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MC14018BDR2G MC14018BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
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MC14011UBDG MC14011UBDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 550 Stücke:
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242+0.3 EUR
261+0.27 EUR
376+0.19 EUR
397+0.18 EUR
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MC14011BDR2G MC14011BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G MC14011UBDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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55GN01CA-TB-E 55GN01CA-TB-E ONSEMI 55gn01ca-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.2W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...180
Polarisation: bipolar
Kind of transistor: RF
Frequency: 3...5.5GHz
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55GN01FA-TL-H ONSEMI 55gn01fa.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Case: SC81
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.25W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...160
Polarisation: bipolar
Application: automotive industry
Kind of transistor: RF
Frequency: 3...5.5GHz
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FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Kind of package: reel; tape
Pulsed drain current: 132A
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FQB33N10TM FQB33N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel; tape
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FOD3150 FOD3150 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EB1E34F00C7&compId=FOD3150.pdf?ci_sign=d8ceb18e6c8410f6730aa696f9ae8e1f2574b4d0 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
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66+1.1 EUR
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H11F3M H11F3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40B60D6&compId=H11F3M.pdf?ci_sign=7fdda23edd7f61656e7c6bfb5d2c9ac2ba2f73cd Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
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FDC642P ONSEMI fdc642p-d.pdf ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NSR20F30NXT5G
+1
 		NSR20F30NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. load current: 4A
Max. forward impulse current: 28A
Kind of package: reel; tape
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139+0.52 EUR
211+0.34 EUR
224+0.32 EUR
500+0.31 EUR
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UJ4C075018K3S ONSEMI uj4c075018k3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
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FOD4116SD ONSEMI FAIR-S-A0001476775-1.pdf?t.download=true&u=5oefqw fod4118-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
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FOD4116SDV ONSEMI fod4118-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
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NTB004N10G ONSEMI ntb004n10g-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 201A
Power dissipation: 340W
Pulsed drain current: 3002A
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NCP781BMN050TAG ONSEMI ncp781-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 7V
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NCP781BMN033TAG ONSEMI ncp781-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 6.5V
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NCP781BMNADJTAG ONSEMI ncp781-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.23...15V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
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NTMTSC002N10MCTXG ONSEMI ntmtsc002n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS002N10MCLT1G ONSEMI ntmfs002n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 175A
Pulsed drain current: 1536A
Power dissipation: 94W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTS002N10MCTXG ONSEMI ntmts002n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS002N10MCLT1G ONSEMI nvmfws002n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 177A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQU2N100TU ONSEMI fqu2n100-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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LM285D-2.5R2G LM285D-2.5R2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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SZBZX84C3V6ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C3V6LT1G SZBZX84C3V6LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C3V9ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C3V9LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
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KSD5041RTA KSD5041RTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE47631A00620D6&compId=KSD5041.pdf?ci_sign=997635a7f1bce6e5b02298a59e5b785187039794 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
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KSD1408YTU KSD1408YTU ONSEMI ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Collector-emitter voltage: 80V
Current gain: 120...240
Frequency: 8MHz
Kind of package: tube
Polarisation: bipolar
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KSD560YTU KSD560YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
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UJ3D1210KSD ONSEMI da008690 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
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UJ3D06560KSD ONSEMI DS_UJ3D06560KSD.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
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SZ1SMB5931BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCP3420DR2G NCP3420DR2G ONSEMI ncp3420-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
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1N4148WS 1N4148WS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BD9C6DCC794469&compId=1N4148WS.pdf?ci_sign=5d91db83646fc46518beb8bfbde45235995582e3 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
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758+0.094 EUR
834+0.086 EUR
1097+0.065 EUR
1238+0.058 EUR
1909+0.037 EUR
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FDP027N08B-F102 ONSEMI fdp027n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
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NTHL027N65S3HF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDA83EB3380BC3AE0C4&compId=NTHL027N65S3HF.pdf?ci_sign=3959c9f932c9b00219324fdc73dd94cf7bf02377 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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NVHL027N65S3F ONSEMI nvhl027n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 187.5A; 595W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTH4L027N65S3F ONSEMI nth4l027n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS027N10MCLT1G ONSEMI nvmfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS027N10MCLTAG ONSEMI nvtfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDS4480 FDS4480 ONSEMI fds4480-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Gate charge: 41nC
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2338 Stücke:
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59+1.23 EUR
66+1.09 EUR
86+0.83 EUR
91+0.79 EUR
500+0.78 EUR
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MJW21195G MJW21195G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD14954CB170469&compId=MJW21195G.PDF?ci_sign=49766cf988f1496fe41bc2d1dd8dfe680fba53cb Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
auf Bestellung 167 Stücke:
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13+5.83 EUR
15+5.11 EUR
19+3.88 EUR
20+3.62 EUR
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MMBT589LT1G MMBT589LT1G ONSEMI mmbt589lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1521 Stücke:
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129+0.56 EUR
178+0.4 EUR
260+0.28 EUR
309+0.23 EUR
496+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 129
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MUN5132DW1T1G ONSEMI DTA143ED-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Produkt ist nicht verfügbar
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MC74LVX132DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62F3373D360D3&compId=MC74LVX132-D.pdf?ci_sign=3c39825c0eca9e403d1d915f0215e73ce67cc8f5 Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
Produkt ist nicht verfügbar
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MC74LVX132DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62E95D0F4E0D3&compId=MC74LVX132-D.pdf?ci_sign=44a0b535506edbf274ed667f6ed74b72195a3ae6 Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
Produkt ist nicht verfügbar
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NLVVHC1G132DFT1G ONSEMI mc74vhc1g132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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NLVVHC1G132DTT1G NLVVHC1G132DTT1G ONSEMI mc74vhc1g132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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1N5339BRLG ONSEMI 1n5333b-d.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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D-STPR-GEVK ONSEMI D-STPR-GEVK_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Kit contents: prototype board
Components: AMIS30543
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Kind of connector: pin strips; screw
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FCH070N60E ONSEMI fch070n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Produkt ist nicht verfügbar
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FCH170N60 ONSEMI fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FCP170N60 ONSEMI FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw fcp170n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Produkt ist nicht verfügbar
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NTJD1155LT1G NTJD1155LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A243218288745&compId=NTJD1155L.PDF?ci_sign=6c19d42204cb111b22583f0318a94bc8c98871a3 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
161+0.44 EUR
196+0.37 EUR
275+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 112
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SZMMBZ20VALT1G SZMMBZ20VALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: TVS array
Max. forward impulse current: 1.4A
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
auf Bestellung 5500 Stücke:
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500+0.14 EUR
685+0.1 EUR
782+0.092 EUR
1000+0.072 EUR
1909+0.037 EUR
2017+0.035 EUR
Mindestbestellmenge: 500
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NTF3055L108T1G NTF3055L108T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1A1AF901060CE&compId=NTF3055L108.PDF?ci_sign=66aa8832361606ab6f2a624f5324ebb290cd2e89 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Power dissipation: 1.3W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.12Ω
Drain current: 1.4A
Pulsed drain current: 9A
Gate-source voltage: ±15V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1301 Stücke:
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103+0.7 EUR
146+0.49 EUR
154+0.46 EUR
500+0.45 EUR
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MC14018BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6
MC14018BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; 3÷18VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Kind of integrated circuit: counter; divide by N
Supply voltage: 3...18V DC
Technology: CMOS
Case: SOIC16
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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MC14011UBDG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14011UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
220+0.33 EUR
242+0.3 EUR
261+0.27 EUR
376+0.19 EUR
397+0.18 EUR
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MC14011BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14011BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14011UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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55GN01CA-TB-E 55gn01ca-d.pdf
55GN01CA-TB-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.2W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...180
Polarisation: bipolar
Kind of transistor: RF
Frequency: 3...5.5GHz
Produkt ist nicht verfügbar
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55GN01FA-TL-H 55gn01fa.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.25W; SC81
Case: SC81
Kind of package: reel; tape
Type of transistor: NPN
Collector current: 70mA
Power dissipation: 0.25W
Mounting: SMD
Collector-emitter voltage: 10V
Current gain: 100...160
Polarisation: bipolar
Application: automotive industry
Kind of transistor: RF
Frequency: 3...5.5GHz
Produkt ist nicht verfügbar
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FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 40nC
Kind of package: reel; tape
Pulsed drain current: 132A
Produkt ist nicht verfügbar
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FQB33N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec
FQB33N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 51nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FOD3150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2EB1E34F00C7&compId=FOD3150.pdf?ci_sign=d8ceb18e6c8410f6730aa696f9ae8e1f2574b4d0
FOD3150
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
53+1.36 EUR
62+1.16 EUR
66+1.1 EUR
250+1.06 EUR
Mindestbestellmenge: 48
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H11F3M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40B60D6&compId=H11F3M.pdf?ci_sign=7fdda23edd7f61656e7c6bfb5d2c9ac2ba2f73cd
H11F3M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
auf Bestellung 821 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.96 EUR
23+3.25 EUR
24+3.06 EUR
100+3 EUR
500+2.95 EUR
Mindestbestellmenge: 15
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FDC642P fdc642p-d.pdf ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NSR20F30NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0
NSR20F30NXT5G
+1
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DSN0603-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. load current: 4A
Max. forward impulse current: 28A
Kind of package: reel; tape
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
139+0.52 EUR
211+0.34 EUR
224+0.32 EUR
500+0.31 EUR
Mindestbestellmenge: 97
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UJ4C075018K3S uj4c075018k3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FOD4116SD FAIR-S-A0001476775-1.pdf?t.download=true&u=5oefqw fod4118-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Turn-off time: 52µs
Turn-on time: 60µs
Produkt ist nicht verfügbar
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FOD4116SDV fod4118-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac,zero voltage crossing driver
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4116
Kind of output: triac; zero voltage crossing driver
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Conform to the norm: VDE
Turn-off time: 52µs
Turn-on time: 60µs
Produkt ist nicht verfügbar
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NTB004N10G ntb004n10g-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 201A; Idm: 3002A; 340W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 175nC
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 201A
Power dissipation: 340W
Pulsed drain current: 3002A
Produkt ist nicht verfügbar
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NCP781BMN050TAG ncp781-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 7V
Produkt ist nicht verfügbar
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NCP781BMN033TAG ncp781-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 100mA; DFN6; SMD; NCP781
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Voltage drop: 6.5V
Produkt ist nicht verfügbar
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NCP781BMNADJTAG ncp781-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.23÷15V; 100mA; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.23...15V
Output current: 0.1A
Case: DFN6
Mounting: SMD
Manufacturer series: NCP781
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...150V
Produkt ist nicht verfügbar
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NTMTSC002N10MCTXG ntmtsc002n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS002N10MCLT1G ntmfs002n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 175A; Idm: 1536A; 94W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 175A
Pulsed drain current: 1536A
Power dissipation: 94W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMTS002N10MCTXG ntmts002n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 236A; Idm: 900A; 128W; TDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 236A
Pulsed drain current: 900A
Power dissipation: 128W
Case: TDFNW8
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS002N10MCLT1G nvmfws002n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 177A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 97nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQU2N100TU fqu2n100-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM285D-2.5R2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b
LM285D-2.5R2G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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SZBZX84C3V6ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C3V6LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C3V6LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C3V9ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C3V9LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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KSD5041RTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE47631A00620D6&compId=KSD5041.pdf?ci_sign=997635a7f1bce6e5b02298a59e5b785187039794
KSD5041RTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1408YTU ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw
KSD1408YTU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Collector-emitter voltage: 80V
Current gain: 120...240
Frequency: 8MHz
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD560YTU pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7
KSD560YTU
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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UJ3D1210KSD da008690
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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UJ3D06560KSD DS_UJ3D06560KSD.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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SZ1SMB5931BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP3420DR2G ncp3420-d.pdf
NCP3420DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
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1N4148WS pVersion=0046&contRep=ZT&docId=005056AB752F1EE581BD9C6DCC794469&compId=1N4148WS.pdf?ci_sign=5d91db83646fc46518beb8bfbde45235995582e3
1N4148WS
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 4415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
604+0.12 EUR
758+0.094 EUR
834+0.086 EUR
1097+0.065 EUR
1238+0.058 EUR
1909+0.037 EUR
2017+0.035 EUR
3000+0.034 EUR
Mindestbestellmenge: 604
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FDP027N08B-F102 fdp027n08b-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL027N65S3HF pVersion=0046&contRep=ZT&docId=005056AB90B41EDA83EB3380BC3AE0C4&compId=NTHL027N65S3HF.pdf?ci_sign=3959c9f932c9b00219324fdc73dd94cf7bf02377
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Produkt ist nicht verfügbar
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NVHL027N65S3F nvhl027n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 187.5A; 595W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTH4L027N65S3F nth4l027n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS027N10MCLT1G nvmfs027n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFWS027N10MCLTAG nvtfs027n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDS4480 fds4480-d.pdf
FDS4480
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Gate charge: 41nC
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 2338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
66+1.09 EUR
86+0.83 EUR
91+0.79 EUR
500+0.78 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
MJW21195G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD14954CB170469&compId=MJW21195G.PDF?ci_sign=49766cf988f1496fe41bc2d1dd8dfe680fba53cb
MJW21195G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Polarisation: bipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.83 EUR
15+5.11 EUR
19+3.88 EUR
20+3.62 EUR
Mindestbestellmenge: 13
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MMBT589LT1G mmbt589lt1-d.pdf
MMBT589LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
178+0.4 EUR
260+0.28 EUR
309+0.23 EUR
496+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 129
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MUN5132DW1T1G DTA143ED-D.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LVX132DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62F3373D360D3&compId=MC74LVX132-D.pdf?ci_sign=3c39825c0eca9e403d1d915f0215e73ce67cc8f5
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14NB
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74LVX132DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62E95D0F4E0D3&compId=MC74LVX132-D.pdf?ci_sign=44a0b535506edbf274ed667f6ed74b72195a3ae6
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...125°C
Kind of package: tube
Kind of input: with Schmitt trigger
Kind of integrated circuit: Schmitt trigger
Manufacturer series: LVX
Produkt ist nicht verfügbar
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NLVVHC1G132DFT1G mc74vhc1g132-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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NLVVHC1G132DTT1G mc74vhc1g132-d.pdf
NLVVHC1G132DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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1N5339BRLG 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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D-STPR-GEVK D-STPR-GEVK_Web.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Kit contents: prototype board
Components: AMIS30543
Interface: I2C; I2C - Slave; SPI
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Kind of connector: pin strips; screw
Produkt ist nicht verfügbar
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FCH070N60E fch070n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Produkt ist nicht verfügbar
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FCH170N60 fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FCP170N60 FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw fcp170n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Produkt ist nicht verfügbar
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NTJD1155LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A243218288745&compId=NTJD1155L.PDF?ci_sign=6c19d42204cb111b22583f0318a94bc8c98871a3
NTJD1155LT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Kind of package: reel; tape
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
161+0.44 EUR
196+0.37 EUR
275+0.26 EUR
291+0.25 EUR
Mindestbestellmenge: 112
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SZMMBZ20VALT1G mmbz5v6alt1-d.pdf
SZMMBZ20VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of diode: TVS array
Max. forward impulse current: 1.4A
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Application: automotive industry
Semiconductor structure: common anode; double
auf Bestellung 5500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
685+0.1 EUR
782+0.092 EUR
1000+0.072 EUR
1909+0.037 EUR
2017+0.035 EUR
Mindestbestellmenge: 500
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NTF3055L108T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1A1AF901060CE&compId=NTF3055L108.PDF?ci_sign=66aa8832361606ab6f2a624f5324ebb290cd2e89
NTF3055L108T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Power dissipation: 1.3W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.12Ω
Drain current: 1.4A
Pulsed drain current: 9A
Gate-source voltage: ±15V
Drain-source voltage: 60V
Kind of channel: enhancement
auf Bestellung 1301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
146+0.49 EUR
154+0.46 EUR
500+0.45 EUR
Mindestbestellmenge: 103
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