| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MMBTA92 | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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S1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 6.6pF Power dissipation: 1.4W Features of semiconductor devices: glass passivated |
auf Bestellung 1871 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S1KFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.2A Reverse recovery time: 1.5µs Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDC8886 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Pulsed drain current: 25A Power dissipation: 1.6W Gate charge: 7.4nC Polarisation: unipolar Technology: PowerTrench® Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-6 On-state resistance: 36mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MMBTA13LT3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; 30V; 300mA; 225mW; SOT23-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23-3 Mounting: SMD Frequency: 125MHz |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74AC540DWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal Number of channels: 8 Mounting: SMD Case: SOIC20 Manufacturer series: AC Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Technology: CMOS Family: AC |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 74AC540SCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; AC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: AC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MC74AC540DWR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8 Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal Number of channels: 8 Mounting: SMD Case: SOIC20 Manufacturer series: AC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Technology: CMOS Family: AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDMS039N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56 Pulsed drain current: 400A Power dissipation: 104W Gate charge: 0.1µC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 3.9mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS0300S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Pulsed drain current: 180A Power dissipation: 96W Gate charge: 133nC Polarisation: unipolar Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 2.5mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS0309AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Pulsed drain current: 100A Power dissipation: 50W Gate charge: 47nC Polarisation: unipolar Technology: PowerTrench® Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 4.8mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS0310AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Pulsed drain current: 100A Power dissipation: 41W Gate charge: 37nC Polarisation: unipolar Technology: PowerTrench® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 6mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMS0312AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Pulsed drain current: 100A Power dissipation: 36W Gate charge: 31nC Polarisation: unipolar Technology: PowerTrench® Drain current: 22A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: Power56 On-state resistance: 6.8mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MJ21195G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5927BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; CASE59; single diode; bulk; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NSR0320MW2T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSR0320XV6T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOT563 Mounting: SMD Max. off-state voltage: 23V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 1W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MM3Z5V1C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3Z |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAS21DW5T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.385W Kind of package: reel; tape Capacitance: 5pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSBC143ZDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 4000pcs. Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC143ZF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS5C628NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS5C628NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS5C628NLWFAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS5C628NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS5C628NWFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 900A Power dissipation: 56W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDA69N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44.2A Pulsed drain current: 276A Power dissipation: 480W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDP52N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 357W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.65V Max. load current: 130A Kind of package: reel; tape |
auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 74LVTH162244MTD | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; BiCMOS; SMD Technology: BiCMOS Case: TSSOP48 Mounting: SMD Kind of package: tube Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Supply voltage: 2.7...3.6V DC Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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2V7002WT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W; ESD Mounting: SMD Case: SC70; SOT323 Pulsed drain current: 1.4A Power dissipation: 0.28W Gate charge: 0.7nC Polarisation: unipolar Version: ESD Drain current: 0.22A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 2.5Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMBTA92 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S1K |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 6.6pF
Power dissipation: 1.4W
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 6.6pF
Power dissipation: 1.4W
Features of semiconductor devices: glass passivated
auf Bestellung 1871 Stücke:
Lieferzeit 14-21 Tag (e)
| S1KFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 1.5us; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC8886 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Pulsed drain current: 25A
Power dissipation: 1.6W
Gate charge: 7.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 36mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Pulsed drain current: 25A
Power dissipation: 1.6W
Gate charge: 7.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-6
On-state resistance: 36mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA13LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 300mA; 225mW; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23-3
Mounting: SMD
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 300mA; 225mW; SOT23-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23-3
Mounting: SMD
Frequency: 125MHz
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74AC540DWG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
| 74AC540SCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; AC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 40µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC540DWR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,octal,inverting,line driver; Ch: 8
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; inverting; line driver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Technology: CMOS
Family: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS039N08B |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Pulsed drain current: 400A
Power dissipation: 104W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 3.9mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Pulsed drain current: 400A
Power dissipation: 104W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 3.9mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| FDMS0300S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Pulsed drain current: 180A
Power dissipation: 96W
Gate charge: 133nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 2.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Pulsed drain current: 180A
Power dissipation: 96W
Gate charge: 133nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 2.5mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| FDMS0309AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Pulsed drain current: 100A
Power dissipation: 50W
Gate charge: 47nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 4.8mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| FDMS0310AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Pulsed drain current: 100A
Power dissipation: 41W
Gate charge: 37nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Pulsed drain current: 100A
Power dissipation: 41W
Gate charge: 37nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| FDMS0312AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Pulsed drain current: 100A
Power dissipation: 36W
Gate charge: 31nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Pulsed drain current: 100A
Power dissipation: 36W
Gate charge: 31nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: Power56
On-state resistance: 6.8mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| MJ21195G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5927BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; bulk; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; bulk; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N59xxB
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| NSR0320MW2T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
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| NSR0320XV6T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT563
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT563
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 7A
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| MMBT2222A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 1W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| MM3Z5V1C |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
Produkt ist nicht verfügbar
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| BAS21DW5T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.385W
Kind of package: reel; tape
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC88A; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.385W
Kind of package: reel; tape
Capacitance: 5pF
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| NSBC143ZDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 4000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 4000pcs.
Current gain: 80...200
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| NSBC143ZF3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...200
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| NVMFS5C628NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS5C628NLAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NVMFS5C628NLWFAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NVMFS5C628NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NVMFS5C628NWFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 900A; 56W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 900A
Power dissipation: 56W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDA69N25 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
| FDP52N20 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRS2H100T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.65V
Max. load current: 130A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.65V
Max. load current: 130A
Kind of package: reel; tape
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
| 74LVTH162244MTD |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; BiCMOS; SMD
Technology: BiCMOS
Case: TSSOP48
Mounting: SMD
Kind of package: tube
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; BiCMOS; SMD
Technology: BiCMOS
Case: TSSOP48
Mounting: SMD
Kind of package: tube
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Supply voltage: 2.7...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3800 Stücke
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| 2V7002WT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W; ESD
Mounting: SMD
Case: SC70; SOT323
Pulsed drain current: 1.4A
Power dissipation: 0.28W
Gate charge: 0.7nC
Polarisation: unipolar
Version: ESD
Drain current: 0.22A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.4A; 0.28W; ESD
Mounting: SMD
Case: SC70; SOT323
Pulsed drain current: 1.4A
Power dissipation: 0.28W
Gate charge: 0.7nC
Polarisation: unipolar
Version: ESD
Drain current: 0.22A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH