Foto | Bezeichnung | Hersteller | Beschreibung |
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NSBA143EF3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 297mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA143TDXV6T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.5W Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA143TF3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 297mW Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA144EDP6T5G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ Case: SOT963 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 269mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA144EDXV6T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA144TF3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 297mW Current gain: 120...250 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA144WDXV6T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.5W Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSBA144WF3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ Case: SOT1123 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 297mW Current gain: 80...140 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 47kΩ Base-emitter resistor: 22kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD679AS | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: TO126 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LM2594DADJR2G | ONSEMI |
![]() Description: PMIC; DC/DC converter; SO8; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TL331SN4T3G | ONSEMI |
![]() Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TL331SN4T1G | ONSEMI |
![]() Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
TL331VSN4T3G | ONSEMI |
![]() Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
AFGY160T65SPD-B4 | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MPSA56G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HUF75645P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 238nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMJST2D6N08HTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD138G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
PN2222ATFR | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LM337BD2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LM337BTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: TO220AB Mounting: THT Number of channels: 1 Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LM337D2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NXH450B100H4Q2F2PG | ONSEMI |
![]() Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit Application: for UPS; Inverter Technology: SiC Type of semiconductor module: IGBT Electrical mounting: Press-Fit Mechanical mounting: screw Semiconductor structure: SiC diode/transistor Gate-emitter voltage: ±20V Collector current: 450A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FAN7390MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP8 Output current: -4.5...4.5A Number of channels: 2 Supply voltage: 10...22V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 45ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MC33035DWR2G | ONSEMI |
![]() Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC Supply voltage: 0...40V DC Operating temperature: -40...85°C Kind of package: reel; tape Mounting: SMD Case: SO24 Number of channels: 3 Operating voltage: 10...30V DC Kind of integrated circuit: brushless motor controller Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSVBCP53-16T3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Case: SOT223-4; TO261-4 Mounting: SMD Power dissipation: 1.5W Collector current: 1.5A Current gain: 100...250 Collector-emitter voltage: 80V Application: automotive industry Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SZMMSZ4V7T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NVBG025N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 284A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
LM317D2TR4G | ONSEMI |
![]() ![]() Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BC848CDW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MUN5233T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Collector-emitter voltage: 50V Current gain: 200 Collector current: 0.1A |
auf Bestellung 3192 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5233T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 2789 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5235T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 2935 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5232DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A |
auf Bestellung 521 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75545P3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB Type of transistor: N-MOSFET Case: TO220AB Drain-source voltage: 80V Drain current: 73A On-state resistance: 10mΩ Power dissipation: 270W Polarisation: unipolar Kind of package: tube Gate charge: 235nC Technology: UltraFET® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75545S3ST | ONSEMI |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75321P3 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB Mounting: THT Case: TO220AB Drain-source voltage: 55V Drain current: 31A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 93W Polarisation: unipolar Kind of package: tube Gate charge: 44nC Technology: UltraFET® Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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QED234 | ONSEMI |
![]() Description: IR transmitter; 5mm; transparent; 27mW; 40°; 1.6VDC; λp max: 940nm Operating voltage: 1.6V DC LED diameter: 5mm LED lens: transparent LED current: 100mA Viewing angle: 40° Wavelength of peak sensitivity: 940nm Radiant power: 27mW Shape: round Type of diode: IR transmitter Mounting: THT |
auf Bestellung 601 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5922BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
auf Bestellung 2516 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMBTA64LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDN358P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2431 Stücke: Lieferzeit 14-21 Tag (e) |
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NJVMJD127T4G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSVBC850BLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSVBC850CLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SD1048-6-TB-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59 Mounting: SMD Case: SC59 Frequency: 250MHz Collector-emitter voltage: 15V Current gain: 200...400 Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
2SD1048-7-TB-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59 Mounting: SMD Case: SC59 Collector-emitter voltage: 15V Collector current: 0.7A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1060S-1E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 5A; 1.75W; TO220AB Mounting: THT Case: TO220AB Frequency: 30MHz Collector-emitter voltage: 50V Current gain: 140...280 Collector current: 5A Type of transistor: NPN Power dissipation: 1.75W Polarisation: bipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1620-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 10V Current gain: 140 Frequency: 200MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1623S-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V Current gain: 140...280 Frequency: 150MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1623T-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 50V Current gain: 200...400 Frequency: 150MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1624S-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1624T-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SD1628G-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.5W Collector current: 5A Collector-emitter voltage: 20V Current gain: 280...560 Frequency: 120MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
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NCV7808BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
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NCV7808BD2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
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MJD112T4G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MJD112RLG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NJVMJD112G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Application: automotive industry Polarisation: bipolar Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NJVMJD112T4G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Application: automotive industry Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCP110N65F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
NSBA143EF3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
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NSBA143TDXV6T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 4.7kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Produkt ist nicht verfügbar
Im Einkaufswagen
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NSBA143TF3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 4.7kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSBA144EDP6T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 47kΩ
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSBA144EDXV6T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSBA144TF3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 120...250
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSBA144WDXV6T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSBA144WF3T5G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 47kΩ
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 297mW
Current gain: 80...140
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD679AS |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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LM2594DADJR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TL331SN4T3G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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TL331SN4T1G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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TL331VSN4T3G |
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Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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AFGY160T65SPD-B4 |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Produkt ist nicht verfügbar
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MPSA56G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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HUF75645P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 238nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.22 EUR |
24+ | 3.02 EUR |
27+ | 2.65 EUR |
NVMJST2D6N08HTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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BD138G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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PN2222ATFR |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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LM337BD2TR4G |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM337BTG |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM337D2TR4G |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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NXH450B100H4Q2F2PG |
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Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Application: for UPS; Inverter
Technology: SiC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: SiC diode/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 1kV
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Application: for UPS; Inverter
Technology: SiC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit
Mechanical mounting: screw
Semiconductor structure: SiC diode/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FAN7390MX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -4.5...4.5A
Number of channels: 2
Supply voltage: 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -4.5...4.5A
Number of channels: 2
Supply voltage: 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33035DWR2G |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBCP53-16T3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Mounting: SMD
Power dissipation: 1.5W
Collector current: 1.5A
Current gain: 100...250
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Mounting: SMD
Power dissipation: 1.5W
Collector current: 1.5A
Current gain: 100...250
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZMMSZ4V7T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVBG025N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM317D2TR4G | ![]() |
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Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC848CDW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MUN5233T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Current gain: 200
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Current gain: 200
Collector current: 0.1A
auf Bestellung 3192 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
676+ | 0.11 EUR |
782+ | 0.092 EUR |
1257+ | 0.057 EUR |
1548+ | 0.046 EUR |
2305+ | 0.031 EUR |
3192+ | 0.023 EUR |
SMUN5233T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
596+ | 0.12 EUR |
1000+ | 0.072 EUR |
1197+ | 0.06 EUR |
1309+ | 0.055 EUR |
1489+ | 0.048 EUR |
2000+ | 0.036 EUR |
2119+ | 0.034 EUR |
SMUN5235T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
962+ | 0.074 EUR |
1137+ | 0.063 EUR |
1220+ | 0.059 EUR |
1238+ | 0.058 EUR |
1306+ | 0.055 EUR |
MUN5232DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
239+ | 0.3 EUR |
521+ | 0.14 EUR |
HUF75545P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 80V
Drain current: 73A
On-state resistance: 10mΩ
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 235nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 270W; TO220AB
Type of transistor: N-MOSFET
Case: TO220AB
Drain-source voltage: 80V
Drain current: 73A
On-state resistance: 10mΩ
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 235nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
27+ | 2.75 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
50+ | 2.14 EUR |
HUF75545S3ST |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 2.59 EUR |
HUF75321P3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Mounting: THT
Case: TO220AB
Drain-source voltage: 55V
Drain current: 31A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 31A; 93W; TO220AB
Mounting: THT
Case: TO220AB
Drain-source voltage: 55V
Drain current: 31A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Kind of package: tube
Gate charge: 44nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
QED234 |
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Hersteller: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; transparent; 27mW; 40°; 1.6VDC; λp max: 940nm
Operating voltage: 1.6V DC
LED diameter: 5mm
LED lens: transparent
LED current: 100mA
Viewing angle: 40°
Wavelength of peak sensitivity: 940nm
Radiant power: 27mW
Shape: round
Type of diode: IR transmitter
Mounting: THT
Category: IR LEDs
Description: IR transmitter; 5mm; transparent; 27mW; 40°; 1.6VDC; λp max: 940nm
Operating voltage: 1.6V DC
LED diameter: 5mm
LED lens: transparent
LED current: 100mA
Viewing angle: 40°
Wavelength of peak sensitivity: 940nm
Radiant power: 27mW
Shape: round
Type of diode: IR transmitter
Mounting: THT
auf Bestellung 601 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
278+ | 0.26 EUR |
321+ | 0.22 EUR |
353+ | 0.2 EUR |
472+ | 0.15 EUR |
500+ | 0.14 EUR |
1SMB5922BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2516 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
216+ | 0.33 EUR |
241+ | 0.3 EUR |
319+ | 0.22 EUR |
365+ | 0.2 EUR |
477+ | 0.15 EUR |
506+ | 0.14 EUR |
SMMBTA64LT1G |
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Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDN358P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2431 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
136+ | 0.53 EUR |
178+ | 0.4 EUR |
285+ | 0.25 EUR |
300+ | 0.24 EUR |
NJVMJD127T4G |
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Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBC850BLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBC850CLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SD1048-6-TB-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Mounting: SMD
Case: SC59
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 200...400
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Mounting: SMD
Case: SC59
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 200...400
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SD1048-7-TB-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Mounting: SMD
Case: SC59
Collector-emitter voltage: 15V
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.7A; 0.2W; SC59
Mounting: SMD
Case: SC59
Collector-emitter voltage: 15V
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
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2SD1060S-1E |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.75W; TO220AB
Mounting: THT
Case: TO220AB
Frequency: 30MHz
Collector-emitter voltage: 50V
Current gain: 140...280
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.75W; TO220AB
Mounting: THT
Case: TO220AB
Frequency: 30MHz
Collector-emitter voltage: 50V
Current gain: 140...280
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of package: tube
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2SD1620-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Current gain: 140
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 10V; 3A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 10V
Current gain: 140
Frequency: 200MHz
Polarisation: bipolar
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2SD1623S-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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2SD1623T-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
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2SD1624S-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
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2SD1624T-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
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2SD1628G-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 280...560
Frequency: 120MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.5W; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.5W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 280...560
Frequency: 120MHz
Polarisation: bipolar
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NCV7808BDTRKG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV7808BD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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MJD112T4G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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MJD112RLG |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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NJVMJD112G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Application: automotive industry
Polarisation: bipolar
Kind of package: tube
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Application: automotive industry
Polarisation: bipolar
Kind of package: tube
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NJVMJD112T4G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
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FCP110N65F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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