| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| BCP53-16T3G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP Type of transistor: PNP |
auf Bestellung 28000 Stücke: Lieferzeit 14-21 Tag (e) |
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| VALSBCP53-16T1G | ONSEMI |
Category: Unclassified Description: VALSBCP53-16T1G |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBTH81LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MMBTA13 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SMMBTA13LT1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MMBTA13LT3G | ONSEMI |
Category: Transistors - Unclassified Description: MMBTA13LT3G |
auf Bestellung 1990000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD024N06CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 85A Power dissipation: 14W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMJS1D4N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 262A Pulsed drain current: 900A Power dissipation: 90W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMYS014N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 185A Power dissipation: 12W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVTFS024N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 112A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVMJST1D4N06CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.49mΩ Mounting: SMD Gate charge: 92.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.73V Load current: 30A Max. off-state voltage: 120V Max. forward impulse current: 0.3kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape Case: DFN5 Mounting: SMD Kind of package: reel; tape Max. load current: 60A Load current: 30A Max. forward impulse current: 0.3kA Semiconductor structure: single diode Max. off-state voltage: 120V Type of diode: Schottky rectifying Max. forward voltage: 0.95V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MMSZ4680T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA Mounting: SMD Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Leakage current: 4µA Power dissipation: 0.5W Zener voltage: 2.2V Tolerance: ±5% Manufacturer series: MMSZ4xxT1G |
auf Bestellung 2929 Stücke: Lieferzeit 14-21 Tag (e) |
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| GRUMC78L05ACDR2G | ONSEMI |
Category: Unclassified Description: GRUMC78L05ACDR2G |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD12N20LTM-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DTA114EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSBA114EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 269mW Case: SOT963 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSBA114EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVBA114EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Application: automotive industry Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVDTA114EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Application: automotive industry Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVDTA114EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Application: automotive industry Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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74ACT541SC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of output: 3-state Manufacturer series: ACT Kind of integrated circuit: buffer; line driver; non-inverting |
auf Bestellung 1539 Stücke: Lieferzeit 14-21 Tag (e) |
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MC100EP05DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube Mounting: SMD Kind of package: tube Case: SO8 Number of channels: single; 1 Operating temperature: -40...85°C Number of inputs: 4 Supply voltage: 3...5.5V DC Kind of gate: AND; multiple-function; NAND Type of integrated circuit: digital |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD3182 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FOD3182SDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Manufacturer series: FOD3182 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 50kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...35V Turn-off time: 60ns Turn-on time: 60ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
auf Bestellung 398 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...25V Turn-off time: 55ns Turn-on time: 75ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FOD3180TV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs Manufacturer series: FOD3180 Kind of output: MOSFET Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Max. off-state voltage: 5V Insulation voltage: 5kV Case: PDIP8 Slew rate: 15kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FOD3120SV | ONSEMI |
Category: Unclassified Description: FOD3120SV |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD3120TSV | ONSEMI |
Category: Optocouplers - Unclassified Description: FOD3120TSV |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD3184SDV | ONSEMI |
Category: Optocouplers - Unclassified Description: FOD3184SDV |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MPSA06RA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GRUBAS40-04LT1G | ONSEMI |
Category: Unclassified Description: GRUBAS40-04LT1G |
auf Bestellung 51000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP662SQ25T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 100mA; SC82AB; SMD Operating temperature: -40...85°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Output voltage: 2.5V Tolerance: ±2% Input voltage: 6V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP662 Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP662SQ27T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 100mA; SC82AB; SMD Operating temperature: -40...85°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Output voltage: 2.7V Tolerance: ±2% Input voltage: 6V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP662 Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP662SQ28T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 100mA; SC82AB; SMD Operating temperature: -40...85°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Output voltage: 2.8V Tolerance: ±2% Input voltage: 6V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP662 Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP662SQ30T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 100mA; SC82AB; SMD Operating temperature: -40...85°C Output current: 0.1A Voltage drop: 0.42V Number of channels: 1 Output voltage: 3V Tolerance: ±2% Input voltage: 6V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP662 Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP662SQ50T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 100mA; SC82AB; SMD Operating temperature: -40...85°C Output current: 0.1A Voltage drop: 0.3V Number of channels: 1 Output voltage: 5V Tolerance: ±2% Input voltage: 6V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP662 Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV662SQ15T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.28A; SC82AB; SMD Kind of package: reel; tape Output current: 0.28A Number of channels: 1 Output voltage: 1.5V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV662SQ27T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.28A; SC82AB; SMD Kind of package: reel; tape Output current: 0.28A Number of channels: 1 Output voltage: 2.7V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV662SQ30T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.28A; SC82AB; SMD Kind of package: reel; tape Output current: 0.28A Number of channels: 1 Output voltage: 3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear Case: SC82AB Mounting: SMD Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Gate charge: 3.6nC On-state resistance: 0.11Ω Power dissipation: 0.73W Drain current: 2.5A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 2965 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Polarisation: unipolar Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Gate charge: 7nC On-state resistance: 0.14Ω Power dissipation: 0.73W Drain current: 1.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
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| FAN7688SJX | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SOP16; reel,tape Type of integrated circuit: PMIC Mounting: SMD Case: SOP16 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LMV324DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: quad Case: TSSOP14 Slew rate: 1V/μs Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Voltage supply range: 2.7...5V DC Input bias current: 1nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LMV324DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: quad Case: SO14 Slew rate: 1V/μs Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Voltage supply range: 2.7...5V DC Input bias current: 1nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCV33079DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 16MHz Mounting: SMT Case: SO14 Slew rate: 7V/μs Operating temperature: -40...85°C Input offset voltage: 3.5mV Voltage supply range: ± 5...18V DC Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 175nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP340MUTBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: uDFN4 On-state resistance: 50mΩ Kind of package: reel; tape Supply voltage: 1.8...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| J111-D26Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 30Ω Kind of package: tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| J111-D74Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 30Ω Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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H11G1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV Case: DIP6 Turn-on time: 5µs Collector-emitter voltage: 100V CTR@If: 100%@10mA Turn-off time: 0.1ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
 |
H11G1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: DIP6 CTR@If: 100%@10mA |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
H11G1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: Gull wing 6 CTR@If: 100%@10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FCMT080N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4 Mounting: SMD Case: TDFN4 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 71nC On-state resistance: 80mΩ Drain current: 38A Drain-source voltage: 650V Power dissipation: 260W Pulsed drain current: 95A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCMT180N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 139W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCPF380N65FL1-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSM4002MR6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6 Case: SC74-6 Kind of package: reel; tape Collector current: 0.2/0.5A Power dissipation: 0.3W Collector-emitter voltage: 40V Current gain: 100...300 Polarisation: bipolar Frequency: 300MHz Type of transistor: NPN x2 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
 |
BD439G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Current gain: 40...475 Power dissipation: 36W Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCP53-16T3G |
|
auf Bestellung 28000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.2 EUR |
| VALSBCP53-16T1G |
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.18 EUR |
| NSVMMBTH81LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA13 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMMBTA13LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA13LT3G |
|
auf Bestellung 1990000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.034 EUR |
| NVMFD024N06CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS024N06CT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMJS1D4N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS014N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS024N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMJST1D4N06CLTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRTS30120MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Load current: 30A
Max. off-state voltage: 120V
Max. forward impulse current: 0.3kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Load current: 30A
Max. off-state voltage: 120V
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS30120MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. load current: 60A
Load current: 30A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Max. off-state voltage: 120V
Type of diode: Schottky rectifying
Max. forward voltage: 0.95V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. load current: 60A
Load current: 30A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Max. off-state voltage: 120V
Type of diode: Schottky rectifying
Max. forward voltage: 0.95V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ4680T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 4µA
Power dissipation: 0.5W
Zener voltage: 2.2V
Tolerance: ±5%
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 4µA
Power dissipation: 0.5W
Zener voltage: 2.2V
Tolerance: ±5%
Manufacturer series: MMSZ4xxT1G
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 610+ | 0.12 EUR |
| 695+ | 0.1 EUR |
| 1244+ | 0.057 EUR |
| 1806+ | 0.04 EUR |
| 1985+ | 0.036 EUR |
| GRUMC78L05ACDR2G |
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.15 EUR |
| FQD12N20LTM-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA114EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA114EDP6T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA114EDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 4000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBA114EDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 4000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTA114EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTA114EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ACT541SC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 57+ | 1.27 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| 1064+ | 0.64 EUR |
| MC100EP05DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Number of channels: single; 1
Operating temperature: -40...85°C
Number of inputs: 4
Supply voltage: 3...5.5V DC
Kind of gate: AND; multiple-function; NAND
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND,NAND,multiple-function; Ch: 1; IN: 4; SMD; SO8; tube
Mounting: SMD
Kind of package: tube
Case: SO8
Number of channels: single; 1
Operating temperature: -40...85°C
Number of inputs: 4
Supply voltage: 3...5.5V DC
Kind of gate: AND; multiple-function; NAND
Type of integrated circuit: digital
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.4 EUR |
| 8+ | 9.82 EUR |
| FOD3182 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: MOSFET; 5kV; DIP8; 50kV/μs
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3182SDV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Manufacturer series: FOD3182
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3150 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
auf Bestellung 398 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 53+ | 1.36 EUR |
| 62+ | 1.16 EUR |
| 66+ | 1.1 EUR |
| 250+ | 1.06 EUR |
| FOD3180 |
|
Hersteller: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...25V
Turn-off time: 55ns
Turn-on time: 75ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180TV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 15kV/μs
Manufacturer series: FOD3180
Kind of output: MOSFET
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 15kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3120SV |
|
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.9 EUR |
| FOD3120TSV |
|
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.92 EUR |
| FOD3184SDV |
|
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1.04 EUR |
| MPSA06RA |
|
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.13 EUR |
| GRUBAS40-04LT1G |
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.032 EUR |
| NCP662SQ25T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP662SQ27T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 2.7V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 2.7V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP662SQ28T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 2.8V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Output voltage: 2.8V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP662SQ30T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.42V
Number of channels: 1
Output voltage: 3V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.42V
Number of channels: 1
Output voltage: 3V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP662SQ50T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.3V
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 100mA; SC82AB; SMD
Operating temperature: -40...85°C
Output current: 0.1A
Voltage drop: 0.3V
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 6V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP662
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV662SQ15T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.28A; SC82AB; SMD
Kind of package: reel; tape
Output current: 0.28A
Number of channels: 1
Output voltage: 1.5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.28A; SC82AB; SMD
Kind of package: reel; tape
Output current: 0.28A
Number of channels: 1
Output voltage: 1.5V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV662SQ27T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.28A; SC82AB; SMD
Kind of package: reel; tape
Output current: 0.28A
Number of channels: 1
Output voltage: 2.7V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.28A; SC82AB; SMD
Kind of package: reel; tape
Output current: 0.28A
Number of channels: 1
Output voltage: 2.7V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV662SQ30T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.28A; SC82AB; SMD
Kind of package: reel; tape
Output current: 0.28A
Number of channels: 1
Output voltage: 3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.28A; SC82AB; SMD
Kind of package: reel; tape
Output current: 0.28A
Number of channels: 1
Output voltage: 3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Case: SC82AB
Mounting: SMD
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR4503NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 3.6nC
On-state resistance: 0.11Ω
Power dissipation: 0.73W
Drain current: 2.5A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 730mW; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 3.6nC
On-state resistance: 0.11Ω
Power dissipation: 0.73W
Drain current: 2.5A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 417+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 556+ | 0.13 EUR |
| 782+ | 0.092 EUR |
| 820+ | 0.087 EUR |
| NVTR4503NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Gate charge: 7nC
On-state resistance: 0.14Ω
Power dissipation: 0.73W
Drain current: 1.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 147+ | 0.49 EUR |
| FAN7688SJX |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOP16
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOP16
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMV324DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Voltage supply range: 2.7...5V DC
Input bias current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Voltage supply range: 2.7...5V DC
Input bias current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMV324DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Voltage supply range: 2.7...5V DC
Input bias current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Voltage supply range: 2.7...5V DC
Input bias current: 1nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV33079DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP340MUTBG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| J111-D26Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
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| J111-D74Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
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| H11G1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
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| H11G1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 100+ | 0.72 EUR |
| 115+ | 0.63 EUR |
| 131+ | 0.55 EUR |
| 139+ | 0.52 EUR |
| H11G1SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
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| FCMT080N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Mounting: SMD
Case: TDFN4
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 71nC
On-state resistance: 80mΩ
Drain current: 38A
Drain-source voltage: 650V
Power dissipation: 260W
Pulsed drain current: 95A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Mounting: SMD
Case: TDFN4
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 71nC
On-state resistance: 80mΩ
Drain current: 38A
Drain-source voltage: 650V
Power dissipation: 260W
Pulsed drain current: 95A
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| FCMT180N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCPF380N65FL1-F154 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| NSM4002MR6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Collector current: 0.2/0.5A
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2/0.5A; 0.3W; SC74-6
Case: SC74-6
Kind of package: reel; tape
Collector current: 0.2/0.5A
Power dissipation: 0.3W
Collector-emitter voltage: 40V
Current gain: 100...300
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN x2
Mounting: SMD
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| BD439G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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