NTMFS010N10GTWG onsemi
Hersteller: onsemi
Description: 100V MVSOA IN PQFN56 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 164µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
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Technische Details NTMFS010N10GTWG onsemi
Description: 100V MVSOA IN PQFN56 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 164µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V.
Weitere Produktangebote NTMFS010N10GTWG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NTMFS010N10GTWG | onsemi |
Description: 100V MVSOA IN PQFN56 PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 4V @ 164µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS010N10GTWG | onsemi |
MOSFETs 100V MVSOA IN PQFN56 PACKAGE |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTMFS010N10GTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 1247A Power dissipation: 75W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 58.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
NTMFS010N10GTWG | ON Semiconductor |
Trans MOSFET N-CH 100V 83A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTMFS010N10GTWG |
|
Hersteller: onsemi
Description: 100V MVSOA IN PQFN56 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 164µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Description: 100V MVSOA IN PQFN56 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 164µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS010N10GTWG |
|
Hersteller: onsemi
MOSFETs 100V MVSOA IN PQFN56 PACKAGE
MOSFETs 100V MVSOA IN PQFN56 PACKAGE
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS010N10GTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS010N10GTWG |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 83A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 100V 83A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH