Foto | Bezeichnung | Hersteller | Beschreibung |
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FCMT180N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 139W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FCPF380N65FL1-F154 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NSM4002MR6T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6 Case: SC74-6 Kind of package: reel; tape Collector current: 0.2/0.5A Power dissipation: 0.3W Collector-emitter voltage: 40V Current gain: 100...300 Polarisation: bipolar Frequency: 300MHz Type of transistor: NPN x2 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BD439G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Current gain: 40...475 Power dissipation: 36W Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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74LCX125MTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Case: TSSOP14 Type of integrated circuit: digital Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 10µA Number of channels: 4 Supply voltage: 2...3.6V DC Kind of integrated circuit: buffer; non-inverting Kind of output: 3-state Manufacturer series: LCX |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX125MTC | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Case: TSSOP14 Type of integrated circuit: digital Mounting: SMD Operating temperature: -40...85°C Quiescent current: 10µA Number of channels: 4 Supply voltage: 2...3.6V DC Kind of integrated circuit: buffer; non-inverting Kind of output: 3-state Manufacturer series: LCX |
auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 5738 Stücke: Lieferzeit 14-21 Tag (e) |
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CAT25040VP2I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: SPI Memory organisation: 512x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
CAT25040YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: SPI Memory organisation: 512x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC74LVX125DR2G | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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VESTL431BVDR2G | ONSEMI |
Category: Unclassified Description: VESTL431BVDR2G |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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4N36M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
auf Bestellung 597 Stücke: Lieferzeit 14-21 Tag (e) |
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DFB2060 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 20A; Ifsm: 250A Case: TS-6P Max. off-state voltage: 0.6kV Load current: 20A Max. forward voltage: 1.1V Max. forward impulse current: 250A Kind of package: tube Electrical mounting: THT Leads: flat pin Version: flat Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NLA9306MU3TAG | ONSEMI |
![]() Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: uDFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NLA9306MU3TCG | ONSEMI |
![]() Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: uDFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NLA9306MUQ1TCG | ONSEMI |
![]() Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD Kind of package: reel; tape Type of integrated circuit: digital Case: UQFN8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; SMBus; translator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NLV9306USG | ONSEMI |
![]() Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: digital Case: US8 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 0...5.5V DC Number of channels: 2 Kind of integrated circuit: bidirectional; logic level voltage translator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MURS340T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NSVBC847BLT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MURD320T4G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
GRUBC857CLT1G | ONSEMI |
Category: Unclassified Description: GRUBC857CLT1G |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP025N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 265A Pulsed drain current: 1060A Power dissipation: 395W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTHL025N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTH4L025N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVH4L025N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVMYS025N06CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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RFD16N05LSM9A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 16A Power dissipation: 60W Case: DPAK On-state resistance: 56mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2252 Stücke: Lieferzeit 14-21 Tag (e) |
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RFD3055LESM9A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4715T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Leakage current: 10nA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 36V Manufacturer series: MMSZ4xxT1G |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54CLT3G | ONSEMI |
![]() Description: Diode: Schottky switching Type of diode: Schottky switching |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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BZG03C150G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA Type of diode: Zener Power dissipation: 1.5W Zener voltage: 150V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: BZG03C Leakage current: 1µA |
auf Bestellung 5356 Stücke: Lieferzeit 14-21 Tag (e) |
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BZG03C15G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode; 1uA Type of diode: Zener Power dissipation: 1.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: BZG03C Leakage current: 1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MMSZ5226B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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LM78L12ACZ | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NVBLS4D0N15MC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W Type of transistor: N-MOSFET Kind of channel: enhancement Case: H-PSOF8L Kind of package: reel; tape Mounting: SMD Gate charge: 90.4nC On-state resistance: 4.4mΩ Power dissipation: 158W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 187A Pulsed drain current: 900A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM211DR2G | ONSEMI |
![]() Description: IC: comparator; Cmp: 1; 5÷30V; SMT; SO8; reel,tape; Iio: 1.7nA Type of integrated circuit: comparator Operating voltage: 5...30V Mounting: SMT Case: SO8 Operating temperature: -25...85°C Input offset voltage: 3mV Input bias current: 45nA Kind of package: reel; tape Input offset current: 1.7nA Number of comparators: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC78M15BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NSR0320MW2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.5V Load current: 1A Max. off-state voltage: 23V Case: SOD323 Kind of package: reel; tape |
auf Bestellung 21862 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVR0320MW2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 5A Max. off-state voltage: 20V Case: SOD323 Application: automotive industry Kind of package: reel; tape |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR0320MW2T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.5V Load current: 1A Max. forward impulse current: 5A Max. off-state voltage: 23V Case: SOD323 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC33039DR2G | ONSEMI |
![]() Description: IC: driver; brushless motor controller; SO8; 5.5÷9VDC Type of integrated circuit: driver Kind of integrated circuit: brushless motor controller Case: SO8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 5.5...9V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SZBZX84C12LT3G | ONSEMI |
![]() Description: Diode: Zener Type of diode: Zener |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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MARSZBZX84C12LT1G | ONSEMI |
Category: Unclassified Description: MARSZBZX84C12LT1G |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVBA160NT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.51V Max. forward impulse current: 60A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
RSL10-SENSE-DB-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
RSL10-SENSE-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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H11AV1AM | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Mounting: THT Kind of output: transistor Turn-off time: 15µs Turn-on time: 15µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100-300%@10mA Insulation voltage: 4.17kV Case: DIP6 Type of optocoupler: optocoupler |
auf Bestellung 1667 Stücke: Lieferzeit 14-21 Tag (e) |
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H11AV1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Mounting: THT Kind of output: transistor Turn-off time: 15µs Turn-on time: 15µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100-300%@10mA Insulation voltage: 4.17kV Case: DIP6 Type of optocoupler: optocoupler |
auf Bestellung 694 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC4051DR2G | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF4392 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: -30V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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KSP10TA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92 Case: TO92 Mounting: THT Kind of package: Ammo Pack Type of transistor: NPN Kind of transistor: RF Power dissipation: 0.35W Collector-emitter voltage: 25V Current gain: 60 Frequency: 650MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NCV8164AMTW110TAG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.3A; WDFNW6; SMD Case: WDFNW6 Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Output current: 0.3A Number of channels: 1 Output voltage: 1.1V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCV8187AMT110TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1.2A; WDFN6; SMD Case: WDFN6 Mounting: SMD Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Output current: 1.2A Number of channels: 1 Output voltage: 1.1V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N4936G | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4936RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTB190N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 50A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FCP190N65F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVB190N65S3F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 60A Power dissipation: 162W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FCH190N65F-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FCP190N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
FCMT180N65S3 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCPF380N65FL1-F154 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSM4002MR6T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Collector current: 0.2/0.5A
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Collector current: 0.2/0.5A
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD439G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74LCX125MTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Case: TSSOP14
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Case: TSSOP14
Type of integrated circuit: digital
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: LCX
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
182+ | 0.39 EUR |
194+ | 0.37 EUR |
212+ | 0.34 EUR |
222+ | 0.32 EUR |
269+ | 0.27 EUR |
286+ | 0.25 EUR |
74LCX125MTC |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Case: TSSOP14
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Case: TSSOP14
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 10µA
Number of channels: 4
Supply voltage: 2...3.6V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: LCX
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
186+ | 0.38 EUR |
203+ | 0.35 EUR |
216+ | 0.33 EUR |
242+ | 0.3 EUR |
256+ | 0.28 EUR |
BC847BWT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5738 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1060+ | 0.067 EUR |
1250+ | 0.057 EUR |
1352+ | 0.053 EUR |
1725+ | 0.041 EUR |
1954+ | 0.037 EUR |
2348+ | 0.03 EUR |
2763+ | 0.026 EUR |
4238+ | 0.017 EUR |
4505+ | 0.016 EUR |
CAT25040VP2I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: SPI
Memory organisation: 512x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: SPI
Memory organisation: 512x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT25040YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: SPI
Memory organisation: 512x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: SPI
Memory organisation: 512x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LVX125DR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.16 EUR |
VESTL431BVDR2G |
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.25 EUR |
4N36M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 597 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
205+ | 0.35 EUR |
253+ | 0.28 EUR |
271+ | 0.26 EUR |
286+ | 0.25 EUR |
500+ | 0.24 EUR |
DFB2060 |
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Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.6kV
Load current: 20A
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Kind of package: tube
Electrical mounting: THT
Leads: flat pin
Version: flat
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.6kV
Load current: 20A
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Kind of package: tube
Electrical mounting: THT
Leads: flat pin
Version: flat
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLA9306MU3TAG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLA9306MU3TCG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: uDFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLA9306MUQ1TCG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Category: Level translators
Description: IC: digital; bidirectional,SMBus,translator; Ch: 2; 5.5VDC; SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Case: UQFN8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; SMBus; translator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLV9306USG |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
Category: Level translators
Description: IC: digital; bidirectional,logic level voltage translator; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: digital
Case: US8
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 0...5.5V DC
Number of channels: 2
Kind of integrated circuit: bidirectional; logic level voltage translator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MURS340T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBC847BLT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MURD320T4G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GRUBC857CLT1G |
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.022 EUR |
FDP025N06 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTHL025N065SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTH4L025N065SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVH4L025N065SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
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NVMYS025N06CLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RFD16N05LSM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 60W
Case: DPAK
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 60W
Case: DPAK
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2252 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
51+ | 1.42 EUR |
63+ | 1.15 EUR |
70+ | 1.03 EUR |
85+ | 0.85 EUR |
90+ | 0.8 EUR |
100+ | 0.77 EUR |
RFD3055LESM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
117+ | 0.61 EUR |
127+ | 0.57 EUR |
139+ | 0.51 EUR |
144+ | 0.5 EUR |
152+ | 0.47 EUR |
MMSZ4715T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Leakage current: 10nA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 36V
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Leakage current: 10nA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 36V
Manufacturer series: MMSZ4xxT1G
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
282+ | 0.26 EUR |
BAT54CLT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.02 EUR |
BZG03C150G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
auf Bestellung 5356 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
269+ | 0.27 EUR |
338+ | 0.21 EUR |
391+ | 0.18 EUR |
414+ | 0.17 EUR |
BZG03C15G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: BZG03C
Leakage current: 1µA
Produkt ist nicht verfügbar
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MMSZ5226B |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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Stück im Wert von UAH
LM78L12ACZ |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
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NVBLS4D0N15MC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Case: H-PSOF8L
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Case: H-PSOF8L
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Polarisation: unipolar
Produkt ist nicht verfügbar
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LM211DR2G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 5÷30V; SMT; SO8; reel,tape; Iio: 1.7nA
Type of integrated circuit: comparator
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Input bias current: 45nA
Kind of package: reel; tape
Input offset current: 1.7nA
Number of comparators: 1
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 5÷30V; SMT; SO8; reel,tape; Iio: 1.7nA
Type of integrated circuit: comparator
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Input bias current: 45nA
Kind of package: reel; tape
Input offset current: 1.7nA
Number of comparators: 1
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MC78M15BDTRKG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSR0320MW2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Load current: 1A
Max. off-state voltage: 23V
Case: SOD323
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Load current: 1A
Max. off-state voltage: 23V
Case: SOD323
Kind of package: reel; tape
auf Bestellung 21862 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
455+ | 0.16 EUR |
743+ | 0.096 EUR |
905+ | 0.079 EUR |
1534+ | 0.047 EUR |
1624+ | 0.044 EUR |
6000+ | 0.042 EUR |
NSVR0320MW2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 5A
Max. off-state voltage: 20V
Case: SOD323
Application: automotive industry
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 5A
Max. off-state voltage: 20V
Case: SOD323
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
217+ | 0.33 EUR |
277+ | 0.26 EUR |
309+ | 0.23 EUR |
500+ | 0.14 EUR |
NSR0320MW2T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 5A
Max. off-state voltage: 23V
Case: SOD323
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Load current: 1A
Max. forward impulse current: 5A
Max. off-state voltage: 23V
Case: SOD323
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC33039DR2G |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 5.5÷9VDC
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5.5...9V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 5.5÷9VDC
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 5.5...9V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZBZX84C12LT3G |
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auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.027 EUR |
MARSZBZX84C12LT1G |
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.022 EUR |
NRVBA160NT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RSL10-SENSE-DB-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RSL10-SENSE-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
H11AV1AM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Mounting: THT
Kind of output: transistor
Turn-off time: 15µs
Turn-on time: 15µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Mounting: THT
Kind of output: transistor
Turn-off time: 15µs
Turn-on time: 15µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
153+ | 0.47 EUR |
170+ | 0.42 EUR |
187+ | 0.38 EUR |
H11AV1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Mounting: THT
Kind of output: transistor
Turn-off time: 15µs
Turn-on time: 15µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Mounting: THT
Kind of output: transistor
Turn-off time: 15µs
Turn-on time: 15µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 694 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
112+ | 0.64 EUR |
129+ | 0.56 EUR |
138+ | 0.52 EUR |
MC74VHC4051DR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.25 EUR |
MMBF4392 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.35W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KSP10TA |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8164AMTW110TAG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.3A; WDFNW6; SMD
Case: WDFNW6
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output current: 0.3A
Number of channels: 1
Output voltage: 1.1V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 0.3A; WDFNW6; SMD
Case: WDFNW6
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output current: 0.3A
Number of channels: 1
Output voltage: 1.1V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8187AMT110TAG |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1.2A; WDFN6; SMD
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 1.1V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1.2A; WDFN6; SMD
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Output current: 1.2A
Number of channels: 1
Output voltage: 1.1V
Application: automotive industry
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1N4936G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
440+ | 0.16 EUR |
1N4936RLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
447+ | 0.16 EUR |
506+ | 0.14 EUR |
763+ | 0.094 EUR |
1188+ | 0.06 EUR |
1257+ | 0.057 EUR |
2000+ | 0.055 EUR |
NTB190N65S3HF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCP190N65F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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NVB190N65S3F |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 162W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH190N65F-F155 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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FCP190N65S3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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