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NSVRB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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NSVRB751S40T5G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74VHC1G07DTT1G
+1
 		MC74VHC1G07DTT1G ONSEMI mc74vhc1g07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSSOP5; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
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FDBL86063-F085 ONSEMI fdbl86063_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDBL86063 ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
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ESD8104MUTAG ONSEMI esd8104-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
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FDD86252 FDD86252 ONSEMI fdd86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2357 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
59+1.22 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 55
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4N35M 4N35M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 1030 Stücke:
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100+0.72 EUR
134+0.53 EUR
161+0.44 EUR
185+0.39 EUR
216+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 100
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NUP1301ML3T1G NUP1301ML3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BE9367D5A540CE&compId=NUP1301ML3T1G.PDF?ci_sign=dd30dc4b5dd75dbe50d75d5d76913a96e45f8f00 Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
313+0.23 EUR
443+0.16 EUR
725+0.099 EUR
Mindestbestellmenge: 209
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SZNUP1301ML3T1G ONSEMI nup1301ml3t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Application: automotive industry
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MMBTA05 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D673634A4B4A50&compId=MMBTA05-DTE.pdf?ci_sign=3a56488597b361ddfe0f3b388233e2969840f1ff Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCV8460ADR2G NCV8460ADR2G ONSEMI ncv8460-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 6...36V DC
Application: automotive industry
Produkt ist nicht verfügbar
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FDD3672 FDD3672 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE60BFDFDD5E28&compId=FDD3672.pdf?ci_sign=2f119ab2145af13489fbc2210acb4aeb21f21821 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1554 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
49+1.49 EUR
55+1.3 EUR
59+1.23 EUR
500+1.2 EUR
1000+1.19 EUR
Mindestbestellmenge: 47
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NCP1615A1DR2G NCP1615A1DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBB9A327217EA0C7&compId=NCP1615.PDF?ci_sign=a32e2900a4ee2a9584fe1c05d57b8e6e33e0c308 Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO14; -40÷125°C; reel,tape; 9.5÷28VDC
Mounting: SMD
Operating voltage: 9.5...28V DC
Frequency: 26kHz
Output current: -500...800mA
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SO14
Kind of integrated circuit: PFC controller
Topology: boost
Operating temperature: -40...125°C
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
52+1.4 EUR
56+1.29 EUR
58+1.24 EUR
59+1.22 EUR
100+1.17 EUR
Mindestbestellmenge: 46
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NC7S32M5X NC7S32M5X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE23AD9F3B8745&compId=NC7S32.pdf?ci_sign=8f09cc14a4feb41de49d4a0f2e536f860dd141e9 Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
531+0.13 EUR
676+0.11 EUR
758+0.094 EUR
913+0.078 EUR
1180+0.061 EUR
1345+0.053 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 531
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NL17SG32DFT2G NL17SG32DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D5E80D3&compId=NL17SG32-D.pdf?ci_sign=be6677f1d2178d34a34ec5ef3db1ff9bbad7cbf1 Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 209
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NC7SZ332P6X NC7SZ332P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAACBC4B6D7E6DC0C7&compId=NC7SZ332.pdf?ci_sign=9ba9041c243bd3e67ad2d3bc8237cc5f04bdb657 Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
332+0.22 EUR
414+0.17 EUR
575+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 193
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NTMFS5C670NLT1G NTMFS5C670NLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 161 Stücke:
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23+3.17 EUR
36+2.02 EUR
47+1.53 EUR
50+1.46 EUR
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BZX84B5V1LT1G BZX84B5V1LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 description Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX84B
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
551+0.13 EUR
782+0.092 EUR
1137+0.063 EUR
1337+0.053 EUR
1715+0.041 EUR
Mindestbestellmenge: 551
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SZBZX84B5V1LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX84B
Application: automotive industry
Produkt ist nicht verfügbar
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BD787G BD787G ONSEMI bd787-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
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NTPF150N65S3HF ONSEMI ntpf150n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: TO220FP
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
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NCP160AFCS280T2G ONSEMI ncp160-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: WLCSP4
Operating temperature: -40...125°C
Output voltage: 2.8V
Output current: 0.25A
Voltage drop: 0.16V
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
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FSFM300N FSFM300N ONSEMI fsfm300-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.6A; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 71...83%
Power: 30W
Application: SMPS
Operating voltage: 8...19V DC
Produkt ist nicht verfügbar
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NCN1188MUTAG ONSEMI ncn1188-d.pdf Category: Analog multiplexers and switches
Description: IC: interface; USB switch; UQFN12; 2.7÷5.5VDC; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: USB switch
Case: UQFN12
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BYW51-200G BYW51-200G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688601DFD2A6745&compId=BYW51-200.PDF?ci_sign=319def4bcd2d59bc2ef7e4cc6620d39223e1c244 Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Features of semiconductor devices: ultrafast switching
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
44+1.63 EUR
50+1.46 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 35
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NTP165N65S3H NTP165N65S3H ONSEMI ntp165n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Drain current: 19A
Power dissipation: 142W
Pulsed drain current: 53A
Gate-source voltage: ±30V
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
20+3.72 EUR
21+3.52 EUR
Mindestbestellmenge: 18
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MMBFJ177 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Produkt ist nicht verfügbar
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FDMS8820 ONSEMI fdms8820-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 101A
Pulsed drain current: 634A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS007N08LC ONSEMI fdms007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NUP4301MR6T1G NUP4301MR6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2 Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
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376+0.19 EUR
575+0.12 EUR
642+0.11 EUR
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PACDN042Y3R PACDN042Y3R ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEE1A18029E0CE&compId=PACDN04x.PDF?ci_sign=d9ce101fbe316f81d35daf81cc54beb867ef9674 Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
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379+0.19 EUR
463+0.15 EUR
695+0.1 EUR
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MC14021BDG MC14021BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B969C4837DA11C&compId=MC14021BDG.PDF?ci_sign=9e48a1239b6406f13955604f2f85489a19a8714e Category: Shift registers
Description: IC: digital; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Technology: CMOS
Mounting: SMD
Case: SO16
Produkt ist nicht verfügbar
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BUV21G BUV21G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBDA85AA12DC469&compId=BUV21.PDF?ci_sign=be3cf637e14261f974c3814117a152361b145c98 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Collector-emitter voltage: 250V
Collector current: 40A
Type of transistor: NPN
Power dissipation: 250W
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Case: TO3
auf Bestellung 56 Stücke:
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FDD4243 FDD4243 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE6CB98F2EFE28&compId=FDD4243.pdf?ci_sign=81c6a5a0982d75ac86fda81d4817681cf9a40d14 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
auf Bestellung 624 Stücke:
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125+0.57 EUR
133+0.54 EUR
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CAT4139TD-GT3 CAT4139TD-GT3 ONSEMI Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uout: 22V; TSOT23-5; SMD; 1MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output voltage: 22V
Case: TSOT23-5
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Integrated circuit features: PWM
Supply voltage: 2.8...5.5V DC
Produkt ist nicht verfügbar
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NCP4328ASNT1G ONSEMI ncp4328-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: TSOP5
Operating voltage: 2.5...40V DC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4328BSNT1G ONSEMI ncp4328-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Frequency: 1kHz
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: TSOP6
Operating voltage: 2.5...40V DC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCV321SN3T1G NCV321SN3T1G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5V; Ch: 1; TSOP5; reel,tape
Mounting: SMT
Number of channels: 1
Bandwidth: 1MHz
Input offset voltage: 1.7mV
Application: automotive industry
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Slew rate: 1V/μs
Input offset current: 1nA
Input bias current: 1pA
Operating temperature: -40...85°C
Case: TSOP5
Operating voltage: 2.7...5V
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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MC14021BDR2G MC14021BDR2G ONSEMI mc14014b-d.pdf Category: Shift registers
Description: IC: digital; CMOS; SMD; SO16; 3÷18VDC; -55÷125°C; reel,tape; 600uA
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 600µA
Produkt ist nicht verfügbar
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NCV7327D10R2G NCV7327D10R2G ONSEMI ncv7327-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; SO8; reel,tape
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5...18V DC
Type of integrated circuit: interface
Interface: LIN
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
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NCV7327MW0R2G ONSEMI ncv7327-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Operating temperature: -40...150°C
Case: DFNW8
Supply voltage: 5...18V DC
Type of integrated circuit: interface
Interface: LIN
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
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MC74HCT273ADTR2G MC74HCT273ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB83820&compId=MC74HCT273A-D.pdf?ci_sign=15d38839052b4881f5c79e14d37e91abe6ef52c5 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
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MC74HCT273ADWG MC74HCT273ADWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB83820&compId=MC74HCT273A-D.pdf?ci_sign=15d38839052b4881f5c79e14d37e91abe6ef52c5 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
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MC74HCT273ADWR2G MC74HCT273ADWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB83820&compId=MC74HCT273A-D.pdf?ci_sign=15d38839052b4881f5c79e14d37e91abe6ef52c5 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
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MM74HCT273MTCX MM74HCT273MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADA5820&compId=MM74HCT273-D.pdf?ci_sign=f0c420266c62f05bd2e5411028d818a67b7c7d7c Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
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MM74HCT273WMX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63478C805A0D3&compId=MM74HCT273-D.pdf?ci_sign=eaf8130b9678bb300fd6e5cc5b6261d8ccb30b8a Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MC14029BDR2G MC14029BDR2G ONSEMI mc14029b-d.pdf Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Operating temperature: -55...125°C
Case: SO16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Mounting: SMD
Produkt ist nicht verfügbar
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NLV14029BDR2G NLV14029BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E635907E2B20D3&compId=MC14029B-D.pdf?ci_sign=c61d2d404c508ce50393cb337aab504ab9f7169c Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Mounting: SMD
Produkt ist nicht verfügbar
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FDBL9403-F085T6 ONSEMI fdbl9403-f085t6-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Mounting: SMD
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 0.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 79.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: H-PSOF8L
Produkt ist nicht verfügbar
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NTZD3152PT1G NTZD3152PT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A468CDB64C745&compId=NTZD3152P.PDF?ci_sign=bebe4c44be257e5f5e46cd20d05cd246bd216720 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -430mA
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1830 Stücke:
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338+0.21 EUR
477+0.15 EUR
500+0.14 EUR
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NTMTS1D2N08H ONSEMI ntmts1d2n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D5N08H ONSEMI ntmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NTMTS1D6N10MCTXG ONSEMI ntmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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FDMA7672 ONSEMI fdma7672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ5247BT1G MMSZ5247BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Manufacturer series: MMSZ52xxB
Semiconductor structure: single diode
Zener voltage: 17V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123
Tolerance: ±5%
auf Bestellung 5631 Stücke:
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758+0.094 EUR
1127+0.063 EUR
1348+0.053 EUR
2058+0.035 EUR
2243+0.032 EUR
2370+0.03 EUR
Mindestbestellmenge: 556
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MUR880EG MUR880EG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E794107D604469&compId=MUR880EG.PDF?ci_sign=ffe8358acb0ce90c0c094f67eb8605752f5004cb Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
auf Bestellung 50 Stücke:
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50+1.43 EUR
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NSVRB751S40T1G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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NSVRB751S40T5G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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FCB125N65S3 fcb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTPF125N65S3H ntpf125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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FCMT125N65S3 fcmt125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC1G07DTT1G mc74vhc1g07-d.pdf
MC74VHC1G07DTT1G
+1
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSSOP5; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
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FDBL86063-F085 fdbl86063_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDBL86063
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD8104MUTAG esd8104-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
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FDD86252 fdd86252-d.pdf
FDD86252
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
59+1.22 EUR
72+1 EUR
76+0.94 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
4N35M pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283
4N35M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
134+0.53 EUR
161+0.44 EUR
185+0.39 EUR
216+0.33 EUR
228+0.31 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
NUP1301ML3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BE9367D5A540CE&compId=NUP1301ML3T1G.PDF?ci_sign=dd30dc4b5dd75dbe50d75d5d76913a96e45f8f00
NUP1301ML3T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
443+0.16 EUR
725+0.099 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
SZNUP1301ML3T1G nup1301ml3t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA05 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D673634A4B4A50&compId=MMBTA05-DTE.pdf?ci_sign=3a56488597b361ddfe0f3b388233e2969840f1ff
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCV8460ADR2G ncv8460-d.pdf
NCV8460ADR2G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 6...36V DC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD3672 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE60BFDFDD5E28&compId=FDD3672.pdf?ci_sign=2f119ab2145af13489fbc2210acb4aeb21f21821
FDD3672
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1554 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
49+1.49 EUR
55+1.3 EUR
59+1.23 EUR
500+1.2 EUR
1000+1.19 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
NCP1615A1DR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBB9A327217EA0C7&compId=NCP1615.PDF?ci_sign=a32e2900a4ee2a9584fe1c05d57b8e6e33e0c308
NCP1615A1DR2G
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO14; -40÷125°C; reel,tape; 9.5÷28VDC
Mounting: SMD
Operating voltage: 9.5...28V DC
Frequency: 26kHz
Output current: -500...800mA
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SO14
Kind of integrated circuit: PFC controller
Topology: boost
Operating temperature: -40...125°C
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
52+1.4 EUR
56+1.29 EUR
58+1.24 EUR
59+1.22 EUR
100+1.17 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
NC7S32M5X pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE23AD9F3B8745&compId=NC7S32.pdf?ci_sign=8f09cc14a4feb41de49d4a0f2e536f860dd141e9
NC7S32M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
531+0.13 EUR
676+0.11 EUR
758+0.094 EUR
913+0.078 EUR
1180+0.061 EUR
1345+0.053 EUR
1583+0.045 EUR
1673+0.043 EUR
Mindestbestellmenge: 531
Im Einkaufswagen  Stück im Wert von  UAH
NL17SG32DFT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D5E80D3&compId=NL17SG32-D.pdf?ci_sign=be6677f1d2178d34a34ec5ef3db1ff9bbad7cbf1
NL17SG32DFT2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
1025+0.07 EUR
1083+0.066 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ332P6X pVersion=0046&contRep=ZT&docId=005056AB90B41EDAACBC4B6D7E6DC0C7&compId=NC7SZ332.pdf?ci_sign=9ba9041c243bd3e67ad2d3bc8237cc5f04bdb657
NC7SZ332P6X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
332+0.22 EUR
414+0.17 EUR
575+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5C670NLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87
NTMFS5C670NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
36+2.02 EUR
47+1.53 EUR
50+1.46 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BZX84B5V1LT1G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84B5V1LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX84B
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
551+0.13 EUR
782+0.092 EUR
1137+0.063 EUR
1337+0.053 EUR
1715+0.041 EUR
Mindestbestellmenge: 551
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84B5V1LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX84B
Application: automotive industry
Produkt ist nicht verfügbar
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BD787G bd787-d.pdf
BD787G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
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NTPF150N65S3HF ntpf150n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: TO220FP
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
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NCP160AFCS280T2G ncp160-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 250mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: WLCSP4
Operating temperature: -40...125°C
Output voltage: 2.8V
Output current: 0.25A
Voltage drop: 0.16V
Input voltage: 1.9...5.5V
Manufacturer series: NCP160
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Produkt ist nicht verfügbar
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FSFM300N fsfm300-d.pdf
FSFM300N
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.6A; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.6A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 2.2Ω
Duty cycle factor: 71...83%
Power: 30W
Application: SMPS
Operating voltage: 8...19V DC
Produkt ist nicht verfügbar
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NCN1188MUTAG ncn1188-d.pdf
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: interface; USB switch; UQFN12; 2.7÷5.5VDC; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: USB switch
Case: UQFN12
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW51-200G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688601DFD2A6745&compId=BYW51-200.PDF?ci_sign=319def4bcd2d59bc2ef7e4cc6620d39223e1c244
BYW51-200G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward impulse current: 100A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Features of semiconductor devices: ultrafast switching
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
44+1.63 EUR
50+1.46 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
NTP165N65S3H ntp165n65s3h-d.pdf
NTP165N65S3H
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Drain current: 19A
Power dissipation: 142W
Pulsed drain current: 53A
Gate-source voltage: ±30V
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
20+3.72 EUR
21+3.52 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
MMBFJ177 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Produkt ist nicht verfügbar
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FDMS8820 fdms8820-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 101A
Pulsed drain current: 634A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS007N08LC fdms007n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4301MR6T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2
NUP4301MR6T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Number of channels: 4
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
246+0.29 EUR
288+0.25 EUR
376+0.19 EUR
575+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
PACDN042Y3R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEE1A18029E0CE&compId=PACDN04x.PDF?ci_sign=d9ce101fbe316f81d35daf81cc54beb867ef9674
PACDN042Y3R
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
auf Bestellung 2172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
332+0.22 EUR
379+0.19 EUR
463+0.15 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
MC14021BDG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B969C4837DA11C&compId=MC14021BDG.PDF?ci_sign=9e48a1239b6406f13955604f2f85489a19a8714e
MC14021BDG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Technology: CMOS
Mounting: SMD
Case: SO16
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUV21G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBDA85AA12DC469&compId=BUV21.PDF?ci_sign=be3cf637e14261f974c3814117a152361b145c98
BUV21G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO3
Collector-emitter voltage: 250V
Collector current: 40A
Type of transistor: NPN
Power dissipation: 250W
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Case: TO3
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+22.32 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDD4243 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE6CB98F2EFE28&compId=FDD4243.pdf?ci_sign=81c6a5a0982d75ac86fda81d4817681cf9a40d14
FDD4243
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
On-state resistance: 69mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: -40V
Drain current: -14A
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
73+0.99 EUR
125+0.57 EUR
133+0.54 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CAT4139TD-GT3
CAT4139TD-GT3
Hersteller: ONSEMI
Category: LED drivers
Description: Driver; DC/DC converter,LED driver; Uout: 22V; TSOT23-5; SMD; 1MHz
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter; LED driver
Output voltage: 22V
Case: TSOT23-5
Mounting: SMD
Frequency: 1MHz
Topology: boost
Number of channels: 1
Operating temperature: -40...85°C
Integrated circuit features: PWM
Supply voltage: 2.8...5.5V DC
Produkt ist nicht verfügbar
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NCP4328ASNT1G ncp4328-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: TSOP5
Operating voltage: 2.5...40V DC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCP4328BSNT1G ncp4328-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Frequency: 1kHz
Mounting: SMD
Number of channels: 1
Operating temperature: -40...125°C
Case: TSOP6
Operating voltage: 2.5...40V DC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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NCV321SN3T1G lmv321-d.pdf
NCV321SN3T1G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; 2.7÷5V; Ch: 1; TSOP5; reel,tape
Mounting: SMT
Number of channels: 1
Bandwidth: 1MHz
Input offset voltage: 1.7mV
Application: automotive industry
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Slew rate: 1V/μs
Input offset current: 1nA
Input bias current: 1pA
Operating temperature: -40...85°C
Case: TSOP5
Operating voltage: 2.7...5V
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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MC14021BDR2G mc14014b-d.pdf
MC14021BDR2G
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; CMOS; SMD; SO16; 3÷18VDC; -55÷125°C; reel,tape; 600uA
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 600µA
Produkt ist nicht verfügbar
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NCV7327D10R2G ncv7327-d.pdf
NCV7327D10R2G
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; SO8; reel,tape
Operating temperature: -40...150°C
Case: SO8
Supply voltage: 5...18V DC
Type of integrated circuit: interface
Interface: LIN
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
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NCV7327MW0R2G ncv7327-d.pdf
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷18VDC; LIN; SMD; DFNW8; reel,tape
Operating temperature: -40...150°C
Case: DFNW8
Supply voltage: 5...18V DC
Type of integrated circuit: interface
Interface: LIN
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT273ADTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB83820&compId=MC74HCT273A-D.pdf?ci_sign=15d38839052b4881f5c79e14d37e91abe6ef52c5
MC74HCT273ADTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT273ADWG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB83820&compId=MC74HCT273A-D.pdf?ci_sign=15d38839052b4881f5c79e14d37e91abe6ef52c5
MC74HCT273ADWG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
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MC74HCT273ADWR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FB83820&compId=MC74HCT273A-D.pdf?ci_sign=15d38839052b4881f5c79e14d37e91abe6ef52c5
MC74HCT273ADWR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT273MTCX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B6B5CADA5820&compId=MM74HCT273-D.pdf?ci_sign=f0c420266c62f05bd2e5411028d818a67b7c7d7c
MM74HCT273MTCX
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HCT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT273WMX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63478C805A0D3&compId=MM74HCT273-D.pdf?ci_sign=eaf8130b9678bb300fd6e5cc5b6261d8ccb30b8a
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MC14029BDR2G mc14029b-d.pdf
MC14029BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Operating temperature: -55...125°C
Case: SO16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NLV14029BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E635907E2B20D3&compId=MC14029B-D.pdf?ci_sign=c61d2d404c508ce50393cb337aab504ab9f7169c
NLV14029BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Operating temperature: -55...125°C
Case: SOIC16
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Mounting: SMD
Produkt ist nicht verfügbar
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FDBL9403-F085T6 fdbl9403-f085t6-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Mounting: SMD
Drain-source voltage: 40V
Drain current: 300A
On-state resistance: 0.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 79.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: H-PSOF8L
Produkt ist nicht verfügbar
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NTZD3152PT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A468CDB64C745&compId=NTZD3152P.PDF?ci_sign=bebe4c44be257e5f5e46cd20d05cd246bd216720
NTZD3152PT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -430mA
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
269+0.27 EUR
338+0.21 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
NTMTS1D2N08H ntmts1d2n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMTS1D5N08H ntmts1d5n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMTS1D6N10MCTXG ntmts1d6n10mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMA7672 fdma7672-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMSZ5247BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5247BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 17V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Manufacturer series: MMSZ52xxB
Semiconductor structure: single diode
Zener voltage: 17V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123
Tolerance: ±5%
auf Bestellung 5631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
758+0.094 EUR
1127+0.063 EUR
1348+0.053 EUR
2058+0.035 EUR
2243+0.032 EUR
2370+0.03 EUR
Mindestbestellmenge: 556
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MUR880EG pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E794107D604469&compId=MUR880EG.PDF?ci_sign=ffe8358acb0ce90c0c094f67eb8605752f5004cb
MUR880EG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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