Foto | Bezeichnung | Hersteller | Beschreibung |
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MM74HCT08MX | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: HCT Delay time: 12ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NLV74HCT08ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP4305DDR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: SO8 Operating temperature: -40...125°C Mounting: SMD Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NCP4305DMNTWG | ONSEMI |
![]() Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: DFN8 Operating temperature: -40...125°C Mounting: SMD Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCP4305DMTTWG | ONSEMI |
![]() Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: WDFN8 Operating temperature: -40...125°C Mounting: SMD Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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KSP10BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.35W Case: TO92 Current gain: 60 Mounting: THT Kind of package: bulk Frequency: 650MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
MJ21196G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NZT7053 | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Kind of transistor: Darlington Case: SOT223 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Collector current: 1.5A Collector-emitter voltage: 100V Frequency: 200MHz Polarisation: bipolar |
auf Bestellung 3982 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7002N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6 Kind of channel: enhancement Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.51A Gate charge: 1nC Power dissipation: 0.96W On-state resistance: 4Ω Gate-source voltage: ±20V Case: SuperSOT-6 |
auf Bestellung 3274 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C39LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 39V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NC7SZ18P6X | ONSEMI |
![]() Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: SC70 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of integrated circuit: demultiplexer |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NL7SZ18MUR2G | ONSEMI |
![]() Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6 Type of integrated circuit: digital Mounting: SMD Number of channels: 2 Case: uDFN6 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Kind of integrated circuit: 3-state; demultiplexer Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM3Z10VST1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
auf Bestellung 2270 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6491G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB Mounting: THT Type of transistor: PNP Kind of package: tube Collector current: 15A Power dissipation: 75W Polarisation: bipolar Current gain: 20...150 Collector-emitter voltage: 80V Frequency: 5MHz Case: TO220AB |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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2N6487G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB Mounting: THT Type of transistor: NPN Kind of package: tube Collector current: 15A Power dissipation: 75W Polarisation: bipolar Current gain: 20...150 Collector-emitter voltage: 60V Frequency: 5MHz Case: TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
N01S830BAT22I | ONSEMI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
N01S830BAT22IT | ONSEMI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FOD3184SD | ONSEMI |
![]() Description: FOD3184SD |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H818NWFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 68W Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 900A Gate charge: 46nC Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTMFS6H818NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 70W Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Gate charge: 64nC Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTMFS6H818NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 68W Drain-source voltage: 80V Drain current: 123A Pulsed drain current: 900A Gate charge: 46nC Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVMFS6H818NLT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 140W Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Gate charge: 64nC Case: DFN5 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVMFS6H818NLWFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 140W Drain-source voltage: 80V Drain current: 135A Pulsed drain current: 772A Gate charge: 64nC Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVMFS6H818NT1G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 68W Drain-source voltage: 80V Drain current: 87A Pulsed drain current: 900A Gate charge: 46nC Case: DFN5x6 Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MOC207M | ONSEMI |
![]() ![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 3.2µs Turn-off time: 4.7µs Number of channels: 1 CTR@If: 100-200%@10mA Insulation voltage: 2.5kV |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC207R2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 3.2µs Turn-off time: 4.7µs Number of channels: 1 CTR@If: 100-200%@10mA Insulation voltage: 2.5kV |
auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC205M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 40-80%@10mA Insulation voltage: 2.5kV |
auf Bestellung 1252 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC8106M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Kind of output: transistor Case: DIP6 Mounting: THT Type of optocoupler: optocoupler Turn-on time: 10µs Turn-off time: 10µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 50-150%@10mA Insulation voltage: 4.17kV |
auf Bestellung 463 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC206R2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V Kind of output: transistor Case: SOIC8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 63-125%@10mA Collector-emitter voltage: 30V Insulation voltage: 2.5kV Manufacturer series: MOC206M |
auf Bestellung 2368 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC8204M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA Case: DIP6 Turn-on time: 5µs Turn-off time: 5µs Max. off-state voltage: 6V |
auf Bestellung 706 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC211M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 20%@10mA Insulation voltage: 2.5kV |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC217M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8 Kind of output: transistor Case: SO8 Mounting: SMD Type of optocoupler: optocoupler Turn-on time: 7.5µs Turn-off time: 5.7µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 100%@1mA Insulation voltage: 2.5kV |
auf Bestellung 1461 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD340RLG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Collector current: 0.5A Power dissipation: 15W Current gain: 30...240 Collector-emitter voltage: 300V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SZMMSZ5246BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MMSZ5246ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SZMMSZ5246ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDN359AN | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Gate charge: 7nC Features of semiconductor devices: logic level |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN359BN | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTTFS2D1N04HLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 958A Power dissipation: 83W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 43.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ5247BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 17V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 5611 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5244BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5222BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 2026 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5260BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5229BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 4374 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5233BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 2120 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5255BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 28V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 3295 Stücke: Lieferzeit 14-21 Tag (e) |
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NDP6060 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 25µΩ Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 144A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NDP6060L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 48A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 40mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SK932-24-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 14.5mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Gate current: 10mA Kind of package: reel; tape |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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2SK932-23-TB-E | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
FDMS86183 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Pulsed drain current: 187A Power dissipation: 63W Case: Power56 Gate-source voltage: ±20V On-state resistance: 34.6mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NC7ST08P5X-L22057 | ONSEMI |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C Mounting: SMD Operating temperature: -48...85°C Kind of package: reel; tape Number of channels: single; 1 Number of inputs: 2 Supply voltage: 4.5...5.5V DC Case: SC88A Kind of gate: AND Type of integrated circuit: digital |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FSA2380BQX | ONSEMI |
![]() Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 500nA Number of channels: 2 Supply voltage: 2.7...5V DC Case: DQFN14 Type of integrated circuit: analog switch Kind of output: DP3T |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FDMB3800N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 5.6nC On-state resistance: 61mΩ Power dissipation: 1.6W Drain current: 4.8A Pulsed drain current: 9A Gate-source voltage: ±20V Drain-source voltage: 30V Case: MicroFET Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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ES1A | ONSEMI |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Reverse recovery time: 15ns Leakage current: 0.1mA Load current: 1A Power dissipation: 1.47W Max. forward voltage: 0.92V Max. forward impulse current: 30A Max. off-state voltage: 50V Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Features of semiconductor devices: fast switching Type of diode: rectifying |
auf Bestellung 3122 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY75T120SQDN | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 399nC Kind of package: tube |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP047N08 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 164A Pulsed drain current: 656A Power dissipation: 268W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BSP50 | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NTB7D3N15MC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 53nC On-state resistance: 7.3mΩ Drain current: 101A Pulsed drain current: 488A Gate-source voltage: ±20V Power dissipation: 166W Drain-source voltage: 150V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC33178DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC Type of integrated circuit: operational amplifier Mounting: SMT Case: SO8 Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Number of channels: 2 Slew rate: 2V/μs Bandwidth: 5MHz Kind of package: reel; tape |
auf Bestellung 1398 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HCT08MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: HCT
Delay time: 12ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NLV74HCT08ADTR2G |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -55÷125°C; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP4305DDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP4305DMNTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP4305DMTTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Operating temperature: -40...125°C
Mounting: SMD
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KSP10BU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: bulk
Frequency: 650MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJ21196G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NZT7053 |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Kind of transistor: Darlington
Case: SOT223
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 1.5A
Collector-emitter voltage: 100V
Frequency: 200MHz
Polarisation: bipolar
auf Bestellung 3982 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
122+ | 0.59 EUR |
278+ | 0.26 EUR |
295+ | 0.24 EUR |
2000+ | 0.23 EUR |
NDC7002N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Gate charge: 1nC
Power dissipation: 0.96W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Gate charge: 1nC
Power dissipation: 0.96W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Case: SuperSOT-6
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
197+ | 0.36 EUR |
217+ | 0.33 EUR |
274+ | 0.26 EUR |
302+ | 0.24 EUR |
521+ | 0.14 EUR |
550+ | 0.13 EUR |
SZBZX84C39LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 39V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NC7SZ18P6X |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SC70
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: demultiplexer
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NL7SZ18MUR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 3-state; demultiplexer
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: 3-state; demultiplexer
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM3Z10VST1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1064+ | 0.067 EUR |
1678+ | 0.043 EUR |
1931+ | 0.037 EUR |
2270+ | 0.031 EUR |
2N6491G | ![]() |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: PNP
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 80V
Frequency: 5MHz
Case: TO220AB
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
48+ | 1.52 EUR |
60+ | 1.21 EUR |
66+ | 1.09 EUR |
108+ | 0.66 EUR |
114+ | 0.63 EUR |
2N6487G |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 60V
Frequency: 5MHz
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 15A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Kind of package: tube
Collector current: 15A
Power dissipation: 75W
Polarisation: bipolar
Current gain: 20...150
Collector-emitter voltage: 60V
Frequency: 5MHz
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
N01S830BAT22I |
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Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
N01S830BAT22IT |
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Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FOD3184SD |
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auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.07 EUR |
NVMFS6H818NWFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS6H818NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 70W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS6H818NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 123A; Idm: 900A; 68W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 123A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS6H818NLT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFN5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFN5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS6H818NLWFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 135A; Idm: 772A; 140W; DFNW5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 140W
Drain-source voltage: 80V
Drain current: 135A
Pulsed drain current: 772A
Gate charge: 64nC
Case: DFNW5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVMFS6H818NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5x6
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 68W
Drain-source voltage: 80V
Drain current: 87A
Pulsed drain current: 900A
Gate charge: 46nC
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MOC207M | ![]() |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
122+ | 0.59 EUR |
149+ | 0.48 EUR |
157+ | 0.46 EUR |
250+ | 0.44 EUR |
MOC207R2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 3.2µs
Turn-off time: 4.7µs
Number of channels: 1
CTR@If: 100-200%@10mA
Insulation voltage: 2.5kV
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
106+ | 0.68 EUR |
122+ | 0.59 EUR |
MOC205M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 40-80%@10mA
Insulation voltage: 2.5kV
auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
152+ | 0.47 EUR |
172+ | 0.42 EUR |
236+ | 0.3 EUR |
250+ | 0.29 EUR |
MOC8106M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Kind of output: transistor
Case: DIP6
Mounting: THT
Type of optocoupler: optocoupler
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 50-150%@10mA
Insulation voltage: 4.17kV
auf Bestellung 463 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.69 EUR |
197+ | 0.36 EUR |
219+ | 0.33 EUR |
234+ | 0.31 EUR |
247+ | 0.29 EUR |
MOC206R2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Kind of output: transistor
Case: SOIC8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Manufacturer series: MOC206M
auf Bestellung 2368 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
158+ | 0.45 EUR |
202+ | 0.35 EUR |
213+ | 0.34 EUR |
500+ | 0.33 EUR |
MOC8204M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Case: DIP6
Turn-on time: 5µs
Turn-off time: 5µs
Max. off-state voltage: 6V
auf Bestellung 706 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
83+ | 0.87 EUR |
92+ | 0.78 EUR |
100+ | 0.72 EUR |
101+ | 0.71 EUR |
MOC211M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 20%@10mA
Insulation voltage: 2.5kV
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
138+ | 0.52 EUR |
152+ | 0.47 EUR |
172+ | 0.42 EUR |
182+ | 0.39 EUR |
MOC217M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; SO8
Kind of output: transistor
Case: SO8
Mounting: SMD
Type of optocoupler: optocoupler
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100%@1mA
Insulation voltage: 2.5kV
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
139+ | 0.51 EUR |
161+ | 0.45 EUR |
174+ | 0.41 EUR |
MJD340RLG |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.5A
Power dissipation: 15W
Current gain: 30...240
Collector-emitter voltage: 300V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZMMSZ5246BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5246ET1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZMMSZ5246ET1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDN359AN |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
138+ | 0.52 EUR |
182+ | 0.39 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
FDN359BN |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTTFS2D1N04HLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 958A; 83W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 958A
Power dissipation: 83W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 43.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5247BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 17V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 5611 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
655+ | 0.11 EUR |
1021+ | 0.07 EUR |
1573+ | 0.045 EUR |
1916+ | 0.037 EUR |
2451+ | 0.029 EUR |
2539+ | 0.028 EUR |
2632+ | 0.027 EUR |
3000+ | 0.026 EUR |
MMSZ5244BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
582+ | 0.12 EUR |
MMSZ5222BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2026 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
685+ | 0.1 EUR |
782+ | 0.092 EUR |
937+ | 0.076 EUR |
1078+ | 0.066 EUR |
1707+ | 0.042 EUR |
1737+ | 0.041 EUR |
1806+ | 0.04 EUR |
1880+ | 0.038 EUR |
MMSZ5260BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
226+ | 0.31 EUR |
MMSZ5229BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 4374 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
587+ | 0.12 EUR |
878+ | 0.082 EUR |
1078+ | 0.066 EUR |
1507+ | 0.047 EUR |
1786+ | 0.04 EUR |
2243+ | 0.032 EUR |
2404+ | 0.03 EUR |
MMSZ5233BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
758+ | 0.094 EUR |
1279+ | 0.056 EUR |
1793+ | 0.04 EUR |
2120+ | 0.034 EUR |
MMSZ5255BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 28V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 28V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3295 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
609+ | 0.12 EUR |
794+ | 0.09 EUR |
935+ | 0.077 EUR |
1812+ | 0.039 EUR |
2137+ | 0.033 EUR |
2539+ | 0.028 EUR |
2689+ | 0.027 EUR |
NDP6060 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NDP6060L |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SK932-24-TB-E |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
143+ | 0.5 EUR |
159+ | 0.45 EUR |
199+ | 0.36 EUR |
211+ | 0.34 EUR |
2SK932-23-TB-E |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86183 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Pulsed drain current: 187A
Power dissipation: 63W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 34.6mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NC7ST08P5X-L22057 |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Mounting: SMD
Operating temperature: -48...85°C
Kind of package: reel; tape
Number of channels: single; 1
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Case: SC88A
Kind of gate: AND
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Mounting: SMD
Operating temperature: -48...85°C
Kind of package: reel; tape
Number of channels: single; 1
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Case: SC88A
Kind of gate: AND
Type of integrated circuit: digital
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
290+ | 0.25 EUR |
470+ | 0.15 EUR |
560+ | 0.13 EUR |
680+ | 0.11 EUR |
720+ | 0.1 EUR |
3000+ | 0.097 EUR |
FSA2380BQX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 500nA
Number of channels: 2
Supply voltage: 2.7...5V DC
Case: DQFN14
Type of integrated circuit: analog switch
Kind of output: DP3T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMB3800N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.6nC
On-state resistance: 61mΩ
Power dissipation: 1.6W
Drain current: 4.8A
Pulsed drain current: 9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ES1A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Reverse recovery time: 15ns
Leakage current: 0.1mA
Load current: 1A
Power dissipation: 1.47W
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
auf Bestellung 3122 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
186+ | 0.39 EUR |
281+ | 0.25 EUR |
350+ | 0.2 EUR |
385+ | 0.19 EUR |
463+ | 0.15 EUR |
500+ | 0.14 EUR |
FGY75T120SQDN |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.49 EUR |
6+ | 12.44 EUR |
FDP047N08 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP50 | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 0.8A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTB7D3N15MC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 101A; Idm: 488A; 166W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 7.3mΩ
Drain current: 101A
Pulsed drain current: 488A
Gate-source voltage: ±20V
Power dissipation: 166W
Drain-source voltage: 150V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33178DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 2
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Number of channels: 2
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
auf Bestellung 1398 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
201+ | 0.36 EUR |
228+ | 0.31 EUR |
285+ | 0.25 EUR |
302+ | 0.24 EUR |
1000+ | 0.23 EUR |