DTA123JET1G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.06 EUR |
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Technische Details DTA123JET1G onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JET1G nach Preis ab 0.03 EUR bis 0.33 EUR
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DTA123JET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 11985 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 11985 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JET1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT PNP |
auf Bestellung 9224 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 4878 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA123JET1G | Hersteller : ON Semiconductor |
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auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTA123JET1G | Hersteller : ONSEMI |
Description: ONSEMI - DTA123JET1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 304333 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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DTA123JET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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DTA123JET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |