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NSVEMX1DXV6T1G

NSVEMX1DXV6T1G onsemi

emx1dxv6t1-d.pdf Hersteller: onsemi
Description: TRANS 2NPN 50V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-563
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.19 EUR
8000+0.17 EUR
20000+0.16 EUR
28000+0.15 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVEMX1DXV6T1G onsemi

Description: TRANS 2NPN 50V 100MA SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 180MHz, Supplier Device Package: SOT-563.

Weitere Produktangebote NSVEMX1DXV6T1G nach Preis ab 0.17 EUR bis 0.9 EUR

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NSVEMX1DXV6T1G NSVEMX1DXV6T1G Hersteller : onsemi EMX1DXV6T1-D.PDF Bipolar Transistors - BJT Dual NPN Bipolar Transistor
auf Bestellung 6645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.8 EUR
10+0.49 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
4000+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NSVEMX1DXV6T1G NSVEMX1DXV6T1G Hersteller : onsemi emx1dxv6t1-d.pdf Description: TRANS 2NPN 50V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-563
auf Bestellung 63945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH