Produkte > ONSEMI > FCP170N60
FCP170N60

FCP170N60 onsemi

fcp170n60-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.27 EUR
10+ 11.02 EUR
100+ 9.03 EUR
500+ 7.69 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details FCP170N60 onsemi

Description: MOSFET N-CH 600V 22A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V.

Weitere Produktangebote FCP170N60 nach Preis ab 8.11 EUR bis 14.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
FCP170N60 FCP170N60 Hersteller : onsemi / Fairchild FCP170N60_D-2311978.pdf MOSFET Power MOSFET, N-Channel, SUPERFET II, FAST, 600 V, 22 A, 170 mohm, TO-220
auf Bestellung 335 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.2 EUR
10+ 12.87 EUR
100+ 11.02 EUR
500+ 10.56 EUR
1000+ 8.27 EUR
2500+ 8.19 EUR
5000+ 8.11 EUR
Mindestbestellmenge: 4
FCP170N60 Hersteller : ONSEMI FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FCP170N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
FCP170N60 FCP170N60 Hersteller : ON Semiconductor fcp170n60.pdf Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FCP170N60 FCP170N60 Hersteller : ON Semiconductor fcp170n60.pdf Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
FCP170N60 Hersteller : Fairchild Semiconductor FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
Produkt ist nicht verfügbar