| Anzahl | Preis |
|---|---|
| 1+ | 15.7 EUR |
| 10+ | 8.85 EUR |
| 120+ | 8.48 EUR |
| 2520+ | 8.15 EUR |
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Technische Details HUF75652G3 onsemi / Fairchild
Description: MOSFET N-CH 100V 75A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 515W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote HUF75652G3 nach Preis ab 8.5 EUR bis 16.81 EUR
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HUF75652G3 | Hersteller : onsemi |
 MOSFETs 75a 100VN-Ch MOSFET |
auf Bestellung 753 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75652G3 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 75A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 515W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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| HUF75652G3 | Hersteller : ONS/FAI |
MOSFET N-CH Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |