NVTYS004N03CLTWG onsemi
Hersteller: onsemiDescription: T6 30V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 51.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-LFPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 12+ | 1.52 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
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Technische Details NVTYS004N03CLTWG onsemi
Description: T6 30V N-CH LL IN LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Power Dissipation (Max): 3W (Ta), 51.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-LFPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 369A; 1.6W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 369A Power dissipation: 1.6W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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NVTYS004N03CLTWG | Hersteller : onsemi |
Description: T6 30V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 51.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVTYS004N03CLTWG | Hersteller : onsemi |
MOSFETs MOSFET - Power, Single, N-Channel |
Produkt ist nicht verfügbar |
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| NVTYS004N03CLTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 369A; 1.6W; LFPAK33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 369A Power dissipation: 1.6W Case: LFPAK33 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
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