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FDD770N15A FDD770N15A ONSEMI fdd770n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
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MSR1560G ONSEMI msr1560-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Reverse recovery time: 45ns
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KA1H0165RTU ONSEMI ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
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LM358M LM358M ONSEMI pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3 Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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MM3Z2V4T1G MM3Z2V4T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6096 Stücke:
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556+0.13 EUR
834+0.086 EUR
1462+0.049 EUR
1846+0.039 EUR
2858+0.025 EUR
3312+0.022 EUR
3522+0.02 EUR
Mindestbestellmenge: 556
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SZMM3Z2V4T1G SZMM3Z2V4T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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SZNSP8814LMTWTAG ONSEMI Category: Protection diodes - arrays
Description: Diode: TVS array; quadruple,common anode; WDFN10; reel,tape
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: WDFN10
Kind of package: reel; tape
Application: automotive industry
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SZNSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Number of channels: 2
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SZNSP4201MR6T1G ONSEMI nsp4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Type of diode: TVS array
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: unidirectional
Case: TSOP6
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BD440S BD440S ONSEMI BD440%2C442.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 36W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 36W
Case: TO126ISO
Current gain: 40...140
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
auf Bestellung 1064 Stücke:
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53+1.36 EUR
77+0.94 EUR
85+0.84 EUR
111+0.65 EUR
117+0.61 EUR
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GBU4K GBU4K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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NCP3335ADM300R2G ONSEMI ncp3335a-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
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MC10ELT21DG MC10ELT21DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD207959820&compId=MC10ELT21DG.pdf?ci_sign=1158765f2c537b9fd81223572101b8d7aa1e4a0d Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Number of inputs: 2
Manufacturer series: 10ELT
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ESD7004MUTAG ONSEMI esd7004-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZESD7004MUTAG ONSEMI esd7004-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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NCP383LMUAJAATXG ONSEMI ncp383-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Output current: 0.5...2.8A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: low
Kind of package: reel; tape
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: uDFN10
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
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NXH006P120M3F2PTHG ONSEMI nxh006p120m3f2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 191A
Case: PIM36
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 14.6mΩ
Pulsed drain current: 382A
Power dissipation: 556W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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NXH006P120MNF2PTG ONSEMI nxh006p120mnf2-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 304A
Case: PIM36
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 7.28mΩ
Pulsed drain current: 912A
Power dissipation: 950W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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FXLP4555MPX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5BF6D7ED1820&compId=FXLP4555MPX.pdf?ci_sign=4afdaecf34a08e0d580e72513a4cfa6116af6179 Category: Level translators
Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD
Kind of integrated circuit: level shifter; translator
Type of integrated circuit: digital
Case: MLP16
Application: for smart card application
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 1
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
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HUF75345P3 HUF75345P3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819839B1FBBC2259&compId=HUF75345.pdf?ci_sign=b8113035ae49657f47b5926ecb9d1ecb426f21bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Mounting: THT
Drain-source voltage: 55V
Drain current: 75A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
Polarisation: unipolar
Kind of package: tube
Gate charge: 275nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
auf Bestellung 11 Stücke:
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11+6.51 EUR
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MM3Z15VST1G MM3Z15VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 1224 Stücke:
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566+0.13 EUR
1042+0.069 EUR
1224+0.059 EUR
Mindestbestellmenge: 566
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MM3Z15VC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
auf Bestellung 2985 Stücke:
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585+0.12 EUR
1064+0.067 EUR
1104+0.065 EUR
1348+0.053 EUR
1553+0.046 EUR
1667+0.043 EUR
1707+0.042 EUR
Mindestbestellmenge: 585
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MM3Z15VB ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2D18229E340D3&compId=MM3Z9V1B.PDF?ci_sign=65dd7bc3479acba487a5d8985c5a4f52153fb609 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Leakage current: 45nA
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LM2596DSADJR4G ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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LM2596TVADJG ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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LM2904ADMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
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MJ2955G ONSEMI 2n3055-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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MJD2955T4G ONSEMI mjd2955-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Type of transistor: PNP
Mounting: SMD
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
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MJE2955TG ONSEMI mje2955t-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
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SVD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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SS8550CTA ONSEMI ss8550-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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NGTB40N120FL2WG ONSEMI ngtb40n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Kind of package: tube
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NTHL040N120M3S ONSEMI nthl040n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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NVBG040N120M3S ONSEMI NVBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVBG040N120SC1 ONSEMI nvbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 ONSEMI nvhl040n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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LM358EDR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Bandwidth: 1.1MHz
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 150nA
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LM358DMR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 100...300
Frequency: 250MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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NSVMMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Application: automotive industry
Collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 100...300
Frequency: 250MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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LM339DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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LM339EDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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FCP380N60 ONSEMI fcpf380n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60E ONSEMI FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60 ONSEMI fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60E ONSEMI FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NGTB15N120FL2WG ONSEMI ngtb15n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 147W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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NGTB25N120FL3WG ONSEMI ngtb25n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 136nC
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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NSVBC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC33202DMR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: Micro8
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 100nA
Number of channels: dual
Produkt ist nicht verfügbar
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MC33202VDR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: SO8
Slew rate: 1V/μs
Operating temperature: -55...125°C
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Number of channels: dual
Produkt ist nicht verfügbar
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LM2902DTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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LM2902EDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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LM2902VDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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LM2902VDTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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RGF1G RGF1G ONSEMI ONSM-S-A0003589565-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
216+0.33 EUR
311+0.23 EUR
329+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
RGF1K ONSEMI RGF1M-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVRGF1D ONSEMI rgf1m-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RGF1B RGF1B ONSEMI ONSM-S-A0003589565-1.pdf?t.download=true&u=5oefqw FAIR-S-A0002364047-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RGF1D RGF1D ONSEMI ONSM-S-A0003589565-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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MSR1560G msr1560-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Reverse recovery time: 45ns
Produkt ist nicht verfügbar
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KA1H0165RTU ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Produkt ist nicht verfügbar
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LM358M pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3
LM358M
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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MM3Z2V4T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z2V4T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6096 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
834+0.086 EUR
1462+0.049 EUR
1846+0.039 EUR
2858+0.025 EUR
3312+0.022 EUR
3522+0.02 EUR
Mindestbestellmenge: 556
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SZMM3Z2V4T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z2V4T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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SZNSP8814LMTWTAG
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; quadruple,common anode; WDFN10; reel,tape
Type of diode: TVS array
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: WDFN10
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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SZNSP2201MR6T1G nsp2201mr6-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Number of channels: 2
Produkt ist nicht verfügbar
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SZNSP4201MR6T1G nsp4201mr6-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Type of diode: TVS array
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Kind of package: reel; tape
Application: automotive industry
Semiconductor structure: unidirectional
Case: TSOP6
Produkt ist nicht verfügbar
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BD440S BD440%2C442.pdf
BD440S
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 4A; 36W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 36W
Case: TO126ISO
Current gain: 40...140
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
77+0.94 EUR
85+0.84 EUR
111+0.65 EUR
117+0.61 EUR
Mindestbestellmenge: 53
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GBU4K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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NCP3335ADM300R2G ncp3335a-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 3V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Produkt ist nicht verfügbar
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MC10ELT21DG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD207959820&compId=MC10ELT21DG.pdf?ci_sign=1158765f2c537b9fd81223572101b8d7aa1e4a0d
MC10ELT21DG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Number of inputs: 2
Manufacturer series: 10ELT
Produkt ist nicht verfügbar
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ESD7004MUTAG esd7004-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZESD7004MUTAG esd7004-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; quadruple,common anode; uDFN10; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCP383LMUAJAATXG ncp383-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Output current: 0.5...2.8A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Active logical level: low
Kind of package: reel; tape
Control voltage: 0...5.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: uDFN10
Supply voltage: 2.7...5.5V DC
On-state resistance: 95mΩ
Produkt ist nicht verfügbar
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NXH006P120M3F2PTHG nxh006p120m3f2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 191A
Case: PIM36
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 14.6mΩ
Pulsed drain current: 382A
Power dissipation: 556W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH006P120MNF2PTG nxh006p120mnf2-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 304A
Case: PIM36
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 7.28mΩ
Pulsed drain current: 912A
Power dissipation: 950W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FXLP4555MPX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5BF6D7ED1820&compId=FXLP4555MPX.pdf?ci_sign=4afdaecf34a08e0d580e72513a4cfa6116af6179
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter,translator; Ch: 1; 1.65÷5.5VDC; SMD
Kind of integrated circuit: level shifter; translator
Type of integrated circuit: digital
Case: MLP16
Application: for smart card application
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 1
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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HUF75345P3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819839B1FBBC2259&compId=HUF75345.pdf?ci_sign=b8113035ae49657f47b5926ecb9d1ecb426f21bd
HUF75345P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; TO220AB
Mounting: THT
Drain-source voltage: 55V
Drain current: 75A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 325W
Polarisation: unipolar
Kind of package: tube
Gate charge: 275nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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MM3Z15VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z15VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 1224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
566+0.13 EUR
1042+0.069 EUR
1224+0.059 EUR
Mindestbestellmenge: 566
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MM3Z15VC pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1064+0.067 EUR
1104+0.065 EUR
1348+0.053 EUR
1553+0.046 EUR
1667+0.043 EUR
1707+0.042 EUR
Mindestbestellmenge: 585
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MM3Z15VB pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2D18229E340D3&compId=MM3Z9V1B.PDF?ci_sign=65dd7bc3479acba487a5d8985c5a4f52153fb609
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Leakage current: 45nA
Produkt ist nicht verfügbar
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LM2596DSADJR4G lm2596-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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LM2596TVADJG lm2596-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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LM2904ADMR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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MJ2955G 2n3055-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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MJD2955T4G mjd2955-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Kind of package: reel; tape
Case: DPAK
Type of transistor: PNP
Mounting: SMD
Power dissipation: 20W
Current gain: 20...100
Collector current: 10A
Collector-emitter voltage: 60V
Frequency: 2MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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MJE2955TG mje2955t-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
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SVD2955T4G ntd2955-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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SS8550CTA ss8550-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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NGTB40N120FL2WG ngtb40n120fl2w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Kind of package: tube
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NTHL040N120M3S nthl040n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NVBG040N120M3S NVBG040N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 nvhl040n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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LM358EDR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Number of channels: 2
Bandwidth: 1.1MHz
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 150nA
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LM358DMR2G description lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBT3906TT1G mmbt3906tt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 100...300
Frequency: 250MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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NSVMMBT3906TT1G mmbt3906tt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Application: automotive industry
Collector current: 0.2A
Power dissipation: 0.2W
Collector-emitter voltage: 40V
Current gain: 100...300
Frequency: 250MHz
Polarisation: bipolar
Type of transistor: PNP
Produkt ist nicht verfügbar
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LM339DTBR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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LM339EDR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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FCP380N60 fcpf380n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60 fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60E FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NGTB15N120FL2WG ngtb15n120fl2w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Power dissipation: 147W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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NGTB25N120FL3WG ngtb25n120fl3w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 136nC
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 174W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Produkt ist nicht verfügbar
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NSVBC817-40WT1G bc817-40w-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC33202DMR2G mc33201-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: Micro8
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 100nA
Number of channels: dual
Produkt ist nicht verfügbar
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MC33202VDR2G mc33201-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: SO8
Slew rate: 1V/μs
Operating temperature: -55...125°C
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Number of channels: dual
Produkt ist nicht verfügbar
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LM2902DTBR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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LM2902EDR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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LM2902VDR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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LM2902VDTBR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 200nA
Voltage supply range: 3...32V DC
Produkt ist nicht verfügbar
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RGF1G ONSM-S-A0003589565-1.pdf?t.download=true&u=5oefqw
RGF1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
auf Bestellung 2726 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
216+0.33 EUR
311+0.23 EUR
329+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 179
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RGF1K RGF1M-D.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVRGF1D rgf1m-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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RGF1B ONSM-S-A0003589565-1.pdf?t.download=true&u=5oefqw FAIR-S-A0002364047-1.pdf?t.download=true&u=5oefqw
RGF1B
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGF1D ONSM-S-A0003589565-1.pdf?t.download=true&u=5oefqw
RGF1D
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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