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FQP15P12 onsemi


fqp15p12-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 120V 15A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
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Technische Details FQP15P12 onsemi

Description: MOSFET P-CH 120V 15A TO220-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: P-Channel.

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FQP15P12 FQP15P12 onsemi / Fairchild FQP15P12-D.PDF MOSFETs 120V P-Channel QFET
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FQP15P12 FQP15P12-D.PDF
Hersteller: onsemi / Fairchild
MOSFETs 120V P-Channel QFET
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