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FDD2670
Produktcode: 126745
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Weitere Produktangebote FDD2670 nach Preis ab 1.74 EUR bis 5.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDD2670 | ON Semiconductor |
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1813 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD2670 | ON Semiconductor |
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD2670 | onsemi |
MOSFETs N-CH 200V 18A Q-FET |
auf Bestellung 3006 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD2670 | onsemi |
Description: MOSFET N-CH 200V 3.6A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V |
auf Bestellung 1053 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD2670 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1813 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 271+ | 2.46 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 1.98 EUR |
| FDD2670 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 271+ | 2.46 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 1.98 EUR |
| FDD2670 |
|
Hersteller: onsemi
MOSFETs N-CH 200V 18A Q-FET
MOSFETs N-CH 200V 18A Q-FET
auf Bestellung 3006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.45 EUR |
| 10+ | 2.7 EUR |
| 100+ | 2.43 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.87 EUR |
| 2500+ | 1.74 EUR |
| FDD2670 |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Description: MOSFET N-CH 200V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
auf Bestellung 1053 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.62 EUR |
| 10+ | 3.63 EUR |
| 50+ | 2.77 EUR |
| 100+ | 2.5 EUR |
| 500+ | 2.02 EUR |