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FCP170N60

FCP170N60 Fairchild Semiconductor

FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
74+6 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCP170N60 Fairchild Semiconductor

Description: MOSFET N-CH 600V 22A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V.

Weitere Produktangebote FCP170N60 nach Preis ab 4.57 EUR bis 10.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCP170N60 FCP170N60 onsemi / Fairchild FCP170N60-D.pdf MOSFETs N-Channel SuperFET II MOSFET 600 V, 22 A, 170 mO
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.92 EUR
10+4.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP170N60 FCP170N60 onsemi fcp170n60-d.pdf Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.63 EUR
50+5.72 EUR
100+5.25 EUR
500+4.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP170N60 FCP170N60-D.pdf
FCP170N60
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II MOSFET 600 V, 22 A, 170 mO
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.92 EUR
10+4.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCP170N60 fcp170n60-d.pdf
FCP170N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 380 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.63 EUR
50+5.72 EUR
100+5.25 EUR
500+4.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH