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NCP51402MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D07C12B0C740C7&compId=NCP51402.pdf?ci_sign=92f6c13686655bd910fe7a5d5ef37d86d09ebda9 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCP51403MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D09F3A503EE0C7&compId=NCP51403.pdf?ci_sign=1a073962d16e4e6e3ed281d2d9a0ddefa4a85f2a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCV51400MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
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NCV51400MWTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
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FAN251040MNTXG ONSEMI fan251040mn-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
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NCP81140MNTXG ONSEMI ncp81140?pdf= Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
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FDB13AN06A0 FDB13AN06A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDCF668936BE28&compId=FDB13AN06A0.pdf?ci_sign=0382b24b12a43822867ce764f1ed0e10d5eac849 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 761 Stücke:
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41+1.74 EUR
43+1.67 EUR
44+1.63 EUR
Mindestbestellmenge: 41
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NCV8114ASN330T1G ONSEMI ncv8114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MOC8050SR2M ONSEMI MOC8021M-D.PDF Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.32 EUR
Mindestbestellmenge: 1000
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NCV21872DMR2G NCV21872DMR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Operating temperature: -40...125°C
Number of channels: dual
Mounting: SMT
Type of integrated circuit: operational amplifier
Input bias current: 0.4nA
Input offset current: 800pA
Input offset voltage: 0.045mV
Slew rate: 0.1V/μs
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Bandwidth: 270kHz
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
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55+1.3 EUR
89+0.81 EUR
104+0.69 EUR
140+0.51 EUR
148+0.48 EUR
500+0.46 EUR
Mindestbestellmenge: 55
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FGY100T65SCDT ONSEMI fgy100t65scdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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BZX85C18 BZX85C18 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF98A4AF6EF34259&compId=BZX85C10.pdf?ci_sign=9f3e2bc949e480ea4abcb919b4b3dcec4355a522 Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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74AUP1G97FHX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A73500D3&compId=74AUP1G97-D.pdf?ci_sign=16f2d0f20d42c5fa7dab63e65a25846033c95c6e Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
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74AUP1G97L6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A73640D3&compId=74AUP1G97-D.pdf?ci_sign=2b605c3056a7053632e67cd4a96d69b20e48d58b Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
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74AUP1G98L6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A73780D3&compId=74AUP1G98-D.pdf?ci_sign=e1cb47474df6e88982bfc074d7622669ac3ee5ea Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
Manufacturer series: AUP
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FFB2227A FFB2227A ONSEMI fmb2227a-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MBRAF3200T3G ONSEMI mbraf3200t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 100A
Kind of package: reel; tape
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EMX1DXV6T1G ONSEMI emx1dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
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NSVEMX1DXV6T1G ONSEMI emx1dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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EGP30G ONSEMI egp30k-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Reverse recovery time: 50ns
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NC7SP157P6X NC7SP157P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63488711420D3&compId=NC7SP157-D.pdf?ci_sign=ac7636fb0d10beb84d2d3e79cab6f55ccca88ce3 Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic; NC
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Family: NC
Kind of package: reel; tape
Case: SC88
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 3
Manufacturer series: TinyLogic
Technology: CMOS
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
175+0.41 EUR
196+0.37 EUR
214+0.33 EUR
254+0.28 EUR
313+0.23 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 157
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ISL9V3040D3ST ONSEMI ISL9V3040P3-D.PDF Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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ISL9V3040P3 ONSEMI isl9v3040p3-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FDD2582 FDD2582 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE5B3BB618FE28&compId=FDD2582.pdf?ci_sign=e7eb45d50eba94e821cec9701ee59d017938bf0f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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NVMFS5C612NLAFT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NVMFS5C612NLT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
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NVMFS5C612NLWFAFT1G ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1500+3.39 EUR
Mindestbestellmenge: 1500
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NUP4202W1T2G ONSEMI nup4202w1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Kind of package: reel; tape
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NCP3230MNTXG ONSEMI ncp3230-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
Number of channels: 1
Operating voltage: 4.5...20.5V DC
Frequency: 450...550kHz
Topology: buck
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NCP3235MNTXG ONSEMI ncp3235-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15A
Number of channels: 1
Operating voltage: 4.5...23V DC
Frequency: 500...1210kHz
Topology: buck
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NCP81274MNTXG ONSEMI ncp81274-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
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NCP81276MNTXG ONSEMI ncp81276-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
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NCP81611MNTXG ONSEMI ncp81611-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 2.8...20V
Frequency: 250...1200kHz
Topology: buck
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NCP4200MNR2G ONSEMI ncp4200-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.375...1.8V
Number of channels: 1
Input voltage: 1.7...24V
Frequency: 220...850kHz; 0.25...6MHz
Topology: buck
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HUF75344G3 HUF75344G3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E85A2627C55EA&compId=HUF75344G3.pdf?ci_sign=79d5a31b4ae7a24ec68463285d7bf29cbcc77548 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.85 EUR
16+4.6 EUR
21+3.49 EUR
22+3.3 EUR
23+3.25 EUR
30+3.19 EUR
Mindestbestellmenge: 15
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NCP711ASNADJT1G ONSEMI ncp711-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
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NTP360N80S3Z NTP360N80S3Z ONSEMI ntp360n80s3z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
27+2.75 EUR
28+2.59 EUR
Mindestbestellmenge: 17
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FCH060N80-F155 ONSEMI fch060n80_f155-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
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NTD360N80S3Z ONSEMI ntd360n80s3z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.3nC
On-state resistance: 0.3Ω
Drain current: 8.2A
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Power dissipation: 96W
Drain-source voltage: 800V
Kind of channel: enhancement
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NTPF360N80S3Z ONSEMI ntpf360n80s3z-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
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ISL9R1560P2-F085 ONSEMI isl9r1560p-f085-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC
Case: TO220AC
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Application: automotive industry
Type of diode: rectifying
Mounting: THT
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FDMS3669S ONSEMI fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8018 ONSEMI fdms8018-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8333L ONSEMI fdms8333l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
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75+0.96 EUR
82+0.87 EUR
93+0.77 EUR
107+0.67 EUR
114+0.63 EUR
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FDMS8320LDC ONSEMI fdms8320ldc-d.pdf FDMS8320LDC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86103L ONSEMI fdms86103l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86350ET80 ONSEMI fdms86350et80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FPF1504BUCX ONSEMI fpf1504cn-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Case: WLCSP4
Type of integrated circuit: power switch
Version: ESD
Active logical level: high
Integrated circuit features: output discharge
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output current: 1.5A
On-state resistance: 40mΩ
Number of channels: 1
Supply voltage: 1...3.6V DC
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MJ11028G MJ11028G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0747DE9064469&compId=MJ11028G.PDF?ci_sign=534a61d81034875c301163e41abba81b472ba958 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Mounting: THT
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 60V
Case: TO3
Kind of package: in-tray
auf Bestellung 35 Stücke:
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GBU4G GBU4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMT800100DC ONSEMI fdmt800100dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
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NC7SZ125L6X ONSEMI NC7SZ125-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
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5000+0.087 EUR
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NC7SZ125L6X-L22175 ONSEMI nc7sz125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
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5000+0.17 EUR
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BDV64BG BDV64BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD2C2BD2BFC469&compId=BDV64BG.PDF?ci_sign=4c1079444a53a2960458ba8411143278c88fd201 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Collector current: 10A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 97 Stücke:
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29+2.47 EUR
31+2.35 EUR
60+2.29 EUR
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MC78M15CDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ABDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC78M15ACDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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ESD9L5.0ST5G ESD9L5.0ST5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688951430750745&compId=ESD9L5.0ST5G.PDF?ci_sign=0bb65ff49ba4e4569b3466dbe83fcf59f28cd37c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
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295+0.24 EUR
353+0.2 EUR
407+0.18 EUR
712+0.1 EUR
1047+0.068 EUR
1107+0.065 EUR
5000+0.062 EUR
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SD12CT1G SD12CT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE992E36206E7ECB8BF&compId=SD12CT1G.pdf?ci_sign=91effd7a500e5a015e530fde4fdb218c748ce476 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Version: ESD
Kind of package: reel; tape
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114+0.63 EUR
143+0.5 EUR
163+0.44 EUR
274+0.26 EUR
455+0.16 EUR
481+0.15 EUR
3000+0.14 EUR
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NXH020F120MNF1PG ONSEMI nxh020f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NCP51402MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D07C12B0C740C7&compId=NCP51402.pdf?ci_sign=92f6c13686655bd910fe7a5d5ef37d86d09ebda9
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCP51403MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D09F3A503EE0C7&compId=NCP51403.pdf?ci_sign=1a073962d16e4e6e3ed281d2d9a0ddefa4a85f2a
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Case: DFN10
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NCV51400MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
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NCV51400MWTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Kind of integrated circuit: DDR memory termination regulator
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Operating voltage: 0.5...1.8/2.375...5.5V DC
Number of channels: 1
Application: automotive industry; for DDR memories
Case: DFN10
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FAN251040MNTXG fan251040mn-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP81140MNTXG ncp81140?pdf=
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN32; buck; 4÷6.5VDC
Topology: buck
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...100°C
Output current: 850µA
Operating voltage: 4...6.5V DC
Number of channels: 1
Case: QFN32
Frequency: 290...590kHz
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FDB13AN06A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDCF668936BE28&compId=FDB13AN06A0.pdf?ci_sign=0382b24b12a43822867ce764f1ed0e10d5eac849
FDB13AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 761 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
43+1.67 EUR
44+1.63 EUR
Mindestbestellmenge: 41
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NCV8114ASN330T1G ncv8114-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MOC8050SR2M MOC8021M-D.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+0.32 EUR
Mindestbestellmenge: 1000
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NCV21872DMR2G ncs21871-d.pdf
NCV21872DMR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Operating temperature: -40...125°C
Number of channels: dual
Mounting: SMT
Type of integrated circuit: operational amplifier
Input bias current: 0.4nA
Input offset current: 800pA
Input offset voltage: 0.045mV
Slew rate: 0.1V/μs
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Bandwidth: 270kHz
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
89+0.81 EUR
104+0.69 EUR
140+0.51 EUR
148+0.48 EUR
500+0.46 EUR
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FGY100T65SCDT fgy100t65scdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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BZX85C18 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF98A4AF6EF34259&compId=BZX85C10.pdf?ci_sign=9f3e2bc949e480ea4abcb919b4b3dcec4355a522
BZX85C18
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
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74AUP1G97FHX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A73500D3&compId=74AUP1G97-D.pdf?ci_sign=16f2d0f20d42c5fa7dab63e65a25846033c95c6e
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
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74AUP1G97L6X pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A73640D3&compId=74AUP1G97-D.pdf?ci_sign=2b605c3056a7053632e67cd4a96d69b20e48d58b
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Manufacturer series: AUP
Number of channels: 1
Produkt ist nicht verfügbar
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74AUP1G98L6X pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A73780D3&compId=74AUP1G98-D.pdf?ci_sign=e1cb47474df6e88982bfc074d7622669ac3ee5ea
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
Manufacturer series: AUP
Produkt ist nicht verfügbar
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FFB2227A fmb2227a-d.pdf
FFB2227A
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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MBRAF3200T3G mbraf3200t3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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EMX1DXV6T1G emx1dxv6t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVEMX1DXV6T1G emx1dxv6t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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EGP30G egp30k-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; reel,tape; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
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NC7SP157P6X pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63488711420D3&compId=NC7SP157-D.pdf?ci_sign=ac7636fb0d10beb84d2d3e79cab6f55ccca88ce3
NC7SP157P6X
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 1; IN: 3; CMOS; SMD; SC88; TinyLogic; NC
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Family: NC
Kind of package: reel; tape
Case: SC88
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Number of inputs: 3
Manufacturer series: TinyLogic
Technology: CMOS
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
175+0.41 EUR
196+0.37 EUR
214+0.33 EUR
254+0.28 EUR
313+0.23 EUR
610+0.12 EUR
650+0.11 EUR
Mindestbestellmenge: 157
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ISL9V3040D3ST ISL9V3040P3-D.PDF
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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ISL9V3040P3 isl9v3040p3-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; TO220-3; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: TO220-3
Gate-emitter voltage: ±10V
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FDD2582 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE5B3BB618FE28&compId=FDD2582.pdf?ci_sign=e7eb45d50eba94e821cec9701ee59d017938bf0f
FDD2582
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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NVMFS5C612NLAFT1G nvmfs5c612nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C612NLT1G nvmfs5c612nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS5C612NLWFAFT1G nvmfs5c612nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+3.39 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NUP4202W1T2G nup4202w1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SC88; reel,tape
Type of diode: TVS array
Semiconductor structure: bidirectional
Mounting: SMD
Case: SC88
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP3230MNTXG ncp3230-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 30A
Number of channels: 1
Operating voltage: 4.5...20.5V DC
Frequency: 450...550kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP3235MNTXG ncp3235-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15A
Number of channels: 1
Operating voltage: 4.5...23V DC
Frequency: 500...1210kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP81274MNTXG ncp81274-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP81276MNTXG ncp81276-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP81611MNTXG ncp81611-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 2.8...20V
Frequency: 250...1200kHz
Topology: buck
Produkt ist nicht verfügbar
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NCP4200MNR2G ncp4200-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.375...1.8V
Number of channels: 1
Input voltage: 1.7...24V
Frequency: 220...850kHz; 0.25...6MHz
Topology: buck
Produkt ist nicht verfügbar
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HUF75344G3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E85A2627C55EA&compId=HUF75344G3.pdf?ci_sign=79d5a31b4ae7a24ec68463285d7bf29cbcc77548
HUF75344G3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.85 EUR
16+4.6 EUR
21+3.49 EUR
22+3.3 EUR
23+3.25 EUR
30+3.19 EUR
Mindestbestellmenge: 15
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NCP711ASNADJT1G ncp711-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.355V
Output voltage: 1.2...17V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP711
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...18V
Produkt ist nicht verfügbar
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NTP360N80S3Z ntp360n80s3z-d.pdf
NTP360N80S3Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
27+2.75 EUR
28+2.59 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
FCH060N80-F155 fch060n80_f155-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 36.8A; Idm: 174A; 500W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 36.8A
Pulsed drain current: 174A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.27µC
Produkt ist nicht verfügbar
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NTD360N80S3Z ntd360n80s3z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Case: DPAK
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.3nC
On-state resistance: 0.3Ω
Drain current: 8.2A
Gate-source voltage: ±20V
Pulsed drain current: 32.5A
Power dissipation: 96W
Drain-source voltage: 800V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF360N80S3Z ntpf360n80s3z-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 25.3nC
Produkt ist nicht verfügbar
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ISL9R1560P2-F085 isl9r1560p-f085-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC
Case: TO220AC
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Application: automotive industry
Type of diode: rectifying
Mounting: THT
Produkt ist nicht verfügbar
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FDMS3669S fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS8018 fdms8018-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS8333L fdms8333l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
82+0.87 EUR
93+0.77 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8320LDC fdms8320ldc-d.pdf FDMS8320LDC-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86103L fdms86103l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86350ET80 fdms86350et80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FPF1504BUCX fpf1504cn-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Case: WLCSP4
Type of integrated circuit: power switch
Version: ESD
Active logical level: high
Integrated circuit features: output discharge
Kind of output: P-Channel
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Output current: 1.5A
On-state resistance: 40mΩ
Number of channels: 1
Supply voltage: 1...3.6V DC
Produkt ist nicht verfügbar
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MJ11028G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0747DE9064469&compId=MJ11028G.PDF?ci_sign=534a61d81034875c301163e41abba81b472ba958
MJ11028G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 50A; 300W; TO3
Mounting: THT
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Power dissipation: 300W
Collector current: 50A
Collector-emitter voltage: 60V
Case: TO3
Kind of package: in-tray
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.57 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GBU4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4G
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDMT800100DC fdmt800100dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 102A
Pulsed drain current: 989A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 5.39mΩ
Mounting: SMD
Gate charge: 111nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NC7SZ125L6X NC7SZ125-D.PDF
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.087 EUR
Mindestbestellmenge: 5000
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NC7SZ125L6X-L22175 nc7sz125-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.17 EUR
Mindestbestellmenge: 5000
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BDV64BG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD2C2BD2BFC469&compId=BDV64BG.PDF?ci_sign=4c1079444a53a2960458ba8411143278c88fd201
BDV64BG
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Kind of package: tube
Mounting: THT
Case: TO247-3
Power dissipation: 125W
Collector current: 10A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
29+2.47 EUR
31+2.35 EUR
60+2.29 EUR
Mindestbestellmenge: 16
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MC78M15CDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC78M15ABDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC78M15ACDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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ESD9L5.0ST5G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688951430750745&compId=ESD9L5.0ST5G.PDF?ci_sign=0bb65ff49ba4e4569b3466dbe83fcf59f28cd37c
ESD9L5.0ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
auf Bestellung 8858 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
353+0.2 EUR
407+0.18 EUR
712+0.1 EUR
1047+0.068 EUR
1107+0.065 EUR
5000+0.062 EUR
Mindestbestellmenge: 295
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SD12CT1G pVersion=0046&contRep=ZT&docId=005056AB82531EE992E36206E7ECB8BF&compId=SD12CT1G.pdf?ci_sign=91effd7a500e5a015e530fde4fdb218c748ce476
SD12CT1G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 13.3V; 15A; bidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Version: ESD
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
143+0.5 EUR
163+0.44 EUR
274+0.26 EUR
455+0.16 EUR
481+0.15 EUR
3000+0.14 EUR
Mindestbestellmenge: 114
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NXH020F120MNF1PG nxh020f120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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