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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...150

Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; DFN12
Control voltage: 3...24V DC
Active logical level: high
Output current: 10A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN12
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC

Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Technology: CMOS

Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 89A; Idm: 430A; 38W; LFPAK33
Case: LFPAK33
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Pulsed drain current: 430A
Power dissipation: 38W
Gate charge: 25nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET

Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.17A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 6Ω

Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.24W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.24W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 153nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Gate charge: 159nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 379W
Case: TO247-4
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 174A
Gate charge: 132nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 153nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 157nC
Polarisation: unipolar
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Gate charge: 159nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 33.8mΩ
Pulsed drain current: 162.5A
Gate charge: 160nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Power dissipation: 446W
Case: TO247
Mounting: THT
Kind of package: tube
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Gate charge: 158nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V