| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NCP115AMX300TCG | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; XDFN4; SMD; ±2% Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Type of integrated circuit: voltage regulator Output current: 0.3A |
Produkt ist nicht verfügbar |
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| NCP115AMX330TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: XDFN4 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Type of integrated circuit: voltage regulator Output current: 0.3A |
Produkt ist nicht verfügbar |
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| NCP115ASN120T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V Type of integrated circuit: voltage regulator Output current: 0.3A |
Produkt ist nicht verfügbar |
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| NCP115ASN180T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Type of integrated circuit: voltage regulator Output current: 0.3A |
Produkt ist nicht verfügbar |
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| NCP115ASN250T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; TSOP5; SMD Mounting: SMD Manufacturer series: NCP115 Operating temperature: -40...85°C Number of channels: 1 Case: TSOP5 Input voltage: 1.7...5.5V Tolerance: ±2% Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Type of integrated circuit: voltage regulator Output current: 0.3A |
Produkt ist nicht verfügbar |
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NRVTS245ESFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. off-state voltage: 45V Max. forward impulse current: 50A Application: automotive industry Semiconductor structure: single diode Case: SOD123F |
Produkt ist nicht verfügbar |
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NRVTS245ESFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.65V Load current: 2A Max. load current: 4A Max. off-state voltage: 45V Max. forward impulse current: 50A Application: automotive industry Semiconductor structure: single diode Case: SOD123F |
Produkt ist nicht verfügbar |
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| NRVTS1545EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Load current: 15A Max. load current: 30A Max. off-state voltage: 45V Max. forward impulse current: 210A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
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| NRVB1045MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.75V Load current: 10A Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 150A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
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| NRVB1045MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.75V Load current: 10A Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 150A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
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| NRVTS1245EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Load current: 12A Max. load current: 24A Max. off-state voltage: 45V Max. forward impulse current: 210A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
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| NRVTS1245EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Load current: 12A Max. load current: 24A Max. off-state voltage: 45V Max. forward impulse current: 210A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
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| NRVTS1545EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.6V Load current: 15A Max. load current: 30A Max. off-state voltage: 45V Max. forward impulse current: 210A Application: automotive industry Semiconductor structure: single diode Case: DFN5 |
Produkt ist nicht verfügbar |
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| NRVBB40L45CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.68V Load current: 10A x2 Max. load current: 20A Max. off-state voltage: 45V Max. forward impulse current: 200A Application: automotive industry Semiconductor structure: common cathode; double Case: D2PAK |
Produkt ist nicht verfügbar |
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| NRVTSAF345T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.63V Load current: 3A Max. off-state voltage: 45V Application: automotive industry Semiconductor structure: single diode Case: SMA flat |
Produkt ist nicht verfügbar |
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| HCPL4503SDM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: Gull wing 8 Max. off-state voltage: 5V Number of pins: 8 Operating temperature: -40...100°C Manufacturer series: HCPL4503M Load current: 16mA Max. load current: 50mA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB8N90CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
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FQA8N90C-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| MJD32RLG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
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| MJD32T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
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| NJVMJD32T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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| BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
Produkt ist nicht verfügbar |
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| GRUMMBT3904LT1G | ONSEMI |
Category: Unclassified Description: GRUMMBT3904LT1G |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDC8886 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SuperSOT-6 Polarisation: unipolar Gate charge: 7.4nC On-state resistance: 36mΩ Power dissipation: 1.6W Drain current: 6.5A Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 30V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
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| MC3303DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; SO14; ±1.5÷18VDC,3÷36VDC; reel,tape Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 10mV Slew rate: 0.6V/μs Voltage supply range: ± 1.5...18V DC; 3...36V DC Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad Input offset current: 250nA |
Produkt ist nicht verfügbar |
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TIP31C | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: TO220AB Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
Produkt ist nicht verfügbar |
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BD439G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Current gain: 40...475 Power dissipation: 36W Kind of package: bulk |
Produkt ist nicht verfügbar |
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| MMSD4148 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.4W Capacitance: 4pF Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
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SZNUP2105LT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Kind of package: reel; tape Application: automotive industry Version: ESD |
auf Bestellung 3121 Stücke: Lieferzeit 14-21 Tag (e) |
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| MLISZNUP2105LT1G | ONSEMI |
Category: Unclassified Description: MLISZNUP2105LT1G |
auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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RS1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
Produkt ist nicht verfügbar |
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| RS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NRVHPRS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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RS1D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W Reverse recovery time: 150ns |
auf Bestellung 6740 Stücke: Lieferzeit 14-21 Tag (e) |
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| RS1DFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.8A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |
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NRVTSA3100ET3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.995V Load current: 3A Max. load current: 6A Max. forward impulse current: 50A Max. off-state voltage: 100V Application: automotive industry Semiconductor structure: single diode Case: SMA |
Produkt ist nicht verfügbar |
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| NSVMUN2233T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 7kΩ Quantity in set/package: 3000pcs. Current gain: 80...200 |
Produkt ist nicht verfügbar |
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MC74VHC157DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; VHC; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Technology: CMOS Mounting: SMD Case: SOIC16 Family: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: VHC |
Produkt ist nicht verfügbar |
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| MC74VHC157DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; VHC Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP16 Family: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Manufacturer series: VHC |
Produkt ist nicht verfügbar |
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| NTLUS030N03CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.9A Pulsed drain current: 20A Power dissipation: 1.49W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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LM358N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: THT Number of channels: 2 Case: DIP8 Voltage supply range: ± 1.5...16V DC; 3...32V DC |
Produkt ist nicht verfügbar |
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| DFB2505 | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 25A; Ifsm: 300A Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase Case: TS-6P Kind of package: tube Max. forward voltage: 1.1V Load current: 25A Max. off-state voltage: 50V Max. forward impulse current: 0.3kA |
Produkt ist nicht verfügbar |
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| FDMS0312AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 36W Case: Power56 Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape Gate charge: 31nC On-state resistance: 6.8mΩ Gate-source voltage: ±20V Drain current: 22A Drain-source voltage: 30V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
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| NCV8412ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4 Case: SOT223-4 Mounting: SMD Active logical level: low Kind of output: N-Channel Operating temperature: -40...150°C On-state resistance: 0.145Ω Output current: 5.9A Number of channels: 1 Supply voltage: 12V Kind of integrated circuit: low-side Type of integrated circuit: power switch Application: automotive industry |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDT4N50NZU | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223 Mounting: SMD Case: SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 9.1nC Drain current: 2A Power dissipation: 2W Pulsed drain current: 6A On-state resistance: 3Ω Gate-source voltage: ±25V Drain-source voltage: 500V Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| 74LCX07BQX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C Manufacturer series: LCX Kind of output: open drain Case: QFN14 Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: buffer; non-inverting Operating temperature: -40...85°C Quiescent current: 10µA Supply voltage: 2...5.5V DC Number of channels: 6 Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| MC74LCX07DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX Manufacturer series: LCX Kind of output: open drain Case: TSSOP14 Kind of package: reel; tape Mounting: SMD Kind of integrated circuit: buffer; hex Integrated circuit features: tolerates a voltage of 5V on the inputs Operating temperature: -40...85°C Number of inputs: 1 Supply voltage: 1.5...5.5V DC Number of channels: 6 Technology: CMOS Type of integrated circuit: digital Family: LCX |
Produkt ist nicht verfügbar |
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| MBR0540 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCP360MUTBG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: uDFN6 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
Produkt ist nicht verfügbar |
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| NCP360SNAET1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
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| NCP360SNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Application: USB Input voltage: 1.2...20V Kind of output: transistor Threshold on-voltage: 3V |
Produkt ist nicht verfügbar |
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 |
BAV102 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A Mounting: SMD Capacitance: 5pF Semiconductor structure: single diode Type of diode: switching Reverse recovery time: 50ns Load current: 0.5A Max. forward voltage: 1.25V Power dissipation: 0.5W Max. load current: 0.6A Max. forward impulse current: 4A Max. off-state voltage: 150V Case: SOD80 Kind of package: reel; tape |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFWS3D0P04M8LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -183A Pulsed drain current: -900A Power dissipation: 86W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMFS005P03P8ZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -164A Pulsed drain current: -597A Power dissipation: 104W Case: DFN5 Gate-source voltage: ±25V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS3D0P04M8LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -183A Pulsed drain current: -900A Power dissipation: 86W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTMFS6H801NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS6H801NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 900A Power dissipation: 83W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS6H801NLWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 160A Pulsed drain current: 900A Power dissipation: 83W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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 |
FOD4108 | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us Case: DIP6 Mounting: THT Type of optocoupler: optotriac Kind of output: triac Turn-off time: 52µs Turn-on time: 60µs Number of channels: 1 Insulation voltage: 5kV Slew rate: 10kV/μs Manufacturer series: FOD4108 |
auf Bestellung 935 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGH50T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 150A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 230nC |
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Im Einkaufswagen Stück im Wert von UAH |
| NCP115AMX300TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; XDFN4; SMD; ±2%
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; XDFN4; SMD; ±2%
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP115AMX330TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; XDFN4; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: XDFN4
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP115ASN120T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP115ASN180T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP115ASN250T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; TSOP5; SMD
Mounting: SMD
Manufacturer series: NCP115
Operating temperature: -40...85°C
Number of channels: 1
Case: TSOP5
Input voltage: 1.7...5.5V
Tolerance: ±2%
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Type of integrated circuit: voltage regulator
Output current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS245ESFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: SOD123F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS245ESFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 45V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.65V
Load current: 2A
Max. load current: 4A
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Application: automotive industry
Semiconductor structure: single diode
Case: SOD123F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS1545EMFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB1045MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 150A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 150A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB1045MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 150A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.75V
Load current: 10A
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 150A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NRVTS1245EMFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 12A
Max. load current: 24A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 12A
Max. load current: 24A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS1245EMFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 12A
Max. load current: 24A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 12A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 12A
Max. load current: 24A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS1545EMFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 15A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.6V
Load current: 15A
Max. load current: 30A
Max. off-state voltage: 45V
Max. forward impulse current: 210A
Application: automotive industry
Semiconductor structure: single diode
Case: DFN5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBB40L45CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.68V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 200A
Application: automotive industry
Semiconductor structure: common cathode; double
Case: D2PAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.68V
Load current: 10A x2
Max. load current: 20A
Max. off-state voltage: 45V
Max. forward impulse current: 200A
Application: automotive industry
Semiconductor structure: common cathode; double
Case: D2PAK
Produkt ist nicht verfügbar
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| NRVTSAF345T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 45V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA flat
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.63V
Load current: 3A
Max. off-state voltage: 45V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA flat
Produkt ist nicht verfügbar
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| HCPL4503SDM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 8
Max. off-state voltage: 5V
Number of pins: 8
Operating temperature: -40...100°C
Manufacturer series: HCPL4503M
Load current: 16mA
Max. load current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: Gull wing 8
Max. off-state voltage: 5V
Number of pins: 8
Operating temperature: -40...100°C
Manufacturer series: HCPL4503M
Load current: 16mA
Max. load current: 50mA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.64 EUR |
| FQB8N90CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FQA8N90C-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD32RLG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| MJD32T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD32T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| BAT54S |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
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| GRUMMBT3904LT1G |
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.017 EUR |
| FDC8886 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SuperSOT-6
Polarisation: unipolar
Gate charge: 7.4nC
On-state resistance: 36mΩ
Power dissipation: 1.6W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SuperSOT-6
Polarisation: unipolar
Gate charge: 7.4nC
On-state resistance: 36mΩ
Power dissipation: 1.6W
Drain current: 6.5A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 30V
Technology: PowerTrench®
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| MC3303DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; ±1.5÷18VDC,3÷36VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad
Input offset current: 250nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; ±1.5÷18VDC,3÷36VDC; reel,tape
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad
Input offset current: 250nA
Produkt ist nicht verfügbar
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| TIP31C |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: TO220AB
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
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| BD439G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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| MMSD4148 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 2A; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.4W
Capacitance: 4pF
Features of semiconductor devices: fast switching
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| SZNUP2105LT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
auf Bestellung 3121 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 455+ | 0.16 EUR |
| 549+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 1040+ | 0.069 EUR |
| 1099+ | 0.065 EUR |
| MLISZNUP2105LT1G |
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.077 EUR |
| RS1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RS1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NRVHPRS1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| RS1D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Reverse recovery time: 150ns
auf Bestellung 6740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 239+ | 0.3 EUR |
| 269+ | 0.27 EUR |
| 439+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| 521+ | 0.14 EUR |
| RS1DFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 150ns; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.8A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
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| NRVTSA3100ET3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.995V
Load current: 3A
Max. load current: 6A
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.995V
Load current: 3A
Max. load current: 6A
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA
Produkt ist nicht verfügbar
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| NSVMUN2233T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 7kΩ
Quantity in set/package: 3000pcs.
Current gain: 80...200
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC74VHC157DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; SOIC16; VHC; VHC; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC157DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; CMOS; SMD; TSSOP16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Manufacturer series: VHC
Produkt ist nicht verfügbar
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| NTLUS030N03CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM358N |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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| DFB2505 |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 25A; Ifsm: 300A
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: TS-6P
Kind of package: tube
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 50V
Max. forward impulse current: 0.3kA
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 25A; Ifsm: 300A
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: TS-6P
Kind of package: tube
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 50V
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS0312AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 36W
Case: Power56
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Gate charge: 31nC
On-state resistance: 6.8mΩ
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 30V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV8412ASTT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Active logical level: low
Kind of output: N-Channel
Operating temperature: -40...150°C
On-state resistance: 0.145Ω
Output current: 5.9A
Number of channels: 1
Supply voltage: 12V
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.9A; Ch: 1; N-Channel; SMD; SOT223-4
Case: SOT223-4
Mounting: SMD
Active logical level: low
Kind of output: N-Channel
Operating temperature: -40...150°C
On-state resistance: 0.145Ω
Output current: 5.9A
Number of channels: 1
Supply voltage: 12V
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Application: automotive industry
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.92 EUR |
| FDT4N50NZU |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.1nC
Drain current: 2A
Power dissipation: 2W
Pulsed drain current: 6A
On-state resistance: 3Ω
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; Idm: 6A; 2W; SOT223
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 9.1nC
Drain current: 2A
Power dissipation: 2W
Pulsed drain current: 6A
On-state resistance: 3Ω
Gate-source voltage: ±25V
Drain-source voltage: 500V
Kind of package: reel; tape
Kind of channel: enhancement
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| 74LCX07BQX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C
Manufacturer series: LCX
Kind of output: open drain
Case: QFN14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; SMD; QFN14; LCX; -40÷85°C
Manufacturer series: LCX
Kind of output: open drain
Case: QFN14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Quiescent current: 10µA
Supply voltage: 2...5.5V DC
Number of channels: 6
Type of integrated circuit: digital
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| MC74LCX07DTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; hex
Integrated circuit features: tolerates a voltage of 5V on the inputs
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...5.5V DC
Number of channels: 6
Technology: CMOS
Type of integrated circuit: digital
Family: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; LCX; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: TSSOP14
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: buffer; hex
Integrated circuit features: tolerates a voltage of 5V on the inputs
Operating temperature: -40...85°C
Number of inputs: 1
Supply voltage: 1.5...5.5V DC
Number of channels: 6
Technology: CMOS
Type of integrated circuit: digital
Family: LCX
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| MBR0540 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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| NCP360MUTBG |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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| NCP360SNAET1G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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| NCP360SNT1G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Application: USB
Input voltage: 1.2...20V
Kind of output: transistor
Threshold on-voltage: 3V
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| BAV102 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.5A
Max. forward voltage: 1.25V
Power dissipation: 0.5W
Max. load current: 0.6A
Max. forward impulse current: 4A
Max. off-state voltage: 150V
Case: SOD80
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.5A
Max. forward voltage: 1.25V
Power dissipation: 0.5W
Max. load current: 0.6A
Max. forward impulse current: 4A
Max. off-state voltage: 150V
Case: SOD80
Kind of package: reel; tape
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.76 EUR |
| NVMFWS3D0P04M8LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NTMFS005P03P8ZT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -164A
Pulsed drain current: -597A
Power dissipation: 104W
Case: DFN5
Gate-source voltage: ±25V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -164A; Idm: -597A; 104W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -164A
Pulsed drain current: -597A
Power dissipation: 104W
Case: DFN5
Gate-source voltage: ±25V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NVMFS3D0P04M8LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFN5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| NTMFS6H801NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS6H801NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS6H801NLWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 900A; 83W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 900A
Power dissipation: 83W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FOD4108 |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Type of optocoupler: optotriac
Kind of output: triac
Turn-off time: 52µs
Turn-on time: 60µs
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 10kV/μs
Manufacturer series: FOD4108
Category: Optotriacs
Description: Optotriac; 5kV; triac; DIP6; Ch: 1; FOD4108; 10kV/μs; t(on): 60us
Case: DIP6
Mounting: THT
Type of optocoupler: optotriac
Kind of output: triac
Turn-off time: 52µs
Turn-on time: 60µs
Number of channels: 1
Insulation voltage: 5kV
Slew rate: 10kV/μs
Manufacturer series: FOD4108
auf Bestellung 935 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 24+ | 3.06 EUR |
| 26+ | 2.77 EUR |
| FGH50T65UPD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
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