FCH085N80-F155 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.46 EUR |
| 30+ | 16.76 EUR |
| 120+ | 15.71 EUR |
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Technische Details FCH085N80-F155 onsemi
Description: MOSFET N-CH 800V 46A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4.6mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10825 pF @ 100 V.
Weitere Produktangebote FCH085N80-F155 nach Preis ab 16.39 EUR bis 27.53 EUR
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FCH085N80-F155 | Hersteller : onsemi / Fairchild |
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auf Bestellung 394 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCH085N80-F155 | Hersteller : ON Semiconductor |
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auf Bestellung 415 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH085N80-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 46A 3-Pin(3+Tab) TO-247 Tube |
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FCH085N80-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 46A 3-Pin(3+Tab) TO-247 Tube |
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| FCH085N80-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 29A; Idm: 138A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 29A Power dissipation: 446W Case: TO247 Gate-source voltage: ±20V On-state resistance: 67mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 138A Gate charge: 196nC |
Produkt ist nicht verfügbar |