Produkte > ON SEMICONDUCTOR > NTMFS010N10GTWG
NTMFS010N10GTWG

NTMFS010N10GTWG ON Semiconductor


ntmfs010n10g-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 83A 8-Pin PQFN EP T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details NTMFS010N10GTWG ON Semiconductor

Description: 100V MVSOA IN PQFN56 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 4V @ 164µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V.

Weitere Produktangebote NTMFS010N10GTWG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTMFS010N10GTWG Hersteller : ON Semiconductor ntmfs010n10g-d.pdf Power MOSFET, Single N-Channel
Produkt ist nicht verfügbar
NTMFS010N10GTWG NTMFS010N10GTWG Hersteller : onsemi ntmfs010n10g-d.pdf Description: 100V MVSOA IN PQFN56 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 164µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Produkt ist nicht verfügbar
NTMFS010N10GTWG NTMFS010N10GTWG Hersteller : onsemi ntmfs010n10g-d.pdf Description: 100V MVSOA IN PQFN56 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 164µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Produkt ist nicht verfügbar