NTMFS6H801NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.83 EUR |
| 3000+ | 1.8 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS6H801NLT1G onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V.
Weitere Produktangebote NTMFS6H801NLT1G nach Preis ab 1.93 EUR bis 5.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTMFS6H801NLT1G | onsemi |
MOSFET T8 80V LL SO8FL |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS6H801NLT1G | onsemi |
Description: MOSFET N-CH 80V 24A/160A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V |
auf Bestellung 44138 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMFS6H801NLT1G |
|
Hersteller: onsemi
MOSFET T8 80V LL SO8FL
MOSFET T8 80V LL SO8FL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.41 EUR |
| 10+ | 3.69 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.49 EUR |
| 1500+ | 2.08 EUR |
| 3000+ | 1.93 EUR |
| NTMFS6H801NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
auf Bestellung 44138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.68 EUR |
| 10+ | 3.69 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.07 EUR |