FDD2670
Produktcode: 126745
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Weitere Produktangebote FDD2670 nach Preis ab 1.39 EUR bis 5.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDD2670 | onsemi / Fairchild |
MOSFETs N-CH 200V 18A Q-FET |
auf Bestellung 3068 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD2670 | onsemi |
Description: MOSFET N-CH 200V 3.6A TO252 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel |
auf Bestellung 1133 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD2670 | onsemi |
MOSFETs N-CH 200V 18A Q-FET |
auf Bestellung 3036 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD2670 | fairchild |
to-252/d-pak |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDD2670 |
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Hersteller: onsemi / Fairchild
MOSFETs N-CH 200V 18A Q-FET
MOSFETs N-CH 200V 18A Q-FET
auf Bestellung 3068 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.5 EUR |
| 2500+ | 1.39 EUR |
| FDD2670 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.6A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 200V 3.6A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.88 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.64 EUR |
| FDD2670 |
|
Hersteller: onsemi
MOSFETs N-CH 200V 18A Q-FET
MOSFETs N-CH 200V 18A Q-FET
auf Bestellung 3036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.13 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.63 EUR |
| FDD2670 |
|
Hersteller: fairchild
to-252/d-pak
to-252/d-pak
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)