NTF3055L108T1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 24624 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.88 EUR |
| 2000+ | 0.78 EUR |
| 5000+ | 0.74 EUR |
| 10000+ | 0.69 EUR |
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Technische Details NTF3055L108T1G onsemi
Description: MOSFET N-CH 60V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223 (TO-261), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V.
Weitere Produktangebote NTF3055L108T1G nach Preis ab 0.74 EUR bis 2.08 EUR
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NTF3055L108T1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 (TO-261) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
auf Bestellung 24624 Stücke: Lieferzeit 21-28 Tag (e) |
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NTF3055L108T1G | Hersteller : onsemi |
MOSFET 60V 3A N-Channel |
auf Bestellung 80760 Stücke: Lieferzeit 14-28 Tag (e) |
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NTF3055L108T1G | Hersteller : ONSEMI |
Description: ONSEMI - NTF3055L108T1G - Leistungs-MOSFET, n-Kanal, 60 V, 3 A, 0.12 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.68V euEccn: NLR Verlustleistung: 2.1W Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.12ohm |
auf Bestellung 10571 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF3055L108T1G | Hersteller : ONSEMI |
Description: ONSEMI - NTF3055L108T1G - Leistungs-MOSFET, n-Kanal, 60 V, 3 A, 0.12 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 2.1W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.12ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (14-Jun-2023) |
auf Bestellung 2399 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF3055L108T1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTF3055L108T1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NTF3055L108T1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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NTF3055L108T1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NTF3055L108T1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NTF3055L108T1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NTF3055L108T1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |