NTMFS6H801NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.54 EUR |
| 3000+ | 1.51 EUR |
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Technische Details NTMFS6H801NLT1G onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS6H801NLT1G nach Preis ab 1.62 EUR bis 4.77 EUR
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NTMFS6H801NLT1G | Hersteller : onsemi |
MOSFET T8 80V LL SO8FL |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS6H801NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 24A/160A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V |
auf Bestellung 44138 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS6H801NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 862 Stücke: Lieferzeit 21-28 Tag (e) |
