain current: -204A Power dissipation: 22.1W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
GRUGBU6M | ONSEMI |
Category: Transistors - Unclassified Description: GRUGBU6M |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD8011MUT5G | ONSEMI |
![]() Description: Diode: TVS; 7.3V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 7.3V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SZ1SMB5920BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBZ5238BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 8.7V; SMD; reel,tape; SOT23; single diode; 3uA Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOT23 Type of diode: Zener Leakage current: 3µA Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 8.7V Manufacturer series: MMBZ52xxBLT1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
SZMMBZ5238BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 8.7V; SMD; reel,tape; SOT23; single diode; 3uA Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOT23 Type of diode: Zener Leakage current: 3µA Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 8.7V Application: automotive industry Manufacturer series: MMBZ52xxBLT1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP114AMX185TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP114 Case: uDFN4 Type of integrated circuit: voltage regulator Voltage drop: 0.33V Output current: 0.3A Number of channels: 1 Tolerance: ±2% Input voltage: 1.7...5.5V Output voltage: 1.85V Mounting: SMD |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP186BMX185TAG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP186x Case: XDFN8 Type of integrated circuit: voltage regulator Voltage drop: 0.28V Output current: 1A Number of channels: 2 Tolerance: ±1% Input voltage: 1.8...5.5V Output voltage: 1.85V Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1SMA5918BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 1914 Stücke: Lieferzeit 14-21 Tag (e) |
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SZ1SMA5918BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP51400MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Kind of integrated circuit: DDR memory termination regulator Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Application: for DDR memories Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP51401MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP51402MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP51403MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Application: for DDR memories Kind of integrated circuit: DDR memory termination regulator Mounting: SMD Type of integrated circuit: PMIC Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCV51400MNTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Kind of integrated circuit: DDR memory termination regulator Type of integrated circuit: PMIC Mounting: SMD Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Application: automotive industry; for DDR memories Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCV51400MWTXG | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Kind of integrated circuit: DDR memory termination regulator Type of integrated circuit: PMIC Mounting: SMD Operating temperature: max. 150°C Output voltage: -0.1...3.5V Output current: 3A Operating voltage: 0.5...1.8/2.375...5.5V DC Number of channels: 1 Application: automotive industry; for DDR memories Case: DFN10 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FAN251040MNTXG | ONSEMI |
![]() Description: PMIC; DC/DC converter; SMD; reel,tape Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP81140MNTXG | ONSEMI |
![]() Description: IC: PMIC; QFN32; buck; 4÷6.5VDC Topology: buck Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...100°C Output current: 850µA Operating voltage: 4...6.5V DC Number of channels: 1 Case: QFN32 Frequency: 290...590kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDB13AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Power dissipation: 115W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 761 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV8114ASN330T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOC8050SR2M | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV21872DMR2G | ONSEMI |
![]() Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 270kHz Mounting: SMT Case: Micro8 Operating temperature: -40...125°C Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA Input offset voltage: 0.045mV Slew rate: 0.1V/μs Number of channels: dual |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY100T65SCDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3 Mounting: THT Type of transistor: IGBT Case: TO247-3 Gate charge: 157nC Power dissipation: 375W Gate-emitter voltage: ±25V Collector current: 100A Pulsed collector current: 300A Collector-emitter voltage: 650V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX85C18 | ONSEMI |
![]() Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
74AUP1G97FHX | ONSEMI |
![]() Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP Kind of integrated circuit: buffer; inverter; Schmitt trigger Manufacturer series: AUP Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
74AUP1G97L6X | ONSEMI |
![]() Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP Kind of integrated circuit: buffer; inverter; Schmitt trigger Manufacturer series: AUP Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
74AUP1G98L6X | ONSEMI |
![]() Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP Kind of integrated circuit: buffer; inverter; Schmitt trigger Number of channels: 1 Manufacturer series: AUP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FFB2227A | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MBRAF3200T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 100A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
EMX1DXV6T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NSVEMX1DXV6T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
EGP30G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 3A; reel,tape; DO201AD; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Case: DO201AD Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NC7SP157P6X | ONSEMI |
![]() Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic; NC Supply voltage: 0.9...3.6V DC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Family: NC Kind of package: reel; tape Case: SC88 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Number of inputs: 3 Manufacturer series: TinyLogic Technology: CMOS |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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ISL9V3040D3ST | ONSEMI |
![]() Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
ISL9V3040P3 | ONSEMI |
![]() Description: Transistor: IGBT; 400V; 17A; 150W; TO220-3; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: TO220-3 Gate-emitter voltage: ±10V Mounting: THT Gate charge: 17nC Kind of package: tube Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDD2582 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 172mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NVMFS5C612NLAFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 91nC On-state resistance: 1.36mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 83W Drain current: 250A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMFS5C612NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 91nC On-state resistance: 1.36mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 83W Drain current: 250A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NVMFS5C612NLWFAFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NUP4202W1T2G | ONSEMI |
![]() Description: Diode: TVS array; bidirectional; SC88; reel,tape Type of diode: TVS array Semiconductor structure: bidirectional Mounting: SMD Case: SC88 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP3230MNTXG | ONSEMI |
![]() Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -40...125°C Output current: 30A Number of channels: 1 Operating voltage: 4.5...20.5V DC Frequency: 450...550kHz Topology: buck |
Produkt ist nicht verfügbar |
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NCP3235MNTXG | ONSEMI |
![]() Description: IC: PMIC; QFN40; buck; 4.5÷23VDC Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -40...125°C Output current: 15A Number of channels: 1 Operating voltage: 4.5...23V DC Frequency: 500...1210kHz Topology: buck |
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NCP81274MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Input voltage: 4.5...20V Frequency: 250...1200kHz Topology: buck |
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NCP81276MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Input voltage: 4.5...20V Frequency: 250...1200kHz Topology: buck |
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NCP81611MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Input voltage: 2.8...20V Frequency: 250...1200kHz Topology: buck |
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NCP4200MNR2G | ONSEMI |
![]() Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -40...125°C Output voltage: 0.375...1.8V Number of channels: 1 Input voltage: 1.7...24V Frequency: 220...850kHz; 0.25...6MHz Topology: buck |
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HUF75344G3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 178 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP711ASNADJT1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.355V Output voltage: 1.2...17V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: NCP711 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...18V |
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NTP360N80S3Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 96W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 25.3nC |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV8705MWADJTCG |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.15V
Output current: 0.5A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 0.8...5.15V
Output current: 0.5A
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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HUF76639S3ST |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 180W
Case: TO263AB
Gate-source voltage: ±16V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 180W
Case: TO263AB
Gate-source voltage: ±16V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
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M74VHC1G132DFT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of channels: single; 1
Delay time: 3.6ns
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of channels: single; 1
Delay time: 3.6ns
Family: VHC
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MJW21196G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Type of transistor: NPN
Collector current: 16A
Power dissipation: 200W
Collector-emitter voltage: 250V
Case: TO247-3
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Type of transistor: NPN
Collector current: 16A
Power dissipation: 200W
Collector-emitter voltage: 250V
Case: TO247-3
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 5.96 EUR |
M74VHC1GT66DTT1G |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; TSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Type of integrated circuit: analog switch
Case: TSOP5
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Quiescent current: 40µA
Number of channels: 1
Supply voltage: 2...5.5V DC
Kind of output: SPST-NO
Technology: TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; TSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Type of integrated circuit: analog switch
Case: TSOP5
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Quiescent current: 40µA
Number of channels: 1
Supply voltage: 2...5.5V DC
Kind of output: SPST-NO
Technology: TTL
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NSVBC858AWT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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1N4149TR |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
auf Bestellung 7515 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
584+ | 0.12 EUR |
1021+ | 0.07 EUR |
1511+ | 0.047 EUR |
1806+ | 0.04 EUR |
2075+ | 0.034 EUR |
3650+ | 0.02 EUR |
3847+ | 0.019 EUR |
KSC5338D |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: bulk
Collector current: 5A
Pulsed collector current: 10A
Current gain: 15...25
Power dissipation: 75W
Collector-emitter voltage: 450V
Frequency: 11MHz
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 75W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: bulk
Collector current: 5A
Pulsed collector current: 10A
Current gain: 15...25
Power dissipation: 75W
Collector-emitter voltage: 450V
Frequency: 11MHz
Polarisation: bipolar
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
69+ | 1.05 EUR |
91+ | 0.79 EUR |
96+ | 0.75 EUR |
FDMD82100 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12
Kind of channel: enhancement
Case: PQFN12
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Gate charge: 17nC
On-state resistance: 35mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Drain current: 25A
Pulsed drain current: 80A
Drain-source voltage: 100V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 25A; Idm: 80A; 2.1W; PQFN12
Kind of channel: enhancement
Case: PQFN12
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Gate charge: 17nC
On-state resistance: 35mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Drain current: 25A
Pulsed drain current: 80A
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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FDMD82100L |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 80A; 38W; PQFN12
Kind of channel: enhancement
Case: PQFN12
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Gate charge: 24nC
On-state resistance: 36mΩ
Power dissipation: 38W
Gate-source voltage: ±20V
Drain current: 24A
Pulsed drain current: 80A
Drain-source voltage: 100V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 24A; Idm: 80A; 38W; PQFN12
Kind of channel: enhancement
Case: PQFN12
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Gate charge: 24nC
On-state resistance: 36mΩ
Power dissipation: 38W
Gate-source voltage: ±20V
Drain current: 24A
Pulsed drain current: 80A
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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FDT1600N10ALZ |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 0.16Ω
Drain current: 3.5A
Power dissipation: 10.42W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Case: SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 0.16Ω
Drain current: 3.5A
Power dissipation: 10.42W
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 2577 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
85+ | 0.85 EUR |
100+ | 0.72 EUR |
144+ | 0.5 EUR |
152+ | 0.47 EUR |
500+ | 0.45 EUR |
NVMFS025P04M8LT1G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -34.6A; Idm: -204A; 22.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -34.6A
Pulsed drain current: -204A
Power dissipation: 22.1W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -34.6A; Idm: -204A; 22.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -34.6A
Pulsed drain current: -204A
Power dissipation: 22.1W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GRUGBU6M |
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
700+ | 0.83 EUR |
ESD8011MUT5G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7.3V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 7.3V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7.3V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 7.3V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
236+ | 0.3 EUR |
272+ | 0.26 EUR |
334+ | 0.21 EUR |
439+ | 0.16 EUR |
516+ | 0.14 EUR |
544+ | 0.13 EUR |
SZ1SMB5920BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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MMBZ5238BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.7V; SMD; reel,tape; SOT23; single diode; 3uA
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 3µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 8.7V
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.7V; SMD; reel,tape; SOT23; single diode; 3uA
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 3µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 8.7V
Manufacturer series: MMBZ52xxBLT1G
Produkt ist nicht verfügbar
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SZMMBZ5238BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.7V; SMD; reel,tape; SOT23; single diode; 3uA
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 3µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 8.7V
Application: automotive industry
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.7V; SMD; reel,tape; SOT23; single diode; 3uA
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Type of diode: Zener
Leakage current: 3µA
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 8.7V
Application: automotive industry
Manufacturer series: MMBZ52xxBLT1G
Produkt ist nicht verfügbar
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NCP114AMX185TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP114
Case: uDFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.33V
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.85V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP114
Case: uDFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.33V
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.85V
Mounting: SMD
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
250+ | 0.29 EUR |
379+ | 0.19 EUR |
424+ | 0.17 EUR |
496+ | 0.14 EUR |
715+ | 0.1 EUR |
758+ | 0.094 EUR |
NCP186BMX185TAG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP186x
Case: XDFN8
Type of integrated circuit: voltage regulator
Voltage drop: 0.28V
Output current: 1A
Number of channels: 2
Tolerance: ±1%
Input voltage: 1.8...5.5V
Output voltage: 1.85V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP186x
Case: XDFN8
Type of integrated circuit: voltage regulator
Voltage drop: 0.28V
Output current: 1A
Number of channels: 2
Tolerance: ±1%
Input voltage: 1.8...5.5V
Output voltage: 1.85V
Mounting: SMD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
1SMA5918BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 1914 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
230+ | 0.31 EUR |
311+ | 0.23 EUR |
355+ | 0.2 EUR |
538+ | 0.13 EUR |
SZ1SMA5918BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NCP51400MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: for DDR memories
Case: DFN10
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NCP51401MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCP51402MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCP51403MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCV51400MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
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NCV51400MWTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
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FAN251040MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP81140MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
Produkt ist nicht verfügbar
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FDB13AN06A0 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
43+ | 1.67 EUR |
44+ | 1.63 EUR |
NCV8114ASN330T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MOC8050SR2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 0.35 EUR |
NCV21872DMR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Operating temperature: -40...125°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Input offset voltage: 0.045mV
Slew rate: 0.1V/μs
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Operating temperature: -40...125°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Input offset voltage: 0.045mV
Slew rate: 0.1V/μs
Number of channels: dual
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
89+ | 0.81 EUR |
104+ | 0.69 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
500+ | 0.46 EUR |
FGY100T65SCDT |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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BZX85C18 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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74AUP1G97FHX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
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74AUP1G97L6X |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
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74AUP1G98L6X |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
Manufacturer series: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
Manufacturer series: AUP
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FFB2227A |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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MBRAF3200T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 100A
Kind of package: reel; tape
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EMX1DXV6T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
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NSVEMX1DXV6T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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EGP30G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Reverse recovery time: 50ns
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NC7SP157P6X |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic; NC
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Family: NC
Kind of package: reel; tape
Case: SC88
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 3
Manufacturer series: TinyLogic
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic; NC
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Family: NC
Kind of package: reel; tape
Case: SC88
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 3
Manufacturer series: TinyLogic
Technology: CMOS
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
175+ | 0.41 EUR |
196+ | 0.37 EUR |
214+ | 0.33 EUR |
254+ | 0.28 EUR |
313+ | 0.23 EUR |
610+ | 0.12 EUR |
650+ | 0.11 EUR |
ISL9V3040D3ST |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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ISL9V3040P3 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FDD2582 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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NVMFS5C612NLAFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NVMFS5C612NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NVMFS5C612NLWFAFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1500+ | 3.39 EUR |
NUP4202W1T2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Kind of package: reel; tape
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NCP3230MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
Number of channels: 1
Operating voltage: 4.5...20.5V DC
Frequency: 450...550kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
Number of channels: 1
Operating voltage: 4.5...20.5V DC
Frequency: 450...550kHz
Topology: buck
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NCP3235MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15A
Number of channels: 1
Operating voltage: 4.5...23V DC
Frequency: 500...1210kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15A
Number of channels: 1
Operating voltage: 4.5...23V DC
Frequency: 500...1210kHz
Topology: buck
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NCP81274MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
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NCP81276MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
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NCP81611MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 2.8...20V
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 2.8...20V
Frequency: 250...1200kHz
Topology: buck
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NCP4200MNR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.375...1.8V
Number of channels: 1
Input voltage: 1.7...24V
Frequency: 220...850kHz; 0.25...6MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.375...1.8V
Number of channels: 1
Input voltage: 1.7...24V
Frequency: 220...850kHz; 0.25...6MHz
Topology: buck
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HUF75344G3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.85 EUR |
16+ | 4.6 EUR |
21+ | 3.49 EUR |
22+ | 3.3 EUR |
23+ | 3.25 EUR |
30+ | 3.19 EUR |
NCP711ASNADJT1G |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
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NTP360N80S3Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.36 EUR |
27+ | 2.75 EUR |
28+ | 2.59 EUR |