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FFSB2065B ONSEMI ffsb2065b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSB2065BDN-F085 ONSEMI ffsb2065bdn-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
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FFSB3065B ONSEMI ffsb3065b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 73A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD0665B ONSEMI ffsd0665b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 9.1A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 9.1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD0665B-F085 ONSEMI ffsd0665b-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 9.1A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 9.1A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD1065B ONSEMI ffsd1065b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 13.5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 13.5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSM1065B ONSEMI ffsm1065b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 13.5A
Technology: SiC
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 13.5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MMBTA13LT1G MMBTA13LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81680E3F0EE469&compId=MMBTA13LT1G.PDF?ci_sign=d6e08d0938bccd5929d086596ffe7a89cabd7d6e Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 1195 Stücke:
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417+0.17 EUR
527+0.14 EUR
784+0.091 EUR
946+0.076 EUR
1195+0.06 EUR
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MTP3055VL MTP3055VL ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE17BCE324C745&compId=MTP3055VL.pdf?ci_sign=c0937b05086393e3ba70f10efb36132335b28cc4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
Kind of package: tube
Produkt ist nicht verfügbar
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MJD253T4G ONSEMI mjd243-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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NJVMJD253T4G ONSEMI mjd243-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
Produkt ist nicht verfügbar
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74AC32MTC 74AC32MTC ONSEMI 74ACT32-D.PDF FAIRS25842-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...6V DC
auf Bestellung 481 Stücke:
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283+0.25 EUR
353+0.2 EUR
414+0.17 EUR
439+0.16 EUR
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74AC32MTCX 74AC32MTCX ONSEMI 74ACT32-D.PDF Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
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74AC32SCX 74AC32SCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE047DAA6A200C7&compId=74AC32SC.pdf?ci_sign=71f9b6949affe7b4984def07d408da8e11fa6413 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
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MC74AC32DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD4E0D3&compId=MC74AC32-D.pdf?ci_sign=b31a971171383ca3fec4527535d375762963eba7 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC32DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD620D3&compId=MC74AC32-D.pdf?ci_sign=5fe07d9de6249540ff90d4f3610b2c27feaa1170 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
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NTD18N06LT4G ONSEMI ntd18n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDP020N06B-F102 ONSEMI fdp020n06b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 313A
Pulsed drain current: 1252A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 206nC
Kind of package: tube
Kind of channel: enhancement
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NVTFS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS020N06CTAG ONSEMI NVTFS020N06C-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVB110N65S3F ONSEMI nvb110n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
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NVHL110N65S3F ONSEMI nvhl110n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
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NVHL110N65S3HF ONSEMI nvhl110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
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SZMMBZ5V6ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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NVBG015N065SC1 ONSEMI nvbg015n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 103A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 283nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...18V
Pulsed drain current: 442A
Produkt ist nicht verfügbar
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NVMFWD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Drain current: 24A
Drain-source voltage: 60V
Pulsed drain current: 85A
Produkt ist nicht verfügbar
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MMBF4392LT1G MMBF4392LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689B8D28E1CE745&compId=MMBF439xLT1.PDF?ci_sign=ee00da10a1c6654780e2d83851268130cd56277b Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -30V
Drain current: 25mA
Gate current: 50mA
Power dissipation: 0.225W
Drain-source voltage: 30V
On-state resistance: 60Ω
auf Bestellung 2700 Stücke:
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230+0.31 EUR
305+0.23 EUR
345+0.21 EUR
486+0.15 EUR
516+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 162
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BC550CBU ONSEMI BC550-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
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J113 ONSEMI mmbfj113-d.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Type of transistor: N-JFET
Mounting: THT
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 100Ω
Produkt ist nicht verfügbar
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BC858CDXV6T1G ONSEMI bc858cdxv6t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC858CLT3G BC858CLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NSVBC858CLT1G ONSEMI bc856alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MB8S MB8S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD77C3A0DB29E28&compId=MB6S.pdf?ci_sign=010f7b669d2b1548d1b04ea604e8de8109664952 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1069 Stücke:
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142+0.51 EUR
155+0.46 EUR
208+0.34 EUR
376+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 105
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RS1G RS1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB3B076CBCCAF80C7&compId=RS1x.pdf?ci_sign=3d4e89b20994d952e50b49ade03c5e22aeed0c79 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
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MBRD330G MBRD330G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEA522E3EC4259&compId=MBRD320G.PDF?ci_sign=8984c5aff7e74ac8bed1e9172f9dadc953f2c9a9 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 3A; tube
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 3A
Max. forward voltage: 0.625V
Max. load current: 6A
Type of diode: Schottky rectifying
auf Bestellung 1 Stücke:
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1+71.5 EUR
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FDD8896 FDD8896 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEA292F17CBE28&compId=FDD%2CFDU8896.pdf?ci_sign=e5d32e9da7e23b5cc474f425424b98e6ad294062 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 645 Stücke:
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42+1.73 EUR
56+1.28 EUR
98+0.74 EUR
103+0.7 EUR
250+0.67 EUR
Mindestbestellmenge: 42
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FDD8876 FDD8876 ONSEMI FDD%2CFDU8876.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 13mΩ
Power dissipation: 70W
Drain current: 73A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2031 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
70+1.03 EUR
73+0.99 EUR
77+0.93 EUR
1000+0.9 EUR
Mindestbestellmenge: 65
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FDD7N20TM FDD7N20TM ONSEMI fdd7n20tm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2499 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
81+0.89 EUR
143+0.5 EUR
151+0.47 EUR
500+0.46 EUR
Mindestbestellmenge: 60
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MJD42CRLG ONSEMI mjd41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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MJD42CT4G ONSEMI mjd41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD42CRLG ONSEMI mjd41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD42CT4G ONSEMI mjd41c-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NCV333ASN2T1G ONSEMI ncs333-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SOT23-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Produkt ist nicht verfügbar
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NCV333ASQ3T2G ONSEMI ncs333-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SC70-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Produkt ist nicht verfügbar
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VALNRVTSM260EV2T1G ONSEMI Category: Unclassified
Description: VALNRVTSM260EV2T1G
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
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NVBG020N120SC1 ONSEMI nvbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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NVHL020N120SC1 ONSEMI nvhl020n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 267A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 267A
Power dissipation: 267W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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NVH4L020N120SC1 ONSEMI nvh4l020n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71.4A; Idm: 408A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71.4A
Pulsed drain current: 408A
Power dissipation: 250W
Case: TO247-4
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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MC14027BDR2G MC14027BDR2G ONSEMI mc14027b-d.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Produkt ist nicht verfügbar
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CAT24C256WI-G ONSEMI cat24c256-d.pdf description Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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LP2950ACDT-5.0G ONSEMI lp2950-d.pdf description Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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LP2950ACDT-5RKG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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LP2950CDT-3.0RKG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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LP2950CZ-3.0RAG ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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GRUMMBT3904LT1G ONSEMI Category: Unclassified
Description: GRUMMBT3904LT1G
Produkt ist nicht verfügbar
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GRUMMBT3904WT1G ONSEMI Category: Unclassified
Description: GRUMMBT3904WT1G
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.019 EUR
Mindestbestellmenge: 6000
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VESSMMBT3904LT1G ONSEMI Category: Unclassified
Description: VESSMMBT3904LT1G
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.02 EUR
Mindestbestellmenge: 6000
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GRUMC74HC14ADR2G ONSEMI Category: Unclassified
Description: GRUMC74HC14ADR2G
auf Bestellung 122500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.16 EUR
Mindestbestellmenge: 2500
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4N35SR2VM ONSEMI 4n37m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.29 EUR
Mindestbestellmenge: 1000
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NSVMMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Mounting: SMD
Type of transistor: PNP
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Produkt ist nicht verfügbar
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FFSB2065B ffsb2065b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 22.8A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 22.8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSB2065BDN-F085 ffsb2065bdn-f085-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSB3065B ffsb3065b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 73A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD0665B ffsd0665b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 9.1A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 9.1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD0665B-F085 ffsd0665b-f085-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 9.1A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 9.1A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD1065B ffsd1065b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 13.5A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 13.5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSM1065B ffsm1065b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 13.5A
Technology: SiC
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 13.5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MMBTA13LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA81680E3F0EE469&compId=MMBTA13LT1G.PDF?ci_sign=d6e08d0938bccd5929d086596ffe7a89cabd7d6e
MMBTA13LT1G
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 1195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
527+0.14 EUR
784+0.091 EUR
946+0.076 EUR
1195+0.06 EUR
Mindestbestellmenge: 417
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MTP3055VL pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE17BCE324C745&compId=MTP3055VL.pdf?ci_sign=c0937b05086393e3ba70f10efb36132335b28cc4
MTP3055VL
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 48W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 10nC
Kind of package: tube
Produkt ist nicht verfügbar
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MJD253T4G mjd243-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Produkt ist nicht verfügbar
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NJVMJD253T4G mjd243-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 12.5W
Case: DPAK
Current gain: 40...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 40MHz
Application: automotive industry
Produkt ist nicht verfügbar
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74AC32MTC 74ACT32-D.PDF FAIRS25842-1.pdf?t.download=true&u=5oefqw
74AC32MTC
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...6V DC
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
235+0.3 EUR
283+0.25 EUR
353+0.2 EUR
414+0.17 EUR
439+0.16 EUR
Mindestbestellmenge: 235
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74AC32MTCX 74ACT32-D.PDF
74AC32MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
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74AC32SCX pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE047DAA6A200C7&compId=74AC32SC.pdf?ci_sign=71f9b6949affe7b4984def07d408da8e11fa6413
74AC32SCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
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MC74AC32DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD4E0D3&compId=MC74AC32-D.pdf?ci_sign=b31a971171383ca3fec4527535d375762963eba7
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC32DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628B91DD620D3&compId=MC74AC32-D.pdf?ci_sign=5fe07d9de6249540ff90d4f3610b2c27feaa1170
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
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NTD18N06LT4G ntd18n06l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDP020N06B-F102 fdp020n06b-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 313A; Idm: 1252A; 333W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 313A
Pulsed drain current: 1252A
Power dissipation: 333W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 206nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS020N06CTAG NVTFS020N06C-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFWS020N06CTAG NVTFS020N06C-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVB110N65S3F nvb110n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
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NVHL110N65S3F nvhl110n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
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NVHL110N65S3HF nvhl110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Produkt ist nicht verfügbar
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SZMMBZ5V6ALT1G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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NVBG015N065SC1 nvbg015n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 103A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 283nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...18V
Pulsed drain current: 442A
Produkt ist nicht verfügbar
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NVMFWD024N06CT1G nvmfd024n06c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 22.6mΩ
Power dissipation: 14W
Gate-source voltage: ±20V
Drain current: 24A
Drain-source voltage: 60V
Pulsed drain current: 85A
Produkt ist nicht verfügbar
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MMBF4392LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689B8D28E1CE745&compId=MMBF439xLT1.PDF?ci_sign=ee00da10a1c6654780e2d83851268130cd56277b
MMBF4392LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -30V
Drain current: 25mA
Gate current: 50mA
Power dissipation: 0.225W
Drain-source voltage: 30V
On-state resistance: 60Ω
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
230+0.31 EUR
305+0.23 EUR
345+0.21 EUR
486+0.15 EUR
516+0.14 EUR
1500+0.13 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
BC550CBU BC550-D.PDF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Produkt ist nicht verfügbar
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J113 mmbfj113-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 2mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Type of transistor: N-JFET
Mounting: THT
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 100Ω
Produkt ist nicht verfügbar
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BC858CDXV6T1G bc858cdxv6t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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BC858CLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NSVBC858CLT1G bc856alt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MB8S pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD77C3A0DB29E28&compId=MB6S.pdf?ci_sign=010f7b669d2b1548d1b04ea604e8de8109664952
MB8S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 1069 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
142+0.51 EUR
155+0.46 EUR
208+0.34 EUR
376+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
RS1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB3B076CBCCAF80C7&compId=RS1x.pdf?ci_sign=3d4e89b20994d952e50b49ade03c5e22aeed0c79
RS1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Produkt ist nicht verfügbar
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MBRD330G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEA522E3EC4259&compId=MBRD320G.PDF?ci_sign=8984c5aff7e74ac8bed1e9172f9dadc953f2c9a9
MBRD330G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 3A; tube
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 3A
Max. forward voltage: 0.625V
Max. load current: 6A
Type of diode: Schottky rectifying
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDD8896 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECEA292F17CBE28&compId=FDD%2CFDU8896.pdf?ci_sign=e5d32e9da7e23b5cc474f425424b98e6ad294062
FDD8896
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
56+1.28 EUR
98+0.74 EUR
103+0.7 EUR
250+0.67 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
FDD8876 FDD%2CFDU8876.pdf
FDD8876
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 13mΩ
Power dissipation: 70W
Drain current: 73A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2031 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
70+1.03 EUR
73+0.99 EUR
77+0.93 EUR
1000+0.9 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
FDD7N20TM fdd7n20tm-d.pdf
FDD7N20TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
81+0.89 EUR
143+0.5 EUR
151+0.47 EUR
500+0.46 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
MJD42CRLG mjd41c-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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MJD42CT4G mjd41c-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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NJVMJD42CRLG mjd41c-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NJVMJD42CT4G mjd41c-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NCV333ASN2T1G ncs333-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SOT23-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Produkt ist nicht verfügbar
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NCV333ASQ3T2G ncs333-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; SC70-5; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SC70-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: single
Input bias current: 0.2nA
Input offset current: 400pA
Input offset voltage: 30µV
Slew rate: 0.15V/μs
Voltage supply range: 1.8...5.5V DC
Bandwidth: 350kHz
Produkt ist nicht verfügbar
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VALNRVTSM260EV2T1G
Hersteller: ONSEMI
Category: Unclassified
Description: VALNRVTSM260EV2T1G
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NVBG020N120SC1 nvbg020n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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NVHL020N120SC1 nvhl020n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 267A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 267A
Power dissipation: 267W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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NVH4L020N120SC1 nvh4l020n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71.4A; Idm: 408A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71.4A
Pulsed drain current: 408A
Power dissipation: 250W
Case: TO247-4
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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MC14027BDR2G mc14027b-d.pdf
MC14027BDR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Produkt ist nicht verfügbar
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CAT24C256WI-G description cat24c256-d.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory
Type of integrated circuit: EEPROM memory
Produkt ist nicht verfügbar
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LP2950ACDT-5.0G description lp2950-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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LP2950ACDT-5RKG lp2950-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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LP2950CDT-3.0RKG lp2950-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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LP2950CZ-3.0RAG lp2950-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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GRUMMBT3904LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMMBT3904LT1G
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GRUMMBT3904WT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMMBT3904WT1G
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.019 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
VESSMMBT3904LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: VESSMMBT3904LT1G
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.02 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
GRUMC74HC14ADR2G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMC74HC14ADR2G
auf Bestellung 122500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.16 EUR
Mindestbestellmenge: 2500
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4N35SR2VM 4n37m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.29 EUR
Mindestbestellmenge: 1000
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NSVMMBT5087LT1G mmbt5087lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT23; TO236AB
Mounting: SMD
Type of transistor: PNP
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Produkt ist nicht verfügbar
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