| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FDC6306P | ONSEMI |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.9A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.2nC |
Produkt ist nicht verfügbar |
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FDC640P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
Produkt ist nicht verfügbar |
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FDC6310P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 184mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDC6329L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Case: SuperSOT-6 On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 2.5...8V DC Control voltage: 1.5...8V DC Output current: 2.5A Type of integrated circuit: power switch Kind of output: P-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDC642P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Power dissipation: 1.2W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.105Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDC654P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDC6320C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 9/10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDC6326L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Case: SuperSOT-6 On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 3...20V DC Control voltage: 2.5...8V DC Output current: 1.8A Type of integrated circuit: power switch Kind of output: P-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NTGS4111PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 1.25W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NRVBBS20100CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Max. forward impulse current: 150A Max. forward voltage: 0.95V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 10A x2 Max. load current: 20A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: D2PAK Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
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| NCS2202AMUTBG | ONSEMI |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA Operating temperature: -40...105°C Input offset voltage: 10mV Type of integrated circuit: comparator Kind of output: open drain Number of comparators: 1 Input bias current: 1pA Application: automotive industry Kind of package: reel; tape Case: uDFN6 Operating voltage: 0.85...6V Kind of comparator: low-power Delay time: 1.08µs Mounting: SMT |
Produkt ist nicht verfügbar |
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QED223 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC Type of diode: IR transmitter LED diameter: 5mm Wavelength: 880nm LED lens: diffused; violet Radiant power: 25mW Viewing angle: 30° Mounting: THT Wavelength of peak sensitivity: 890nm Shape: round Operating voltage: 1.7V DC LED current: 100mA |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FDB2710 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 260W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 36.3mΩ Mounting: SMD Gate charge: 101nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMQ8205 | ONSEMI |
Category: Integrated circuits - others Description: IC: driver; single phase transistor bridge; ideal diode bridge Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: driver Technology: GreenBridge™ 2 Kind of package: reel; tape Case: WDFN12 Kind of integrated circuit: ideal diode bridge Topology: single phase transistor bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FDMQ8403 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12 Mounting: SMD Pulsed drain current: 12A Power dissipation: 17W Gate charge: 5nC Polarisation: unipolar Drain current: 6A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET x4 Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN12 On-state resistance: 191mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP4307FBSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCV21874DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV Type of integrated circuit: operational amplifier Bandwidth: 350kHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.1V/μs Integrated circuit features: rail-to-rail; zero-drift Input offset voltage: 0.045mV Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SZ1SMA5920BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SZ1SMA5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMJS0D7N03CGTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8 Mounting: SMD Pulsed drain current: 900A Power dissipation: 188W Gate charge: 147nC Polarisation: unipolar Drain current: 410A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK8 On-state resistance: 0.65mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NTB6410ANT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK Mounting: SMD Pulsed drain current: 305A Power dissipation: 188W Gate charge: 0.12µC Polarisation: unipolar Drain current: 76A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 13mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NTP6410ANG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3 Mounting: THT Pulsed drain current: 305A Power dissipation: 188W Gate charge: 0.12µC Polarisation: unipolar Drain current: 76A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO220-3 On-state resistance: 13mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQP4N20L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.4A Pulsed drain current: 15.2A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 5.2nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FDP032N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3 Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 3.3mΩ Mounting: THT Pulsed drain current: 844A Power dissipation: 263W Gate charge: 111nC Polarisation: unipolar Drain current: 211A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC74ACT573DWG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Kind of package: tube Manufacturer series: ACT Technology: TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC74ACT573DTR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Kind of package: reel; tape Manufacturer series: ACT Technology: TTL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MC74ACT573DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Family: ACT Kind of output: 3-state Kind of package: reel; tape Manufacturer series: ACT Technology: TTL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FCD3400N80Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK Mounting: SMD Pulsed drain current: 4A Power dissipation: 32W Gate charge: 9.6nC Polarisation: unipolar Drain current: 1.2A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 3.4Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NTD18N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 55W Case: DPAK Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FCH043N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47.5A Pulsed drain current: 225A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 163nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSR0230M2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape Max. forward impulse current: 1A Max. forward voltage: 0.5V Max. off-state voltage: 30V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD723 Type of diode: Schottky switching Mounting: SMD |
auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NSR10F40NXT5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape Max. forward impulse current: 18A Max. forward voltage: 0.49V Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Case - inch: 0502 Mounting: SMD |
auf Bestellung 1558 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NSR0240V2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape Max. forward impulse current: 2A Max. forward voltage: 0.7V Application: automotive industry Max. off-state voltage: 40V Load current: 0.25A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD523 Type of diode: Schottky switching Mounting: SMD |
auf Bestellung 2693 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDB86135 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 176A Pulsed drain current: 704A Power dissipation: 227W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCV33072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 2439 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NCV33072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; 1.6÷5.5VDC,1.8÷5.5VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| D-STPR-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: AMIS30543 Type of accessories for development kits: expansion board Kit contents: prototype board Components: AMIS30543 Connection: pin strips; screw development kits accessories features: Arduino Shield compatible; stepper motor driver Interface: I2C; I2C - Slave; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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KSB1366GTU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP Case: TO220FP Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: PNP Current gain: 150...320 Kind of package: tube Frequency: 9MHz Collector current: 3A Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBT3906 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FOD060L | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Case: SO8 Slew rate: 25kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FOD060LR2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Case: SO8 Slew rate: 25kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSVBC857CWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Case: SC70; SOT323 Mounting: SMD Frequency: 100MHz Current gain: 420...800 Kind of package: reel; tape Power dissipation: 0.15W Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MBRA120ET3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.54V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NC7SZ04P5X-L22057 | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 1; IN: 1; SMD; SC88A; 7SZ; -40÷85°C; 2uA Manufacturer series: 7SZ Operating temperature: -40...85°C Type of integrated circuit: digital Quiescent current: 2µA Number of inputs: 1 Case: SC88A Kind of integrated circuit: inverter Number of channels: 1 Mounting: SMD |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCV8702MX28TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.2A Case: XDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP160AMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 2.8V Output current: 0.25A Case: XDFN4 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP160 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP160BMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 2.8V Output current: 0.25A Case: XDFN4 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP160 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP160BMX285TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 250mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 2.85V Output current: 0.25A Case: XDFN4 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP160 |
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| NCP161BMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 2.8V Output current: 0.45A Case: XDFN4 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP161 |
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| NCP167AMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 700mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.7A Case: XDFN4 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP167 |
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Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP167AMX285TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 700mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.85V Output current: 0.7A Case: XDFN4 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Manufacturer series: NCP167 |
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| NCP186AMX280TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1A; XDFN8; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.17V Output voltage: 2.8V Output current: 1A Case: XDFN8 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 2 Input voltage: 1.8...5.5V Manufacturer series: NCP186x |
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| NCP186BMX280TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.4A; XDFN8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.17V Output voltage: 2.8V Output current: 1.4A Case: XDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 2 Input voltage: 1.8...5.5V Manufacturer series: NCP186x |
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Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP703MX28TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 300mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.8V Output current: 0.3A Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP703 |
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| NCP151AAMX280180TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,2.8V; 300mA; XDFN4 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.8V; 2.8V Output current: 0.3A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 2 Input voltage: 1.7...5.5V Manufacturer series: NCP151 |
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| NCV8160AMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.25A; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.25A Case: XDFN4 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV8161AMX280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.45A; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.45A Case: XDFN4 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV8752AMX28TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.2A Case: XDFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NTMFS5C442NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 42W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Power dissipation: 42W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDC6306P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.9A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.2nC
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| FDC640P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 13nC
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| FDC6310P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDC6329L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 2.5...8V DC
Control voltage: 1.5...8V DC
Output current: 2.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Produkt ist nicht verfügbar
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| FDC642P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FDC654P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDC6320C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDC6326L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 2.5...8V DC
Output current: 1.8A
Type of integrated circuit: power switch
Kind of output: P-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTGS4111PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NRVBBS20100CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A x2
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Max. forward impulse current: 150A
Max. forward voltage: 0.95V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 10A x2
Max. load current: 20A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: D2PAK
Type of diode: Schottky rectifying
Mounting: SMD
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| NCS2202AMUTBG |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 1.08us; 0.85÷6V; SMT; uDFN6; 1pA
Operating temperature: -40...105°C
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Number of comparators: 1
Input bias current: 1pA
Application: automotive industry
Kind of package: reel; tape
Case: uDFN6
Operating voltage: 0.85...6V
Kind of comparator: low-power
Delay time: 1.08µs
Mounting: SMT
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| QED223 |
|
Hersteller: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 880nm
LED lens: diffused; violet
Radiant power: 25mW
Viewing angle: 30°
Mounting: THT
Wavelength of peak sensitivity: 890nm
Shape: round
Operating voltage: 1.7V DC
LED current: 100mA
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,violet; 25mW; 30°; 1.7VDC
Type of diode: IR transmitter
LED diameter: 5mm
Wavelength: 880nm
LED lens: diffused; violet
Radiant power: 25mW
Viewing angle: 30°
Mounting: THT
Wavelength of peak sensitivity: 890nm
Shape: round
Operating voltage: 1.7V DC
LED current: 100mA
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
| FDB2710 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 260W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 36.3mΩ
Mounting: SMD
Gate charge: 101nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBTA06LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| FDMQ8205 |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of package: reel; tape
Case: WDFN12
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
Category: Integrated circuits - others
Description: IC: driver; single phase transistor bridge; ideal diode bridge
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: driver
Technology: GreenBridge™ 2
Kind of package: reel; tape
Case: WDFN12
Kind of integrated circuit: ideal diode bridge
Topology: single phase transistor bridge
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| FDMQ8403 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 17W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET x4
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN12
On-state resistance: 191mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 100V; 6A; Idm: 12A; 17W; WDFN12
Mounting: SMD
Pulsed drain current: 12A
Power dissipation: 17W
Gate charge: 5nC
Polarisation: unipolar
Drain current: 6A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET x4
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN12
On-state resistance: 191mΩ
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| NCP4307FBSNT1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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| NCV21874DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 4; 1.8÷5.5VDC; SO14; 0.045mV
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
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| SZ1SMA5920BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.2V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| SZ1SMA5919BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| NTMJS0D7N03CGTWG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 410A; Idm: 900A; 188W; LFPAK8
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 188W
Gate charge: 147nC
Polarisation: unipolar
Drain current: 410A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK8
On-state resistance: 0.65mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTB6410ANT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Mounting: SMD
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 13mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; D2PAK
Mounting: SMD
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 13mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTP6410ANG |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Mounting: THT
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
On-state resistance: 13mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; Idm: 305A; 188W; TO220-3
Mounting: THT
Pulsed drain current: 305A
Power dissipation: 188W
Gate charge: 0.12µC
Polarisation: unipolar
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO220-3
On-state resistance: 13mΩ
Produkt ist nicht verfügbar
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| FQP4N20L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 5.2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FDP032N08B-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Pulsed drain current: 844A
Power dissipation: 263W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 211A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Pulsed drain current: 844A
Power dissipation: 263W
Gate charge: 111nC
Polarisation: unipolar
Drain current: 211A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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| MC74ACT573DWG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
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| MC74ACT573DTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74ACT573DWR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: ACT
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: ACT
Technology: TTL
Produkt ist nicht verfügbar
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| FCD3400N80Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 32W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 3.4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.2A; Idm: 4A; 32W; DPAK
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 32W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 3.4Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NTD18N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| FCH043N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47.5A
Pulsed drain current: 225A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47.5A; Idm: 225A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47.5A
Pulsed drain current: 225A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Kind of channel: enhancement
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| NSR0230M2T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD723
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD723; SMD; 30V; 0.2A; reel,tape
Max. forward impulse current: 1A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD723
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 269 Stücke:
Lieferzeit 14-21 Tag (e)
| NSR10F40NXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Max. forward impulse current: 18A
Max. forward voltage: 0.49V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case - inch: 0502
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Max. forward impulse current: 18A
Max. forward voltage: 0.49V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Case - inch: 0502
Mounting: SMD
auf Bestellung 1558 Stücke:
Lieferzeit 14-21 Tag (e)
| NSR0240V2T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Max. forward impulse current: 2A
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD523
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Max. forward impulse current: 2A
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 0.25A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD523
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
| FDB86135 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 176A
Pulsed drain current: 704A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 176A; Idm: 704A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 176A
Pulsed drain current: 704A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 89nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NCV33072DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 2439 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV33072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; 1.6÷5.5VDC,1.8÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; 1.6÷5.5VDC,1.8÷5.5VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.6...5.5V DC; 1.8...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
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| D-STPR-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: AMIS30543
Connection: pin strips; screw
development kits accessories features: Arduino Shield compatible; stepper motor driver
Interface: I2C; I2C - Slave; SPI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: AMIS30543
Connection: pin strips; screw
development kits accessories features: Arduino Shield compatible; stepper motor driver
Interface: I2C; I2C - Slave; SPI
Produkt ist nicht verfügbar
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| KSB1366GTU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Case: TO220FP
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 150...320
Kind of package: tube
Frequency: 9MHz
Collector current: 3A
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Case: TO220FP
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 150...320
Kind of package: tube
Frequency: 9MHz
Collector current: 3A
Mounting: THT
Produkt ist nicht verfügbar
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| MMBT3906 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| FOD060L |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Slew rate: 25kV/μs
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FOD060LR2 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 3.75kV; SO8; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Slew rate: 25kV/μs
Produkt ist nicht verfügbar
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| NSVBC857CWT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SC70; SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SC70; SOT323
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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| MBRA120ET3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
| NC7SZ04P5X-L22057 |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; SMD; SC88A; 7SZ; -40÷85°C; 2uA
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Type of integrated circuit: digital
Quiescent current: 2µA
Number of inputs: 1
Case: SC88A
Kind of integrated circuit: inverter
Number of channels: 1
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; SMD; SC88A; 7SZ; -40÷85°C; 2uA
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Type of integrated circuit: digital
Quiescent current: 2µA
Number of inputs: 1
Case: SC88A
Kind of integrated circuit: inverter
Number of channels: 1
Mounting: SMD
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV8702MX28TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCP160AMX280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
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| NCP160BMX280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.8V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
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Mindestbestellmenge: 5 Stücke
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| NCP160BMX285TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 250mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.85V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 250mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 2.85V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
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| NCP161BMX280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP161
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 450mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.8V
Output current: 0.45A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP161
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| NCP167AMX280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP167
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP167
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Mindestbestellmenge: 5000 Stücke
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| NCP167AMX285TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.85V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP167
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 700mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.85V
Output current: 0.7A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Manufacturer series: NCP167
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| NCP186AMX280TAG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1A; XDFN8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.17V
Output voltage: 2.8V
Output current: 1A
Case: XDFN8
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 2
Input voltage: 1.8...5.5V
Manufacturer series: NCP186x
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1A; XDFN8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.17V
Output voltage: 2.8V
Output current: 1A
Case: XDFN8
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 2
Input voltage: 1.8...5.5V
Manufacturer series: NCP186x
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| NCP186BMX280TAG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.4A; XDFN8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.17V
Output voltage: 2.8V
Output current: 1.4A
Case: XDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 2
Input voltage: 1.8...5.5V
Manufacturer series: NCP186x
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.4A; XDFN8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.17V
Output voltage: 2.8V
Output current: 1.4A
Case: XDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 2
Input voltage: 1.8...5.5V
Manufacturer series: NCP186x
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| NCP703MX28TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP703
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 300mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.3A
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP703
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| NCP151AAMX280180TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,2.8V; 300mA; XDFN4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V; 2.8V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 1.7...5.5V
Manufacturer series: NCP151
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,2.8V; 300mA; XDFN4
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V; 2.8V
Output current: 0.3A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 1.7...5.5V
Manufacturer series: NCP151
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| NCV8160AMX280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.25A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.25A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.25A
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8161AMX280TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.45A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.45A
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.45A; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.45A
Case: XDFN4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV8752AMX28TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.2A
Case: XDFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NTMFS5C442NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 42W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 42W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 42W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Power dissipation: 42W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 900A
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Mindestbestellmenge: 1500 Stücke
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