| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NCS211RMUTAG | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; UQFN10 Type of integrated circuit: instrumentation amplifier Number of channels: single; 1 Mounting: SMT Case: UQFN10 Operating temperature: -40...125°C Gain: 500V/V Input offset voltage: 35µV Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Input bias current: 60µA Voltage supply range: 2.2...26V DC Kind of package: reel; tape Input offset current: 100nA Bandwidth: 25kHz |
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| NCS211RSQT2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Number of channels: single; 1 Mounting: SMT Case: SC70-6 Operating temperature: -40...125°C Gain: 500V/V Input offset voltage: 35µV Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Input bias current: 60µA Voltage supply range: 2.2...26V DC Kind of package: reel; tape Input offset current: 100nA Bandwidth: 25kHz |
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| NCV211RSQT2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Number of channels: single; 1 Mounting: SMT Case: SC70-6 Operating temperature: -40...125°C Gain: 500V/V Input offset voltage: 35µV Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Input bias current: 60µA Voltage supply range: 2.2...26V DC Kind of package: reel; tape Input offset current: 100nA Bandwidth: 25kHz |
Produkt ist nicht verfügbar |
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FQP15P12 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Drain current: -10.6A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: -60A |
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MUN5213T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 6262 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5213T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
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MUN5213DW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 140 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMUN5213DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
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MMSD914T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.425W Kind of package: reel; tape |
auf Bestellung 285 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSD914T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.425W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMMSD914T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMUN5314DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Polarisation: bipolar Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 80...140 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5311DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 60 Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W |
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MUN5315DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W |
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2SC6099-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; DPAK Mounting: SMD Collector-emitter voltage: 100V Power dissipation: 0.8W Polarisation: bipolar Type of transistor: NPN Current gain: 300...600 Kind of package: reel; tape Case: DPAK Frequency: 300MHz Collector current: 2A |
Produkt ist nicht verfügbar |
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CPH6350-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23 Mounting: SMD Gate charge: 13nC Polarisation: unipolar Drain current: -6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 86mΩ Pulsed drain current: -24A Power dissipation: 1.6W |
auf Bestellung 2553 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4004 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NB3H5150-01MNTXG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; QFN32,VQFN32 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital Case: QFN32; VQFN32 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NB3H5150MNTXG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; QFN32,VQFN32 Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital Case: QFN32; VQFN32 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2SC5964-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.3W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.3W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 380MHz |
Produkt ist nicht verfügbar |
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| NVMFS5C468NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 190A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 190A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 10.3mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement |
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SB5100 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| POE-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NCP1083 Type of accessories for development kits: expansion board Kit contents: prototype board Components: NCP1083 Connection: pin strips; RJ45 development kits accessories features: Arduino Shield compatible Interface: I2C; I2C - Slave; SPI |
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| STRUIX-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board development kits accessories features: Arduino Shield compatible; heart rate sensor |
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| TS-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: LC717A00AR Type of accessories for development kits: expansion board Kit contents: prototype board Components: LC717A00AR Connection: Pmod connector development kits accessories features: Arduino compatible; capacitive keypad Interface: I2C; I2C - Slave; SPI |
Produkt ist nicht verfügbar |
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FDP027N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 223A Power dissipation: 246W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 892A Gate charge: 137nC |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC4040DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter Type of integrated circuit: digital Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter Number of channels: 1 Number of inputs: 2 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC16 Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMBJ15CA | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 100A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NZT560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223-4; TO261-4 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz Current gain: 250...550 |
auf Bestellung 2642 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRB8H100T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 0.55V Max. forward impulse current: 250A Kind of package: reel; tape |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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SS14 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.5V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A |
auf Bestellung 8868 Stücke: Lieferzeit 14-21 Tag (e) |
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NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2102 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N4148-T50A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: Ammo Pack Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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NDT3055 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 25A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 25A |
auf Bestellung 2552 Stücke: Lieferzeit 14-21 Tag (e) |
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NVD3055-094T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 10.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
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Im Einkaufswagen Stück im Wert von UAH |
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NVD3055-150T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 45A; 28.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 28.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A |
Produkt ist nicht verfügbar |
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NC7SZ00P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA |
auf Bestellung 2275 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7SZ00M5X-L22090 | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 7SZ; -40÷85°C; 2uA; OUT: 1 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SOT23-5 Operating temperature: -40...85°C Quiescent current: 2µA Manufacturer series: 7SZ Number of outputs: 1 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NXH450N65L4Q2F2S1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC Technology: SiC Collector current: 450A Case: PIM40 Gate-emitter voltage: ±20V Mechanical mounting: screw Application: for UPS; Inverter Max. off-state voltage: 650V Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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FCP150N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 298W Case: TO220-3 Mounting: THT Kind of package: tube Gate-source voltage: ±20V On-state resistance: 0.15Ω Pulsed drain current: 72A Gate charge: 72nC Polarisation: unipolar Drain current: 24A Kind of channel: enhancement Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS16 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 2pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MOCD207R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 3µs Turn-off time: 2.8µs |
auf Bestellung 4627 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOCD207D2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: SOIC8 Turn-on time: 7.5µs Turn-off time: 5.7µs Manufacturer series: MOCD207 Max. off-state voltage: 6V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MOCD208M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 40-125%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MOCD208R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 40-125%@10mA Collector-emitter voltage: 70V Case: SOIC8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V Manufacturer series: MOCD208 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MOCD211M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
Produkt ist nicht verfügbar |
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| MOCD211R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: SOIC8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V Manufacturer series: MOCD211 |
Produkt ist nicht verfügbar |
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MOCD223R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 8µs Turn-off time: 55µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHC4052DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SOIC16 Family: VHC Kind of package: reel; tape Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Manufacturer series: VHC Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74VHC4052DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: TSSOP16 Family: VHC Kind of package: reel; tape Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC Manufacturer series: VHC Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SZMMSZ5236BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MSQA6V1W5T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.1...7.2V Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC88A Max. off-state voltage: 3V Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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1N4148 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: bulk; tape Max. forward voltage: 1V Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCP12700BDNR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1...2.8A Frequency: 185...1000kHz Number of channels: 1 Case: MSOP10 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward Operating voltage: 9...28V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP12700ADNR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1...2.8A Frequency: 185...1000kHz Number of channels: 1 Case: MSOP10 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward Operating voltage: 9...28V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP12700BMTTXG | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 1...2.8A Frequency: 185...1000kHz Number of channels: 1 Case: WQFN10 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward Operating voltage: 9...28V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP1219BD65R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 55÷71kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -500...800mA Frequency: 55...71kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Kind of package: reel; tape Application: SMPS Operating voltage: 9.4...20V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NCP1216AD100R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 86...120kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 10...12.2V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCP1216AD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 57...75kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 10...12.2V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCP1216D65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 57...75kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 10...12.2V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCS211RMUTAG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; UQFN10
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Case: UQFN10
Operating temperature: -40...125°C
Gain: 500V/V
Input offset voltage: 35µV
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input bias current: 60µA
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input offset current: 100nA
Bandwidth: 25kHz
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; UQFN10
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Case: UQFN10
Operating temperature: -40...125°C
Gain: 500V/V
Input offset voltage: 35µV
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input bias current: 60µA
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input offset current: 100nA
Bandwidth: 25kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS211RSQT2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Gain: 500V/V
Input offset voltage: 35µV
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input bias current: 60µA
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input offset current: 100nA
Bandwidth: 25kHz
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Gain: 500V/V
Input offset voltage: 35µV
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input bias current: 60µA
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input offset current: 100nA
Bandwidth: 25kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV211RSQT2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Gain: 500V/V
Input offset voltage: 35µV
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input bias current: 60µA
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input offset current: 100nA
Bandwidth: 25kHz
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 25kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Number of channels: single; 1
Mounting: SMT
Case: SC70-6
Operating temperature: -40...125°C
Gain: 500V/V
Input offset voltage: 35µV
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input bias current: 60µA
Voltage supply range: 2.2...26V DC
Kind of package: reel; tape
Input offset current: 100nA
Bandwidth: 25kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FQP15P12 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -60A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -60A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5213T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 6262 Stücke:
Lieferzeit 14-21 Tag (e)
| SMUN5213T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5213DW1T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Current gain: 140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5213DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMSD914T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.425W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.425W
Kind of package: reel; tape
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSD914T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.425W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.425W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| SMMSD914T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| SMUN5314DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| MUN5311DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MUN5315DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Produkt ist nicht verfügbar
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| 2SC6099-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; DPAK
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 0.8W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 300...600
Kind of package: reel; tape
Case: DPAK
Frequency: 300MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 0.8W; DPAK
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 0.8W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 300...600
Kind of package: reel; tape
Case: DPAK
Frequency: 300MHz
Collector current: 2A
Produkt ist nicht verfügbar
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| CPH6350-TL-W |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 86mΩ
Pulsed drain current: -24A
Power dissipation: 1.6W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 86mΩ
Pulsed drain current: -24A
Power dissipation: 1.6W
auf Bestellung 2553 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4004 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| NB3H5150-01MNTXG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NB3H5150MNTXG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN32,VQFN32
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Case: QFN32; VQFN32
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| 2SC5964-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C468NLAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 190A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 190A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 190A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 190A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 10.3mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB5100 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| POE-GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCP1083
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP1083
Connection: pin strips; RJ45
development kits accessories features: Arduino Shield compatible
Interface: I2C; I2C - Slave; SPI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCP1083
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP1083
Connection: pin strips; RJ45
development kits accessories features: Arduino Shield compatible
Interface: I2C; I2C - Slave; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STRUIX-GEVB |
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
development kits accessories features: Arduino Shield compatible; heart rate sensor
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
development kits accessories features: Arduino Shield compatible; heart rate sensor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS-GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LC717A00AR
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: LC717A00AR
Connection: Pmod connector
development kits accessories features: Arduino compatible; capacitive keypad
Interface: I2C; I2C - Slave; SPI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LC717A00AR
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: LC717A00AR
Connection: Pmod connector
development kits accessories features: Arduino compatible; capacitive keypad
Interface: I2C; I2C - Slave; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP027N08B-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 892A
Gate charge: 137nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 892A
Gate charge: 137nC
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74AC4040DR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 12-stage,asynchronous reset,binary ripple counter
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; asynchronous reset; binary ripple counter
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC16
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ15CA |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.6V; 100A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 100A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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Stück im Wert von UAH
| NZT560A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Current gain: 250...550
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Current gain: 250...550
auf Bestellung 2642 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRB8H100T4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.55V
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.55V
Max. forward impulse current: 250A
Kind of package: reel; tape
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| SS14 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
auf Bestellung 8868 Stücke:
Lieferzeit 14-21 Tag (e)
| NTF3055-100T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2102 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N4148-T50A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDT3055 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 25A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 25A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
auf Bestellung 2552 Stücke:
Lieferzeit 14-21 Tag (e)
| NVD3055-094T4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVD3055-150T4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 45A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 45A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SZ00P5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
| NC7SZ00M5X-L22090 |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 7SZ; -40÷85°C; 2uA; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Quiescent current: 2µA
Manufacturer series: 7SZ
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 7SZ; -40÷85°C; 2uA; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...85°C
Quiescent current: 2µA
Manufacturer series: 7SZ
Number of outputs: 1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| NXH450N65L4Q2F2S1G |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Technology: SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Application: for UPS; Inverter
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Technology: SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Application: for UPS; Inverter
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCP150N65F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 72A
Gate charge: 72nC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 298W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 72A
Gate charge: 72nC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS16 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 2pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| MOCD207R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
auf Bestellung 4627 Stücke:
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| MOCD207D2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Manufacturer series: MOCD207
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Manufacturer series: MOCD207
Max. off-state voltage: 6V
Produkt ist nicht verfügbar
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| MOCD208M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Produkt ist nicht verfügbar
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| MOCD208R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD208
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD208
Produkt ist nicht verfügbar
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| MOCD211M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Produkt ist nicht verfügbar
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| MOCD211R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD211
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SOIC8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Manufacturer series: MOCD211
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| MOCD223R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74VHC4052DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74VHC4052DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: VHC
Kind of package: reel; tape
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| SZMMSZ5236BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| MSQA6V1W5T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; quadruple,common anode; SC88A; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.1...7.2V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 3V
Number of channels: 4
Kind of package: reel; tape
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| 1N4148 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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| NCP12700BDNR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1...2.8A
Frequency: 185...1000kHz
Number of channels: 1
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 9...28V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1...2.8A
Frequency: 185...1000kHz
Number of channels: 1
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| NCP12700ADNR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1...2.8A
Frequency: 185...1000kHz
Number of channels: 1
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 9...28V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1...2.8A
Frequency: 185...1000kHz
Number of channels: 1
Case: MSOP10
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| NCP12700BMTTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1...2.8A
Frequency: 185...1000kHz
Number of channels: 1
Case: WQFN10
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 9...28V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1...2.8A
Frequency: 185...1000kHz
Number of channels: 1
Case: WQFN10
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP1219BD65R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 55÷71kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...800mA
Frequency: 55...71kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Kind of package: reel; tape
Application: SMPS
Operating voltage: 9.4...20V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 55÷71kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...800mA
Frequency: 55...71kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Kind of package: reel; tape
Application: SMPS
Operating voltage: 9.4...20V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP1216AD100R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 86...120kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 86...120kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP1216AD65R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP1216D65R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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