Foto | Bezeichnung | Hersteller | Beschreibung |
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NCP133AMX090TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 0.9V Output current: 0.5A Case: XDFN6 Mounting: SMD Number of channels: 1 Voltage drop: 0.25V Input voltage: 0.8...5.5V Tolerance: ±1.5% Manufacturer series: NCP133 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
74LCX245BQX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; WQFN20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: WQFN20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74LCX245DWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LCX245DTG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LCX245DTR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LCX245DWR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: LCX Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC74LCX245MNTWG | ONSEMI |
![]() Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; QFN20; LCX Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS Mounting: SMD Case: QFN20 Manufacturer series: LCX Supply voltage: 1.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MUR2100EG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 2A; bulk; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Kind of package: bulk Case: DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MUR2100ERLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Case: DO41 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FCPF400N80Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.9A Power dissipation: 35.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCW68GLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 3951 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GLT3G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 120...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NC7S86M5X | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT23-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
auf Bestellung 2301 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7SZ86M5X | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC74A Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
auf Bestellung 1869 Stücke: Lieferzeit 14-21 Tag (e) |
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FJPF5027OTU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 800V; 3A; 40W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 800V Collector current: 3A Power dissipation: 40W Case: TO220FP Current gain: 15...30 Mounting: THT Kind of package: tube Frequency: 15MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74LVXT8051DTRG | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS Operating temperature: -55...125°C Case: TSSOP16 Supply voltage: 2...6V DC Type of integrated circuit: analog switch Number of channels: 1 Quiescent current: 160µA Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NCP302045MNTWG | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN31 5X5 Output current: 45A Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 6ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NCP302035MNTWG | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN31 5X5 Output current: 35A Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 6ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP3020ADR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; buck; 4.7÷40VDC Type of integrated circuit: PMIC Topology: buck Case: SO8 Output current: 130mA Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Frequency: 240...360kHz Operating voltage: 4.7...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP3020BDR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; buck; 4.7÷40VDC Type of integrated circuit: PMIC Topology: buck Case: SO8 Output current: 130mA Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Frequency: 530...670kHz Operating voltage: 4.7...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NCP302150MNTWG | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: MOSFET half-bridge Pulse fall time: 6ns Impulse rise time: 12ns Output current: 50A Case: PQFN31 5X5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAT25640VI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8 Operating voltage: 1.8...5.5V Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: SPI Kind of package: reel; tape Kind of interface: serial Access time: 40ns Memory: 64kb EEPROM Clock frequency: 20MHz Memory organisation: 8kx8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAT25640YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: SPI Memory organisation: 8kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDS8958B | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 6.4/-4.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20/±25V On-state resistance: 39/72mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NRVHP160SFT3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTMTSC4D3N15MC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8 Kind of package: reel; tape Pulsed drain current: 900A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Power dissipation: 293W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 174A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCH165N65S3R0-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 39nC Gate-source voltage: ±30V Pulsed drain current: 47.5A Drain current: 12.3A Power dissipation: 154W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTP055N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 96nC Gate-source voltage: ±30V Pulsed drain current: 132A Drain current: 47A Power dissipation: 305W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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ES3J | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 1.66W Capacitance: 45pF |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14001UBDG | ONSEMI |
![]() ![]() Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Kind of gate: NOR Case: SO14 Number of channels: quad; 4 Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 2 Supply voltage: 3...18V DC Kind of package: tube Family: HEF4000B Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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6N139M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington CTR@If: 500%@1.6mA Case: DIP8 Turn-on time: 25µs Turn-off time: 60µs Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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6N139SDM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 500-1600%@1.6mA Case: Gull wing 8 Slew rate: 10kV/μs Manufacturer series: 6N139M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NTD6416ANLT4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 74mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NTBLS4D0N15MC | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W Type of transistor: N-MOSFET Kind of channel: enhancement Case: H-PSOF8L Kind of package: reel; tape Mounting: SMD Gate charge: 90.4nC On-state resistance: 4.4mΩ Power dissipation: 316W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 187A Pulsed drain current: 2255A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
RB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Case: SOD523 Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Load current: 0.2A Max. forward voltage: 0.5V Max. forward impulse current: 1A Max. off-state voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NSVRB521S30T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Case: SOD523 Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Load current: 0.2A Max. forward voltage: 0.5V Max. forward impulse current: 1A Application: automotive industry Max. off-state voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NSVRB521S30T5G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Kind of package: reel; tape Case: SOD523 Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Load current: 0.2A Max. forward voltage: 0.5V Max. forward impulse current: 1A Application: automotive industry Max. off-state voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDP42AN15A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Mounting: THT Drain current: 24A On-state resistance: 0.107Ω Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: tube Gate charge: 39nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Case: TO220AB Drain-source voltage: 150V |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR20F30NXT5G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape Case: DSN0603-2 Max. off-state voltage: 30V Max. load current: 4A Max. forward voltage: 0.48V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 28A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
auf Bestellung 966 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS230LT3G | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape Max. load current: 4A |
auf Bestellung 2051 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1395ADR2G | ONSEMI |
![]() Description: IC: PMIC; resonant mode controller; 48.5kHz÷1.11MHz; Ch: 1; SO16 Case: SO16 Mounting: SMD Operating voltage: 9.3...20V DC Frequency: 48.5kHz...1.11MHz Type of integrated circuit: PMIC Number of channels: 1 Kind of integrated circuit: resonant mode controller Topology: push-pull; resonant LLC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC74VHCT132ADTRG | ONSEMI |
![]() Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT Manufacturer series: VHCT Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital Number of channels: 4 Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NAND Technology: CMOS; TTL Kind of integrated circuit: Schmitt trigger Family: VHCT Case: TSSOP14 Number of inputs: 2 Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
1SMB5940BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SZ1SMB5940BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MM3Z3V6T1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 6922 Stücke: Lieferzeit 14-21 Tag (e) |
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NTPF600N80S3Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 21A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 15.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTSM245ET1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 50A Semiconductor structure: single diode Case: POWERMITE Mounting: SMD Kind of package: reel; tape Application: automotive industry Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVTSM245ET3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 50A Semiconductor structure: single diode Case: POWERMITE Mounting: SMD Kind of package: reel; tape Application: automotive industry Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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QED223 | ONSEMI |
![]() Description: IR transmitter; 5mm; diffused,violet; 25mW; 30°; 1.7VDC; THT; 100mA Mounting: THT Operating voltage: 1.7V DC LED diameter: 5mm LED lens: diffused; violet LED current: 100mA Viewing angle: 30° Wavelength of peak sensitivity: 890nm Radiant power: 25mW Shape: round Type of diode: IR transmitter |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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QED223A4R0 | ONSEMI |
![]() Description: IR transmitter; 5mm; diffused,violet; 200W; 30°; 1.7VDC; THT; 100mA Mounting: THT Operating voltage: 1.7V DC LED diameter: 5mm LED lens: diffused; violet LED current: 100mA Viewing angle: 30° Wavelength of peak sensitivity: 890nm Radiant power: 200W Type of diode: IR transmitter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MOCD223R2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8 Case: SO8 Mounting: SMD Number of channels: 1 Turn-on time: 8µs Turn-off time: 55µs Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
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MMBZ5223BLT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA Case: SOT23 Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Leakage current: 75µA Power dissipation: 0.3W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMBZ52xxBLT1G Mounting: SMD |
auf Bestellung 2882 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5223BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMTS0D7N06CLTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 477A Pulsed drain current: 900A Power dissipation: 147.3W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.68mΩ Mounting: SMD Gate charge: 225nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MMBTA06WT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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MMBTA06LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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SMMBTA06LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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SMMBTA06WT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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2SC3647S-TD-E | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 759 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR2545CTG | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Max. forward voltage: 0.72V Heatsink thickness: 1.15...1.39mm Max. load current: 30A Max. forward impulse current: 150A |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP133AMX090TCG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.9V
Output current: 0.5A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Voltage drop: 0.25V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Manufacturer series: NCP133
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.9V
Output current: 0.5A
Case: XDFN6
Mounting: SMD
Number of channels: 1
Voltage drop: 0.25V
Input voltage: 0.8...5.5V
Tolerance: ±1.5%
Manufacturer series: NCP133
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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74LCX245BQX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; WQFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; WQFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: WQFN20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MC74LCX245DWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MC74LCX245DTG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MC74LCX245DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74LCX245DWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: LCX
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
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MC74LCX245MNTWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; QFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS; SMD; QFN20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
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MUR2100EG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; bulk; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; bulk; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Produkt ist nicht verfügbar
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MUR2100ERLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO41
Produkt ist nicht verfügbar
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FCPF400N80Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
BCW68GLT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3951 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
521+ | 0.14 EUR |
642+ | 0.11 EUR |
1147+ | 0.062 EUR |
1441+ | 0.05 EUR |
2513+ | 0.028 EUR |
2646+ | 0.027 EUR |
BCW68GLT3G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 120...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NC7S86M5X |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 2301 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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358+ | 0.2 EUR |
527+ | 0.14 EUR |
642+ | 0.11 EUR |
1034+ | 0.069 EUR |
1480+ | 0.048 EUR |
1568+ | 0.046 EUR |
NC7SZ86M5X |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 1869 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
544+ | 0.13 EUR |
610+ | 0.12 EUR |
633+ | 0.11 EUR |
1000+ | 0.1 EUR |
FJPF5027OTU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 40W
Case: TO220FP
Current gain: 15...30
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 3A
Power dissipation: 40W
Case: TO220FP
Current gain: 15...30
Mounting: THT
Kind of package: tube
Frequency: 15MHz
Produkt ist nicht verfügbar
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MC74LVXT8051DTRG |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Operating temperature: -55...125°C
Case: TSSOP16
Supply voltage: 2...6V DC
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 160µA
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Operating temperature: -55...125°C
Case: TSSOP16
Supply voltage: 2...6V DC
Type of integrated circuit: analog switch
Number of channels: 1
Quiescent current: 160µA
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Mounting: SMD
Produkt ist nicht verfügbar
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NCP302045MNTWG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 45A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 45A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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NCP302035MNTWG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 35A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN31 5X5
Output current: 35A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 6ns
Produkt ist nicht verfügbar
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NCP3020ADR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Topology: buck
Case: SO8
Output current: 130mA
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Frequency: 240...360kHz
Operating voltage: 4.7...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Topology: buck
Case: SO8
Output current: 130mA
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Frequency: 240...360kHz
Operating voltage: 4.7...40V DC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCP3020BDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Topology: buck
Case: SO8
Output current: 130mA
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Frequency: 530...670kHz
Operating voltage: 4.7...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; buck; 4.7÷40VDC
Type of integrated circuit: PMIC
Topology: buck
Case: SO8
Output current: 130mA
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Frequency: 530...670kHz
Operating voltage: 4.7...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP302150MNTWG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 50A
Case: PQFN31 5X5
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 50A
Case: PQFN31 5X5
Produkt ist nicht verfügbar
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CAT25640VI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Access time: 40ns
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of package: reel; tape
Kind of interface: serial
Access time: 40ns
Memory: 64kb EEPROM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
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CAT25640YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: SPI
Memory organisation: 8kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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FDS8958B |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 6.4/-4.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20/±25V
On-state resistance: 39/72mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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NRVHP160SFT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SOD123F; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Application: automotive industry
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NTMTSC4D3N15MC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
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FCH165N65S3R0-F155 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Gate-source voltage: ±30V
Pulsed drain current: 47.5A
Drain current: 12.3A
Power dissipation: 154W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Gate-source voltage: ±30V
Pulsed drain current: 47.5A
Drain current: 12.3A
Power dissipation: 154W
Produkt ist nicht verfügbar
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NTP055N65S3H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 96nC
Gate-source voltage: ±30V
Pulsed drain current: 132A
Drain current: 47A
Power dissipation: 305W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 96nC
Gate-source voltage: ±30V
Pulsed drain current: 132A
Drain current: 47A
Power dissipation: 305W
Produkt ist nicht verfügbar
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ES3J |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
160+ | 0.45 EUR |
182+ | 0.39 EUR |
252+ | 0.28 EUR |
265+ | 0.27 EUR |
MC14001UBDG | ![]() |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: tube
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: tube
Family: HEF4000B
Technology: CMOS
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6N139M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
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6N139SDM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
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NTD6416ANLT4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTBLS4D0N15MC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Case: H-PSOF8L
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 316W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 2255A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Case: H-PSOF8L
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 316W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 2255A
Polarisation: unipolar
Produkt ist nicht verfügbar
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RB521S30T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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NSVRB521S30T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Application: automotive industry
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Application: automotive industry
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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NSVRB521S30T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Application: automotive industry
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Kind of package: reel; tape
Case: SOD523
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Application: automotive industry
Max. off-state voltage: 30V
Produkt ist nicht verfügbar
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FDP42AN15A0 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Drain current: 24A
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Mounting: THT
Drain current: 24A
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO220AB
Drain-source voltage: 150V
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
24+ | 2.97 EUR |
NSR20F30NXT5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Case: DSN0603-2
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward voltage: 0.48V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 28A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Case: DSN0603-2
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward voltage: 0.48V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 28A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
137+ | 0.52 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
500+ | 0.31 EUR |
MBRS230LT3G | ![]() |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Max. load current: 4A
auf Bestellung 2051 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
168+ | 0.43 EUR |
206+ | 0.35 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
NCP1395ADR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 48.5kHz÷1.11MHz; Ch: 1; SO16
Case: SO16
Mounting: SMD
Operating voltage: 9.3...20V DC
Frequency: 48.5kHz...1.11MHz
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
Operating temperature: -40...125°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 48.5kHz÷1.11MHz; Ch: 1; SO16
Case: SO16
Mounting: SMD
Operating voltage: 9.3...20V DC
Frequency: 48.5kHz...1.11MHz
Type of integrated circuit: PMIC
Number of channels: 1
Kind of integrated circuit: resonant mode controller
Topology: push-pull; resonant LLC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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MC74VHCT132ADTRG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Manufacturer series: VHCT
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS; TTL
Kind of integrated circuit: Schmitt trigger
Family: VHCT
Case: TSSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; VHCT
Manufacturer series: VHCT
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Number of channels: 4
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NAND
Technology: CMOS; TTL
Kind of integrated circuit: Schmitt trigger
Family: VHCT
Case: TSSOP14
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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1SMB5940BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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SZ1SMB5940BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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MM3Z3V6T1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6922 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
587+ | 0.12 EUR |
1021+ | 0.07 EUR |
1330+ | 0.054 EUR |
1634+ | 0.044 EUR |
1977+ | 0.036 EUR |
2907+ | 0.025 EUR |
3497+ | 0.02 EUR |
3704+ | 0.019 EUR |
NTPF600N80S3Z |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 21A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 21A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 15.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NRVTSM245ET1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Produkt ist nicht verfügbar
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NRVTSM245ET3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Produkt ist nicht verfügbar
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QED223 |
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Hersteller: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 25mW; 30°; 1.7VDC; THT; 100mA
Mounting: THT
Operating voltage: 1.7V DC
LED diameter: 5mm
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Radiant power: 25mW
Shape: round
Type of diode: IR transmitter
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 25mW; 30°; 1.7VDC; THT; 100mA
Mounting: THT
Operating voltage: 1.7V DC
LED diameter: 5mm
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Radiant power: 25mW
Shape: round
Type of diode: IR transmitter
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
QED223A4R0 |
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Hersteller: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 200W; 30°; 1.7VDC; THT; 100mA
Mounting: THT
Operating voltage: 1.7V DC
LED diameter: 5mm
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Radiant power: 200W
Type of diode: IR transmitter
Category: IR LEDs
Description: IR transmitter; 5mm; diffused,violet; 200W; 30°; 1.7VDC; THT; 100mA
Mounting: THT
Operating voltage: 1.7V DC
LED diameter: 5mm
LED lens: diffused; violet
LED current: 100mA
Viewing angle: 30°
Wavelength of peak sensitivity: 890nm
Radiant power: 200W
Type of diode: IR transmitter
Produkt ist nicht verfügbar
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MOCD223R2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Case: SO8
Mounting: SMD
Number of channels: 1
Turn-on time: 8µs
Turn-off time: 55µs
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 2.5kV; SO8
Case: SO8
Mounting: SMD
Number of channels: 1
Turn-on time: 8µs
Turn-off time: 55µs
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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MMBZ5223BLT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Leakage current: 75µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Case: SOT23
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Leakage current: 75µA
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMBZ52xxBLT1G
Mounting: SMD
auf Bestellung 2882 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
705+ | 0.1 EUR |
1573+ | 0.045 EUR |
2500+ | 0.029 EUR |
2882+ | 0.024 EUR |
MMSZ5223BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
532+ | 0.13 EUR |
630+ | 0.11 EUR |
NTMTS0D7N06CLTXG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 477A
Pulsed drain current: 900A
Power dissipation: 147.3W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.68mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 477A; Idm: 900A; 147.3W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 477A
Pulsed drain current: 900A
Power dissipation: 147.3W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.68mΩ
Mounting: SMD
Gate charge: 225nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMBTA06WT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MMBTA06LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMMBTA06LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA06WT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2SC3647S-TD-E |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
106+ | 0.68 EUR |
197+ | 0.36 EUR |
209+ | 0.34 EUR |
MBR2545CTG | ![]() |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Max. forward voltage: 0.72V
Heatsink thickness: 1.15...1.39mm
Max. load current: 30A
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220-3; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Max. forward voltage: 0.72V
Heatsink thickness: 1.15...1.39mm
Max. load current: 30A
Max. forward impulse current: 150A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.4 EUR |