FCP170N60 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 600V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 5.2 EUR |
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Technische Details FCP170N60 Fairchild Semiconductor
Description: MOSFET N-CH 600V 22A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V.
Weitere Produktangebote FCP170N60 nach Preis ab 4.76 EUR bis 9.12 EUR
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FCP170N60 | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel SuperFET II MOSFET 600 V, 22 A, 170 mO |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP170N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 22A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP170N60 | Hersteller : ONSEMI |
Description: ONSEMI - FCP170N60 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 766 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP170N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP170N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FCP170N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 227W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
Produkt ist nicht verfügbar |