| Anzahl | Preis |
|---|---|
| 1+ | 9.13 EUR |
| 25+ | 7.94 EUR |
| 100+ | 6.86 EUR |
| 250+ | 6.34 EUR |
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Technische Details UJ3D1210KSD Qorvo
Description: DIODE SIL CARB 1200V 5A TO2473, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 500pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Current - Reverse Leakage @ Vr: 110 µA @ 1200 V, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote UJ3D1210KSD nach Preis ab 7.74 EUR bis 14.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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UJ3D1210KSD | onsemi |
 SiC Schottky Diodes 1200V/10ASICDIODEDUAL |
auf Bestellung 1070 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D1210KSD | onsemi |
Description: DIODE SIL CARB 1200V 5A TO2473 Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 500pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 110 µA @ 1200 V Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 98 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ3D1210KSD |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/10ASICDIODEDUAL
SiC Schottky Diodes 1200V/10ASICDIODEDUAL
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.73 EUR |
| 10+ | 8.76 EUR |
| 600+ | 8.29 EUR |
| 1200+ | 7.74 EUR |
| UJ3D1210KSD |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 1200V 5A TO2473
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.77 EUR |
| 30+ | 8.71 EUR |