NVTFWS027N10MCLTAG onsemi
Hersteller: onsemiDescription: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.57 EUR |
| 3000+ | 0.55 EUR |
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Produktbewertung abgeben
Technische Details NVTFWS027N10MCLTAG onsemi
Description: PTNG 100V LL U8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Power Dissipation (Max): 3.1W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 8-WDFN (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTFWS027N10MCLTAG nach Preis ab 0.56 EUR bis 2.04 EUR
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NVTFWS027N10MCLTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 7.4A Automotive 8-Pin WDFNW EP T/R |
auf Bestellung 712 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFWS027N10MCLTAG | Hersteller : onsemi |
Description: PTNG 100V LL U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 38µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVTFWS027N10MCLTAG | Hersteller : onsemi |
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm |
auf Bestellung 1333 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS027N10MCLTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFWS027N10MCLTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 7.4A 8-Pin WDFN EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFWS027N10MCLTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 7.4A Automotive 8-Pin WDFNW EP T/R |
Produkt ist nicht verfügbar |
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| NVTFWS027N10MCLTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 119A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVTFWS027N10MCLTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 119A Power dissipation: 23W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |