KSD1408YTU ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 448+ | 1.48 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.18 EUR |
| 10000+ | 1.02 EUR |
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Technische Details KSD1408YTU ON Semiconductor
Description: TRANS NPN 80V 4A TO-220F-3, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A, Current - Collector Cutoff (Max): 30µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V, Frequency - Transition: 8MHz, Supplier Device Package: TO-220F-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 25 W.
Weitere Produktangebote KSD1408YTU nach Preis ab 0.94 EUR bis 3.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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KSD1408YTU | Fairchild Semiconductor |
Description: TRANS NPN 80V 4A TO-220F-3Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Frequency - Transition: 8MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
auf Bestellung 12348 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1408YTU | onsemi |
Description: TRANS NPN 80V 4A TO-220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Frequency - Transition: 8MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
auf Bestellung 6197 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1408YTU | onsemi |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1418 Stücke: Lieferzeit 10-14 Tag (e) |
|
| KSD1408YTU |
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Hersteller: Fairchild Semiconductor
Description: TRANS NPN 80V 4A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS NPN 80V 4A TO-220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
auf Bestellung 12348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 1.5 EUR |
| KSD1408YTU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 80V 4A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS NPN 80V 4A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
auf Bestellung 6197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.62 EUR |
| 50+ | 1.74 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| 2000+ | 1.04 EUR |
| 5000+ | 0.94 EUR |
| KSD1408YTU |
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Hersteller: onsemi
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 1418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.67 EUR |
| 10+ | 1.75 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.05 EUR |
| 5000+ | 1.02 EUR |





