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FST3125DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
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FST3125MTCX FST3125MTCX ONSEMI 74fst3125.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 3µA
Produkt ist nicht verfügbar
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NCP110AMX085TBG ONSEMI ncp110-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.85V; 200mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.85V
Output current: 0.2A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP110
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.1...5.5V
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NCP130BMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
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NCP114AMX080TCG ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; uDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Case: uDFN4
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NCP130AMX080TCG ONSEMI ncp130-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
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NCP110AMX080TBG ONSEMI ncp110-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.17 EUR
Mindestbestellmenge: 5000
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MUN5135DW1T1G MUN5135DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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NTBG030N120M3S ONSEMI NTBG030N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 227W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 126nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 188W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 152nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
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NC7SZ373P6X NC7SZ373P6X ONSEMI ONSM-S-A0003585304-1.pdf?t.download=true&u=5oefqw Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: 7SZ
Trigger: level-triggered
auf Bestellung 2722 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
266+0.27 EUR
323+0.22 EUR
424+0.17 EUR
625+0.11 EUR
695+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 193
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MMSD3070 ONSEMI mmsd3070-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123; reel,tape
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOD123
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FDN338P FDN338P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF8C4E96E0DE28&compId=FDN338P.pdf?ci_sign=bb457ed12eae984270616f2c470fdc17c0c2a9cf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5803 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
166+0.43 EUR
220+0.33 EUR
336+0.21 EUR
358+0.2 EUR
3000+0.19 EUR
Mindestbestellmenge: 117
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NTMJS0D7N03CGTWG ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 410A
On-state resistance: 0.65mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 147nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 900A
Mounting: SMD
Case: LFPAK8
Produkt ist nicht verfügbar
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NTB6410ANT4G ONSEMI NTB6410AN-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: SMD
Case: D2PAK
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NTP6410ANG ONSEMI ntb6410an-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: THT
Case: TO220-3
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NCP51145MNTAG NCP51145MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN8
Operating voltage: 1...5.5/4.75...5.5V DC
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NCP51510MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
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NCV51510MNTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
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NTLJF4156NTAG ONSEMI ntljf4156n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 4.6A; Idm: 20A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET + Schottky
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 4.6A
Produkt ist nicht verfügbar
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NTLJS4114NTAG ONSEMI ntljs4114n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 28A; 1.92W; WDFN6
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.92W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 7.8A
Produkt ist nicht verfügbar
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NTLUD4C26NTAG ONSEMI Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6
On-state resistance: 21mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: uDFN6
Drain-source voltage: 30V
Drain current: 5.3A
Produkt ist nicht verfügbar
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NC7WZ04P6X NC7WZ04P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE5C75D3680745&compId=NC7WZ04.pdf?ci_sign=a8b9312ba4172166f3f85291b08110c18da9d35f Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC70-6
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Number of channels: dual; 2
Quiescent current: 10µA
Kind of package: reel; tape
Kind of gate: NOT
Mounting: SMD
Produkt ist nicht verfügbar
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NC7WZ04P6X-L22347 ONSEMI nc7wz04-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5854 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
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1SMA5918BT3G 1SMA5918BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2629 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
216+0.33 EUR
285+0.25 EUR
532+0.13 EUR
Mindestbestellmenge: 162
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SZ1SMA5918BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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MUR1610CTG MUR1610CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 16A
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.15...1.39mm
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SURS8260T3G-VF01 ONSEMI MURS260T3-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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MOC8050M MOC8050M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Case: DIP6
Turn-off time: 95µs
CTR@If: 500%@10mA
Turn-on time: 8.5µs
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RFD16N05SM9A RFD16N05SM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEF75F1BB8E745&compId=RFD16N05SM.pdf?ci_sign=11584988654cc6f71ae7865d85d2e4358f7455d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Mounting: SMD
Drain-source voltage: 50V
Drain current: 16A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -24A
Mounting: SMD
Case: WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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NFVA25012NP2T ONSEMI nfva25012np2t-d.pdf Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+122.06 EUR
Mindestbestellmenge: 24
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MMBZ5252BLT1G MMBZ5252BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Tolerance: ±5%
Leakage current: 0.1µA
Power dissipation: 0.3W
Manufacturer series: MMBZ52xxBLT1G
Zener voltage: 24V
auf Bestellung 5419 Stücke:
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455+0.16 EUR
642+0.11 EUR
1289+0.055 EUR
1985+0.036 EUR
3312+0.022 EUR
3497+0.02 EUR
Mindestbestellmenge: 455
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SM24T1G SM24T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 5A
auf Bestellung 2704 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
379+0.19 EUR
658+0.11 EUR
770+0.093 EUR
820+0.087 EUR
1000+0.086 EUR
Mindestbestellmenge: 250
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NCV431BVDR2G NCV431BVDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Tolerance: ±0.4%
Reference voltage: 2.495V
Application: automotive industry
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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NCP1370BDR2G NCP1370BDR2G ONSEMI ncp1370-d.pdf Category: LED drivers
Description: IC: driver; flyback; LED driver; SO8; 9÷13VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...13V DC
Produkt ist nicht verfügbar
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FCB260N65S3 FCB260N65S3 ONSEMI fcb260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.79 EUR
28+2.62 EUR
29+2.47 EUR
250+2.45 EUR
800+2.37 EUR
Mindestbestellmenge: 19
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FCD260N65S3 ONSEMI fcd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF360N65S3H ONSEMI ntpf360n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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EGP20J ONSEMI egp20k-d.pdf FAIRS45036-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO15
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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NL17SZ125XV5T2G ONSEMI NL17SZ125-D.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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FDBL0150N80 ONSEMI fdbl0150n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 172nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDD850N10L FDD850N10L ONSEMI fdd850n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
67+1.07 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
FDB150N10 ONSEMI fdb150n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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NCP4355CDR2G NCP4355CDR2G ONSEMI ncp4355-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 3.5÷40VDC
Operating temperature: 0...125°C
Case: SO8
Operating voltage: 3.5...40V DC
Type of integrated circuit: PMIC
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
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MC14516BDR2G MC14516BDR2G ONSEMI mc14516b-d.pdf Category: Counters/dividers
Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: binary up/down counter
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Produkt ist nicht verfügbar
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ISL9R3060G2-F085 ONSEMI isl9r3060g2-f085-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
Produkt ist nicht verfügbar
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NCV317MBSTT3G NCV317MBSTT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B782E2EBFFA0CE&compId=LM317M_NCV317M.PDF?ci_sign=80c4a1c4d0f877464feb1b3d5294fd68e0708620 Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Voltage drop: 0.23V
Output voltage: 1.2...37V
Output current: 0.5A
Case: SOT223
Mounting: SMD
Manufacturer series: NCV317M
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Application: automotive industry
Input voltage: 1.2...40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV317MBDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B782E2EBFFA0CE&compId=LM317M_NCV317M.PDF?ci_sign=80c4a1c4d0f877464feb1b3d5294fd68e0708620 Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Voltage drop: 0.23V
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV317M
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Application: automotive industry
Input voltage: 1.2...40V
Produkt ist nicht verfügbar
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Drain-source voltage: 20/-20V
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
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MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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FAN4800AUN ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FAN4800AUM ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FSA2380BQX ONSEMI fsa2380-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Kind of package: reel; tape
Case: DQFN14
Supply voltage: 2.7...5V DC
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: DP3T
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FGD3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FGD3040G2-F085C ONSEMI fgx3040g2-f085c-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FGD3040G2-F085V ONSEMI fgd3040g2-f085v-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FST3125DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
Produkt ist nicht verfügbar
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FST3125MTCX 74fst3125.pdf
FST3125MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; CMOS,TTL; SMD; TSSOP14; 4÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 3µA
Produkt ist nicht verfügbar
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NCP110AMX085TBG ncp110-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.85V; 200mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.85V
Output current: 0.2A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP110
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.1...5.5V
Produkt ist nicht verfügbar
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NCP130BMX080TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
Produkt ist nicht verfügbar
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NCP114AMX080TCG ncp114-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; uDFN4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP114
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Case: uDFN4
Produkt ist nicht verfügbar
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NCP130AMX080TCG ncp130-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...85°C
Voltage drop: 0.15V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 0.8...5.5V
Output current: 0.3A
Output voltage: 0.8V
Manufacturer series: NCP130
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±1.5%
Case: XDFN6
Produkt ist nicht verfügbar
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NCP110AMX080TBG ncp110-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.17 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
MUN5135DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7491EEBC6749&compId=MUN5135DW1.PDF?ci_sign=2947b13475a6c547a8a5f225ab134ad9506666c4
MUN5135DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
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NTBG030N120M3S NTBG030N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 207A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 207A
Power dissipation: 174W
Case: D2PAK-7
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 107nC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Produkt ist nicht verfügbar
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 227W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 126nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Case: TO247-4
Mounting: THT
Type of transistor: IGBT
Power dissipation: 188W
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 152nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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NC7SZ373P6X ONSM-S-A0003585304-1.pdf?t.download=true&u=5oefqw
NC7SZ373P6X
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: 7SZ
Trigger: level-triggered
auf Bestellung 2722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
266+0.27 EUR
323+0.22 EUR
424+0.17 EUR
625+0.11 EUR
695+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 193
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MMSD3070 mmsd3070-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD123; reel,tape
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: SMD
Case: SOD123
Produkt ist nicht verfügbar
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FDN338P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF8C4E96E0DE28&compId=FDN338P.pdf?ci_sign=bb457ed12eae984270616f2c470fdc17c0c2a9cf
FDN338P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
166+0.43 EUR
220+0.33 EUR
336+0.21 EUR
358+0.2 EUR
3000+0.19 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
NTMJS0D7N03CGTWG
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 410A
On-state resistance: 0.65mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 147nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 900A
Mounting: SMD
Case: LFPAK8
Produkt ist nicht verfügbar
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NTB6410ANT4G NTB6410AN-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Kind of package: reel; tape
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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NTP6410ANG ntb6410an-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 188W
Gate charge: 0.12µC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 305A
Mounting: THT
Case: TO220-3
Produkt ist nicht verfügbar
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NCP51145MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a
NCP51145MNTAG
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Operating temperature: max. 150°C
Output voltage: 0.6...2.5V DC
Output current: 1.8A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN8
Operating voltage: 1...5.5/4.75...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51510MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV51510MNTAG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0A3A83F0A80C7&compId=NCP51510.pdf?ci_sign=bd78d6aacab82590dc2c199903058cc847566d40
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Operating temperature: -40...125°C
Output voltage: 0.5...1.5V
Output current: 3A
Type of integrated circuit: PMIC
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Mounting: SMD
Case: DFN10
Operating voltage: 1.1...3.6/2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTLJF4156NTAG ntljf4156n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 4.6A; Idm: 20A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET + Schottky
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 4.6A
Produkt ist nicht verfügbar
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NTLJS4114NTAG ntljs4114n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 28A; 1.92W; WDFN6
On-state resistance: 35mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.92W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.5nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Mounting: SMD
Case: WDFN6
Drain-source voltage: 30V
Drain current: 7.8A
Produkt ist nicht verfügbar
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NTLUD4C26NTAG
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6
On-state resistance: 21mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: uDFN6
Drain-source voltage: 30V
Drain current: 5.3A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7WZ04P6X pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE5C75D3680745&compId=NC7WZ04.pdf?ci_sign=a8b9312ba4172166f3f85291b08110c18da9d35f
NC7WZ04P6X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SC70-6
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Number of channels: dual; 2
Quiescent current: 10µA
Kind of package: reel; tape
Kind of gate: NOT
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7WZ04P6X-L22347 nc7wz04-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5854 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
1SMA5918BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5918BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 2629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
216+0.33 EUR
285+0.25 EUR
532+0.13 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMA5918BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
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MUR1610CTG pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E77CFBC197C469&compId=MUR1610CTG.PDF?ci_sign=a2fe15ddc41e172553a987727bbb91cf41ebe10b
MUR1610CTG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8Ax2; tube; Ifsm: 100A; TO220AB
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 16A
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Kind of package: tube
Type of diode: rectifying
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
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SURS8260T3G-VF01 MURS260T3-D.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOC8050M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72
MOC8050M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 4.17kV; CTR@If: 500%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Case: DIP6
Turn-off time: 95µs
CTR@If: 500%@10mA
Turn-on time: 8.5µs
Produkt ist nicht verfügbar
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RFD16N05SM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEF75F1BB8E745&compId=RFD16N05SM.pdf?ci_sign=11584988654cc6f71ae7865d85d2e4358f7455d0
RFD16N05SM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Mounting: SMD
Drain-source voltage: 50V
Drain current: 16A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 72W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 80nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK
Produkt ist nicht verfügbar
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NTLJS2103PTBG ntljs2103p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -24A
Mounting: SMD
Case: WDFN6
Drain-source voltage: -12V
Drain current: -7.7A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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NFVA25012NP2T nfva25012np2t-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+122.06 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5252BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5252BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Tolerance: ±5%
Leakage current: 0.1µA
Power dissipation: 0.3W
Manufacturer series: MMBZ52xxBLT1G
Zener voltage: 24V
auf Bestellung 5419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
642+0.11 EUR
1289+0.055 EUR
1985+0.036 EUR
3312+0.022 EUR
3497+0.02 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SM24T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
SM24T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.7V; 5A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 5A
auf Bestellung 2704 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
379+0.19 EUR
658+0.11 EUR
770+0.093 EUR
820+0.087 EUR
1000+0.086 EUR
Mindestbestellmenge: 250
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NCV431BVDR2G tl431-d.pdf
NCV431BVDR2G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Tolerance: ±0.4%
Reference voltage: 2.495V
Application: automotive industry
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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NCP1370BDR2G ncp1370-d.pdf
NCP1370BDR2G
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; flyback; LED driver; SO8; 9÷13VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 9...13V DC
Produkt ist nicht verfügbar
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FCB260N65S3 fcb260n65s3-d.pdf
FCB260N65S3
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
28+2.62 EUR
29+2.47 EUR
250+2.45 EUR
800+2.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
FCD260N65S3 fcd260n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF360N65S3H ntpf360n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 28A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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EGP20J egp20k-d.pdf FAIRS45036-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2A; reel,tape; DO15; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO15
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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NL17SZ125XV5T2G NL17SZ125-D.PDF
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: 1
Quiescent current: 10µA
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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FDBL0150N80 fdbl0150n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 172nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDD850N10L fdd850n10l-d.pdf
FDD850N10L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
67+1.07 EUR
85+0.84 EUR
90+0.8 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
FDB150N10 fdb150n10-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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NCP4355CDR2G ncp4355-d.pdf
NCP4355CDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 3.5÷40VDC
Operating temperature: 0...125°C
Case: SO8
Operating voltage: 3.5...40V DC
Type of integrated circuit: PMIC
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
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MC14516BDR2G mc14516b-d.pdf
MC14516BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: binary up/down counter
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
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ISL9R3060G2-F085 isl9r3060g2-f085-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
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NCV317MBSTT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B782E2EBFFA0CE&compId=LM317M_NCV317M.PDF?ci_sign=80c4a1c4d0f877464feb1b3d5294fd68e0708620
NCV317MBSTT3G
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Voltage drop: 0.23V
Output voltage: 1.2...37V
Output current: 0.5A
Case: SOT223
Mounting: SMD
Manufacturer series: NCV317M
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Application: automotive industry
Input voltage: 1.2...40V
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NCV317MBDTRKG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B782E2EBFFA0CE&compId=LM317M_NCV317M.PDF?ci_sign=80c4a1c4d0f877464feb1b3d5294fd68e0708620
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Voltage drop: 0.23V
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV317M
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Application: automotive industry
Input voltage: 1.2...40V
Produkt ist nicht verfügbar
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NTND31225CZTAG ntnd31225cz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Drain-source voltage: 20/-20V
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
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MC33262DR2G mc34262-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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MC33262PG description mc34262-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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FAN4800AUN fan4800cu-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
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FAN4800AUM fan4800cu-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FSA2380BQX fsa2380-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; DQFN14; 2.7÷5VDC; reel,tape; OUT: DP3T
Mounting: SMD
Kind of package: reel; tape
Case: DQFN14
Supply voltage: 2.7...5V DC
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: DP3T
Operating temperature: -40...85°C
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FGD3040G2-F085 fgi3040g2_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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FGD3040G2-F085C fgx3040g2-f085c-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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FGD3040G2-F085V fgd3040g2-f085v-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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