HUF75652G3 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.04 EUR |
| 19+ | 9.69 EUR |
| 25+ | 9.32 EUR |
| 50+ | 8.96 EUR |
| 100+ | 8.63 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
18 Stücke
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Produktbewertung abgeben
Technische Details HUF75652G3 ON Semiconductor
Description: MOSFET N-CH 100V 75A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V, Power Dissipation (Max): 515W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V.
Weitere Produktangebote HUF75652G3 nach Preis ab 8.63 EUR bis 20 EUR
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HUF75652G3 | ON Semiconductor |
 Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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HUF75652G3 | onsemi |
Description: MOSFET N-CH 100V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 515W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
|
| HUF75652G3 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.27 EUR |
| 25+ | 9.72 EUR |
| 50+ | 9.19 EUR |
| 100+ | 8.63 EUR |
| HUF75652G3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20 EUR |
| 30+ | 11.9 EUR |
| 120+ | 10.12 EUR |