NTMFS010N10GTWG onsemi
Hersteller: onsemi
Description: 100V MVSOA IN PQFN56 PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 164µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.9 EUR |
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Technische Details NTMFS010N10GTWG onsemi
Description: 100V MVSOA IN PQFN56 PACKAGE, Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 4V @ 164µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NTMFS010N10GTWG nach Preis ab 2.32 EUR bis 5.76 EUR
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NTMFS010N10GTWG | onsemi |
Description: 100V MVSOA IN PQFN56 PACKAGE Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 164µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 14865 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMFS010N10GTWG |
|
Hersteller: onsemi
Description: 100V MVSOA IN PQFN56 PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 164µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: 100V MVSOA IN PQFN56 PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 58.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 164µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 14865 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.76 EUR |
| 10+ | 3.76 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.32 EUR |