FCH070N60E onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.13 EUR |
| 30+ | 8.03 EUR |
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Technische Details FCH070N60E onsemi
Description: MOSFET N-CH 600V 52A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 26A, 10V, Power Dissipation (Max): 481W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 380 V.
Weitere Produktangebote FCH070N60E nach Preis ab 9.26 EUR bis 16.33 EUR
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FCH070N60E | Hersteller : onsemi / Fairchild |
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auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH070N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 52A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH070N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 156A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCH070N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 156A |
Produkt ist nicht verfügbar |