FGH50T65UPD ON Semiconductor
auf Bestellung 556 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 6.16 EUR |
| 100+ | 5.64 EUR |
| 500+ | 5.14 EUR |
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Technische Details FGH50T65UPD ON Semiconductor
Description: IGBT TRENCH FS 650V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 32ns/160ns, Switching Energy: 2.7mJ (on), 740µJ (off), Test Condition: 400V, 50A, 6Ohm, 15V, Gate Charge: 230 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 340 W.
Weitere Produktangebote FGH50T65UPD nach Preis ab 4.85 EUR bis 11.51 EUR
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FGH50T65UPD | Hersteller : onsemi |
 Description: IGBT TRENCH FS 650V 100A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/160ns Switching Energy: 2.7mJ (on), 740µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 230 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 340 W |
auf Bestellung 3373 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH50T65UPD | Hersteller : onsemi / Fairchild |
IGBTs 650 V 100 A 240 W |
auf Bestellung 101 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH50T65UPD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 340000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH50T65UPD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 100A 340W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FGH50T65UPD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 150A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 230nC |
Produkt ist nicht verfügbar |