Technische Details BD439G ON Semiconductor
Description: TRANS NPN 60V 4A TO-126, Power - Max: 36 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 4 A, Part Status: Active, Supplier Device Package: TO-126, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Weitere Produktangebote BD439G nach Preis ab 0.65 EUR bis 2.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BD439G | ON Semiconductor |
Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-225 Box |
auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
BD439G | onsemi |
Bipolar Transistors - BJT 4A 60V 36W NPN |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
BD439G | onsemi |
Description: TRANS NPN 60V 4A TO-126Power - Max: 36 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4 A Part Status: Active Supplier Device Package: TO-126 Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
auf Bestellung 657 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BD439G |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 181+ | 0.98 EUR |
| 200+ | 0.84 EUR |
| 224+ | 0.73 EUR |
| 500+ | 0.65 EUR |
| BD439G |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT 4A 60V 36W NPN
Bipolar Transistors - BJT 4A 60V 36W NPN
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.83 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.19 EUR |
| BD439G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 60V 4A TO-126
Power - Max: 36 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN 60V 4A TO-126
Power - Max: 36 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
auf Bestellung 657 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.83 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.93 EUR |



