| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NCP45750IMN24TWG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; DFN12 Control voltage: 3...24V DC Active logical level: high Output current: 10A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN12 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 7mΩ Mounting: SMD Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NL27WZ17DFT2G-Q | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC70-6 Operating temperature: -55...125°C Kind of output: push-pull Technology: CMOS |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVTYS005N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33 Case: LFPAK33 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V On-state resistance: 5.3mΩ Pulsed drain current: 430A Power dissipation: 38W Gate charge: 25nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BVSS123LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Mounting: SMD Power dissipation: 0.225W Polarisation: unipolar Drain current: 0.17A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 6Ω |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA42 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.24W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVH040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 40mΩ Pulsed drain current: 162.5A Gate charge: 153nC Polarisation: unipolar Drain current: 65A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
NTHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Kind of package: tube On-state resistance: 32mΩ Pulsed drain current: 162.5A Gate charge: 159nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTH4LN040N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4 Type of transistor: N-MOSFET Power dissipation: 379W Case: TO247-4 Mounting: THT Kind of package: tube On-state resistance: 40mΩ Pulsed drain current: 174A Gate charge: 132nC Polarisation: unipolar Drain current: 62A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 40mΩ Pulsed drain current: 162.5A Gate charge: 153nC Polarisation: unipolar Drain current: 65A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Kind of package: tube On-state resistance: 40mΩ Pulsed drain current: 162.5A Gate charge: 157nC Polarisation: unipolar Drain current: 65A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NTHLD040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Kind of package: tube On-state resistance: 32mΩ Pulsed drain current: 162.5A Gate charge: 159nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NVH4L040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Kind of package: tube On-state resistance: 33.8mΩ Pulsed drain current: 162.5A Gate charge: 160nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
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NTHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Power dissipation: 446W Case: TO247 Mounting: THT Kind of package: tube On-state resistance: 40mΩ Pulsed drain current: 162.5A Gate charge: 158nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCP45750IMN24TWG |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; DFN12
Control voltage: 3...24V DC
Active logical level: high
Output current: 10A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; DFN12
Control voltage: 3...24V DC
Active logical level: high
Output current: 10A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NL27WZ17DFT2G-Q |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Technology: CMOS
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| NVTYS005N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33
Case: LFPAK33
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Pulsed drain current: 430A
Power dissipation: 38W
Gate charge: 25nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33
Case: LFPAK33
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Pulsed drain current: 430A
Power dissipation: 38W
Gate charge: 25nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BVSS123LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.17A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 6Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.17A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 6Ω
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBTA42 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVH040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 153nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 153nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL040N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Gate charge: 159nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Gate charge: 159nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4LN040N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 379W
Case: TO247-4
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 174A
Gate charge: 132nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 379W
Case: TO247-4
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 174A
Gate charge: 132nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 153nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 153nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL040N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 157nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 157nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHLD040N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Gate charge: 159nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Gate charge: 159nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVH4L040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 33.8mΩ
Pulsed drain current: 162.5A
Gate charge: 160nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 33.8mΩ
Pulsed drain current: 162.5A
Gate charge: 160nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 158nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 158nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH