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MM74HCT08MX MM74HCT08MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CAD75820&compId=MM74HCT08-D.pdf?ci_sign=eb946ef66d24c0af0f57c506bb389471f092fb86 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
Produkt ist nicht verfügbar
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NLV74HCT08ADTR2G NLV74HCT08ADTR2G ONSEMI Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Produkt ist nicht verfügbar
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NCP4305DDR2G NCP4305DDR2G ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4305DMNTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4305DMTTWG ONSEMI ncp4305-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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KSP10BU KSP10BU ONSEMI ksp10-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
Produkt ist nicht verfügbar
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MJ21196G ONSEMI mj21195-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Produkt ist nicht verfügbar
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NZT7053 NZT7053 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA8183590465C469&compId=NZT7053.pdf?ci_sign=8b7dc1f0798c5d7d1e0e0582531fa386261bac39 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
auf Bestellung 3982 Stücke:
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107+0.67 EUR
122+0.59 EUR
278+0.26 EUR
295+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 107
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NDC7002N NDC7002N ONSEMI pVersion=0046&contRep=ZT&docId=E20E0CF99AC49DF1A303005056AB0C4F&compId=NDC7002N.pdf?ci_sign=700e2757c62f23933ea86ede021e99436a8a3766 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Gate charge: 1nC
Power dissipation: 0.96W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
197+0.36 EUR
217+0.33 EUR
274+0.26 EUR
302+0.24 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 162
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SZBZX84C39LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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NC7SZ18P6X NC7SZ18P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE049100746C0C7&compId=NC7SZ18P6X.pdf?ci_sign=c21da47c7faac7e0a811dc220e5289cdf60939dc Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: demultiplexer
Produkt ist nicht verfügbar
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NL7SZ18MUR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D6600D3&compId=NL7SZ18-D.pdf?ci_sign=63f3afbf012b6202ff5a8ff5106835d4df347d33 Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 3-state; demultiplexer
Technology: CMOS
Produkt ist nicht verfügbar
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MM3Z10VST1G MM3Z10VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 2270 Stücke:
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585+0.12 EUR
1064+0.067 EUR
1678+0.043 EUR
1931+0.037 EUR
2270+0.031 EUR
Mindestbestellmenge: 585
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2N6491G 2N6491G ONSEMI 2n6487-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
auf Bestellung 420 Stücke:
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48+1.52 EUR
60+1.21 EUR
66+1.09 EUR
108+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 48
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2N6487G 2N6487G ONSEMI 2n6487-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 60V
Frequency: 5MHz
Case: TO220AB
Produkt ist nicht verfügbar
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N01S830BAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778C60D5&compId=N01S830HA-D.pdf?ci_sign=dba68c514ec13d53aca0db206b4009300362a47b Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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N01S830BAT22IT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778DA0D5&compId=N01S830HA-D.pdf?ci_sign=dd8af5e72bb0ac9dfb37e587823e63e0e3334dd6 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
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FOD3184SD ONSEMI fod3184-d.pdf Category: Unclassified
Description: FOD3184SD
auf Bestellung 1000 Stücke:
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1000+1.07 EUR
Mindestbestellmenge: 1000
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NVMFS6H818NWFT1G ONSEMI nvmfs6h818n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NTMFS6H818NLT1G ONSEMI ntmfs6h818nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NTMFS6H818NT1G ONSEMI ntmfs6h818n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NLT1G ONSEMI nvmfs6h818nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NLWFT1G ONSEMI nvmfs6h818nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NVMFS6H818NT1G ONSEMI nvmfs6h818n-d.pdf NVMFS6H818N-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MOC207M MOC207M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE082FD3D3A745&compId=MOC207M.pdf?ci_sign=d4d1a34fc9e53c87814dc20cb8134175f7593bdc description Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 642 Stücke:
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75+0.96 EUR
122+0.59 EUR
149+0.48 EUR
157+0.46 EUR
250+0.44 EUR
Mindestbestellmenge: 75
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MOC207R2M MOC207R2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAE3FCD636F9E27&compId=MOC207R2M.pdf?ci_sign=3c26afd90934c9e1d538881daabfa4648e92a72f Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 122 Stücke:
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76+0.94 EUR
106+0.68 EUR
122+0.59 EUR
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MOC205M MOC205M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
auf Bestellung 1252 Stücke:
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103+0.7 EUR
152+0.47 EUR
172+0.42 EUR
236+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 103
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MOC8106M MOC8106M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051520C7&compId=MOC8106M.pdf?ci_sign=0060baf7afefb0d4daba64b3e83be0bab8a42573 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
auf Bestellung 463 Stücke:
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105+0.69 EUR
197+0.36 EUR
219+0.33 EUR
234+0.31 EUR
247+0.29 EUR
Mindestbestellmenge: 105
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MOC206R2M MOC206R2M ONSEMI ONSM-S-A0003167371-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
auf Bestellung 2368 Stücke:
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120+0.6 EUR
158+0.45 EUR
202+0.35 EUR
213+0.34 EUR
500+0.33 EUR
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MOC8204M MOC8204M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051660C7&compId=MOC8204M.pdf?ci_sign=529dc3e6e4b2537127f1f75f83737672837b523f Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
auf Bestellung 706 Stücke:
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57+1.26 EUR
83+0.87 EUR
92+0.78 EUR
100+0.72 EUR
101+0.71 EUR
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MOC211M MOC211M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
auf Bestellung 314 Stücke:
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76+0.94 EUR
138+0.52 EUR
152+0.47 EUR
172+0.42 EUR
182+0.39 EUR
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MOC217M MOC217M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
auf Bestellung 1461 Stücke:
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79+0.92 EUR
139+0.51 EUR
161+0.45 EUR
174+0.41 EUR
Mindestbestellmenge: 79
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MJD340RLG ONSEMI mjd340-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
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SZMMSZ5246BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MMSZ5246ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
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SZMMSZ5246ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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FDN359AN FDN359AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE903C94EADA259&compId=FDN359AN.pdf?ci_sign=a80057f0f9f224c8fd968e6e92eb392f70c0472f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
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FDN359BN ONSEMI fdn359bn-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NTTFS2D1N04HLTWG ONSEMI nttfs2d1n04hl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMSZ5247BT1G MMSZ5247BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5244BT1G MMSZ5244BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5222BT1G MMSZ5222BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5260BT1G MMSZ5260BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5229BT1G MMSZ5229BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5233BT1G MMSZ5233BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5255BT1G MMSZ5255BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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NDP6060 ONSEMI ndp6060-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
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NDP6060L NDP6060L ONSEMI pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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2SK932-24-TB-E 2SK932-24-TB-E ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
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2SK932-23-TB-E 2SK932-23-TB-E ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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FDMS86183 ONSEMI fdms86183-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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NC7ST08P5X-L22057 NC7ST08P5X-L22057 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA49A50010EB840D3&compId=NC7ST08-DTE.PDF?ci_sign=804b41575889a36dac36458ebc20e4234ad76da7 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Mounting: SMD
Operating temperature: -48...85°C
Kind of package: reel; tape
Number of channels: single; 1
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Case: SC88A
Kind of gate: AND
Type of integrated circuit: digital
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FSA2380BQX ONSEMI fsa2380-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
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FDMB3800N ONSEMI FDMB3800N-D.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
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ES1A ES1A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
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FGY75T120SQDN FGY75T120SQDN ONSEMI fgy75t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
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FDP047N08 ONSEMI fdp047n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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BSP50 BSP50 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA820C91918BA469&compId=BSP50.pdf?ci_sign=207a1c75875f070f48edd1c6f3447b167cf5623c description Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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NTB7D3N15MC ONSEMI ntb7d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
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MC33178DR2G MC33178DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C297B7BE4469&compId=MC33178DG.PDF?ci_sign=b020d8e9238dc35a9d15e62d87119eb40d09758d Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 2
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
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228+0.31 EUR
285+0.25 EUR
302+0.24 EUR
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MM74HCT08MX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CAD75820&compId=MM74HCT08-D.pdf?ci_sign=eb946ef66d24c0af0f57c506bb389471f092fb86
MM74HCT08MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
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NLV74HCT08ADTR2G
NLV74HCT08ADTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
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NCP4305DDR2G ncp4305-d.pdf
NCP4305DDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP4305DMNTWG ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP4305DMTTWG ncp4305-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSP10BU ksp10-d.pdf
KSP10BU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJ21196G mj21195-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZT7053 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA8183590465C469&compId=NZT7053.pdf?ci_sign=8b7dc1f0798c5d7d1e0e0582531fa386261bac39
NZT7053
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
auf Bestellung 3982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
122+0.59 EUR
278+0.26 EUR
295+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
NDC7002N pVersion=0046&contRep=ZT&docId=E20E0CF99AC49DF1A303005056AB0C4F&compId=NDC7002N.pdf?ci_sign=700e2757c62f23933ea86ede021e99436a8a3766
NDC7002N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Gate charge: 1nC
Power dissipation: 0.96W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
197+0.36 EUR
217+0.33 EUR
274+0.26 EUR
302+0.24 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C39LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ18P6X pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE049100746C0C7&compId=NC7SZ18P6X.pdf?ci_sign=c21da47c7faac7e0a811dc220e5289cdf60939dc
NC7SZ18P6X
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: demultiplexer
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL7SZ18MUR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D6600D3&compId=NL7SZ18-D.pdf?ci_sign=63f3afbf012b6202ff5a8ff5106835d4df347d33
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 3-state; demultiplexer
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z10VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z10VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1064+0.067 EUR
1678+0.043 EUR
1931+0.037 EUR
2270+0.031 EUR
Mindestbestellmenge: 585
Im Einkaufswagen  Stück im Wert von  UAH
2N6491G description 2n6487-d.pdf
2N6491G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
60+1.21 EUR
66+1.09 EUR
108+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
2N6487G 2n6487-d.pdf
2N6487G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 60V
Frequency: 5MHz
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N01S830BAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778C60D5&compId=N01S830HA-D.pdf?ci_sign=dba68c514ec13d53aca0db206b4009300362a47b
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
N01S830BAT22IT pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D7A778DA0D5&compId=N01S830HA-D.pdf?ci_sign=dd8af5e72bb0ac9dfb37e587823e63e0e3334dd6
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD3184SD fod3184-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FOD3184SD
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.07 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H818NWFT1G nvmfs6h818n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NLT1G ntmfs6h818nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS6H818NT1G ntmfs6h818n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H818NLT1G nvmfs6h818nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H818NT1G nvmfs6h818n-d.pdf NVMFS6H818N-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOC207M description pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE082FD3D3A745&compId=MOC207M.pdf?ci_sign=d4d1a34fc9e53c87814dc20cb8134175f7593bdc
MOC207M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
122+0.59 EUR
149+0.48 EUR
157+0.46 EUR
250+0.44 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
MOC207R2M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAE3FCD636F9E27&compId=MOC207R2M.pdf?ci_sign=3c26afd90934c9e1d538881daabfa4648e92a72f
MOC207R2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
106+0.68 EUR
122+0.59 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
MOC205M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2
MOC205M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
152+0.47 EUR
172+0.42 EUR
236+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
MOC8106M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051520C7&compId=MOC8106M.pdf?ci_sign=0060baf7afefb0d4daba64b3e83be0bab8a42573
MOC8106M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
197+0.36 EUR
219+0.33 EUR
234+0.31 EUR
247+0.29 EUR
Mindestbestellmenge: 105
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MOC206R2M ONSM-S-A0003167371-1.pdf?t.download=true&u=5oefqw
MOC206R2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
auf Bestellung 2368 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
158+0.45 EUR
202+0.35 EUR
213+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
MOC8204M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD3020051660C7&compId=MOC8204M.pdf?ci_sign=529dc3e6e4b2537127f1f75f83737672837b523f
MOC8204M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
83+0.87 EUR
92+0.78 EUR
100+0.72 EUR
101+0.71 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
MOC211M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2
MOC211M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
138+0.52 EUR
152+0.47 EUR
172+0.42 EUR
182+0.39 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
MOC217M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F280C7&compId=MOC205M.pdf?ci_sign=1206127bb1e914374325a78755d08355a4343ec2
MOC217M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
139+0.51 EUR
161+0.45 EUR
174+0.41 EUR
Mindestbestellmenge: 79
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MJD340RLG mjd340-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMSZ5246BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ5246ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Produkt ist nicht verfügbar
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SZMMSZ5246ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D09A2977AE40D8&compId=MMSZ52xxET1G.PDF?ci_sign=84c040bee10027c7fb242f03e947982f604fbc20
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
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FDN359AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE903C94EADA259&compId=FDN359AN.pdf?ci_sign=a80057f0f9f224c8fd968e6e92eb392f70c0472f
FDN359AN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
138+0.52 EUR
182+0.39 EUR
298+0.24 EUR
315+0.23 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
FDN359BN fdn359bn-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTTFS2D1N04HLTWG nttfs2d1n04hl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ5247BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5247BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 5611 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
655+0.11 EUR
1021+0.07 EUR
1573+0.045 EUR
1916+0.037 EUR
2451+0.029 EUR
2539+0.028 EUR
2632+0.027 EUR
3000+0.026 EUR
Mindestbestellmenge: 655
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MMSZ5244BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5244BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
582+0.12 EUR
Mindestbestellmenge: 582
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MMSZ5222BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5222BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2026 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
685+0.1 EUR
782+0.092 EUR
937+0.076 EUR
1078+0.066 EUR
1707+0.042 EUR
1737+0.041 EUR
1806+0.04 EUR
1880+0.038 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5260BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5260BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
226+0.31 EUR
Mindestbestellmenge: 226
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MMSZ5229BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5229BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
587+0.12 EUR
878+0.082 EUR
1078+0.066 EUR
1507+0.047 EUR
1786+0.04 EUR
2243+0.032 EUR
2404+0.03 EUR
Mindestbestellmenge: 587
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MMSZ5233BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5233BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
758+0.094 EUR
1279+0.056 EUR
1793+0.04 EUR
2120+0.034 EUR
Mindestbestellmenge: 455
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MMSZ5255BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5255BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
609+0.12 EUR
794+0.09 EUR
935+0.077 EUR
1812+0.039 EUR
2137+0.033 EUR
2539+0.028 EUR
2689+0.027 EUR
Mindestbestellmenge: 609
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NDP6060 ndp6060-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Produkt ist nicht verfügbar
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NDP6060L pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74
NDP6060L
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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2SK932-24-TB-E pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f
2SK932-24-TB-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
143+0.5 EUR
159+0.45 EUR
199+0.36 EUR
211+0.34 EUR
Mindestbestellmenge: 76
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2SK932-23-TB-E pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EADD29D86DA0CE&compId=2SK932.PDF?ci_sign=b2c186f985a5d8ad798821cf6e9d8f61f6050d3f
2SK932-23-TB-E
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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FDMS86183 fdms86183-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NC7ST08P5X-L22057 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA49A50010EB840D3&compId=NC7ST08-DTE.PDF?ci_sign=804b41575889a36dac36458ebc20e4234ad76da7
NC7ST08P5X-L22057
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Mounting: SMD
Operating temperature: -48...85°C
Kind of package: reel; tape
Number of channels: single; 1
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Case: SC88A
Kind of gate: AND
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.25 EUR
470+0.15 EUR
560+0.13 EUR
680+0.11 EUR
720+0.1 EUR
3000+0.097 EUR
Mindestbestellmenge: 290
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FSA2380BQX fsa2380-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
Produkt ist nicht verfügbar
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FDMB3800N FDMB3800N-D.PDF
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ES1A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9
ES1A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
auf Bestellung 3122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
281+0.25 EUR
350+0.2 EUR
385+0.19 EUR
463+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 186
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FGY75T120SQDN fgy75t120sqdn-d.pdf
FGY75T120SQDN
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.49 EUR
6+12.44 EUR
Mindestbestellmenge: 5
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FDP047N08 fdp047n08-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP50 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA820C91918BA469&compId=BSP50.pdf?ci_sign=207a1c75875f070f48edd1c6f3447b167cf5623c
BSP50
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTB7D3N15MC ntb7d3n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC33178DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C297B7BE4469&compId=MC33178DG.PDF?ci_sign=b020d8e9238dc35a9d15e62d87119eb40d09758d
MC33178DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 2
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
auf Bestellung 1398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
201+0.36 EUR
228+0.31 EUR
285+0.25 EUR
302+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
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