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NVD3055-150T4G-VF01

NVD3055-150T4G-VF01 onsemi

ntd3055-150-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVD3055-150T4G-VF01 onsemi

Description: MOSFET N-CH 60V 9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVD3055-150T4G-VF01 NVD3055-150T4G-VF01 Hersteller : onsemi ntd3055-150-d.pdf MOSFETs NFET DPAK 60V 9A 1 50MOHM
auf Bestellung 1303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.54 EUR
10+1.05 EUR
100+0.71 EUR
500+0.58 EUR
1000+0.53 EUR
2500+0.45 EUR
5000+0.41 EUR
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NVD3055-150T4G-VF01 NVD3055-150T4G-VF01 Hersteller : onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
16+1.1 EUR
100+0.74 EUR
500+0.61 EUR
1000+0.55 EUR
Mindestbestellmenge: 11
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NVD3055-150T4G-VF01 Hersteller : ON Semiconductor ntd3055-150-d.pdf Trans MOSFET N-CH 60V 9A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 292500 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH