Foto | Bezeichnung | Hersteller | Beschreibung |
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74AC541MTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
auf Bestellung 322 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC541SC | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20 Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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MC7818BTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 18V; 1A; TO220AB; THT; tube Kind of package: tube Case: TO220AB Kind of voltage regulator: fixed; linear Mounting: THT Number of channels: 1 Output current: 1A Output voltage: 18V Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC7818CD2TR4G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 18V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Case: D2PAK Kind of voltage regulator: fixed; linear Mounting: SMD Number of channels: 1 Output current: 1A Output voltage: 18V Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC7812BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800 Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 1A Case: DPAK Number of channels: 1 Voltage drop: 2V Tolerance: ±4% Mounting: SMD Input voltage: 15.5...27V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZX84C2V7LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 20uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 20µA |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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TIL111M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; CTR@If: 2%@16mA; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Case: DIP6 CTR@If: 2%@16mA Turn-on time: 20µs Turn-off time: 10µs |
auf Bestellung 830 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVDTC143ZET1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 80...200 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMSZ5266BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 68V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 1314 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ5266BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 68V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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80SQ045NRLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT456P | ONSEMI |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -30V; 7.5/-7.5A; 3W; SOT223-4 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: 7.5/-7.5A Power dissipation: 3W Case: SOT223-4 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 47nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TIP110G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NCS199A2RSQT2G | ONSEMI |
![]() Description: IC: instrumentation amplifier; 60kHz; SC70-6; 100V/V; 0.15mV Type of integrated circuit: instrumentation amplifier Bandwidth: 60kHz Mounting: SMT Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Gain: 100V/V Input offset voltage: 0.15mV Voltage supply range: 2.2...26V DC Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCS199A1RSQT2G | ONSEMI |
![]() Description: IC: instrumentation amplifier; 90kHz; SC70-6; 50V/V; 0.15mV Type of integrated circuit: instrumentation amplifier Bandwidth: 90kHz Mounting: SMT Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Gain: 50V/V Input offset voltage: 0.15mV Voltage supply range: 2.2...26V DC Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BC807-25LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBC807-25LT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SBC807-25WT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
LM1117MPX-18NOPB | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM1117MPX-33NOPB | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM1117MPX-25NOPB | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.5V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUN5135DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Polarisation: bipolar Kind of transistor: BRT Mounting: SMD Type of transistor: PNP x2 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BAS20HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward impulse current: 625mA Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 3085 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS20HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NSVBAS20LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MARBAS20HT1G | ONSEMI |
Category: Unclassified Description: MARBAS20HT1G |
auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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MARSBAS20HT1G | ONSEMI |
Category: Unclassified Description: MARSBAS20HT1G |
auf Bestellung 321000 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C3V3LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FOD817D3S | ONSEMI |
![]() Description: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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MJF18004G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP Mounting: THT Kind of package: tube Collector current: 5A Current gain: 14...34 Collector-emitter voltage: 450V Frequency: 13MHz Power dissipation: 35W Polarisation: bipolar Case: TO220FP Type of transistor: NPN |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD7551N2T5G | ONSEMI |
![]() Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Capacitance: 0.22...0.35pF Version: ESD Peak pulse power dissipation: 0.25W Case: CASE714AB; X2DFN2 |
auf Bestellung 636 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD9X5.0ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 0.15W Case: SOD923 |
auf Bestellung 9212 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C430NLAFT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 900A Power dissipation: 53W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMSD4148T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 1A; 425mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward impulse current: 1A Kind of package: reel; tape Power dissipation: 0.425W Max. load current: 0.5A Capacitance: 4pF Features of semiconductor devices: fast switching |
auf Bestellung 7292 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSD4148T3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.425W Leakage current: 5µA Capacitance: 4pF |
Produkt ist nicht verfügbar |
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SMMSD4148T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SMMSD4148T3G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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H11L3M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Insulation voltage: 4.17kV Case: DIP6 Turn-on time: 0.1µs Turn-off time: 0.12µs Manufacturer series: H11LXM |
auf Bestellung 838 Stücke: Lieferzeit 14-21 Tag (e) |
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H11L2M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Manufacturer series: H11LXM Case: DIP6 Type of optocoupler: optocoupler Kind of output: Schmitt trigger Mounting: THT Turn-off time: 4µs Turn-on time: 4µs Number of channels: 1 Insulation voltage: 4.17kV |
auf Bestellung 933 Stücke: Lieferzeit 14-21 Tag (e) |
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H11L3SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Case: PDIP6 Mounting: SMD Kind of output: gate; logic Manufacturer series: H11L3 Type of optocoupler: optocoupler Output voltage: 0...16V Turn-on time: 1µs Turn-off time: 1.2µs Number of channels: 1 Max. off-state voltage: 6V Insulation voltage: 4.17kV Transfer rate: 1Mbps |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD9B3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5...7V Case: SOD923 Mounting: SMD Kind of package: reel; tape Version: ESD Leakage current: 0.1µA Capacitance: 15pF Peak pulse power dissipation: 0.3W |
auf Bestellung 13502 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84B6V8LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOT23 Leakage current: 2µA Kind of package: reel; tape Manufacturer series: BZX84B Power dissipation: 0.3W Tolerance: ±2% Zener voltage: 6.8V |
auf Bestellung 5950 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC5242OTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 130W Case: TO3P Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCV33072DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Number of channels: dual Case: SO8 Mounting: SMT Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 300nA Input bias current: 0.7µA Input offset voltage: 7mV Voltage supply range: 3...44V DC Slew rate: 13V/μs Bandwidth: 4.5MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC33071ADR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: single Case: SO8 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
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NCS2003SN2T1G | ONSEMI |
![]() Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: SOT23-5 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCS20032DMR2G | ONSEMI |
![]() Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: Micro8 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCS20032DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: SO8 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCS20032DTBR2G | ONSEMI |
![]() Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: TSSOP8 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: dual |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DF01S | ONSEMI |
![]() Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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NTTFS5C453NLTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NTTFS5C453NLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
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NVTFS5C453NLTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3.1mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
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NVTFS5C453NLWFTAG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3.1mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
Produkt ist nicht verfügbar |
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NTH4L013N120M3S | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 254nC Power dissipation: 340W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 505A Polarisation: unipolar |
Produkt ist nicht verfügbar |
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NTH4L014N120M3P | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 322nC Power dissipation: 343W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 407A Polarisation: unipolar |
Produkt ist nicht verfügbar |
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DTC114YM3T5G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.6W Quantity in set/package: 8000pcs. Current gain: 80...140 |
Produkt ist nicht verfügbar |
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DTC114YET1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.2W Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MARMC14093BDR2G | ONSEMI |
Category: Unclassified Description: MARMC14093BDR2G |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCS20072DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Number of channels: 2 Case: SO8 Mounting: SMT Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: rail-to-rail output Input offset voltage: 4mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.8V/μs Bandwidth: 3MHz |
auf Bestellung 1159 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC541MTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
108+ | 0.66 EUR |
120+ | 0.6 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
250+ | 0.49 EUR |
74AC541SC |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
119+ | 0.6 EUR |
MC7818BTG |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1A; TO220AB; THT; tube
Kind of package: tube
Case: TO220AB
Kind of voltage regulator: fixed; linear
Mounting: THT
Number of channels: 1
Output current: 1A
Output voltage: 18V
Type of integrated circuit: voltage regulator
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1A; TO220AB; THT; tube
Kind of package: tube
Case: TO220AB
Kind of voltage regulator: fixed; linear
Mounting: THT
Number of channels: 1
Output current: 1A
Output voltage: 18V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC7818CD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Number of channels: 1
Output current: 1A
Output voltage: 18V
Type of integrated circuit: voltage regulator
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Number of channels: 1
Output current: 1A
Output voltage: 18V
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC7812BDTRKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Mounting: SMD
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: DPAK
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Mounting: SMD
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C2V7LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 20uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 20uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 20µA
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
525+ | 0.14 EUR |
995+ | 0.072 EUR |
TIL111M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; CTR@If: 2%@16mA; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Case: DIP6
CTR@If: 2%@16mA
Turn-on time: 20µs
Turn-off time: 10µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; CTR@If: 2%@16mA; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Case: DIP6
CTR@If: 2%@16mA
Turn-on time: 20µs
Turn-off time: 10µs
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
181+ | 0.4 EUR |
202+ | 0.35 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
NSVDTC143ZET1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...200
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMSZ5266BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1314 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
848+ | 0.084 EUR |
1017+ | 0.07 EUR |
1314+ | 0.054 EUR |
SZMMSZ5266BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
80SQ045NRLG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
86+ | 0.84 EUR |
94+ | 0.77 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
500+ | 0.56 EUR |
NDT456P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; 7.5/-7.5A; 3W; SOT223-4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: 7.5/-7.5A
Power dissipation: 3W
Case: SOT223-4
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; 7.5/-7.5A; 3W; SOT223-4
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: 7.5/-7.5A
Power dissipation: 3W
Case: SOT223-4
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 47nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TIP110G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCS199A2RSQT2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; SC70-6; 100V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 60kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Gain: 100V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; SC70-6; 100V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 60kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Gain: 100V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCS199A1RSQT2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 90kHz; SC70-6; 50V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 90kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 90kHz; SC70-6; 50V/V; 0.15mV
Type of integrated circuit: instrumentation amplifier
Bandwidth: 90kHz
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.15mV
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC807-25LT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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SBC807-25LT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SBC807-25WT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM1117MPX-18NOPB |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM1117MPX-33NOPB |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM1117MPX-25NOPB |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MUN5135DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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BAS20HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ifsm: 625mA; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3085 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
715+ | 0.1 EUR |
807+ | 0.089 EUR |
873+ | 0.082 EUR |
1214+ | 0.059 EUR |
1389+ | 0.051 EUR |
3085+ | 0.023 EUR |
SBAS20HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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NSVBAS20LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MARBAS20HT1G |
auf Bestellung 75000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.019 EUR |
MARSBAS20HT1G |
auf Bestellung 321000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.019 EUR |
SZBZX84C3V3LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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FOD817D3S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.13 EUR |
MJF18004G | ![]() |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Collector current: 5A
Current gain: 14...34
Collector-emitter voltage: 450V
Frequency: 13MHz
Power dissipation: 35W
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Collector current: 5A
Current gain: 14...34
Collector-emitter voltage: 450V
Frequency: 13MHz
Power dissipation: 35W
Polarisation: bipolar
Case: TO220FP
Type of transistor: NPN
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.2 EUR |
ESD7551N2T5G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
417+ | 0.17 EUR |
506+ | 0.14 EUR |
636+ | 0.11 EUR |
ESD9X5.0ST5G |
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Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
auf Bestellung 9212 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
820+ | 0.087 EUR |
1191+ | 0.06 EUR |
1401+ | 0.051 EUR |
1725+ | 0.041 EUR |
2009+ | 0.036 EUR |
2428+ | 0.029 EUR |
2565+ | 0.028 EUR |
2660+ | 0.027 EUR |
NVMFS5C430NLAFT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 900A
Power dissipation: 53W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSD4148T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 1A; 425mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.425W
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ifsm: 1A; 425mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward impulse current: 1A
Kind of package: reel; tape
Power dissipation: 0.425W
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
auf Bestellung 7292 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
776+ | 0.092 EUR |
1924+ | 0.037 EUR |
2174+ | 0.033 EUR |
2305+ | 0.031 EUR |
2488+ | 0.029 EUR |
2646+ | 0.027 EUR |
2825+ | 0.025 EUR |
4386+ | 0.016 EUR |
4630+ | 0.015 EUR |
MMSD4148T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.425W
Leakage current: 5µA
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.425W
Leakage current: 5µA
Capacitance: 4pF
Produkt ist nicht verfügbar
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SMMSD4148T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMSD4148T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
H11L3M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Manufacturer series: H11LXM
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Insulation voltage: 4.17kV
Case: DIP6
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Manufacturer series: H11LXM
auf Bestellung 838 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
101+ | 0.71 EUR |
109+ | 0.66 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
500+ | 0.55 EUR |
H11L2M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Manufacturer series: H11LXM
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: Schmitt trigger
Mounting: THT
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Manufacturer series: H11LXM
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: Schmitt trigger
Mounting: THT
Turn-off time: 4µs
Turn-on time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
auf Bestellung 933 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
126+ | 0.57 EUR |
158+ | 0.45 EUR |
168+ | 0.43 EUR |
500+ | 0.42 EUR |
H11L3SR2M |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Case: PDIP6
Mounting: SMD
Kind of output: gate; logic
Manufacturer series: H11L3
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Case: PDIP6
Mounting: SMD
Kind of output: gate; logic
Manufacturer series: H11L3
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.27 EUR |
78+ | 0.92 EUR |
96+ | 0.75 EUR |
102+ | 0.71 EUR |
250+ | 0.68 EUR |
ESD9B3.3ST5G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
auf Bestellung 13502 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
603+ | 0.12 EUR |
940+ | 0.076 EUR |
1134+ | 0.063 EUR |
1421+ | 0.05 EUR |
1774+ | 0.04 EUR |
1894+ | 0.038 EUR |
2000+ | 0.037 EUR |
BZX84B6V8LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: BZX84B
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Leakage current: 2µA
Kind of package: reel; tape
Manufacturer series: BZX84B
Power dissipation: 0.3W
Tolerance: ±2%
Zener voltage: 6.8V
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
532+ | 0.13 EUR |
680+ | 0.11 EUR |
1067+ | 0.067 EUR |
2056+ | 0.035 EUR |
2174+ | 0.033 EUR |
2500+ | 0.032 EUR |
2SC5242OTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV33072DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: dual
Case: SO8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: dual
Case: SO8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 300nA
Input bias current: 0.7µA
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Slew rate: 13V/μs
Bandwidth: 4.5MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC33071ADR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: single
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: single
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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NCS2003SN2T1G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: single
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NCS20032DMR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: Micro8
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: Micro8
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: dual
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NCS20032DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO8
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO8
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: dual
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NCS20032DTBR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: TSSOP8
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: TSSOP8
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: dual
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DF01S |
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Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.1 EUR |
NTTFS5C453NLTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTTFS5C453NLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NVTFS5C453NLTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Produkt ist nicht verfügbar
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NVTFS5C453NLWFTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTH4L013N120M3S |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
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NTH4L014N120M3P |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Produkt ist nicht verfügbar
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DTC114YM3T5G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.6W
Quantity in set/package: 8000pcs.
Current gain: 80...140
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DTC114YET1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Current gain: 80...140
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MARMC14093BDR2G |
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.19 EUR |
NCS20072DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Number of channels: 2
Case: SO8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Number of channels: 2
Case: SO8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
auf Bestellung 1159 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
93+ | 0.78 EUR |
112+ | 0.64 EUR |
149+ | 0.48 EUR |
157+ | 0.46 EUR |
500+ | 0.45 EUR |
1000+ | 0.44 EUR |